Michael G Spencer - Publications

Affiliations: 
1985 ECE Cornell University, Ithaca, NY, United States 

127 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. Acs Nano. PMID 29099576 DOI: 10.1021/acsnano.7b04841  0.92
2016 Jungwirth NR, Calderon B, Ji Y, Spencer MG, Flatte ME, Fuchs GD. Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride. Nano Letters. PMID 27580074 DOI: 10.1021/acs.nanolett.6b01987  1
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51. PMID 27398439  1
2016 Rakhilin N, Barth B, Choi J, Muñoz NL, Kulkarni S, Jones JS, Small DM, Cheng YT, Cao Y, LaVinka C, Kan E, Dong X, Spencer M, Pasricha P, Nishimura N, et al. Simultaneous optical and electrical in vivo analysis of the enteric nervous system. Nature Communications. 7: 11800. PMID 27270085 DOI: 10.1038/ncomms11800  1
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface functionalized graphene biosensor on sapphire for cancer cell detection Journal of Nanoscience and Nanotechnology. 16: 144-151. DOI: 10.1166/jnn.2016.12042  1
2016 Kwak JY, Hwang J, Calderon B, Alsalman H, Spencer MG. Long wavelength optical response of graphene-MoS2 heterojunction Applied Physics Letters. 108. DOI: 10.1063/1.4943169  1
2016 Thomas C, Portnoff S, Spencer MG. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes Applied Physics Letters. 108. DOI: 10.1063/1.4939203  1
2015 Kwak JY, Hwang J, Calderon B, Alsalman H, Schutter B, Spencer MG. Photothermal electric effect of multilayer MoS2-graphene heterojunction Device Research Conference - Conference Digest, Drc. 2015: 121-122. DOI: 10.1109/DRC.2015.7175585  1
2015 Hochella MF, Spencer MG, Jones KL. Nanotechnology: Nature's gift or scientists' brainchild? Environmental Science: Nano. 2: 114-119. DOI: 10.1039/c4en00145a  1
2014 Kwak JY, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer MG. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts. Nano Letters. 14: 4511-6. PMID 24978093 DOI: 10.1021/nl5015316  0.92
2014 Hwang J, Kim M, Cha HY, Spencer MG, Lee JW. Metal free growth of graphene on quartz substrate using chemical vapor deposition (CVD). Journal of Nanoscience and Nanotechnology. 14: 2979-83. PMID 24734720  1
2014 Gorantla S, Bachmatiuk A, Hwang J, Alsalman HA, Kwak JY, Seyller T, Eckert J, Spencer MG, Rümmeli MH. A universal transfer route for graphene. Nanoscale. 6: 889-96. PMID 24270801 DOI: 10.1039/c3nr04739c  0.92
2013 Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, ... ... Spencer MG, et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. Acs Nano. 7: 2898-926. PMID 23464873 DOI: 10.1021/nn400280c  1
2013 Hwang J, Kim M, Campbell D, Alsalman HA, Kwak JY, Shivaraman S, Woll AR, Singh AK, Hennig RG, Gorantla S, Rümmeli MH, Spencer MG. van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. Acs Nano. 7: 385-95. PMID 23244231 DOI: 10.1021/nn305486x  1
2013 Singh AK, Uddin MA, Tolson JT, Maire-Afeli H, Sbrockey N, Tompa GS, Spencer MG, Vogt T, Sudarshan TS, Koley G. Electrically tunable molecular doping of graphene Applied Physics Letters. 102. DOI: 10.1063/1.4789509  1
2013 Ardaravi?ius L, Liberis J, Šermukšnis E, Matulionis A, Hwang J, Kwak JY, Campbell D, Alsalman HA, Eastman LF, Spencer MG. High frequency noise of epitaxial graphene grown on sapphire Physica Status Solidi - Rapid Research Letters. 7: 348-351. DOI: 10.1002/pssr.201307074  1
2012 Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S. Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Nanotechnology. 23: 335202. PMID 22842470 DOI: 10.1088/0957-4484/23/33/335202  0.92
