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Qiqing C. Ouyang, Ph.D. - Publications

Affiliations: 
2000 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV. Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping Ieee Electron Device Letters. 26: 817-819. DOI: 10.1109/Led.2005.858103  0.422
2005 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Jenkins KA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias Ieee Electron Device Letters. 26: 178-180. DOI: 10.1109/LED.2005.843222  0.59
2005 Koester SJ, Dehlinger G, Schaub JD, Chu JO, Ouyang QC, Grill A. Germanium-on-insulator photodetectors 2005 Ieee International Conference On Group Iv Photonics. 2005: 171-173. DOI: 10.1109/GROUP4.2005.1516442  0.318
2004 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping Device Research Conference - Conference Digest, Drc. 107-108. DOI: 10.1109/DRC.2004.1367806  0.469
2004 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Bedell SW, Canaperi DF, Tornello JA, Jahnes CV. SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling Proceedings - Electrochemical Society. 7: 449-458.  0.576
2004 Koester SJ, Chu JO, Saenger KL, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. High-performance SiGe MODFET technology Materials Research Society Symposium Proceedings. 809: 171-179.  0.457
2003 Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Rooks MJ, Canaperi DF, Tornello JA, Jahnes CV, Steen SE. 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax Electronics Letters. 39: 1684-1685. DOI: 10.1049/el:20031082  0.532
2003 Singh DV, Koester SJ, Chu JO, Jenkins KA, Mooney PM, Ouyang QC, Ruiz N, Ott JA, Ralston D, Wetzel M, Asbeck PM, Saenger KL, Patel VV, Grill A. Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs Electronics Letters. 39: 570-572. DOI: 10.1049/El:20030353  0.517
2002 Chen X, Ouyang QC, Wang G, Banerjee SK. Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Ieee Transactions On Electron Devices. 49: 1962-1968. DOI: 10.1109/Ted.2002.804697  0.693
2002 Ouyang QC, Koester SJ, Chu JO, Grill A, Subbanna S, Hennan DA. A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2002: 59-62. DOI: 10.1109/SISPAD.2002.1034516  0.489
2001 Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185  0.713
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  0.607
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004  0.715
2000 Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577  0.523
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