Eleftherios Iliopoulos, Ph.D.

2005- Physics University of Crete, Greece 
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
"Eleftherios Iliopoulos"
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Cross-listing: E-Tree


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Theodore D. Moustakas grad student 2002 Boston University (E-Tree)
 (Growth kinetics and investigations of spontaneous formation of superlattices in AlGaN alloys.)
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Kazazis SA, Papadomanolaki E, Iliopoulos E. (2020) Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties Journal of Applied Physics. 127: 225701
Kazazis SA, Papadomanolaki E, Iliopoulos E. (2018) Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions Ieee Journal of Photovoltaics. 8: 118-124
Dimitrakopulos GP, Bazioti C, Papadomanolaki E, et al. (2018) Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN Materials Science and Technology. 34: 1565-1574
Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2018) Optical properties of InGaN thin films in the entire composition range Journal of Applied Physics. 123: 125101
Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2016) Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates Thin Solid Films. 611: 46-51
Eftychis S, Kruse J, Koukoula T, et al. (2016) Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires Journal of Crystal Growth. 442: 8-13
Papadomanolaki E, Bazioti C, Kazazis SA, et al. (2016) Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties Journal of Crystal Growth. 437: 20-25
Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy Journal of Applied Physics. 118
Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures Physica Status Solidi (B) Basic Research. 252: 1155-1162
Gkrana V, Filintoglou K, Arvanitidis J, et al. (2014) Raman and photoluminescence mapping of InxGa1-xN (x ∼0.4) at high pressure: Optical determination of composition and stress Applied Physics Letters. 105
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