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Huaqiang Wu, Ph.D. - Publications

Affiliations: 
2006 Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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70 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 He C, Tang J, Shang DS, Tang J, Xi Y, Wang S, Li N, Zhang Q, Lu J, Wei Z, Wang Q, Shen C, Li J, Shen S, Shen J, ... ... Wu H, et al. Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing. Acs Applied Materials & Interfaces. PMID 32052957 DOI: 10.1021/Acsami.9B21747  0.343
2020 Yao P, Wu H, Gao B, Tang J, Zhang Q, Zhang W, Yang JJ, Qian H. Fully hardware-implemented memristor convolutional neural network. Nature. 577: 641-646. PMID 31996818 DOI: 10.1038/S41586-020-1942-4  0.311
2020 Wang Z, Wu H, Burr GW, Hwang CS, Wang KL, Xia Q, Yang JJ. Resistive switching materials for information processing Nature Reviews Materials. 5: 173-195. DOI: 10.1038/S41578-019-0159-3  0.366
2019 Tang J, Yuan F, Shen X, Wang Z, Rao M, He Y, Sun Y, Li X, Zhang W, Li Y, Gao B, Qian H, Bi G, Song S, Yang JJ, ... Wu H, et al. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges. Advanced Materials (Deerfield Beach, Fla.). e1902761. PMID 31550405 DOI: 10.1002/Adma.201902761  0.302
2019 Guo Y, Wu H, Gao B, Qian H. Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks. Frontiers in Neuroscience. 13: 812. PMID 31447634 DOI: 10.3389/Fnins.2019.00812  0.343
2019 Sun W, Gao B, Chi M, Xia Q, Yang JJ, Qian H, Wu H. Understanding memristive switching via in situ characterization and device modeling. Nature Communications. 10: 3453. PMID 31371705 DOI: 10.1038/S41467-019-11411-6  0.343
2019 Hua Q, Wu H, Gao B, Zhao M, Li Y, Li X, Hou X, Marvin Chang MF, Zhou P, Qian H. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1900024. PMID 31131198 DOI: 10.1002/Advs.201900024  0.341
2019 Wang P, Xu F, Wang B, Gao B, Wu H, Qian H, Yu S. Three-Dimensional nand Flash for Vector–Matrix Multiplication Ieee Transactions On Very Large Scale Integration Systems. 27: 988-991. DOI: 10.1109/Tvlsi.2018.2882194  0.35
2019 Islam R, Li H, Chen P, Wan W, Chen H, Gao B, Wu H, Yu S, Saraswat K, Philip Wong H. Device and materials requirements for neuromorphic computing Journal of Physics D: Applied Physics. 52: 113001. DOI: 10.1088/1361-6463/Aaf784  0.354
2019 Huang Y, Zhao Z, Wang C, Fan H, Yang Y, Bian J, Wu H. Conductive metallic filaments dominate in hybrid perovskite-based memory devices Science China. Materials. 62: 1323-1331. DOI: 10.1007/S40843-019-9433-4  0.39
2019 Zhang W, Gao B, Tang J, Li X, Wu W, Qian H, Wu H. Analog‐Type Resistive Switching Devices for Neuromorphic Computing Physica Status Solidi (Rrl) – Rapid Research Letters. 13: 1900204. DOI: 10.1002/Pssr.201900204  0.314
2019 Lanza M, Wong H‐P, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari‐Köpe B, ... ... Wu H, et al. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials. 5: 1800143. DOI: 10.1002/Aelm.201800143  0.32
2018 Wang XH, Wu H, Gao B, Li X, Deng N, Qian H. Thermal Stability of HfO x -Based Resistive Memory Array: A Temperature Coefficient Study Ieee Electron Device Letters. 39: 192-195. DOI: 10.1109/Led.2017.2787124  0.309
2018 Wu W, Wu H, Gao B, Deng N, Qian H. Suppress variations of analog resistive memory for neuromorphic computing by localizing Vo formation Journal of Applied Physics. 124: 152108. DOI: 10.1063/1.5037896  0.371
2018 Sun Y, Tai M, Song C, Wang Z, Yin J, Li F, Wu H, Zeng F, Lin H, Pan F. Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device The Journal of Physical Chemistry C. 122: 6431-6436. DOI: 10.1021/Acs.Jpcc.7B12817  0.359
