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Sankaran Jayanarayanan, Ph.D. - Publications

Affiliations: 
2004 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK. A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900. DOI: 10.1016/J.Sse.2006.04.003  0.749
2004 Ioannou DP, Zhao E, Cooper S, Zhang J, Jayanarayanan SK, Pham V, Marathe A, Ioannou DE. New insights on the hot-carrier characteristics of 55nm PD SOI MOSEETs Proceedings - Ieee International Soi Conference. 205-206. DOI: 10.1109/SOI.2005.1563589  0.455
2002 Ouyang Q, Chen XD, Jayanarayanan SK, Prins FE, Banerjee S. Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels Iccdcs 2002 - 4th Ieee International Caracas Conference On Devices, Circuits and Systems. DOI: 10.1109/ICCDCS.2002.1004030  0.578
2002 Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Materials Research Society Symposium - Proceedings. 686: 75-79.  0.548
2001 Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79. DOI: 10.1557/Proc-686-A2.8  0.643
2001 Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185  0.723
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004  0.737
2001 Chen X, Liu KC, Jayanarayanan SK, Banerjee S. Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379. DOI: 10.1063/1.1342038  0.782
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Solid-State Electronics. 45: 281-285. DOI: 10.1016/S0038-1101(01)00013-2  0.773
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Si1-xGex channel vertical PMOSFET with asymmetric Ge profile Annual Device Research Conference Digest. 30-31.  0.601
2000 Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee S. SiGe heterojunction vertical p-type metal-oxide-semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658.  0.692
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