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MVS Chandrashekhar - Publications

Affiliations: 
Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Optics Physics
Website:
https://sc.edu/study/colleges_schools/engineering_and_computing/faculty-staff/chandrshekharmvs.php
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Straker M, Chauhan A, Sinha M, Phelan WA, Chandrashekhar M, Hemker KJ, Marvel C, Spencer M. Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method Journal of Crystal Growth. 543: 125700. DOI: 10.1016/J.Jcrysgro.2020.125700  0.456
2019 Jewel MU, Alam MD, Mollah S, Hussain K, Wheeler V, Eddy C, Gaevski M, Simin G, Chandrashekhar M, Khan A. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence Applied Physics Letters. 115: 213502. DOI: 10.1063/1.5125776  0.324
2017 Muhtadi S, Hwang SM, Coleman A, Asif F, Simin G, Chandrashekhar M, Khan A. High Electron Mobility Transistors With Al 0.65 Ga 0.35 N Channel Layers on Thick AlN/Sapphire Templates Ieee Electron Device Letters. 38: 914-917. DOI: 10.1109/Led.2017.2701651  0.363
2017 Barker BG, Chava VSN, Daniels KM, Chandrashekhar MVS, Greytak AB. Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy 2d Materials. 5: 011003. DOI: 10.1088/2053-1583/aa90b1  0.68
2017 Jahangir I, Koley G, Chandrashekhar MVS. Back gated FETs fabricated by large-area, transfer-free growth of a few layer MoS2 with high electron mobility Applied Physics Letters. 110: 182108. DOI: 10.1063/1.4982595  0.599
2016 Uddin MA, Singh A, Daniels K, Vogt T, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors Japanese Journal of Applied Physics. 55: 110312. DOI: 10.7567/Jjap.55.110312  0.745
2016 Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar M. Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Journal of the Electrochemical Society. 163: E130-E134. DOI: 10.1149/2.0791605Jes  0.812
2016 Chava VSN, Omar SU, Brown G, Shetu SS, Andrews J, Sudarshan TS, Chandrashekhar MVS. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Applied Physics Letters. 108. DOI: 10.1063/1.4940385  0.817
2016 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) Journal of Electronic Materials. 45: 2019-2024. DOI: 10.1007/S11664-015-4234-2  0.69
2015 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.030304  0.683
2015 Balachandran A, Song HZ, Sudarshan TS, Shetu SS, Chandrashekhar MVS. Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace Materials Science Forum. 821: 137-140. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.137  0.781
2015 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Mechanism of electrochemical hydrogenation of epitaxial graphene Journal of the Electrochemical Society. 162: E37-E42. DOI: 10.1149/2.0191504Jes  0.814
2015 Uddin MA, Singh AK, Daniels KM, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor 2015 Transducers - 2015 18th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers 2015. 1381-1384. DOI: 10.1109/TRANSDUCERS.2015.7181190  0.727
2014 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001) Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.610  0.824
2014 Brown G, Omar SU, Shetu S, Uddin A, Rana T, Song H, Sudarshan TS, Koley G, Chandrashekhar MVS. High gain bipolar photo-transistor operation in graphene/SiC schottky interfaces: The role of minority carriers 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 444-447. DOI: 10.1109/NANO.2014.6968181  0.701
2014 Uddin MA, Singh AK, Sudarshan TS, Chandrashekhar MVS, Koley G. Tunable graphene/Si chemi-diode H2 sensor: Comparison between Pd and Pt functionalization, and effect of illumination 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 554-557. DOI: 10.1109/NANO.2014.6968132  0.626
2014 Brown GJ, Sabih OU, Shetu SS, Sudarashan TS, Chandrashekhar MVS. Gain of 56 in graphene silicon carbide schottky collector phototransistor (GSCBT) for radiation detection 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 314-317. DOI: 10.1109/NANO.2014.6968128  0.825
2013 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Electrochemical hydrogenation of dimensional carbon Ecs Transactions. 58: 439-445. DOI: 10.1149/05804.0439ecst  0.53
2013 Shetu SS, Daas B, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688517  0.802
2013 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Ouisse T, Chaussende D, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.155439  0.821
2013 Shetu SS, Omar SU, Daniels KM, Daas B, Andrews J, Ma S, Sudarshan TS, Chandrashekhar MVS. Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC Journal of Applied Physics. 114. DOI: 10.1063/1.4826899  0.79
2012 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.665  0.815
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661  0.828
2012 Daas BK, Daniels K, Shetu S, Sudarshan TS, Chandrashekhar MVS. Study of epitaxial graphene on non-polar 6H-SiC faces Materials Science Forum. 717: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.633  0.773
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489  0.827
2012 Daas BK, Omar SU, Shetu S, Daniels KM, Ma S, Sudarshan TS, Chandrashekhar MVS. Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: On the growth of multilayer films Crystal Growth and Design. 12: 3379-3387. DOI: 10.1021/Cg300456V  0.796
