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Marko J. Tadjer, Ph.D. - Publications

Affiliations: 
2010 Electrical Engineering University of Maryland, College Park, College Park, MD 
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96 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Islam Z, Haque A, Glavin NR, Xian M, Ren F, Polyakov AY, Kochkova AI, Tadjer M, Pearton SJ. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008. DOI: 10.1149/2162-8777/Ab981D  0.386
2020 Bai T, Wang Y, Feygelson TI, Tadjer MJ, Hobart KD, Hines NJ, Yates L, Graham S, Anaya J, Kuball M, Goorsky MS. Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Properties Ecs Journal of Solid State Science and Technology. 9: 053002. DOI: 10.1149/2162-8777/Ab96D8  0.356
2020 Xian M, Fares C, Ren F, Islam Z, Haque A, Tadjer M, Pearton SJ. Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 35007. DOI: 10.1149/2162-8777/Ab7B44  0.308
2020 Islam Z, Xian M, Haque A, Ren F, Tadjer M, Glavin N, Pearton S. In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061. DOI: 10.1109/Ted.2020.3000441  0.395
2020 Tadjer MJ, Freitas JA, Culbertson JC, Weber MH, Glaser ER, Mock AL, Mahadik NA, Schmieder K, Jackson E, Gallagher JC, Feigelson BN, Kuramata A. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres Journal of Physics D: Applied Physics. 53: 504002. DOI: 10.1088/1361-6463/Abb432  0.337
2020 Fares C, Xian M, Smith DJ, McCartney MR, Kneiß M, von Wenckstern H, Grundmann M, Tadjer M, Ren F, Pearton SJ. Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74 Journal of Applied Physics. 127: 105701. DOI: 10.1063/5.0002875  0.35
2020 Cheng Z, Wheeler VD, Bai T, Shi J, Tadjer MJ, Feygelson T, Hobart KD, Goorsky MS, Graham S. Integration of polycrystalline Ga2O3 on diamond for thermal management Applied Physics Letters. 116: 62105. DOI: 10.1063/1.5125637  0.432
2019 Cheng Z, Bai T, Shi J, Feng T, Wang Y, Mecklenburg M, Li C, Hobart KD, Feygelson T, Tadjer MJ, Pate BB, Foley B, Yates L, Pantelides ST, Cola BA, et al. Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy. Acs Applied Materials & Interfaces. PMID 31042348 DOI: 10.1021/Acsami.9B02234  0.365
2019 Gallagher JC, Koehler AD, Tadjer MJ, Mahadik NA, Anderson TJ, Budhathoki S, Law K, Hauser AJ, Hobart KD, Kub FJ. Demonstration of CuI as a P–N heterojunction to β-Ga2O3 Applied Physics Express. 12: 104005. DOI: 10.7567/1882-0786/Ab420E  0.349
2019 Chen Y, Yang J, Ren F, Chang C, Lin J, Pearton SJ, Tadjer MJ, Kuramata A, Liao Y. Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes Ecs Journal of Solid State Science and Technology. 8: Q3229-Q3234. DOI: 10.1149/2.0421907Jss  0.333
2019 Tadjer MJ, Lyons JL, Nepal N, Freitas JA, Koehler AD, Foster GM. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0341907Jss  0.309
2019 Anderson TJ, Luna LE, Aktas O, Foster GM, Koehler AD, Tadjer MJ, Mastro MA, Hobart KD, Odnoblyudov V, Basceri C, Kub FJ. Lateral GaN JFET Devices on Large Area Engineered Substrates Ecs Journal of Solid State Science and Technology. 8: Q226-Q229. DOI: 10.1149/2.0091912Jss  0.332
2019 Wang Y, Bai T, Li C, Tadjer MJ, Anderson TJ, Hite JK, Mastro MA, Eddy CR, Hobart KD, Feigelson BN, Goorsky MS. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices Ecs Journal of Solid State Science and Technology. 8: P70-P76. DOI: 10.1149/2.0011902Jss  0.364
2019 Mastro MA, Hite JK, Eddy CR, Tadjer MJ, Pearton SJ, Ren F, Kim J. Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices International Journal of High Speed Electronics and Systems. 28: 1940007. DOI: 10.1142/S012915641940007X  0.373
