| Year |
Citation |
Score |
| 2023 |
Cho HH, Gorgon S, Hung HC, Huang JY, Wu YR, Li F, Greenham NC, Evans EW, Friend RH. Efficient and Bright Organic Radical Light-Emitting Diodes with Low Efficiency Roll-Off. Advanced Materials (Deerfield Beach, Fla.). e2303666. PMID 37684741 DOI: 10.1002/adma.202303666 |
0.314 |
|
| 2023 |
Shen YL, Chang CY, Chen PL, Tai CC, Wu TL, Wu YR, Huang CF. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT. Micromachines. 14. PMID 36838123 DOI: 10.3390/mi14020423 |
0.354 |
|
| 2020 |
Horng RH, Sinha S, Wu YR, Tarntair FG, Han J, Wuu DS. Characterization of semi-polar (20[Formula: see text]1) InGaN microLEDs. Scientific Reports. 10: 15966. PMID 32994488 DOI: 10.1038/s41598-020-72720-1 |
0.323 |
|
| 2020 |
Chang CW, Wadekar PV, Huang HC, Chen QY, Wu YR, Chen RT, Tu LW. Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells. Nanoscale Research Letters. 15: 167. PMID 32816117 DOI: 10.1186/s11671-020-03392-z |
0.323 |
|
| 2020 |
Chow YC, Lee C, Wong MS, Wu YR, Nakamura S, DenBaars SP, Bowers JE, Speck JS. Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805. PMID 32752371 DOI: 10.1364/Oe.399924 |
0.427 |
|
| 2020 |
Yu C, Lin C, Wu Y. Analysis and Optimization of GaN Based Multi-Channels FinFETs Ieee Transactions On Nanotechnology. 19: 439-445. DOI: 10.1109/Tnano.2020.2998840 |
0.337 |
|
| 2020 |
Lynsky C, Alhassan AI, Lheureux G, Bonef B, DenBaars SP, Nakamura S, Wu Y, Weisbuch C, Speck JS. Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.054604 |
0.416 |
|
| 2020 |
Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, Speck JS. Low-temperature carrier transport across InGaN multiple quantum wells : Evidence of ballistic hole transport Physical Review B. 101: 75305. DOI: 10.1103/Physrevb.101.075305 |
0.409 |
|
| 2020 |
Huang J, Wang M, Chen G, Li J, Chen S, Lee J, Chiu T, Wu Y. Analysis of the triplet exciton transfer mechanism at the heterojunctions of organic light-emitting diodes Journal of Physics D. 53: 345501. DOI: 10.1088/1361-6463/Ab8A94 |
0.328 |
|
| 2020 |
Tsai T, Michalczewski K, Martyniuk P, Wu C, Wu Y. Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system Journal of Applied Physics. 127: 33104. DOI: 10.1063/1.5131470 |
0.381 |
|
| 2019 |
Chen CC, Shiau SY, Wu MF, Wu YR. Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines. Scientific Reports. 9: 16251. PMID 31700001 DOI: 10.1038/S41598-019-52275-6 |
0.326 |
|
| 2019 |
Michalczewski K, Martyniuk P, Kubiszyn L, Wu C, Wu Y, Jurenczyk J, Rogalski A, Piotrowski J. Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling Ieee Electron Device Letters. 40: 1396-1398. DOI: 10.1109/Led.2019.2930106 |
0.305 |
|
| 2019 |
Huang J, Chang E, Wu Y. Optimization of MAPbI $_3$ -Based Perovskite Solar Cell With Textured Surface Ieee Journal of Photovoltaics. 9: 1686-1692. DOI: 10.1109/Jphotov.2019.2941170 |
0.341 |
|
| 2019 |
Marcinkevičius S, Yapparov R, Kuritzky LY, Wu Y, Nakamura S, DenBaars SP, Speck JS. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells Applied Physics Letters. 114: 151103. DOI: 10.1063/1.5092585 |
0.448 |
|
| 2019 |
Chang L, Lin J, Dai C, Yang M, Jiang Y, Wu Y, Wu C. Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs Journal of Applied Physics. 125: 94502. DOI: 10.1063/1.5085275 |