2012 Kim M, Hwang J, Shields VB, Tiwari S, Spencer MG, Lee JW. SiC surface orientation and Si loss rate effects on epitaxial graphene. Nanoscale Research Letters. 7: 186. PMID 22410299 DOI: 10.1186/1556-276X-7-186  0.92
2012 Gallo EM, Willner BI, Hwang J, Sun S, Spencer M, Salgaj T, Mitchel WC, Sbrockey N, Tompa GS. Chemical vapor deposition of graphene on copper at reduced temperatures Proceedings of Spie - the International Society For Optical Engineering. 8462. DOI: 10.1117/12.929094  1
2012 Liu TJK, Hutin L, Chen IR, Nathanael R, Chen Y, Spencer M, Alon E. Recent progress and challenges for relay logic switch technology Digest of Technical Papers - Symposium On Vlsi Technology. 43-44. DOI: 10.1109/VLSIT.2012.6242452  0.6
2012 Spencer M, Singh A, Uddin MA, Nomani MWK, Tompa G, Sbrockey N, Tolson J, Shields V, Hwang J, Koley G. Graphene on different substrates for sensing applications Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322236  1
2012 Jeon J, Hutin L, Jevtić R, Liu N, Chen Y, Nathanael R, Kwon W, Spencer M, Alon E, Nikolić B, Liu TJK. Multiple-input relay design for more compact implementation of digital logic circuits Ieee Electron Device Letters. 33: 281-283. DOI: 10.1109/LED.2011.2177436  0.6
2012 Shivaraman S, Herman LH, Rana F, Park J, Spencer MG. Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide Applied Physics Letters. 100. DOI: 10.1063/1.4711769  1
2012 Nomani MWK, Shields V, Tompa G, Sbrockey N, Spencer MG, Webb RA, Koley G. Correlated conductivity and work function changes in epitaxial graphene Applied Physics Letters. 100. DOI: 10.1063/1.3691628  1
2011 Strait JH, Wang H, Shivaraman S, Shields V, Spencer M, Rana F. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy. Nano Letters. 11: 4902-6. PMID 21973122 DOI: 10.1021/nl202800h  1
2011 Colson JW, Woll AR, Mukherjee A, Levendorf MP, Spitler EL, Shields VB, Spencer MG, Park J, Dichtel WR. Oriented 2D covalent organic framework thin films on single-layer graphene. Science (New York, N.Y.). 332: 228-31. PMID 21474758 DOI: 10.1126/science.1202747  1
2011 Nomani MWK, Singh A, Shields V, Spencer M, Tompa G, Sbrockey N, Koley G. Work function and conductivity changes due to molecular adsorption in epitaxial graphene on 6H-SiC Proceedings of the Ieee Conference On Nanotechnology. 1317-1321. DOI: 10.1109/NANO.2011.6144426  1
2011 Thomas T, Guo X, Shi J, Lepak LA, Chandrashekhar MVS, Li K, Disalvo FJ, Spencer MG. Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Journal of Crystal Growth. 316: 90-96. DOI: 10.1016/j.jcrysgro.2010.12.059  1
2011 Strait J, Wang H, Shivaraman S, Shields V, Spencer M, Rana F. Very slow carrier cooling in graphene measured by optical/THz pump-probe spectroscopy Optics Infobase Conference Papers 1
2010 Hwang J, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim M, Woll AR, Tompa GS, Spencer MG. Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD). Journal of Crystal Growth. 312: 3219-3224. PMID 20976026 DOI: 10.1016/j.jcrysgro.2010.07.046  1
2010 Jiang X, Spencer MG. Electrochemical impedance biosensor with electrode pixels for precise counting of CD4+ cells: a microchip for quantitative diagnosis of HIV infection status of AIDS patients. Biosensors & Bioelectronics. 25: 1622-8. PMID 20047827 DOI: 10.1016/j.bios.2009.11.024  1
2010 Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/APEX.3.075101  1
2010 Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615  1