2019 Xian M, Elhassani R, Fares C, Ren F, Tadjer M, Pearton SJ. Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 61205. DOI: 10.1116/1.5127511  0.441
2019 Xian M, Fares C, Ren F, Gila BP, Chen Y, Liao Y, Tadjer M, Pearton SJ. Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201. DOI: 10.1116/1.5125006  0.432
2019 Sharma R, Law ME, Xian M, Tadjer M, Anber EA, Foley D, Lang AC, Hart JL, Nathaniel J, Taheri ML, Ren F, Pearton SJ, Kuramata A. Diffusion of implanted Ge and Sn in β-Ga2O3 Journal of Vacuum Science & Technology B. 37: 051204. DOI: 10.1116/1.5118001  0.33
2019 Allen N, Xiao M, Yan X, Sasaki K, Tadjer MJ, Ma J, Zhang R, Wang H, Zhang Y. Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2 Ieee Electron Device Letters. 40: 1399-1402. DOI: 10.1109/Led.2019.2931697  0.407
2019 Tadjer MJ, Anderson TJ, Ancona MG, Raad PE, Komarov P, Bai T, Gallagher JC, Koehler AD, Goorsky MS, Francis DA, Hobart KD, Kub FJ. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging Ieee Electron Device Letters. 40: 881-884. DOI: 10.1109/Led.2019.2909289  0.41
2019 Noh J, Ye PD, Alajlouni S, Tadjer MJ, Culbertson JC, Bae H, Si M, Zhou H, Bermel PA, Shakouri A. High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate Ieee Journal of the Electron Devices Society. 7: 914-918. DOI: 10.1109/Jeds.2019.2933369  0.369
2019 Sharma R, Law ME, Fares C, Tadjer M, Ren F, Kuramata A, Pearton SJ. The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 Aip Advances. 9: 085111. DOI: 10.1063/1.5115149  0.328
2019 Yang J, Xian M, Carey P, Fares C, Partain J, Ren F, Tadjer M, Anber E, Foley D, Lang A, Hart J, Nathaniel J, Taheri ML, Pearton SJ, Kuramata A. Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays Applied Physics Letters. 114: 232106. DOI: 10.1063/1.5100256  0.377
2019 Cheng Z, Yates L, Shi J, Tadjer MJ, Hobart KD, Graham S. Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces Apl Materials. 7: 31118. DOI: 10.1063/1.5089559  0.41
2019 Mahadik NA, Tadjer MJ, Bonanno PL, Hobart KD, Stahlbush RE, Anderson TJ, Kuramata A. High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography Apl Materials. 7: 22513. DOI: 10.1063/1.5051633  0.323
2019 Kim J, Tadjer MJ, Mastro MA, Kim J. Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment Journal of Materials Chemistry C. 7: 8855-8860. DOI: 10.1039/C9Tc02468A  0.325
2018 Kim J, Mastro MA, Tadjer MJ, Kim J. Heterostructure WSe-GaO junction field-effect transistor for low-dimensional high-power electronics. Acs Applied Materials & Interfaces. PMID 30092634 DOI: 10.1021/Acsami.8B07030  0.421
2018 Myers-Ward RL, Hobart KD, Daniels KM, Giles AJ, Tadjer MJ, Luna LE, Kub FJ, Pavunny SP, Carter SG, Banks HB, Glaser ER, Klein PB, Feygelson BN, Gaskill DK. Processing of Cavities in SiC Material for Quantum Technologies Materials Science Forum. 924: 905-908. DOI: 10.4028/Www.Scientific.Net/Msf.924.905  0.311
2018 Yang J, Ren F, Tadjer M, Pearton SJ, Kuramata A. 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers Ecs Journal of Solid State Science and Technology. 7: Q92-Q96. DOI: 10.1149/2.0241805Jss  0.301
2018 Yang J, Sparks Z, Ren F, Pearton SJ, Tadjer M. Effect of surface treatments on electrical properties of β-Ga2O3 Journal of Vacuum Science & Technology B. 36: 061201. DOI: 10.1116/1.5052229  0.33
2018 Tadjer MJ, Raad PE, Komarov PL, Hobart KD, Feygelson TI, Koehler AD, Anderson TJ, Nath A, Pate B, Kub FJ. Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance Ieee Journal of the Electron Devices Society. 6: 922-930. DOI: 10.1109/Jeds.2018.2860792  0.387
