Year |
Citation |
Score |
2016 |
Hu G, Guo W, Yu R, Yang X, Zhou R, Pan C, Wang ZL. Enhanced performances of flexible ZnO/perovskite solar cells by piezo-phototronic effect Nano Energy. 23: 27-33. DOI: 10.1016/J.Nanoen.2016.02.057 |
0.317 |
|
2016 |
Agegnehu AK, Pan CJ, Tsai MC, Rick J, Su WN, Lee JF, Hwang BJ. Visible light responsive noble metal-free nanocomposite of V-doped TiO2 nanorod with highly reduced graphene oxide for enhanced solar H2 production International Journal of Hydrogen Energy. 41: 6752-6762. DOI: 10.1016/j.ijhydene.2016.03.025 |
0.393 |
|
2015 |
Pan C, Chen M, Yu R, Yang Q, Hu Y, Zhang Y, Wang ZL. Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging. Advanced Materials (Deerfield Beach, Fla.). PMID 26676842 DOI: 10.1002/Adma.201503500 |
0.344 |
|
2012 |
Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP. High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. Optics Express. 20: A13-9. PMID 22379670 DOI: 10.1364/Oe.20.000A13 |
0.688 |
|
2012 |
Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103 |
0.788 |
|
2012 |
Pan CC, Tanaka S, Wu F, Zhao Y, Speck JS, Nakamura S, Den Baars SP, Feezel D. High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.062103 |
0.606 |
|
2012 |
Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791 |
0.777 |
|
2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.579 |
|
2012 |
Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100 |
0.522 |
|
2012 |
Chung RB, Chen HT, Pan CC, Ha JS, Denbaars SP, Nakamura S. The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN Applied Physics Letters. 100. DOI: 10.1063/1.3690878 |
0.535 |
|
2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.629 |
|
2012 |
Pan CC, Nakamura S, DenBaars SP. High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.697 |
|
2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.438 |
|
2012 |
Pan CC, Nakamura S, DenBaars SP. High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.545 |
|
2012 |
Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.438 |
|
2011 |
Richardson JJ, Koslow I, Pan CC, Zhao Y, Ha JS, Den Baars SP. Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes Applied Physics Express. 4. DOI: 10.1143/Apex.4.126502 |
0.772 |
|
2011 |
Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/Apex.4.082104 |
0.674 |
|
2011 |
Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826 |
0.592 |
|
2011 |
Tanaka S, Zhao Y, Koslow I, Pan CC, Chen HT, Sonoda J, Denbaars SP, Nakamura S. Droop improvement in high current range on PSS-LEDs Electronics Letters. 47: 335-336. DOI: 10.1049/El.2010.3306 |
0.8 |
|
2010 |
Pan CC, Koslow I, Sonoda J, Ohta H, Ha JS, Shuji Nakamura, DenBaars SP. Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080210 |
0.809 |
|
2010 |
Koslow IL, Sonoda J, Chung RB, Pan CC, Brinkley S, Ohta H, Nakamura S, DenBaars SP. High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080203 |
0.781 |
|
2010 |
Zhao Y, Sonada J, Koslow I, Pan CC, Ohta H, Ha JS, DenBaars SP, Nakamura S. Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition Japanese Journal of Applied Physics. 49: 0702061-0702063. DOI: 10.1143/Jjap.49.070206 |
0.79 |
|
2010 |
Yamamoto S, Zhao Y, Pan CC, Chung RB, Fujito K, Sonoda J, DenBaars SP, Nakamura S. High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20̄21) GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.122102 |
0.685 |
|
2010 |
Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101 |
0.767 |
|
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