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Guangyu Liu - Publications

Affiliations: 
2008-2013 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kang CH, Liu G, Lee C, Alkhazragi O, Wagstaff JM, Li K, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP, Ooi BS. Semipolar ($20\overline{21}$) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication Applied Physics Express. 13: 14001. DOI: 10.7567/1882-0786/Ab58Eb  0.331
2020 Alkhazragi O, Kang CH, Kong M, Liu G, Lee C, Li K, Zhang H, Wagstaff JM, Alhawaj F, Ng TK, Speck JS, Nakamura S, DenBaars SP, Ooi BS. 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector Ieee Photonics Technology Letters. 1-1. DOI: 10.1109/Lpt.2020.2995110  0.367
2019 Kang CH, Dursun I, Liu G, Sinatra L, Sun X, Kong M, Pan J, Maity P, Ooi EN, Ng TK, Mohammed OF, Bakr OM, Ooi BS. High-speed colour-converting photodetector with all-inorganic CsPbBr perovskite nanocrystals for ultraviolet light communication. Light, Science & Applications. 8: 94. PMID 31645937 DOI: 10.1038/S41377-019-0204-4  0.431
2019 Zhang H, Ebaid M, Tan J, Liu G, Min JW, Ng TK, Ooi BS. Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions. Optics Express. 27: A81-A91. PMID 30876005 DOI: 10.1364/Oe.27.000A81  0.351
2018 Ho KT, Chen R, Liu G, Shen C, Holguin-Lerma J, Al-Saggaf AA, Ng TK, Alouini MS, He JH, Ooi BS. 3.2 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector. Optics Express. 26: 3037-3045. PMID 29401836 DOI: 10.1364/Oe.26.003037  0.371
2018 Bose R, Adhikari A, Burlakov VM, Liu G, Haque MA, Priante D, Hedhili MN, Wehbe N, Zhao C, Yang H, Ng TK, Goriely A, Bakr OM, Wu T, Ooi BS, et al. Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy Acs Energy Letters. 3: 476-481. DOI: 10.1021/Acsenergylett.7B01330  0.301
2017 Ebaid M, Priante D, Liu G, Zhao C, Sharizal Alias M, Buttner U, Khee Ng T, Taylor Isimjan T, Idriss H, Ooi BS. Unbiased photocatalytic hydrogen generation from pure water on stable Ir-treated In 0.33 Ga 0.67 N nanorods Nano Energy. 37: 158-167. DOI: 10.1016/J.Nanoen.2017.05.013  0.339
2013 Sun G, Chen R, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 19: 8400106-8400106. DOI: 10.1109/Jstqe.2012.2218093  0.708
2013 Liu G, Zhang J, Tan CK, Tansu N. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2255028  0.667
2013 Zhu P, Liu G, Zhang J, Tansu N. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays Ieee/Osa Journal of Display Technology. 9: 317-323. DOI: 10.1109/Jdt.2013.2250253  0.76
2013 Zhao H, Liu G, Zhang J, Arif RA, Tansu N. Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes Ieee/Osa Journal of Display Technology. 9: 212-225. DOI: 10.1109/Jdt.2013.2250252  0.788
2013 Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342  0.765
2013 Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541  0.767
2013 Xu G, Sun G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4775605  0.692
2012 Liu G, Zhang J, Zhao H, Tansu N. Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.909633  0.737
2012 Liu G, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao H, Tansu N. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Journal of Crystal Growth. 340: 66-73. DOI: 10.1016/J.Jcrysgro.2011.12.037  0.677
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571 DOI: 10.1364/Oe.19.00A991  0.759
2011 Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342  0.764
2011 Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901  0.798
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875125  0.651
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1109/Photonics.2010.5698996  0.741
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Efficient Terahertz Generation Within InGaN/GaN Multiple Quantum Wells Ieee Journal of Selected Topics in Quantum Electronics. 17: 48-53. DOI: 10.1109/Jstqe.2010.2049343  0.703
2011 Sun G, Xu G, Ding YJ, Zhao H, Liu G, Zhang J, Tansu N. Investigation of fast and slow decays in InGaN/GaN quantum wells Applied Physics Letters. 99: 081104. DOI: 10.1063/1.3627166  0.7
2011 Zhang J, Kutlu S, Liu G, Tansu N. High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 110. DOI: 10.1063/1.3624761  0.546
2011 Zhao H, Zhang J, Liu G, Tansu N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3580628  0.679
2011 Zhang J, Tong H, Liu G, Herbsommer JA, Huang GS, Tansu N. Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents Journal of Applied Physics. 109. DOI: 10.1063/1.3553880  0.651
2010 Zhao H, Liu G, Ee YK, Li XH, Tong H, Zhang J, Huang GS, Tansu N. Novel device concepts for high-efficiency InGaN-based light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842869  0.804
2010 Tong H, Zhang J, Zhao H, Liu G, Handara VA, Herbsommer JA, Tansu N. Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842509  0.481
2010 Liu G, Zhao H, Zhang J, Tong H, Huang GS, Tansu N. Growths of lattice-matched AlInN / GaN for optoelectronics applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 534-535. DOI: 10.1109/Photonics.2010.5698997  0.703
2010 Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 532-533. DOI: 10.1109/PHOTONICS.2010.5698996  0.723
2010 Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887  0.766
2010 Xu G, Ding YJ, Zhao H, Liu G, Jamil M, Tansu N, Zotova IB, Stutz CE, Diggs DE, Fernelius N, Hopkins FK, Gallinat CS, Koblmüller G, Speck JS. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015004  0.697
2010 Zhao H, Liu G, Tansu N. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Applied Physics Letters. 97. DOI: 10.1063/1.3493188  0.712
2010 Tong H, Zhang J, Liu G, Herbsommer JA, Huang GS, Tansu N. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition Applied Physics Letters. 97: 112105. DOI: 10.1063/1.3489086  0.641
2010 Sun G, Ding YJ, Liu G, Huang GS, Zhao H, Tansu N, Khurgin JB. Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells Applied Physics Letters. 97. DOI: 10.1063/1.3462324  0.717
2009 Cui J, Ning Y, Zhang Y, Kong P, Liu G, Zhang X, Wang Z, Li T, Sun Y, Wang L. Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution. Applied Optics. 48: 3317-21. PMID 19543337 DOI: 10.1364/AO.48.003317  0.553
2009 Zhao H, Liu G, Li X, Arif RA, Huang GS, Ee YK, Tansu N. Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile Proceedings of Spie - the International Society For Optical Engineering. 7231. DOI: 10.1117/12.808542  0.806
2009 Zhao H, Liu G, Li XH, Huang GS, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile Applied Physics Letters. 95. DOI: 10.1063/1.3204446  0.788
2009 Zhao HP, Liu GY, Li XH, Arif RA, Huang GS, Poplawsky JD, Tafon Penn S, Dierolf V, Tansu N. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime Iet Optoelectronics. 3: 283-295. DOI: 10.1049/Iet-Opt.2009.0050  0.786
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