0.365 |
|
| 2018 |
Chang WY, Kuo Y, Yao YF, Yang CC, Wu YR, Kiang YW. Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode. Optics Express. 26: 8340-8355. PMID 29715802 DOI: 10.1364/Oe.26.008340 |
0.369 |
|
| 2018 |
Chen H, Speck JS, Weisbuch C, Wu Y. Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations Applied Physics Letters. 113: 153504. DOI: 10.1063/1.5051081 |
0.44 |
|
| 2018 |
Huang C, Tai T, Lin J, Chang T, Liu C, Lu T, Wu Y, Kuo H. Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing Acs Photonics. 5: 2724-2729. DOI: 10.1021/Acsphotonics.8B00471 |
0.317 |
|
| 2018 |
Hsiao H, Wu Y. 3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects Physica Status Solidi (a). 216: 1800524. DOI: 10.1002/Pssa.201800524 |
0.379 |
|
| 2017 |
Su CY, Tsai MC, Chou KP, Chiang HC, Lin HH, Su MY, Wu YR, Kiang YW, Yang CC. Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well. Optics Express. 25: 26365-26377. PMID 29092128 DOI: 10.1364/Oe.25.026365 |
0.438 |
|
| 2017 |
Kung TJ, Huang JY, Huang JJ, Tseng SH, Leung MK, Chiu TL, Lee JH, Wu YR. Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation. Optics Express. 25: 25492-25503. PMID 29041216 DOI: 10.1364/Oe.25.025492 |
0.444 |
|
| 2017 |
Su C, Tu C, Liu W, Lin C, Yao Y, Chen H, Wu Y, Kiang Y, Yang C. Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer Ieee Transactions On Electron Devices. 64: 3226-3233. DOI: 10.1109/Ted.2017.2711023 |
0.418 |
|
| 2017 |
Ho S, Lee C, Tzou A, Kuo H, Wu Y, Huang J. Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure Ieee Transactions On Electron Devices. 64: 1505-1510. DOI: 10.1109/Ted.2017.2657683 |
0.406 |
|
| 2017 |
Chen H, Su C, Tu C, Yao Y, Lin C, Wu Y, Kiang Y, Yang CCC. Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure Ieee Transactions On Electron Devices. 64: 115-120. DOI: 10.1109/Ted.2016.2631148 |
0.369 |
|
| 2017 |
Li C, Piccardo M, Lu L, Mayboroda S, Martinelli L, Peretti J, Speck JS, Weisbuch C, Filoche M, Wu Y. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Physical Review B. 95. DOI: 10.1103/Physrevb.95.144206 |
0.315 |
|
| 2017 |
Piccardo M, Li C, Wu Y, Speck JS, Bonef B, Farrell RM, Filoche M, Martinelli L, Peretti J, Weisbuch C. Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Physical Review B. 95: 144205. DOI: 10.1103/Physrevb.95.144205 |
0.394 |
|
| 2017 |
Browne DA, Fireman MN, Mazumder B, Kuritzky LY, Wu Y, Speck JS. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition Semiconductor Science and Technology. 32: 25010. DOI: 10.1088/1361-6641/32/2/025010 |
0.353 |
|
| 2017 |
Chen S, Wu Y. A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons Applied Physics Letters. 110: 201109. DOI: 10.1063/1.4983721 |
0.352 |
|
| 2017 |
Huang J, Yun L, Kung T, Chen C, Lee J, Wu Y, Chiu T, Chou P, Leung M. Networking hole and electron hopping paths by Y-shaped host molecules: promoting blue phosphorescent organic light emitting diodes Journal of Materials Chemistry C. 5: 3600-3608. DOI: 10.1039/C6Tc05538A |
0.359 |
|
| 2017 |
Cheng C, Huang T, Wu C, Chen MK, Chu CH, Wu Y, Shih M, Lee C, Kuo H, Tsai DP, Lin G. Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates Journal of Materials Chemistry C. 5: 607-617. DOI: 10.1039/C6Tc04318F |
