Qiqing C. Ouyang, Ph.D. - Publications

Affiliations: 
2000 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Dehlinger G, Schaub JD, Koester SJ, Ouyang QC, Chu JO, Grill A. High-speed germanium-on-insulator photodetectors Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 304-305. DOI: 10.1109/LEOS.2005.1548000  0.88
2005 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV. Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping Ieee Electron Device Letters. 26: 817-819. DOI: 10.1109/Led.2005.858103  0.88
2005 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Jenkins KA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias Ieee Electron Device Letters. 26: 178-180. DOI: 10.1109/LED.2005.843222  0.88
2005 Koester SJ, Dehlinger G, Schaub JD, Chu JO, Ouyang QC, Grill A. Germanium-on-insulator photodetectors 2005 Ieee International Conference On Group Iv Photonics. 2005: 171-173. DOI: 10.1109/GROUP4.2005.1516442  0.88
2004 Schaub JD, Koester SJ, Dehlinger G, Ouyang QC, Guckenberger D, Yang M, Rogers D, Chu J, Grill A. High speed, lateral PIN photodiodes in silicon technologies Proceedings of Spie - the International Society For Optical Engineering. 5353: 1-11. DOI: 10.1117/12.530237  0.88
2004 Dehlinger G, Koester SJ, Schaub JD, Chu JO, Ouyang QC, Grill A. High-speed Germanium-on-SOI lateral PIN photodiodes Ieee Photonics Technology Letters. 16: 2547-2549. DOI: 10.1109/Lpt.2004.835631  0.88
2004 Koester SJ, Schaub JD, Dehlinger G, Chu JO, Ouyang QC, Grill A. High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth Device Research Conference - Conference Digest, Drc. 175-176. DOI: 10.1109/DRC.2004.1367846  0.88
2004 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping Device Research Conference - Conference Digest, Drc. 107-108. DOI: 10.1109/DRC.2004.1367806  0.88
2004 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Bedell SW, Canaperi DF, Tornello JA, Jahnes CV. SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling Proceedings - Electrochemical Society. 7: 449-458.  0.88
2004 Koester SJ, Chu JO, Saenger KL, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. High-performance SiGe MODFET technology Materials Research Society Symposium Proceedings. 809: 171-179.  0.88
2003 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Rooks MJ, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax Electronics Letters. 39: 1684-1685. DOI: 10.1049/el:20031082  0.88
2003 Singh DV, Koester SJ, Chu JO, Jenkins KA, Mooney PM, Ouyang QC, Ruiz N, Ott JA, Ralston D, Wetzel M, Asbeck PM, Saenger KL, Patel VV, Grill A. Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs Electronics Letters. 39: 570-572. DOI: 10.1049/El:20030353  0.88
2002 Chen X, Ouyang QC, Wang G, Banerjee SK. Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Ieee Transactions On Electron Devices. 49: 1962-1968. DOI: 10.1109/Ted.2002.804697  0.88
2002 Ouyang QC, Koester SJ, Chu JO, Grill A, Subbanna S, Hennan DA. A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2002: 59-62. DOI: 10.1109/SISPAD.2002.1034516  0.88
2001 Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185  0.88
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  0.88
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004  0.52
2000 Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577  0.88
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