2018 Pearton SJ, Ren F, Tadjer M, Kim J. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS Journal of Applied Physics. 124: 220901. DOI: 10.1063/1.5062841  0.406
2018 Tadjer MJ, Koehler AD, JAF, Gallagher JC, Specht MC, Glaser ER, Hobart KD, Anderson TJ, Kub FJ, Thieu QT, Sasaki K, Wakimoto D, Goto K, Watanabe S, Kuramata A. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen Applied Physics Letters. 113: 192102. DOI: 10.1063/1.5045601  0.41
2018 Yang J, Ren F, Tadjer M, Pearton SJ, Kuramata A. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit Aip Advances. 8: 055026. DOI: 10.1063/1.5034444  0.377
2018 Pearton SJ, Yang J, Cary PH, Ren F, Kim J, Tadjer MJ, Mastro MA. A review of Ga2O3materials, processing, and devices Applied Physics Reviews. 5: 011301. DOI: 10.1063/1.5006941  0.409
2018 Shahin DI, Tadjer MJ, Wheeler VD, Koehler AD, Anderson TJ, CRE, Christou A. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3 Applied Physics Letters. 112: 42107. DOI: 10.1063/1.5006276  0.42
2018 Freitas J, Culbertson J, Mahadik N, Tadjer M, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M. Homoepitaxial HVPE GaN: A potential substrate for high performance devices Journal of Crystal Growth. 500: 104-110. DOI: 10.1016/J.Jcrysgro.2018.08.007  0.417
2017 Kim J, Mastro MA, Tadjer MJ, Kim J. Quasi-two-dimensional h-BN/β-Ga2O3 heterostructure metal-insulator-semiconductor field-effect transistor. Acs Applied Materials & Interfaces. PMID 28560867 DOI: 10.1021/Acsami.7B04374  0.414
2017 Anderson TJ, Koehler AD, Tadjer MJ, Hite JK, Nath A, Mahadik NA, Aktas O, Odnoblyudov V, Basceri C, Hobart KD, Kub FJ. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates Applied Physics Express. 10: 126501. DOI: 10.7567/Apex.10.126501  0.418
2017 Koehler AD, Anderson TJ, Khachatrian A, Nath A, Tadjer MJ, Buchner SP, Hobart KD, Kub FJ. High Voltage GaN Lateral Photoconductive Semiconductor Switches Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0231711Jss  0.413
2017 Wheeler VD, Shahin DI, Tadjer MJ, Eddy CR. Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3 Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0131702Jss  0.326
2017 Koehler AD, Anderson TJ, Tadjer MJ, Nath A, Feigelson BN, Shahin DI, Hobart KD, Kub FJ. Vertical GaN Junction Barrier Schottky Diodes Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0041701Jss  0.349
2017 Zhang Y, Liu Z, Tadjer MJ, Sun M, Piedra D, Hatem C, Anderson TJ, Luna LE, Nath A, Koehler AD, Okumura H, Hu J, Zhang X, Gao X, Feigelson BN, et al. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Ieee Electron Device Letters. 38: 1097-1100. DOI: 10.1109/Led.2017.2720689  0.343
2017 Squires B, Hancock BL, Nazari M, Anderson J, Hobart KD, Feygelson TI, Tadjer MJ, Pate BB, Anderson TJ, Piner EL, Holtz MW. Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping Journal of Physics D. 50. DOI: 10.1088/1361-6463/Aa6F44  0.361
2017 Luna LE, Tadjer MJ, Anderson TJ, Imhoff EA, Hobart KD, Kub FJ. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments Journal of Micromechanics and Microengineering. 27: 95004. DOI: 10.1088/1361-6439/Aa7C68  0.305
2017 Nazari M, Hancock BL, Anderson J, Hobart KD, Feygelson TI, Tadjer MJ, Pate BB, Anderson TJ, Piner EL, Holtz MW. Optical characterization and thermal properties of CVD diamond films for integration with power electronics Solid-State Electronics. 136: 12-17. DOI: 10.1016/J.Sse.2017.06.025  0.381
2017 Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ. Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Solid-State Electronics. 136: 30-35. DOI: 10.1016/J.Sse.2017.06.018  0.373