2011 Daas BK, Islam MM, Chowdhury IA, Zhao F, Sudarshan TS, Chandrashekhar MVS. Doping dependence of thermal oxidation on n-type 4H-SiC Ieee Transactions On Electron Devices. 58: 115-121. DOI: 10.1109/Ted.2010.2088270  0.77
2011 Daas BK, Daniels KM, Sudarshan TS, Chandrashekhar MVS. Polariton enhanced infrared reflection of epitaxial graphene Journal of Applied Physics. 110. DOI: 10.1063/1.3666069  0.834
2011 Thomas T, Guo X, Shi J, Lepak LA, Chandrashekhar MVS, Li K, Disalvo FJ, Spencer MG. Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Journal of Crystal Growth. 316: 90-96. DOI: 10.1016/J.Jcrysgro.2010.12.059  0.675
2011 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261.  0.813
2010 Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/Apex.3.075101  0.768
2010 Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615  0.822
2009 Shivaraman S, Barton RA, Yu X, Alden J, Herman L, Chandrashekhar M, Park J, McEuen PL, Parpia JM, Craighead HG, Spencer MG. Free-standing epitaxial graphene. Nano Letters. 9: 3100-5. PMID 19663456 DOI: 10.1021/Nl900479G  0.83
2009 Qazi M, Nomani MW, Chandrashekhar MVS, Koley G. NO2 sensitivity of wide area SiC and epitaxial graphene on SiC substrates 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378345  0.68
2009 Rana F, George PA, Strait JH, Dawlaty J, Shivaraman S, Chandrashekhar M, Spencer MG. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115447  0.808
2009 Qazi M, Liu J, Chandrashekhar MVS, Koley G. Surface electronic property of SiC correlated with NO2 adsorption Journal of Applied Physics. 106. DOI: 10.1063/1.3251404  0.581
2009 Strait JH, George PA, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Emission of terahertz radiation from SiC Applied Physics Letters. 95. DOI: 10.1063/1.3194152  0.761
2009 Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398  0.656
2009 Lu J, Chandrashekhar MVS, Parks JJ, Ralph DC, Spencer MG. Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure Applied Physics Letters. 94. DOI: 10.1063/1.3126447  0.492
2009 Thomas T, Guo X, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li K, DiSalvo FJ, Lipson M, Spencer MG. Purification and mechanical nanosizing of Eu-doped GaN Journal of Crystal Growth. 311: 4402-4407. DOI: 10.1016/J.Jcrysgro.2009.07.028  0.65
2009 Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/S11664-009-0803-6  0.835
2009 Thomas T, Chandrashekhar MVS, Poitras CB, Shi J, Reiherzer JC, DiSalvo FJ, Lipson M, Spencer MG. Photoluminescence enhancement in Eu doped GaN powder by oxidative passivation of the surface Materials Research Society Symposium Proceedings. 1111: 91-96.  0.638
2008 George PA, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. Nano Letters. 8: 4248-51. PMID 19367881 DOI: 10.1021/Nl8019399  0.83
2008 Dawlaty JM, George P, Strait J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of the optical properties of graphene from THz to near-IR 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551347  0.795
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Probing ultrafast dynamics of electrons and holes in graphene 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551069  0.792
2008 Dawlaty JM, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer MG, Veksler D, Chen Y. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Applied Physics Letters. 93. DOI: 10.1063/1.2990753  0.814
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of ultrafast carrier dynamics in epitaxial graphene Applied Physics Letters. 92. DOI: 10.1063/1.2837539  0.837
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG. Effect of growth temperature on Eu incorporation in GaN powders Journal of Crystal Growth. 310: 452-456. DOI: 10.1016/J.Jcrysgro.2007.10.020  0.466
2008 Cai Z, Garzon S, Chandrashekhar MVS, Webb RA, Koley G. Synthesis and properties of high-quality InN nanowires and nanonetworks Journal of Electronic Materials. 37: 585-592. DOI: 10.1007/S11664-007-0353-8  0.577
2008 Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6  0.678
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff W, Lu J, Disalvo F, Spencer M. High intensity red emission from Eu doped GaN powders Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1495-1498. DOI: 10.1002/Pssc.200778413  0.49
2007 Chandrashekhar MVS, Lu J, Spencer MG, Qazi M, Koley G. Large area nanocrystalline graphite films on SiC for gas sensing applications Proceedings of Ieee Sensors. 558-561. DOI: 10.1109/ICSENS.2007.4388459  0.552
2007 Chandrashekhar MVS, Duggirala R, Spencer MG, Lal A. 4H SiC betavoltaic powered temperature transducer Applied Physics Letters. 91. DOI: 10.1063/1.2767780  0.446
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650  0.669
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738  0.676
2006 Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1351  0.628
2006 Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018  0.779
2006 Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799  0.635
2006 Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/S11664-006-0118-9  0.751
2005 Choi YC, Cha HY, Chandrashekhar M, Eastman LF, Spencer MG. A new approach to maximizing the power handling capability in recessed gate silicon carbide static induction transistors Pesc Record - Ieee Annual Power Electronics Specialists Conference. 2005: 2171-2174. DOI: 10.1109/PESC.2005.1581933  0.359
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