| Year |
Citation |
Score |
| 2017 |
Ricker RJ, Provence S, Murray LM, Norton DT, Olesberg JT, Prineas JP, Boggess TF. 512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes Proceedings of Spie. 10124. DOI: 10.1117/12.2258468 |
0.782 |
|
| 2016 |
Ejzak GA, Dickason J, Marks JA, Nabha K, McGee RT, Waite NA, Benedict JT, Hernandez MA, Provence SR, Norton DT, Prineas JP, Goossen KW, Kiamilev FE, Boggess TF. 512 $\times$ 512, 100 Hz Mid-Wave Infrared LED Microdisplay System Journal of Display Technology. 12: 1139-1144. DOI: 10.1109/Jdt.2016.2590563 |
0.752 |
|
| 2015 |
Ricker RJ, Hudson A, Provence S, Norton DT, Olesberg JT, Murray LM, Prineas JP, Boggess TF. Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/Jqe.2015.2497538 |
0.465 |
|
| 2013 |
Murray LM, Yildirim A, Provence SR, Norton DT, Boggess TF, Prineas JP. Causes and elimination of pyramidal defects in GaSb-based epitaxial layers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792515 |
0.73 |
|
| 2013 |
Norton DT, Olesberg JT, McGee RT, Waite NA, Dickason J, Goossen KW, Lawler J, Sullivan G, Ikhlassi A, Kiamilev F, Koerperick EJ, Murray LM, Prineas JP, Boggess TF. 512 × 512 individually addressable MWIR LED arrays based on type-II InAs/GaSb superlattices Ieee Journal of Quantum Electronics. 49: 753-759. DOI: 10.1109/Jqe.2013.2272878 |
0.712 |
|
| 2013 |
Olson BV, Gehlsen MP, Boggess TF. Nondegenerate two-photon absorption in GaSb Optics Communications. 304: 54-57. DOI: 10.1016/J.Optcom.2013.04.035 |
0.718 |
|
| 2011 |
Koerperick EJ, Norton DT, Olesberg JT, Olson BV, Prineas JP, Boggess TF. Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared Ieee Journal of Quantum Electronics. 47: 50-54. DOI: 10.1109/Jqe.2010.2072492 |
0.69 |
|
| 2007 |
Hall KC, Koerperick EJ, Boggess TF, Shchekin OB, Deppe DG. Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Applied Physics Letters. 90. DOI: 10.1063/1.2437063 |
0.733 |
|
| 2005 |
Gündoǧdu K, Hall KC, Koerperick EJ, Pryor CE, Flatté ME, Boggess TF, Shchekin OB, Deppe DG. Electron and hole spin dynamics in semiconductor quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857067 |
0.732 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Ultrafast electron capture into p-modulation-doped quantum dots Applied Physics Letters. 85: 4570-4572. DOI: 10.1063/1.1815371 |
0.369 |
|
| 2004 |
Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Efficient electron spin detection with positively charged quantum dots Applied Physics Letters. 84: 2793-2795. DOI: 10.1063/1.1695637 |
0.37 |
|
| 2001 |
Olesberg JT, Lau WH, Flatté ME, Yu C, Altunkaya E, Shaw EM, Hasenberg TC, Boggess TF. Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice Physical Review B. 64: 201301. DOI: 10.1103/Physrevb.64.201301 |
0.305 |
|
| 2001 |
Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Cao C, Shchekin OB. Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots Applied Physics Letters. 79: 3320-3322. DOI: 10.1063/1.1418035 |
0.319 |
|
| 2001 |
Boggess TF, Zhang L, Deppe DG, Huffaker DL, Cao C. Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots Applied Physics Letters. 78: 276-278. DOI: 10.1063/1.1337638 |