2010 Nomani MWK, Shishir R, Qazi M, Diwan D, Shields VB, Spencer MG, Tompa GS, Sbrockey NM, Koley G. Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC Sensors and Actuators, B: Chemical. 150: 301-307. DOI: 10.1016/j.snb.2010.06.069  1
2010 Wang H, Strait JH, Shivaraman S, Besant JD, Shield VB, Spencer MG, Rana F. Ultrafast measurements of thermal transport in graphene Optics Infobase Conference Papers 1
2009 Shivaraman S, Barton RA, Yu X, Alden J, Herman L, Chandrashekhar M, Park J, McEuen PL, Parpia JM, Craighead HG, Spencer MG. Free-standing epitaxial graphene. Nano Letters. 9: 3100-5. PMID 19663456 DOI: 10.1021/nl900479g  1
2009 Rana F, George PA, Strait JH, Dawlaty J, Shivaraman S, Chandrashekhar M, Spencer MG. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.115447  1
2009 Strait JH, George PA, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Emission of terahertz radiation from SiC Applied Physics Letters. 95. DOI: 10.1063/1.3194152  1
2009 Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398  1
2009 Lu J, Chandrashekhar MVS, Parks JJ, Ralph DC, Spencer MG. Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure Applied Physics Letters. 94. DOI: 10.1063/1.3126447  1
2009 Thomas T, Guo X, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li K, DiSalvo FJ, Lipson M, Spencer MG. Purification and mechanical nanosizing of Eu-doped GaN Journal of Crystal Growth. 311: 4402-4407. DOI: 10.1016/j.jcrysgro.2009.07.028  1
2009 Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/s11664-009-0803-6  1
2009 Thomas T, Chandrashekhar MVS, Poitras CB, Shi J, Reiherzer JC, DiSalvo FJ, Lipson M, Spencer MG. Photoluminescence enhancement in Eu doped GaN powder by oxidative passivation of the surface Materials Research Society Symposium Proceedings. 1111: 91-96.  1
2008 George PA, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. Nano Letters. 8: 4248-51. PMID 19367881 DOI: 10.1021/nl8019399  1
2008 Dawlaty JM, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer MG, Veksler D, Chen Y. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Applied Physics Letters. 93. DOI: 10.1063/1.2990753  1
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of ultrafast carrier dynamics in epitaxial graphene Applied Physics Letters. 92. DOI: 10.1063/1.2837539  1
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG. Effect of growth temperature on Eu incorporation in GaN powders Journal of Crystal Growth. 310: 452-456. DOI: 10.1016/j.jcrysgro.2007.10.020  1
2008 Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6  1
2008 Shi J, Choi YC, Pophristic M, Spencer MG, Eastman LF. High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2013-2015. DOI: 10.1002/pssc.200778691  1
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff W, Lu J, Disalvo F, Spencer M. High intensity red emission from Eu doped GaN powders Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1495-1498. DOI: 10.1002/pssc.200778413  1
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Spencer MG, Rana F. Measurement of ultrafast carrier dynamics in epitaxial graphene Materials Research Society Symposium Proceedings. 1081: 138-143.  1
2007 Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF. C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1836-1841. DOI: 10.1116/1.2794058  1
2007 Choi YC, Pophristic M, Peres B, Cha HY, Spencer MG, Eastman LF. High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance Semiconductor Science and Technology. 22: 517-521. DOI: 10.1088/0268-1242/22/5/010  1