2018 Wang B, Gao B, Wu H, Qian H. A drain leakage phenomenon in poly silicon channel 3D NAND flash caused by conductive paths along grain boundaries Microelectronic Engineering. 192: 66-69. DOI: 10.1016/J.Mee.2018.02.009  0.35
2017 Yuan FY, Deng N, Shih CC, Tseng YT, Chang TC, Chang KC, Wang MH, Chen WC, Zheng HX, Wu H, Qian H, Sze SM. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment. Nanoscale Research Letters. 12: 574. PMID 29075921 DOI: 10.1186/S11671-017-2330-3  0.36
2017 Yao P, Wu H, Gao B, Eryilmaz SB, Huang X, Zhang W, Zhang Q, Deng N, Shi L, Wong HP, Qian H. Face classification using electronic synapses. Nature Communications. 8: 15199. PMID 28497781 DOI: 10.1038/Ncomms15199  0.332
2017 Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory. Acs Applied Materials & Interfaces. PMID 28072511 DOI: 10.1021/Acsami.6B14282  0.313
2017 Wu W, Wu H, Gao B, Deng N, Yu S, Qian H. Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer Ieee Electron Device Letters. 38: 1019-1022. DOI: 10.1109/Led.2017.2719161  0.363
2017 Tsai T, Wu C, Chang K, Pan C, Chen P, Lin N, Lin J, Lin Y, Chen W, Wu H, Deng N, Qian H. Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory Ieee Electron Device Letters. 38: 445-448. DOI: 10.1109/Led.2017.2664881  0.38
2017 Li X, Wu H, Gao B, Deng N, Qian H. Short Time High-Resistance State Instability of TaOx-Based RRAM Devices Ieee Electron Device Letters. 38: 32-35. DOI: 10.1109/Led.2016.2630044  0.329
2017 Ye C, Wu J, Pan C, Tsai T, Chang K, Wu H, Deng N, Qian H. Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation Rsc Advances. 7: 11585-11590. DOI: 10.1039/C7Ra01104K  0.357
2017 Wang B, Gao B, Wu H, Qian H. New structure with SiO2-gate-dielectric select gates in vertical-channel three-dimensional (3D) NAND flash memory Microelectronics Reliability. 78: 80-84. DOI: 10.1016/J.Microrel.2017.08.001  0.345
2017 Wang C, Wu H, Gao B, Wu W, Dai L, Li X, Qian H. Ultrafast RESET Analysis of HfO x -Based RRAM by Sub-Nanosecond Pulses Advanced Electronic Materials. 3: 1700263. DOI: 10.1002/Aelm.201700263  0.328
2017 Yoon JH, Zhang J, Ren X, Wang Z, Wu H, Li Z, Barnell M, Wu Q, Lauhon LJ, Xia Q, Yang JJ. Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths Advanced Functional Materials. 27: 1702010. DOI: 10.1002/Adfm.201702010  0.347
2016 Lyu H, Lu Q, Liu J, Wu X, Zhang J, Li J, Niu J, Yu Z, Wu H, Qian H. Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax. Scientific Reports. 6: 35717. PMID 27775009 DOI: 10.1038/Srep35717  0.377
2016 Huang X, Wu H, Bin Gao, Sekar DC, Dai L, Kellam M, Bronner G, Deng N, Qian H. HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention. Nanotechnology. 27: 395201. PMID 27537613 DOI: 10.1088/0957-4484/27/39/395201  0.305
2016 Li X, Wu H, Bin Gao, Wu W, Wu D, Deng N, Cai J, Qian H. Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices. Nanotechnology. 27: 305201. PMID 27302281 DOI: 10.1088/0957-4484/27/30/305201  0.345
2016 Li H, Wu H, Yuan S, Qian H. Synthesis and characterization of vertically standing MoS2 nanosheets. Scientific Reports. 6: 21171. PMID 26888690 DOI: 10.1038/Srep21171  0.349
2016 Wang C, Wu H, Gao B, Dai L, Deng N, Sekar D, Lu Z, Kellam M, Bronner G, Qian H. Suppression of relaxation effect in HfO2 resistive random access memory array by improved program operations Applied Physics Express. 9. DOI: 10.7567/Apex.9.051501  0.302
2016 Pan C, Chang T, Tsai T, Chang K, Chu T, Shih C, Lin C, Chen P, Wu H, Deng N, Qian H, Sze SM. Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode Ieee Transactions On Electron Devices. 63: 4737-4743. DOI: 10.1109/Ted.2016.2615807  0.357