0.405 |
|
| 2017 |
Chen S, Wu Y. Electronic properties of MoS2 nanoribbon with strain using tight-binding method Physica Status Solidi B-Basic Solid State Physics. 254: 1600565. DOI: 10.1002/Pssb.201600565 |
0.303 |
|
| 2016 |
Ho K, Lu I, Wu Y. Development of numerical modeling program for organic/inorganic hybrid solar cells by including tail/Interfacial states models Proceedings of Spie. 9743: 974308. DOI: 10.1117/12.2211904 |
0.373 |
|
| 2016 |
Ho K, Li C, Syu H, Lai Y, Lin C, Wu Y. Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model Journal of Applied Physics. 120: 215501. DOI: 10.1063/1.4970827 |
0.339 |
|
| 2016 |
Wu C, Wu Y. Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure Aip Advances. 6: 115201. DOI: 10.1063/1.4967202 |
0.327 |
|
| 2015 |
Chen X, Ho KY, Wu YR. Modeling and optimization of p-AlGaN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs. Optics Express. 23: 32367-76. PMID 26699026 DOI: 10.1364/Oe.23.032367 |
0.354 |
|
| 2015 |
Chen X, Wu Y. Numerical study of current spreading and light extraction in deep UV light-emitting diode Proceedings of Spie. 9383. DOI: 10.1117/12.2078752 |
0.41 |
|
| 2015 |
Lee F, Su L, Wang C, Wu Y, Huang J. Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors Ieee Electron Device Letters. 36: 232-234. DOI: 10.1109/Led.2015.2395454 |
0.406 |
|
| 2015 |
Browne DA, Mazumder B, Wu YR, Speck JS. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH<inf>3</inf> molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4919750 |
0.493 |
|
| 2015 |
Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/El.2015.1647 |
0.354 |
|
| 2015 |
Wu C, Li C, Wu Y. Percolation transport study in nitride based LED by considering the random alloy fluctuation Journal of Computational Electronics. 14: 416-424. DOI: 10.1007/S10825-015-0688-Y |
0.455 |
|
| 2014 |
Lai KY, Lin GJ, Wu YR, Tsai ML, He JH. Efficiency dip observed with InGaN-based multiple quantum well solar cells. Optics Express. 22: A1753-60. PMID 25607489 DOI: 10.1364/Oe.22.0A1753 |
0.403 |
|
| 2014 |
Zhao Y, Farrell RM, Wu Y, Speck JS. Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices Japanese Journal of Applied Physics. 53: 100206. DOI: 10.7567/Jjap.53.100206 |
0.34 |
|
| 2014 |
Zhao Y, Wu F, Yang T, Wu Y, Nakamura S, Speck JS. Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells Applied Physics Express. 7: 025503. DOI: 10.7567/Apex.7.025503 |
0.375 |
|
| 2014 |
Yang T, Speck JS, Wu Y. Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model Proceedings of Spie. 8986. DOI: 10.1117/12.2039374 |
0.418 |
|
| 2014 |
Li C, Rosmeulen M, Simoen E, Wu Y. Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs Ieee Transactions On Electron Devices. 61: 511-517. DOI: 10.1109/Ted.2013.2294534 |
0.411 |
|
| 2014 |
Chen HS, Lin CH, Shih PY, Hsieh C, Su CY, Wu YR, Kiang YW, Yang CC. Thermal effects in a bendable InGaN/GaN quantum-well light-emitting diode Ieee Photonics Technology Letters. 26: 1442-1445. DOI: 10.1109/Lpt.2014.2326679 |
0.429 |
|
| 2014 |
Li H, Yin Y, Chang C, Tsai C, Hsu Y, Lin D, Wu Y, Kuo H, Huang JJ. Mechanisms of the Asymmetric Light Output Enhancements in \(a\) -Plane GaN Light-Emitting Diodes With Photonic Crystals Ieee Journal of Quantum Electronics. 50: 1-6. DOI: 10.1109/Jqe.2014.2362552 |
