Year |
Citation |
Score |
2017 |
Mannebach EM, Nyby C, Ernst F, Zhou Y, Tolsma J, Li Y, Sher MJ, Tung IC, Zhou H, Zhang Q, Seyler K, Clark G, Lin Y, Zhu D, Glownia JM, et al. Dynamic optical tuning of interlayer interactions in the transition metal dichalcogenides. Nano Letters. PMID 29119791 DOI: 10.1021/Acs.Nanolett.7B03955 |
0.331 |
|
2016 |
Hu T, Smith MD, Dohner ER, Sher MJ, Wu X, Trinh MT, Fisher A, Corbett J, Zhu XY, Karunadasa HI, Lindenberg AM. Mechanism for Broadband White-Light Emission from Two-Dimensional (110) Hybrid Perovskites. The Journal of Physical Chemistry Letters. PMID 27246299 DOI: 10.1021/Acs.Jpclett.6B00793 |
0.324 |
|
2016 |
Jaramillo R, Sher MJ, Ofori-Okai BK, Steinmann V, Yang C, Hartman K, Nelson KA, Lindenberg AM, Gordon RG, Buonassisi T. Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material Journal of Applied Physics. 119. DOI: 10.1063/1.4940157 |
0.377 |
|
2015 |
Sher MJ, Mangan NM, Smith MJ, Lin YT, Marbach S, Schneider TM, Gradečak S, Brenner MP, Mazur E. Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism Journal of Applied Physics. 117. DOI: 10.1063/1.4914520 |
0.608 |
|
2014 |
Mannebach EM, Duerloo KA, Pellouchoud LA, Sher MJ, Nah S, Kuo YH, Yu Y, Marshall AF, Cao L, Reed EJ, Lindenberg AM. Ultrafast electronic and structural response of monolayer MoS2 under intense photoexcitation conditions. Acs Nano. 8: 10734-42. PMID 25244589 DOI: 10.1021/Nn5044542 |
0.34 |
|
2014 |
Sher MJ, Simmons CB, Krich JJ, Akey AJ, Winkler MT, Recht D, Buonassisi T, Aziz MJ, Lindenberg AM. Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Applied Physics Letters. 105. DOI: 10.1063/1.4892357 |
0.665 |
|
2014 |
Sher MJ, Mazur E. Intermediate band conduction in femtosecond-laser hyperdoped silicon Applied Physics Letters. 105. DOI: 10.1063/1.4890618 |
0.587 |
|
2014 |
Smith MJ, Sher MJ, Franta B, Lin YT, Mazur E, Gradečak S. Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor Applied Physics a: Materials Science and Processing. 114: 1009-1016. DOI: 10.1007/S00339-013-7673-8 |
0.679 |
|
2013 |
Haberfehlner G, Smith MJ, Idrobo JC, Auvert G, Sher MJ, Winkler MT, Mazur E, Gambacorti N, Grade?ak S, Bleuet P. Selenium segregation in femtosecond-laser hyperdoped silicon revealed by electron tomography. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 19: 716-25. PMID 23570747 DOI: 10.1017/S1431927613000342 |
0.731 |
|
2013 |
Sher MSM, Pintus P, Pasquale FD. Numerical study of high-index-contrast Er:LiNbO3 photonic wire lasers optically pumped at 980 nm Applied Optics. 52: 4438-4445. DOI: 10.1364/AO.52.004438 |
0.378 |
|
2013 |
Sher MJ, Hammond K, Christakis L, Mazur E. The photovoltaic potential of femtosecond-laser textured amorphous silicon Proceedings of Spie - the International Society For Optical Engineering. 8608. DOI: 10.1117/12.2005451 |
0.686 |
|
2013 |
Newman BK, Ertekin E, Sullivan JT, Winkler MT, Marcus MA, Fakra SC, Sher MJ, Mazur E, Grossman JC, Buonassisi T. Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4824279 |
0.693 |
|
2013 |
Smith MJ, Sher MJ, Franta B, Lin YT, Mazur E, Gradečak S. Response to Comment on the origins of pressure-induced phase transitions during the surface texturing of silicon using femtosecond laser irradiation' [J. Appl. Phys. 113, 126102 (2013)] Journal of Applied Physics. 113. DOI: 10.1063/1.4796126 |
0.601 |
|
2013 |
Sher MJ, Lin YT, Winkler MT, Mazur E, Pruner C, Asenbaum A. Mid-infrared absorptance of silicon hyperdoped with chalcogen via fs-laser irradiation Journal of Applied Physics. 113. DOI: 10.1063/1.4790808 |
0.753 |
|
2012 |
Franta B, Sher M, Lin Y, Phillips KC, Mazur E. Femtosecond laser hyperdoping and micro/nanotexturing of silicon for photovoltaics Proceedings of Spie. 8243. DOI: 10.1117/12.908671 |
0.705 |
|
2012 |
Lee BG, Lin YT, Sher MJ, Mazur E, Branz HM. Light trapping for thin silicon solar cells by femtosecond laser texturing Conference Record of the Ieee Photovoltaic Specialists Conference. 1606-1608. DOI: 10.1109/PVSC.2012.6317902 |
0.582 |
|
2012 |
Smith MJ, Sher MJ, Franta B, Lin YT, Mazur E, Gradečak S. The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation Journal of Applied Physics. 112. DOI: 10.1063/1.4759140 |
0.664 |
|
2012 |
Winkler MT, Sher MJ, Lin YT, Smith MJ, Zhang H, Gradečak S, Mazur E. Studying femtosecond-laser hyperdoping by controlling surface morphology Journal of Applied Physics. 111. DOI: 10.1063/1.4709752 |
0.747 |
|
2011 |
Winkler MT, Recht D, Sher MJ, Said AJ, Mazur E, Aziz MJ. Insulator-to-metal transition in sulfur-doped silicon. Physical Review Letters. 106: 178701. PMID 21635068 DOI: 10.1103/Physrevlett.106.178701 |
0.689 |
|
2011 |
Sher MJ, Winkler MT, Mazur E. Pulsed-laser hyperdoping and surface texturing for photovoltaics Mrs Bulletin. 36: 439-455. DOI: 10.1557/Mrs.2011.111 |
0.752 |
|
2011 |
Smith MJ, Lin YT, Sher MJ, Winkler MT, Mazur E, Gradečak S. Pressure-induced phase transformations during femtosecond-laser doping of silicon Journal of Applied Physics. 110. DOI: 10.1063/1.3633528 |
0.739 |
|
2011 |
Newman BK, Sher MJ, Mazur E, Buonassisi T. Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon Applied Physics Letters. 98. DOI: 10.1063/1.3599450 |
0.609 |
|
2011 |
Smith MJ, Winkler M, Sher MJ, Lin YT, Mazur E, Gradečak S. The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon Applied Physics a: Materials Science and Processing. 105: 795-800. DOI: 10.1007/S00339-011-6651-2 |
0.742 |
|
2009 |
Winkler M, Sher MJ, Lin YT, Mazur E. Optical hyperdoping: Using femtosecond lasers to tailor the optoelectronic properties of semiconductors Optics Infobase Conference Papers. |
0.68 |
|
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