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Weize W. Xiong, Ph.D. - Publications

Affiliations: 
2001 University of California, Davis, Davis, CA 
Area:
Electronics and Electrical Engineering
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Na K-, Park K-, Cristoloveanu S, Chroboczek JA, Ohata A, Xiong W, Lee J-, Bae Y. Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects Microelectronic Engineering. 98: 85-88. DOI: 10.1016/J.Mee.2012.05.027  0.438
2011 Chang SJ, Bawedin M, Xiong W, Jeon SC, Lee JH, Cristoloveanu S. A FinFET memory with remote carrier trapping in ONO buried insulator Microelectronic Engineering. 88: 1203-1206. DOI: 10.1016/J.Mee.2011.03.034  0.421
2010 Song J, Yuan Y, Yu B, Xiong W, Taur Y. Compact Modeling of Experimental n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 57: 1369-1374. DOI: 10.1109/Ted.2010.2047067  0.446
2010 Barrett C, Lederer D, Redmond G, Xiong W, Colinge JP, Quinn AJ. Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Solid-State Electronics. 54: 1273-1277. DOI: 10.1016/J.Sse.2010.05.035  0.632
2010 Lee CW, Afzalian A, Ferain I, Yan R, Akhavan ND, Xiong W, Colinge JP. Influence of gate misalignment on the electrical characteristics of MuGFETS Solid-State Electronics. 54: 226-230. DOI: 10.1016/J.Sse.2009.09.001  0.634
2009 Colinge JP, Lederer D, Afzalian A, Yan R, Lee CW, Akhavan ND, Xiong W. Properties of accumulation-mode multi-gate field-effect transistors Japanese Journal of Applied Physics. 48: 034502. DOI: 10.1143/Jjap.48.034502  0.672
2009 Esqueda IS, Barnaby HJ, McLain ML, Adell PC, Mamouni FE, Dixit SK, Schrimpf RD, Xiong W. Modeling the radiation response of fully-depleted SOI n-channel MOSFETs Ieee Transactions On Nuclear Science. 56: 2247-2250. DOI: 10.1109/Tns.2009.2012709  0.413
2009 Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850  0.357
2009 Song J, Yu B, Xiong W, Taur Y. Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs Ieee Transactions On Electron Devices. 56: 533-536. DOI: 10.1109/Ted.2008.2011840  0.498
2009 Na K-, Cristoloveanu S, Bae Y-, Patruno P, Xiong W, Lee J-. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Solid-State Electronics. 53: 150-153. DOI: 10.1016/J.Sse.2008.10.016  0.523
2009 Lee CW, Afzalian A, Ferain I, Yan R, Dehdashti N, Byun KY, Colinge C, Xiong W, Colinge JP. Comparison of different surface orientation in narrow fin MuGFETs Microelectronic Engineering. 86: 2381-2384. DOI: 10.1016/J.Mee.2009.04.025  0.615
2008 Mamouni FE, Dixit SK, Schrimpf RD, Adell PC, Esqueda IS, McLain ML, Barnaby HJ, Cristoloveanu S, Xiong W. Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices Ieee Transactions On Nuclear Science. 55: 3259-3264. DOI: 10.1109/Tns.2008.2006500  0.545
2008 Lee CW, Afzalian A, Yan R, Akhavan ND, Xiong W, Colinge JP. Drain breakdown voltage in MuGFETs: Influence of physical parameters Ieee Transactions On Electron Devices. 55: 3503-3506. DOI: 10.1109/Ted.2008.2006546  0.59
2008 Nathanael R, Xiong W, Cleavelin CR, Liu TJK. Impact of gate-induced strain on MuGFET reliability Ieee Electron Device Letters. 29: 916-919. DOI: 10.1109/Led.2008.2000944  0.42