2007 Mohamed H, Russo AP, Szarowski DH, McDonnell E, Lepak LA, Spencer MG, Martin DL, Caggana M, Turner JN. Separation characteristics of on-chip biopolymer membranes Separation Science and Technology. 42: 25-41. DOI: 10.1080/01496390601057973  1
2007 Chandrashekhar MVS, Duggirala R, Spencer MG, Lal A. 4H SiC betavoltaic powered temperature transducer Applied Physics Letters. 91. DOI: 10.1063/1.2767780  1
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650  1
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738  1
2007 Dyson A, Ridley BK, Aslan B, Cha HY, Chen X, Schaff WJ, Spencer MG, Eastman LF. GaN ballistic negative-differential-conductivity diode for potential THz applications Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 528-530. DOI: 10.1002/pssc.200673213  1
2006 Yesinowski JP, Purdy AP, Wu H, Spencer MG, Hunting J, DiSalvo FJ. Distributions of conduction electrons as manifested in MAS NMR of gallium nitride. Journal of the American Chemical Society. 128: 4952-3. PMID 16608319 DOI: 10.1021/ja0604865  1
2006 Mohamed H, Russo AP, Szarowski DH, McDonnell E, Lepak LA, Spencer MG, Martin DL, Caggana M, Turner JN. Development and characterization of on-chip biopolymer membranes. Journal of Chromatography. A. 1111: 214-9. PMID 16569580 DOI: 10.1016/j.chroma.2005.08.005  1
2006 Eastman LF, Schaff WJ, Cha HY, Chen XD, Spencer MG, Ridley BK. Ballistic electron acceleration negative-differential-conductivity devices International Journal of High Speed Electronics and Systems. 16: 437-441. DOI: 10.1142/S012915640600376X  1
2006 Choi YC, Pophristic M, Peres B, Spencer MG, Eastman LF. Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2601-2605. DOI: 10.1116/1.2366542  1
2006 Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018  1
2006 Poitras CB, Wu H, Turner AC, Spencer MG, Lipson M. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder Applied Physics Letters. 89. DOI: 10.1063/1.2338894  1
2006 Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799  1
2006 Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166699  1
2006 Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang D, Herro Z, Schlesser R, Sitar Z, Wang B, Callahan M, Rakes K, Konkapaka P, Spencer M. Characterization of bulk grown GaN and AlN single crystal materials Journal of Crystal Growth. 287: 349-353. DOI: 10.1016/j.jcrysgro.2005.11.042  1
2006 Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG. Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Journal of Crystal Growth. 289: 140-144. DOI: 10.1016/j.jcrysgro.2005.11.005  1
2006 Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/s11664-006-0118-9  1
2006 Cha HOY, Chen X, Wu H, Schaff WJ, Spencer MG, Eastman LF. Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410. DOI: 10.1007/BF02690526  1
2006 Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Materials Research Society Symposium Proceedings. 892: 781-786.  1
2005 Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/JJAP.44.L1348  1
2005 Choi YC, Cha HY, Eastman LF, Spencer MG. Design optimization of 600 V SiC SITs for high power and high frequency operation Semiconductor Science and Technology. 20: 193-201. DOI: 10.1088/0268-1242/20/2/017  1
2005 Vitusevich SA, Petrychuk MV, Kurakin AM, Danylyuk SV, Belyaev AE, Cha HY, Spencer MG, Eastman LF, Klein N. Influence of small doses of gamma irradiation on transport and noise properties of SiC MESFETs Aip Conference Proceedings. 780: 713-716. DOI: 10.1063/1.2036850  1