0.376 |
|
| 2000 |
Hasenberg TC, Day PS, Shaw EM, Magarrell DJ, Olesberg JT, Yu C, Boggess TF, Flátte ME. Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes Journal of Vacuum Science & Technology B. 18: 1623-1627. DOI: 10.1116/1.591440 |
0.362 |
|
| 2000 |
Olesberg JT, Flatté ME, Boggess TF. Comparison of linewidth enhancement factors in midinfrared active region materials Journal of Applied Physics. 87: 7164-7168. DOI: 10.1063/1.372964 |
0.31 |
|
| 2000 |
Boggess TF, Olesberg JT, Yu C, Flatté ME, Lau WH. Room-temperature electron spin relaxation in bulk InAs Applied Physics Letters. 77: 1333-1335. DOI: 10.1063/1.1290143 |
0.339 |
|
| 2000 |
Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. DOI: 10.1063/1.125991 |
0.407 |
|
| 1999 |
Anson SA, Olesberg JT, Flatté ME, Hasenberg TC, Boggess TF. Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer Journal of Applied Physics. 86: 713-718. DOI: 10.1063/1.370793 |
0.381 |
|
| 1999 |
Olesberg JT, Flatté ME, Brown BJ, Grein CH, Hasenberg TC, Anson SA, Boggess TF. Optimization of active regions in midinfrared lasers Applied Physics Letters. 74: 188-190. DOI: 10.1063/1.123288 |
0.353 |
|
| 1998 |
Jang DJ, Flatté ME, Grein CH, Olesberg JT, Hasenberg TC, Boggess TF. Temperature Dependence Of Auger Recombination In A Multilayer Narrow-Band-Gap Superlattice Physical Review B. 58: 13047-13054. DOI: 10.1103/Physrevb.58.13047 |
0.319 |
|
| 1998 |
Olesberg JT, Anson SA, McCahon SW, Flatté ME, Boggess TF, Chow DH, Hasenberg TC. Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells Applied Physics Letters. 72: 229-231. DOI: 10.1063/1.120694 |
0.379 |
|
| 1997 |
Flatté ME, Hasenberg TC, Olesberg JT, Anson SA, Boggess TF, Yan C, McDaniel DL. III-V interband 5.2 μm laser operating at 185 K Applied Physics Letters. 71: 3764-3766. DOI: 10.1063/1.120499 |
0.417 |
|
| 1997 |
Flatté ME, Olesberg JT, Anson SA, Boggess TF, Hasenberg TC, Miles RH, Grein CH. Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers Applied Physics Letters. 70: 3212-3214. DOI: 10.1063/1.119128 |
0.379 |
|
| 1997 |
Jang D-, Olesberg JT, Flatté ME, Boggess TF, Hasenberg TC. Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion Applied Physics Letters. 70: 1125-1127. DOI: 10.1063/1.118504 |
0.427 |
|
| 1996 |
McCahon SW, Anson SA, Jang D‐, Flatté ME, Boggess TF, Chow DH, Hasenberg TC, Grein CH. Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well Applied Physics Letters. 68: 2135-2137. DOI: 10.1063/1.115609 |
0.424 |
|
| 1995 |
McCahon SW, Anson SA, Jang DJ, Boggess TF. Generation of 3-4- mu m femtosecond pulses from a synchronously pumped, critically phase-matched KTiOPO4 optical parametric oscillator. Optics Letters. 20: 2309. PMID 19865202 DOI: 10.1364/Ol.20.002309 |
0.34 |
|
| 1994 |
Rychnovsky S, Allan GR, Venzke CH, Boggess TF. Picosecond measurements of absorptive and refractive optical nonlinearities in GaP at 532 nm. Optics Letters. 19: 527-9. PMID 19844361 DOI: 10.1364/Ol.19.000527 |
0.385 |
|
| 1993 |
Boggess TF. Picosecond investigations of optical limiting mechanisms in King's complex Optical Engineering. 32: 1063. DOI: 10.1117/12.133318 |