2017 Anaya J, Bai T, Wang Y, Li C, Goorsky M, Bougher TL, Yates L, Cheng Z, Graham S, Hobart KD, Feygelson TI, Tadjer MJ, Anderson TJ, Pate BB, Kuball M. Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond Acta Materialia. 139: 215-225. DOI: 10.1016/J.Actamat.2017.08.007  0.303
2016 Anderson TJ, Wheeler VD, Shahin DI, Tadjer MJ, Koehler AD, Hobart KD, Christou A, Kub FJ, Eddy CR. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition Applied Physics Express. 9: 71003. DOI: 10.7567/Apex.9.071003  0.424
2016 Mahadik NA, Stahlbush RE, Imhoff EA, Tadjer MJ, Ruland GE, Affouda CA. Mitigation of BPD by pre-epigrowth high temperature substrate annealing Materials Science Forum. 858: 233-236. DOI: 10.4028/Www.Scientific.Net/Msf.858.233  0.362
2016 Tadjer MJ, Feigelson BN, Greenlee JD, Freitas JA, Anderson TJ, Hite JK, Ruppalt L, Eddy CR, Hobart KD, Kub FJ. Selective p-type doping of GaN:Si by Mg ion implantation and multicycle rapid thermal annealing Ecs Journal of Solid State Science and Technology. 5: P124-P127. DOI: 10.1149/2.0371602Jss  0.303
2016 Anderson TJ, Koehler AD, Freitas JA, Weaver BD, Greenlee JD, Tadjer MJ, Imhoff EA, Hobart KD, Kub FJ. Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0281612Jss  0.421
2016 Shahin DI, Anderson TJ, Wheeler VD, Tadjer MJ, Koehler AD, Hobart KD, Eddy CR, Kub FJ, Christou A. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0211607Jss  0.434
2016 Tadjer MJ, Mahadik NA, Wheeler VD, Glaser ER, Ruppalt L, Koehler AD, Hobart KD, Eddy CR, Kub FJ. Communication-A (001) β-Ga2O3 MOSFET with +2.9 v threshold voltage and HfO2 gate dielectric Ecs Journal of Solid State Science and Technology. 5: P468-P470. DOI: 10.1149/2.0061609Jss  0.386
2016 Koehler AD, Anderson TJ, Tadjer MJ, Weaver BD, Greenlee JD, Shahin DI, Hobart KD, Kub FJ. Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs Ieee Electron Device Letters. 37: 545-548. DOI: 10.1109/Led.2016.2537050  0.361
2016 Anderson TJ, Tadjer MJ, Hite JK, Greenlee JD, Koehler AD, Hobart KD, Kub FJ. Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates Ieee Electron Device Letters. 37: 28-30. DOI: 10.1109/Led.2015.2502221  0.452
2016 Rafique S, Han L, Neal AT, Mou S, Tadjer MJ, French RH, Zhao H. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4963820  0.413
2016 Rafique S, Han L, Tadjer MJ, Freitas JA, Mahadik NA, Zhao H. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition Applied Physics Letters. 108. DOI: 10.1063/1.4948944  0.367
2016 Tadjer MJ, Mastro MA, Mahadik NA, Currie M, Wheeler VD, Freitas JA, Greenlee JD, Hite JK, Hobart KD, Eddy CR, Kub FJ. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-4346-3  0.399
2016 Tadjer MJ, Anderson TJ, Feygelson TI, Hobart KD, Hite JK, Koehler AD, Wheeler VD, Pate BB, Eddy CR, Kub FJ. Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process Physica Status Solidi (a) Applications and Materials Science. 213: 893-897. DOI: 10.1002/Pssa.201532570  0.432
2015 Johnson SD, Newman HS, Glaser ER, Cheng SF, Tadjer MJ, Kub FJ, Eddy CR. Aerosol deposition of yttrium iron garnet for fabrication of ferrite-integrated on-chip inductors Ieee Transactions On Magnetics. 51. DOI: 10.1109/Tmag.2014.2369376  0.322
2015 Martin-Horcajo S, Wang A, Bosca A, Romero MF, Tadjer MJ, Koehler AD, Anderson TJ, Calle F. Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/3/035015  0.406
2015 Wang A, Martin-Horcajo S, Tadjer MJ, Calle F. Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/1/015010  0.402
2015 Shahin DI, Anderson TJ, Feygelson TI, Pate BB, Wheeler VD, Greenlee JD, Hite JK, Tadjer MJ, Christou A, Hobart KD. Thermal etching of nanocrystalline diamond films Diamond and Related Materials. 59: 116-121. DOI: 10.1016/J.Diamond.2015.09.017  0.342