2005 Ardaravi?ius L, Matulionis A, Kiprijanovic O, Liberis J, Cha HY, Eastman LF, Spencer MG. Hot-electron transport in 4H-SiC Applied Physics Letters. 86: 022107-1-022107-3. DOI: 10.1063/1.1851001  1
2005 Koley G, Spencer MG. On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface Applied Physics Letters. 86. DOI: 10.1063/1.1850600  1
2005 Wu H, Konkapaka P, Makarov Y, Spencer MG. Bulk GaN growth by Gallium Vapor Transport technique Physica Status Solidi C: Conferences. 2: 2032-2035. DOI: 10.1002/pssc.200461553  1
2005 Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the anunonothermal technique on HYPE GaN seeds and by the sublimation technique on sapphire seeds Materials Research Society Symposium Proceedings. 831: 441-446.  1
2004 Russo AP, Retterer ST, Spence AJ, Isaacson MS, Lepak LA, Spencer MG, Martin DL, MacColl R, Turner JN. Direct casting of polymer membranes into microfluidic devices Separation Science and Technology. 39: 2515-2530. DOI: 10.1081/SS-200026706  1
2004 Matulionis A, Liberia J, Matulioniene I, Cha HY, Eastman LF, Spencer MG. Hot-phonon temperature and lifetime in biased 4H-SiC Journal of Applied Physics. 96: 6439-6444. DOI: 10.1063/1.1812598  1
2004 Koley G, Cha HY, Hwang J, Schaff WJ, Eastman LF, Spencer MG. Perturbation of charges in AIGaN/GaN heterostructures by ultraviolet laser illumination Journal of Applied Physics. 96: 4253-4262. DOI: 10.1063/1.1794892  1
2004 Cha HY, Choi YC, Eastman LF, Spencer MG. Analytical cascode model of buried-gate SiC MESFETs Electronics Letters. 40: 271-273. DOI: 10.1049/el:20040169  1
2004 Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG. Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs Solid-State Electronics. 48: 1233-1237. DOI: 10.1016/j.sse.2004.01.005  1
2004 Kubovic M, Kasu M, Kallfass I, Neuburger M, Aleksov A, Koley G, Spencer MG, Kohn E. Microwave performance evaluation of diamond surface channel FETs Diamond and Related Materials. 13: 802-807. DOI: 10.1016/j.diamond.2003.11.089  1
2003 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Passivation effect on channel recessed 4H-SiC MESFETs Materials Science Forum. 433: 749-752. DOI: 10.4028/www.scientific.net/MSF.433-436.749  1
2003 Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs Ieee Transactions On Electron Devices. 50: 1569-1574. DOI: 10.1109/TED.2003.814982  1
2003 Koley G, Tilak V, Eastman LF, Spencer MG. Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination Ieee Transactions On Electron Devices. 50: 886-893. DOI: 10.1109/TED.2003.812489  1
2003 Neuburger M, Daumiller I, Zimmermann T, Kunze M, Koley G, Spencer MG, Dadgar A, Krtschil A, Krost A, Kohn E. Surface stability of InGaN-channel based HFETs Electronics Letters. 39: 1614-1616. DOI: 10.1049/el:20030974  1
2003 Koley G, Kim H, Eastman LF, Spencer MG. Electrical bias stress related degradation of AlGaN/GaN HEMTs Electronics Letters. 39: 1217-1218. DOI: 10.1049/el:20030773  1
2003 Eshun EE, Spencer MG, Griffin J, Zhou P, Harris GL. Study of SiC polytype heterojunctions Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 98: 65-69. DOI: 10.1016/S0921-5107(02)00570-6  1
2002 Spencer MG, Agrawal BN, Romano M, Brunson RL, Dillow JD, Nelson DH, Connors JJ, Restaino SR. Acquisition, tracking, pointing, and line-of-sight control laboratory experiments for a space-based bifocal relay mirror Proceedings of Spie - the International Society For Optical Engineering. 4714: 54-64. DOI: 10.1117/12.472600  1