0.333 |
|
| 1993 |
Huang XR, McCallum DS, Dawson MD, Smirl AL, Boggess TF, Hasenberg TC, Tober RL. Ambipolar diffusion and carrier lifetime measurements in all-binary (InAs)2(GaAs)5 strained quantum wells grown on GaAs Journal of Applied Physics. 74: 1868-1873. DOI: 10.1063/1.355301 |
0.365 |
|
| 1993 |
Cartwright AN, McCallum DS, Boggess TF, Smirl AL, Moise TS, Guido LJ, Barker RC, Wherrett BS. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells Journal of Applied Physics. 73: 7767-7774. DOI: 10.1063/1.353976 |
0.365 |
|
| 1993 |
Tutt LW, Boggess TF. A review of optical limiting mechanisms and devices using organics, fullerenes, semiconductors and other materials Progress in Quantum Electronics. 17: 299-338. DOI: 10.1016/0079-6727(93)90004-S |
0.308 |
|
| 1992 |
Rychnovsky SJ, Allan GR, Venzke CH, Smirl AL, Boggess TF. Optical nonlinearities and optical limiting in GaP at 532 nm Proceedings of Spie. 1692: 191-196. DOI: 10.1117/12.138062 |
0.396 |
|
| 1992 |
Allan GR, Rychnovsky SJ, Smirl AL, Boggess TF, Tutt LW, Kost AR, Klein MB. Picosecond measurements of optical nonlinearities in King's complex and synthesized analogues Proceedings of Spie. 1692: 170-176. DOI: 10.1117/12.138059 |
0.301 |
|
| 1992 |
McCallum DS, Huang XR, Dawson MD, Boggess TF, Smirl AL, Hasenberg TC, Kost A. Picosecond optical nonlinearities in a strained InAs/GaAs hetero n-i-p-i structure Journal of Applied Physics. 71: 929-932. DOI: 10.1063/1.351315 |
0.364 |
|
| 1992 |
Allan GR, Labergerie DR, Rychnovsky SJ, Boggess TF, Smirl AL, Tutt L. Picosecond reverse saturable absorption in King's complex [(C5H5)Fe(CO)]4 The Journal of Physical Chemistry. 96: 6313-6317. DOI: 10.1021/J100194A040 |
0.316 |
|
| 1991 |
Schroeder WA, Stark TS, Dawson MD, Boggess TF, Smirl AL, Valley GC. Picosecond separation and measurement of coexisting photorefractive, bound-electronic, and free-carrier grating dynamics in GaAs. Optics Letters. 16: 159-61. PMID 19773868 DOI: 10.1364/Ol.16.000159 |
0.337 |
|
| 1991 |
Boggess TF. Single-beam and multiple-beam optical limiters using semiconductors Optical Engineering. 30: 629. DOI: 10.1117/12.55847 |
0.309 |
|
| 1991 |
McCallum DS, Huang XR, Dawson MD, Boggess TF, Smirl AL, Hasenberg TC, Kost A. Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i's Journal of Applied Physics. 70: 6891-6897. DOI: 10.1063/1.349813 |
0.363 |
|
| 1991 |
McCallum DS, Huang XR, Boggess TF, Dawson MD, Smirl AL, Hasenberg TC. Room‐temperature optical nonlinearities in strained (InAs)2(GaAs)5superlattice quantum wells Journal of Applied Physics. 69: 3243-3248. DOI: 10.1063/1.348544 |
0.373 |
|
| 1991 |
Hasenberg TC, McCallum DS, Huang XR, Dawson MD, Boggess TF, Smirl AL. Linear optical properties of quantum wells composed of all‐binary InAs/GaAs short‐period strained‐layer superlattices Applied Physics Letters. 58: 937-939. DOI: 10.1063/1.104483 |
0.412 |
|
| 1990 |
McCallum D, Huang X, Dawson MD, Boggess TF, Smirl AL, Hasenberg T. Picosecond room temperature excitonic-absorption saturation and four-wave mixing in InAs/GaAs short-period strained-layer superlattices Superlattices and Microstructures. 8: 127-130. DOI: 10.1016/0749-6036(90)90289-J |