2016 Wang C, Wu H, Gao B, Dai L, Deng N, Sekar DC, Lu Z, Kellam M, Bronner G, Qian H. Relaxation effect in RRAM arrays: Demonstration and characteristics Ieee Electron Device Letters. 37: 182-185. DOI: 10.1109/Led.2015.2508034  0.329
2016 Pan C, Chang T, Tsai T, Chang K, Chen P, Chang-Chien S, Chen M, Huang H, Wu H, Deng N, Qian H, Sze SM. Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence Applied Physics Letters. 109: 183509. DOI: 10.1063/1.4966181  0.375
2016 Song L, Zhang J, Chen A, Wu H, Qian H, Yu Z. An efficient method for evaluating RRAM crossbar array performance Solid-State Electronics. 120: 32-40. DOI: 10.1016/J.Sse.2016.03.004  0.314
2016 Zhao Z, Chen X, Wu H, Wu X, Cao G. Probing the Photovoltage and Photocurrent in Perovskite Solar Cells with Nanoscale Resolution Advanced Functional Materials. 26: 3048-3058. DOI: 10.1002/Adfm.201504451  0.356
2015 Lyu H, Wu H, Liu J, Lu Q, Zhang J, Wu X, Li J, Ma T, Niu J, Ren W, Cheng HM, Yu Z, Qian H. Double-Balanced Graphene Integrated Mixer with Outstanding Linearity. Nano Letters. PMID 26378374 DOI: 10.1021/Acs.Nanolett.5B02503  0.328
2015 Bai Y, Wu H, Wang K, Wu R, Song L, Li T, Wang J, Yu Z, Qian H. Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes. Scientific Reports. 5: 13785. PMID 26348797 DOI: 10.1038/Srep13785  0.311
2015 Qin S, Liu Z, Zhang G, Zhang J, Sun Y, Wu H, Qian H, Yu Z. Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory. Physical Chemistry Chemical Physics : Pccp. 17: 8627-32. PMID 25750983 DOI: 10.1039/C4Cp04903A  0.345
2015 Wu H, Li X, Huang F, Chen A, Yu Z, Qian H. Stable self-compliance resistive switching in AlOδ/Ta2O(5-x)/TaOy triple layer devices. Nanotechnology. 26: 035203. PMID 25549017 DOI: 10.1088/0957-4484/26/3/035203  0.332
2015 Liu R, Wu H, Pang Y, Qian H, Yu S. Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory Arrays Ieee Electron Device Letters. 36: 1380-1383. DOI: 10.1109/Led.2015.2496257  0.364
2015 Wu HQ, Wu MH, Li XY, Bai Y, Deng N, Yu ZP, Qian H. Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices Chinese Physics B. 24: 058501. DOI: 10.1088/1674-1056/24/5/058501  0.348
2014 Bai Y, Wu H, Wu R, Zhang Y, Deng N, Yu Z, Qian H. Study of multi-level characteristics for 3D vertical resistive switching memory. Scientific Reports. 4: 5780. PMID 25047906 DOI: 10.1038/Srep05780  0.349
2014 Lv H, Wu H, Liu J, Huang C, Li J, Yu J, Niu J, Xu Q, Yu Z, Qian H. Inverted process for graphene integrated circuits fabrication. Nanoscale. 6: 5826-30. PMID 24745037 DOI: 10.1039/C3Nr06904D  0.353
2014 Lv H, Wu H, Huang C, Wang Y, Qian H. Graphene nonvolatile memory prototype based on charge-transfer mechanism Applied Physics Express. 7: 45101. DOI: 10.7567/Apex.7.045101  0.329
2014 Zhang G, Zhang J, Liu Z, Wu P, Wu H, Qian H, Wang Y, Zhang Z, Yu Z. Geometry optimization of planar hall devices under voltage biasing Ieee Transactions On Electron Devices. 61: 4216-4223. DOI: 10.1109/Ted.2014.2361686  0.341
2014 Wu H, Li X, Wu M, Huang F, Yu Z, Qian H. Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer Ieee Electron Device Letters. 35: 39-41. DOI: 10.1109/Led.2013.2288311  0.367
2014 Zhang Y, Deng N, Wu H, Yu Z, Zhang J, Qian H. Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device Applied Physics Letters. 105: 63508. DOI: 10.1063/1.4893325  0.331
2013 Xiao K, Wu H, Lv H, Wu X, Qian H. The study of the effects of cooling conditions on high quality graphene growth by the APCVD method. Nanoscale. 5: 5524-9. PMID 23674269 DOI: 10.1039/C3Nr00524K  0.317