0.392 |
|
| 2014 |
Yang T, Shivaraman R, Speck JS, Wu Y. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Journal of Applied Physics. 116: 113104. DOI: 10.1063/1.4896103 |
0.472 |
|
| 2014 |
Wu CW, Wu YR. Thermoelectric characteristic of the rough InN/GaN core-shell nanowires Journal of Applied Physics. 116. DOI: 10.1063/1.4894510 |
0.344 |
|
| 2014 |
Chou Y, Li H, Yin Y, Wang Y, Lin Y, Lin D, Wu Y, Kuo H, Huang JJ. Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals Journal of Applied Physics. 115: 193107. DOI: 10.1063/1.4876655 |
0.353 |
|
| 2014 |
Kyle ECH, Kaun SW, Burke PG, Wu F, Wu YR, Speck JS. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115. DOI: 10.1063/1.4874735 |
0.358 |
|
| 2014 |
Lee CY, Yeh CM, Liu YT, Fan CM, Huang CF, Wu YR. The optimization study of textured a-Si:H solar cells Journal of Renewable and Sustainable Energy. 6. DOI: 10.1063/1.4870993 |
0.318 |
|
| 2013 |
Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc08 |
0.371 |
|
| 2013 |
Chi K, Yeh S, Yeh Y, Lin K, Shi J, Wu Y, Lee ML, Sheu J. GaN-Based Dual-Color LEDs With $p$ -Type Insertion Layer for Controlling the Ratio of Two-Color Intensities Ieee Transactions On Electron Devices. 60: 2821-2826. DOI: 10.1109/Ted.2013.2272803 |
0.437 |
|
| 2013 |
Chen L, Li C, Tan J, Huang L, Wu Y, Huang JJ. On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays Ieee Journal of Quantum Electronics. 49: 224-231. DOI: 10.1109/Jqe.2013.2237885 |
0.457 |
|
| 2013 |
Wang H, Yu P, Wu Y, Kuo H, Chang EY, Lin S. Projected Efficiency of Polarization-Matched p-In$_{\bm x}$Ga$_{\bm {1-x}}$N/i-In $_{\bm y}$Ga$_{\bm{1-y}}$N/n-GaN Double Heterojunction Solar Cells Ieee Journal of Photovoltaics. 3: 985-990. DOI: 10.1109/Jphotov.2013.2252953 |
0.375 |
|
| 2013 |
Lee J, Wu Z, Liao Y, Wu Y, Lin S, Lee S. The operation principle of the well in quantum dot stack infrared photodetector Journal of Applied Physics. 114: 244504. DOI: 10.1063/1.4849875 |
0.437 |
|
| 2013 |
Li C, Yeh P, Yu J, Peng L, Wu Y. Scaling performance of Ga2O3/GaN nanowire field effect transistor Journal of Applied Physics. 114: 163706. DOI: 10.1063/1.4827190 |
0.381 |
|
| 2013 |
Pal J, Migliorato MA, Li CK, Wu YR, Crutchley BG, Marko IP, Sweeney SJ. Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management Journal of Applied Physics. 114. DOI: 10.1063/1.4818794 |
0.307 |
|
| 2013 |
Chen C, Wu Y. Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors Journal of Applied Physics. 113: 214501. DOI: 10.1063/1.4808241 |
0.424 |
|
| 2013 |
Li CK, Yang HC, Hsu TC, Shen YJ, Liu AS, Wu YR. Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Journal of Applied Physics. 113. DOI: 10.1063/1.4804415 |
0.458 |
|
| 2012 |
Senanayake P, Hung CH, Farrell A, Ramirez DA, Shapiro J, Li CK, Wu YR, Hayat MM, Huffaker DL. Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. Nano Letters. 12: 6448-52. PMID 23206195 DOI: 10.1021/Nl303837Y |
0.392 |
|
| 2012 |
Yu JW, Wu YR, Peng LH. Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.912041 |
0.376 |
|
| 2012 |
Wang K, Wu Y. Intersubband and intrasubband transition in InGaN quantum dot for solar cell application Proceedings of Spie. 8256. DOI: 10.1117/12.908674 |