0.401 |
|
| 1989 |
Valley GC, Boggess TF, Dubard J, Smirl AL. Picosecond pump-probe technique to measure deep-level, free-carrier, and two photon cross sections in GaAs Journal of Applied Physics. 66: 2407-2413. DOI: 10.1063/1.344248 |
0.342 |
|
| 1989 |
Kalt H, Smirl AL, Boggess TF. Stimulated emission in indirect gap AlxGa1-xAs Journal of Applied Physics. 65: 294-299. DOI: 10.1063/1.342539 |
0.331 |
|
| 1988 |
Smirl AL, Valley GC, Bohnert KM, Boggess TF. Picosecond Photorefractive and Free-Carrier Transient Energy Transfer in GaAs at 1 µm Ieee Journal of Quantum Electronics. 24: 289-303. DOI: 10.1109/3.125 |
0.366 |
|
| 1988 |
Tober RL, Smirl AL, Boggess TF, Schulman JN. Piezoreflectance as a supplement to photoreflectance for nondestructive characterization of GaAs/AlxGa1-xAs multiple quantum wells Journal of Applied Physics. 64: 4678-4682. DOI: 10.1063/1.341251 |
0.314 |
|
| 1987 |
Dawson MD, Boggess TF, Smirl AL. Picosecond and femtosecond pulse generation near 1000 nm from a frequency-doubled Nd:YAG-pumped cw dye laser. Optics Letters. 12: 590-2. PMID 19741808 DOI: 10.1364/Ol.12.000590 |
0.314 |
|
| 1987 |
Smirl AL, Valley GC, Mullen RA, Bohnert K, Mire CD, Boggess TF. Picosecond photorefractive effect in BaTiO(3). Optics Letters. 12: 501-3. PMID 19741778 DOI: 10.1364/Ol.12.000501 |
0.381 |
|
| 1987 |
Dawson MD, Boggess TF, Smirl AL. Femtosecond synchronously pumped Pyridine dye lasers. Optics Letters. 12: 254-6. PMID 19738856 DOI: 10.1364/Ol.12.000254 |
0.345 |
|
| 1987 |
Kalt H, Bohnert K, Norwood DP, Boggess TF, Smirl AL, D'Haenens IJ. Nonlinear optical properties of the electron-hole plasma in Al 0.52Ga0.48As Journal of Applied Physics. 62: 4187-4191. DOI: 10.1063/1.339087 |
0.314 |
|
| 1987 |
Boggess TF, Bohnert K, Norwood DP, Mire CD, Smirl AL. Nonlinear refraction in silicon induced by one-micron picosecond pulses Optics Communications. 64: 387-392. DOI: 10.1016/0030-4018(87)90257-4 |
0.365 |
|
| 1986 |
Dawson MD, Boggess TF, Garvey DW, Smirl AL. Variable intracavity spectral windowing in a synchronously pumped femtosecond cw dye laser. Optics Letters. 11: 721-3. PMID 19738739 DOI: 10.1364/Ol.11.000721 |
0.326 |
|
| 1986 |
Valley GC, Smirl AL, Klein MB, Bohnert K, Boggess TF. Picosecond photorefractive beam coupling in GaAs. Optics Letters. 11: 647-9. PMID 19738716 DOI: 10.1364/Ol.11.000647 |
0.373 |
|
| 1986 |
Smirl AL, Boggess TF, Boyd IW, Moss SC, Bohnert K, Mansour K. Application Of Nonlinear Optical Properties And Melt Dynamics Of Crystalline Silicon To Optical Limiting Of 1 Micrometer Picosecond Radiation Optical Engineering. 25: 251157. DOI: 10.1117/12.7973794 |
0.319 |
|
| 1986 |
Boggess TF, Boyd IW, Smirl AL, Bohnert KM, Mansour K, Moss SC. Simultaneous Measurement of the Two-Photon Coefficient and Free-Carrier Cross Section Above the Bandgap of Crystalline Silicon Ieee Journal of Quantum Electronics. 22: 360-368. DOI: 10.1109/Jqe.1986.1072964 |
0.353 |
|
| 1986 |
Bohnert K, Boggess TF, Mansour K, Maxson D, Smirl AL. Tunable Near-Infrared Picosecond Pulses from a Short-Cavity Dye Laser Ieee Journal of Quantum Electronics. 22: 2195-2199. DOI: 10.1109/Jqe.1986.1072931 |