2002 Mainzer AK, McLean IS, Aliado T, Becklin EE, Brims G, Goulter J, Kress E, Magnone N, Milburn J, Skulason G, Spencer M. Characterization of FLITECAM: The first light camera for SOFIA Proceedings of Spie - the International Society For Optical Engineering. 4857: 21-28. DOI: 10.1117/12.458635  1
2002 Koley G, Cha HY, Thomas CI, Spencer MG. Laser-induced surface potential transients observed in III-nitride heterostructures Applied Physics Letters. 81: 2282-2284. DOI: 10.1063/1.1506416  1
2002 Sarney WL, Wood MC, Salamanca-Riba L, Zhou P, Spencer M. Role of Ge on film quality of SiC grown on Si Journal of Applied Physics. 91: 668-671. DOI: 10.1063/1.1425433  1
2002 Koley G, Cha HY, Tilak V, Eastman LF, Spencer MG. Modulation of surface barrier in AlGaN/GaN heterostructures Physica Status Solidi (B) Basic Research. 234: 734-737. DOI: 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C  1
2002 Koley G, Tilak V, Cha HY, Eastman LF, Spencer MG. Surface trapping effects observed in AlGAN/GaN HFETs and heterostructures Proceedings Ieee Lester Eastman Conference On High Performance Devices. 470-476.  1
2001 Koley G, Spencer MG, Bhangale HR. Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy Applied Physics Letters. 79: 545-547. DOI: 10.1063/1.1384004  1
2001 Koley G, Spencer MG. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy Journal of Applied Physics. 90: 337-344. DOI: 10.1063/1.1371941  1
2001 Koley G, Spencer MG. Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 2873-2875. DOI: 10.1063/1.1369390  1
2001 Koley G, Spencer MG. Characterization of GaN and Al0.35Ga0.65N/GaN heterostructures by scanning kelvin probe microscopy Materials Research Society Symposium Proceedings. 680: 90-95.  1
2000 Sarney WL, Salamanca-Riba L, Zhou P, Taylor C, Spencer MG, Vispute RD, Jones KA. The effect of ge on the structureandmorphology of SiC films grown on (111) si substrates Materials Science Forum. 338: 277-280. DOI: 10.4028/www.scientific.net/MSF.338-342.277  1
2000 Sarney WL, Salamanca-Riba L, Hossain T, Zhou P, Jayatirtha HN, Kang HH, Vispute RD, Spencer M, Jones KA. TEM study of bulk AlN growth by physical vapor transport Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/s1092578300004543  1
2000 Goldys EM, Godlewski M, Kaminski E, Piotrowska A, Koley G, Spencer MG, Eastman LF. Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2000: 539-542. DOI: 10.1109/COMMAD.2000.1023006  1
2000 Sarney WL, Salamanca-Riba L, Vispute RD, Zhou P, Taylor C, Spencer MG, Jones KA. SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor Journal of Electronic Materials. 29: 359-363.  1
2000 Koley G, Smart J, Shealy JR, Spencer MG. Characterization of dislocations and suface potential in III-V nitride heterostructures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 200-206.  1
1999 Sarney WL, Salamanca-Riba L, Zhou P, Spencer MG, Taylor C, Sharma RP, Jones KA. Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD Materials Research Society Symposium - Proceedings. 572: 185-190.  1
1998 Vispute RD, Talyansky V, Choopun S, Sharma RP, Venkatesan T, He M, Tang X, Halpern JB, Spencer MG, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices Applied Physics Letters. 73: 348-350. DOI: 10.1063/1.121830  1
1998 Tang X, Hossain F, Wongchotigul K, Spencer MG. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition Applied Physics Letters. 72: 1501-1503. DOI: 10.1063/1.121039  1
1997 Li YX, Salamanca-Riba L, Talyansky V, Venkatesan T, Wongchigul C, Zhou P, Tang X, Spencer MG. Comparison of the microstructure of AlN films grown by mocvd and by PLD on sapphire substrates Materials Research Society Symposium - Proceedings. 449: 453-458.  1