0.381 |
|
| 2012 |
Li C, Wu Y. Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs Ieee Transactions On Electron Devices. 59: 400-407. DOI: 10.1109/Ted.2011.2176132 |
0.399 |
|
| 2012 |
Lang JR, Young NG, Farrell RM, Wu YR, Speck JS. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4765068 |
0.466 |
|
| 2012 |
Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949 |
0.427 |
|
| 2012 |
Wu Y, Shivaraman R, Wang K, Speck JS. Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Applied Physics Letters. 101: 83505. DOI: 10.1063/1.4747532 |
0.448 |
|
| 2012 |
Wang CP, Wu YR. Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode Journal of Applied Physics. 112. DOI: 10.1063/1.4742050 |
0.415 |
|
| 2012 |
Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106 |
0.331 |
|
| 2011 |
Chen LY, Huang HH, Chang CH, Huang YY, Wu YR, Huang J. Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays. Optics Express. 19: A900-7. PMID 21747560 DOI: 10.1364/Oe.19.00A900 |
0.404 |
|
| 2011 |
Chen M, Wu Y. Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1352 |
0.309 |
|
| 2011 |
Huang H, Wu Y. Study of thermoelectric properties of InGaN/GaN superlattice Mrs Proceedings. 1329. DOI: 10.1557/Opl.2011.1235 |
0.361 |
|
| 2011 |
Li C, Wu Y. Current spreading effect in vertical GaN/InGaN LEDs Proceedings of Spie. 7939. DOI: 10.1117/12.877663 |
0.392 |
|
| 2011 |
Sun Y, Cheng Y, Wang S, Huang Y, Chang C, Yang S, Chen L, Ke M, Li C, Wu Y, Huang J. Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing Ieee Electron Device Letters. 32: 182-184. DOI: 10.1109/Led.2010.2093503 |
0.44 |
|
| 2011 |
Lu I, Wu Y, Singh J. Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method Physica Status Solidi (C). 8: 2393-2395. DOI: 10.1002/Pssc.201001054 |
0.598 |
|
| 2011 |
Huang H, Lu I, Wu Y. Study of thermoelectric properties of indium nitride nanowire Physica Status Solidi (a). 208: 1562-1565. DOI: 10.1002/Pssa.201001047 |
0.38 |
|
| 2010 |
Huang C, Chin H, Wu Y, Cheng I, Chen JZ, Chiu K, Lin T. Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layers With Modulation Doping and Polarization Effects Ieee Transactions On Electron Devices. 57: 696-703. DOI: 10.1109/Ted.2009.2039527 |
0.401 |
|
| 2010 |
Chang C, Wu Y. Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells Ieee Journal of Quantum Electronics. 46: 884-889. DOI: 10.1109/Jqe.2010.2040515 |
0.425 |
|
| 2010 |
Yu JW, Wu YR, Huang JJ, Peng LH. 75GHz Ga2O3/GaN single nanowire metal-oxide- semiconductor field-effect transistors Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619673 |
0.375 |
|
| 2010 |
Lu I, Wu Y, Singh J. A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method Journal of Applied Physics. 108: 124508. DOI: 10.1063/1.3524544 |
0.614 |
|
| 2010 |
Dang PY, Wu YR. Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers Journal of Applied Physics. 108. DOI: 10.1063/1.3498805 |
0.408 |
|
| 2010 |
Chin H, Cheng I, Huang C, Wu Y, Lu W, Lee W, Chen JZ, Chiu K, Lin T. Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process Journal of Applied Physics. 108: 54503. DOI: 10.1063/1.3475500 |
0.384 |
|
| 2010 |