0.33 |
|
| 1986 |
Boyd IW, Boggess TF, Smirl AL, Moss SC. Dynamic picosecond studies of optically excited silicon Optica Acta. 33: 527-534. DOI: 10.1080/713821949 |
0.328 |
|
| 1986 |
Smirl AL, Boyd IW, Boggess TF, Moss SC, Van Driel HM. Structural changes produced in silicon by intense 1-μm ps pulses Journal of Applied Physics. 60: 1169-1182. DOI: 10.1063/1.337362 |
0.336 |
|
| 1985 |
Van Stryland EW, Vanherzeele H, Woodall MA, Soileau MJ, Smirl AL, Guha S, Boggess TF. Two Photon Absorption, Nonlinear Refraction, And Optical Limiting In Semiconductors Optical Engineering. 24. DOI: 10.1117/12.7973538 |
0.368 |
|
| 1985 |
Boggess TF, Smirl AL, Moss SC, Boyd IW, Van Stryland EW. Optical Limiting in GaAs Ieee Journal of Quantum Electronics. 21: 488-494. DOI: 10.1109/Jqe.1985.1072688 |
0.378 |
|
| 1985 |
Boyd IW, Moss SC, Boggess TF, Smirl AL. Temporally resolved imaging of silicon surfaces melted with intense picosecond 1‐μm laser pulses Applied Physics Letters. 46: 366-368. DOI: 10.1063/1.95633 |
0.33 |
|
| 1985 |
Smirl AL, Boggess TF, Moss SC, Boyd IW. Pulsewidth-dependence of nonlinear energy deposition and redistribution in Si, GaAs and Ge during 1 μm picosecond irradiation Journal of Luminescence. 30: 272-289. DOI: 10.1016/0022-2313(85)90059-6 |
0.361 |
|
| 1984 |
Boggess TF, Moss SC, Boyd IW, Smirl AL. Nonlinear-optical energy regulation by nonlinear refraction and absorption in silicon. Optics Letters. 9: 291-3. PMID 19721574 DOI: 10.1364/Ol.9.000291 |
0.312 |
|
| 1984 |
Moss SC, Boyd IW, Boggess TF, Smirl AL. Spatially and Temporally Resolved Reflectivity Profiles of Crystalline Silicon Irradiated by 48 Ps Pulses of One-Micron Laser Radiation Mrs Proceedings. 35: 107. DOI: 10.1557/Proc-35-107 |
0.305 |
|
| 1983 |
Soileau MJ, Williams WE, Van Stryland EW, Boggess TF, Smirl AL. Picosecond Damage Studies At 0.5 And 1 õm Optical Engineering. 22. DOI: 10.1117/12.7973138 |
0.319 |
|
| 1983 |
Smirl AL, Boggess TF, Wherrett BS, Perryman GP, Miller A. Picosecond Transient Orientational and Concentration Gratings in Germanium Ieee Journal of Quantum Electronics. 19: 690-700. DOI: 10.1109/Jqe.1983.1071920 |
0.341 |
|
| 1982 |
Smirl AL, Boggess TF, Wherrett BS, Perryman GP, Miller A. Picosecond Optically Induced Anisotropic State Filling in Semiconductors Physical Review Letters. 49: 933-936. DOI: 10.1103/Physrevlett.49.933 |
0.342 |
|
| 1982 |
Boggess TF, Smirl AL, Wherrett BS. Picosecond transient grating measurement of orientational effects in semiconductors Optics Communications. 43: 128-133. DOI: 10.1016/0030-4018(82)90106-7 |
0.383 |
|
| 1981 |
Smirl AL, Miller A, Perryman GP, Boggess TF. PICOSECOND INTERBAND SATURATION AND INTRABAND RELAXATION OF PHOTOEXCITED CARRIERS IN GERMANIUM Le Journal De Physique Colloques. 42: C7-463-C7-470. DOI: 10.1051/Jphyscol:1981756 |
0.323 |
|
| 1980 |
Smirl AL, Boggess TF, Hopf F. Generation of a forward-traveling phase-conjugate wave in germanium Optics Communications. 34: 463-468. DOI: 10.1016/0030-4018(80)90418-6 |
0.309 |
|
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