2013 Lv H, Wu H, Liu J, Yu J, Niu J, Li J, Xu Q, Wu X, Qian H. High carrier mobility in suspended-channel graphene field effect transistors Applied Physics Letters. 103: 193102. DOI: 10.1063/1.4828835  0.322
2013 Zhang Y, Wu H, Bai Y, Chen A, Yu Z, Zhang J, Qian H. Study of conduction and switching mechanisms in Al/AlOx/WO x/W resistive switching memory for multilevel applications Applied Physics Letters. 102. DOI: 10.1063/1.4810000  0.348
2013 Bai Y, Wu H, Zhang Y, Wu M, Zhang J, Deng N, Qian H, Yu Z. Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism Applied Physics Letters. 102. DOI: 10.1063/1.4803462  0.376
2010 Peng T, Shen K, Wu H, Hu C, Liu C. Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures Journal of Physics D. 43: 315101. DOI: 10.1088/0022-3727/43/31/315101  0.317
2007 Koley G, Lakshmanan L, Wu H, Cha HY. Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics Physica Status Solidi (a) Applications and Materials Science. 204: 1123-1129. DOI: 10.1002/Pssa.200622516  0.672
2006 Yesinowski JP, Purdy AP, Wu H, Spencer MG, Hunting J, DiSalvo FJ. Distributions of conduction electrons as manifested in MAS NMR of gallium nitride. Journal of the American Chemical Society. 128: 4952-3. PMID 16608319 DOI: 10.1021/Ja0604865  0.502
2006 Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018  0.749
2006 Poitras CB, Wu H, Turner AC, Spencer MG, Lipson M. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder Applied Physics Letters. 89. DOI: 10.1063/1.2338894  0.514
2006 Cha H, Wu H, Chae S, Spencer MG. Gallium nitride nanowire nonvolatile memory device Journal of Applied Physics. 100: 024307. DOI: 10.1063/1.2216488  0.689
2006 Wu H, Poitras CB, Lipson M, Spencer MG, Hunting J, DiSalvo FJ. Photoluminescence and cathodoluminescence analyses of GaN powder doped with Eu Applied Physics Letters. 88: 011921. DOI: 10.1063/1.2162667  0.542
2006 Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/S11664-006-0118-9  0.732
2005 Wu H, Bourlinos A, Giannelis EP, Spencer MG. High quality, low cost continuous poly-GaN film on Si and glass substrates produced by spin coating Materials Research Society Symposium Proceedings. 831: 393-398. DOI: 10.1557/Proc-831-E8.2  0.48
2005 Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-07  0.518
2005 Wu H, Spinelli J, Konkapaka P, Spencer M. Rapid growth of bulk GaN crystal using GaN powder as source material Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-01  0.502
2005 Wu H, Poitras CB, Lipson M, Spencer MG, Hunting J, DiSalvo FJ. Green emission from Er-doped GaN powder Applied Physics Letters. 86: 191918. DOI: 10.1063/1.1923175  0.494
2005 Wu H, Hunting J, Uheda K, Lepak L, Konkapaka P, DiSalvo FJ, Spencer MG. Rapid synthesis of gallium nitride powder Journal of Crystal Growth. 279: 303-310. DOI: 10.1016/J.Jcrysgro.2005.02.040  0.535
2005 Wu H, Hunting J, DiSalvo FJ, Spencer MG. Rapid synthesis of high purity GaN powder Physica Status Solidi (C). 2: 2074-2078. DOI: 10.1002/Pssc.200461570  0.541
2005 Wu H, Konkapaka P, Makarov Y, Spencer MG. Bulk GaN growth by Gallium Vapor Transport technique Physica Status Solidi C: Conferences. 2: 2032-2035. DOI: 10.1002/Pssc.200461553  0.539
2004 Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E8.23  0.498
2004 Konkapaka P, Wu H, Makarov Y, Spencer MG. Growth and Characterization of bulk GaN by Ga Vapor Transport Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.33  0.551
2004 Wu H, Konkapaka P, Makarov Y, Spencer MG. Thick GaN layer grown by Ga vapor transport technique International Journal of High Speed Electronics and Systems. 14: 745-749. DOI: 10.1142/S0129156404002776  0.349
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