Huang H, Wu Y. Light emission polarization properties of semipolar InGaN/GaN quantum well Journal of Applied Physics. 107: 53112. DOI: 10.1063/1.3327794 |
0.445 |
|
| 2010 |
Huang H, Wu Y. Light emission polarization properties of strained (11$ \bar 2 $2) semipolar InGaN quantum well Physica Status Solidi (C). 7: 1859-1862. DOI: 10.1002/Pssc.201083456 |
0.447 |
|
| 2009 |
Chin H, Huang C, Wu Y, Cheng I, Chen JZ, Chiu K, Lin T. Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure Mrs Proceedings. 1201. DOI: 10.1557/Proc-1201-H04-05 |
0.336 |
|
| 2009 |
Pan K, Cheng Y, Chen L, Huang Y, Ke M, Chen C, Wu Y, Huang J. Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays Ieee Photonics Technology Letters. 21: 1683-1685. DOI: 10.1109/Lpt.2009.2031682 |
0.379 |
|
| 2009 |
Wu Y, Chiu C, Chang C, Yu P, Kuo H. Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs Ieee Journal of Selected Topics in Quantum Electronics. 15: 1226-1233. DOI: 10.1109/Jstqe.2009.2015583 |
0.394 |
|
| 2009 |
Huang H, Wu Y. Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes Journal of Applied Physics. 106: 23106. DOI: 10.1063/1.3176964 |
0.474 |
|
| 2009 |
Wu Y, Lin Y, Huang H, Singh J. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting Journal of Applied Physics. 105: 13117. DOI: 10.1063/1.3065274 |
0.642 |
|
| 2008 |
Yu P, Tsai M, Chiu C, Kuo H, Wu Y. Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Proceedings of Spie. 7135. DOI: 10.1117/12.804065 |
0.382 |
|
| 2008 |
Wu Y, Hinckley JM, Singh J. Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption Journal of Electronic Materials. 37: 578-584. DOI: 10.1007/S11664-007-0320-4 |
0.579 |
|
| 2007 |
Wu Y, Singh J. Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance Journal of Applied Physics. 101: 113712. DOI: 10.1063/1.2745286 |
0.564 |
|
| 2006 |
Wu Y, Singh M, Singh J. Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length Ieee Transactions On Electron Devices. 53: 588-593. DOI: 10.1109/Ted.2006.870571 |
0.659 |
|
| 2005 |
Wu Y, Singh M, Singh J. Sources of transconductance collapse in III-V nitrides - consequences of velocity-field relations and source/gate design Ieee Transactions On Electron Devices. 52: 1048-1054. DOI: 10.1109/Ted.2005.848084 |
0.662 |
|
| 2005 |
Singh M, Wu Y, Singh J. Velocity overshoot effects and scaling issues in III-V nitrides Ieee Transactions On Electron Devices. 52: 311-316. DOI: 10.1109/Ted.2005.843966 |
0.674 |
|
| 2005 |
Wu Y, Singh J. Polar heterostructure for multifunction devices: theoretical studies Ieee Transactions On Electron Devices. 52: 284-293. DOI: 10.1109/Ted.2004.842546 |
0.443 |
|
| 2004 |
Wu Y, Singh J. Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors Applied Physics Letters. 85: 1223-1225. DOI: 10.1063/1.1784039 |
0.56 |
|
| 2003 |
Wu Y, Singh M, Singh J. Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y11.1 |
0.733 |
|
| 2003 |
Wu Y, Singh M, Singh J. Gate leakage suppression and contact engineering in nitride heterostructures Journal of Applied Physics. 94: 5826-5831. DOI: 10.1063/1.1618926 |
0.742 |
|
| 2003 |
Singh M, Wu Y, Singh J. Examination of LiNbO3/nitride heterostructures Solid-State Electronics. 47: 2155-2159. DOI: 10.1016/S0038-1101(03)00189-8 |
0.704 |
|
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