1997 Li YX, Salamanca-Riba L, Wongchotigul K, Zhou P, Spencer MG, Jones VK. Growth mechanism and structure of AlN films grown on sapphire by MOCVD Materials Research Society Symposium - Proceedings. 482: 137-142.  1
1997 Li YX, Salamanca-Riba L, Spencer MG, Wongchigul K, Zhou P, Tang X, Talyansky V, Venkatesan T. Structural characteristics of MOCVD-grown AlN films with different carbon concentration Materials Research Society Symposium - Proceedings. 449: 555-560.  1
1995 Moki A, Shenoy P, Alok D, Baliga BJ, Wongchotigul K, Spencer MG. Low resistivity as-deposited ohmic contacts to 3C-SiC Journal of Electronic Materials. 24: 315-318. DOI: 10.1007/BF02659693  1
1994 Beesabathina DP, Fekade K, Wongchotigul K, Spencer MG, Salamanca-Riba L. Structural study of SiC/AlN bilayers and trilayers on Si and 6H-SiC Materials Research Society Symposium - Proceedings. 339: 363-368.  1
1992 Harris GL, Spencer MG, Jones A, Catchings RM. SiC and TaC as optical materials Materials Science and Engineering B. 11: 89-91. DOI: 10.1016/0921-5107(92)90197-H  1
1991 Harris GL, Jones EW, Spencer MG, Jackson KH. Second harmonic conversion in cubic silicon carbide at 1.06 μm Applied Physics Letters. 59: 1817-1819. DOI: 10.1063/1.106208  1
1991 Scott CJ, Tang X, Spencer MG. Enhanced photoemission from a bi-metallic LaB6/Au photocathode structure Applied Physics Letters. 58: 1795-1796. DOI: 10.1063/1.105094  1
1990 Tadayon B, Tadayon S, Spencer MG, Harris GL, Griffin J, Eastman LF. Increase of electrical activation and mobility of Si-doped GaAs, grown at low substrate temperatures, by the migration-enhanced epitaxy method Journal of Applied Physics. 67: 589-591. DOI: 10.1063/1.345202  1
1989 Magno R, Shelby R, Kennedy TA, Spencer MG. Metastable defects in Be-doped AlxGa1-xAs Journal of Applied Physics. 65: 4828-4831. DOI: 10.1063/1.343216  1
1989 Tadayon B, Tadayon S, Schaff WJ, Spencer MG, Harris GL, Tasker PJ, Wood CEC, Eastman LF. Reduction of Be diffusion in GaAs by migration-enhanced epitaxy Applied Physics Letters. 55: 59-61. DOI: 10.1063/1.101753  1
1989 Wongchotigul K, Harris GL, Spencer MG, Jackson KH, Gomez A, Jones A. Ion-beam milling of cubic silicon carbide (3C-SiC) Materials Letters. 8: 153-155. DOI: 10.1016/0167-577X(89)90181-X  1
1988 Tadayon B, Tadayon S, Spencer MG, Harris GL, Rathbun L, Bradshaw JT, Schaff WJ, Tasker PJ, Eastman LF. Growth of GaAs-Al-GaAs by migration-enhanced epitaxy Applied Physics Letters. 53: 2664-2665. DOI: 10.1063/1.100188  1
1987 Zhou P, Spencer MG, Harris GL, Fekade K. Observation of deep levels in cubic silicon carbide Applied Physics Letters. 50: 1384-1385. DOI: 10.1063/1.97864  1
1986 Spencer M. Problems of Africa Nature. 322: 10. DOI: 10.1038/322010b0  0.6
1986 Harris GL, Jackson KH, Felton GJ, Osborne KR, Fekade K, Spencer MG. Low-pressure growth of single-crystal silicon carbide Materials Letters. 4: 77-80. DOI: 10.1016/0167-577X(86)90053-4  1
1979 Spencer M, Stall R, Eastman LF, Wood CEC. Characterization of grain boundaries using deep level transient spectroscopy Journal of Applied Physics. 50: 8006-8009. DOI: 10.1063/1.325985  1
1976 Spencer M. Medical manpower and the hospital service British Medical Journal. 2: 113. DOI: 10.1136/bmj.2.6027.113  0.6
1968 Spencer M. Théophile Gautier, music critic Music and Letters. 49: 4-17. DOI: 10.1093/ml/XLIX.1.4  0.6
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