2008 Lee CW, Lederer D, Afzalian A, Yan R, Dehdashti N, Xiong W, Colinge JP. Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Solid-State Electronics. 52: 1815-1820. DOI: 10.1016/J.Sse.2008.09.006  0.538
2007 Russ C, Gossner H, Schulz T, Chaudhary N, Xiong W, Marshall A, Duvvury C, Schrufer K, Cleavelin CRR. ESD Evaluation of the Emerging MuGFET Technology Ieee Transactions On Device and Materials Reliability. 7: 152-161. DOI: 10.1109/Tdmr.2006.888288  0.471
2006 Colinge JP, Orozco A, Rudee J, Xiong W, Cleavelin CR, Schulz T, Schrüfer K, Knoblinger G, Patruno P. Radiation dose effects in trigate SOI MOS transistors Ieee Transactions On Nuclear Science. 53: 3237-3241. DOI: 10.1109/Tns.2006.885841  0.574
2006 Colinge JP, Alderman JC, Xiong W, Cleavelin CR. Quantum - Mechanical effects in trigate SOI MOSFETs Ieee Transactions On Electron Devices. 53: 1131-1136. DOI: 10.1109/Ted.2006.871872  0.613
2006 Colinge JP, Xiong W, Cleavelin CR, Schulz T, Schrüfer K, Matthews K, Patruno P. Room-temperature low-dimensional effects in Pi-Gate SOI MOSFETs Ieee Electron Device Letters. 27: 775-777. DOI: 10.1109/Led.2006.881086  0.587
2006 Shin K, Xiong W, Cho CY, Cleavelin CR, Schulz T, Schruefer K, Patruno P, Smith L, Liu TK. Study of bending-induced strain effects on MuGFET performance Ieee Electron Device Letters. 27: 671-673. DOI: 10.1109/Led.2006.878047  0.341
2006 Xiong W, Cleavelin CR, Kohli P, Huffman C, Schulz T, Schruefer K, Gebara G, Mathews K, Patruno P, Vaillant Y-L, Cayrefourcq I, Kennard M, Mazure C, Shin K, Liu T-K. Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility Ieee Electron Device Letters. 27: 612-614. DOI: 10.1109/Led.2006.877714  0.364
2006 Colinge JP, Floyd L, Quinn AJ, Redmond G, Alderman JC, Xiong W, Cleavelin CR, Schulz T, Schruefer K, Knoblinger G, Patruno P. Temperature effects on trigate SOI MOSFETs Ieee Electron Device Letters. 27: 172-174. DOI: 10.1109/Led.2006.869941  0.599
2006 Colinge JP, Quinn AJ, Floyd L, Redmond G, Alderman JC, Xiong W, Cleavelin CR, Schulz T, Schruefer K, Knoblinger G, Patruno P. Low-temperature electron mobility in trigate SOI MOSFETs Ieee Electron Device Letters. 27: 120-122. DOI: 10.1109/Led.2005.862691  0.566
2005 Xiong W, Rinn Cleavelin C, Wise R, Yu S, Pas M, Zaman RJ, Gostkowski M, Matthews K, Maleville C, Patruno P, King TJ, Colinge JP. Full/partial depletion effects in FinFETs Electronics Letters. 41: 504-506. DOI: 10.1049/El:20050281  0.632
2004 Frei J, Johns C, Vazquez A, Xiong W, Cleavelin CR, Schulz T, Chaudhary N, Gebara G, Zaman JR, Gostkowski M, Matthews K, Colinge JP. Body effect in tri- and pi-gate SOI MOSFETs Ieee Electron Device Letters. 25: 813-815. DOI: 10.1109/Led.2004.839223  0.642
2004 Xiong W, Gebara G, Zaman J, Gostkowski M, Nguyen B, Smith G, Lewis D, Cleavelin CR, Wise R, Yu S, Pas M, King TJ, Colinge JP. Improvement of FinFET electrical characteristics by hydrogen annealing Ieee Electron Device Letters. 25: 541-543. DOI: 10.1109/Led.2004.832787  0.566
1999 Xiong W, Colinge JP. Self-aligned implanted ground-plane fully depleted SOI MOSFET Electronics Letters. 35: 2059-2060. DOI: 10.1049/El:19991390  0.59
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