2014 Mahadik NA, Stahlbush RE, Nath A, Tadjer MJ, Imhoff EA, Feygelson BN, Nipoti R. Post-growth reduction of basal plane dislocations by high temperature annealing in 4H-SiC epilayers Materials Science Forum. 778: 324-327. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.324  0.333
2014 Tadjer MJ, Hobart KD, Anderson TJ, Feygelson TI, Myers-Ward RL, Koehler AD, Calle F, Eddy CR, Gaskill DK, Pate BB, Kub FJ. Thermionic-field emission barrier between nanocrystalline diamond and epitaxial 4H-SiC Ieee Electron Device Letters. 35: 1173-1175. DOI: 10.1109/Led.2014.2364596  0.398
2014 Koehler AD, Specht P, Anderson TJ, Weaver BD, Greenlee JD, Tadjer MJ, Porter M, Wade M, Dubon OC, Hobart KD, Weatherford TR, Kub FJ. Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs Ieee Electron Device Letters. 35: 1194-1196. DOI: 10.1109/Led.2014.2363433  0.349
2014 Meyer DJ, Feygelson TI, Anderson TJ, Roussos JA, Tadjer MJ, Downey BP, Katzer DS, Pate BB, Ancona MG, Koehler AD, Hobart KD, Eddy CR. Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors Ieee Electron Device Letters. 35: 1013-1015. DOI: 10.1109/Led.2014.2345631  0.391
2014 Martin-Horcajo S, Wang A, Romero MF, Tadjer MJ, Koehler AD, Anderson TJ, Calle F. Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115013  0.374
2014 Anderson TJ, Feigelson BN, Kub FJ, Tadjer MJ, Hobart KD, Mastro MA, Hite JK, Eddy CR. Activation of Mg implanted in GaN by multicycle rapid thermal annealing Electronics Letters. 50: 197-198. DOI: 10.1049/El.2013.3214  0.336
2013 Tadjer MJ, Constant A, Godignon P, Martin-Horcajo S, Boscá A, Calle F, Berthou M, Millán J. Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias- temperature stress Materials Science Forum. 740: 553-556. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.553  0.336
2013 Martin-Horcajo S, Wang A, Romero MF, Tadjer MJ, Calle F. Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 60: 4105-4111. DOI: 10.1109/Ted.2013.2284851  0.362
2013 Wang A, Tadjer MJ, Anderson TJ, Baranyai R, Pomeroy JW, Feygelson TI, Hobart KD, Pate BB, Calle F, Kuball M. Impact of intrinsic stress in diamond capping layers on the electrical behavior of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 60: 3149-3156. DOI: 10.1109/Ted.2013.2275031  0.346
2013 Anderson TJ, Koehler AD, Hobart KD, Tadjer MJ, Feygelson TI, Hite JK, Pate BB, Kub FJ, Eddy CR. Nanocrystalline diamond-gated AlGaN/GaN HEMT Ieee Electron Device Letters. 34: 1382-1384. DOI: 10.1109/Led.2013.2282968  0.45
2013 Koehler AD, Nepal N, Anderson TJ, Tadjer MJ, Hobart KD, Eddy CR, Kub FJ. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation Ieee Electron Device Letters. 34: 1115-1117. DOI: 10.1109/Led.2013.2274429  0.421
2013 Wang A, Tadjer MJ, Calle F. Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/5/055010  0.401
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  0.393
2012 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Caldwell JD, Eddy CR, Kub FJ, Butler JE, Pate B, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films Ieee Electron Device Letters. 33: 23-25. DOI: 10.1109/Led.2011.2171031  0.622
2012 Tadjer MJ, Anderson TJ, Hobart KD, Nyakiti LO, Wheeler VD, Myers-Ward RL, Gaskill DK, Eddy CR, Kub FJ, Calle F. Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures Applied Physics Letters. 100. DOI: 10.1063/1.4712621  0.352
2010 Caldwell JD, Anderson TJ, Culbertson JC, Jernigan GG, Hobart KD, Kub FJ, Tadjer MJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. Acs Nano. 4: 1108-14. PMID 20099904 DOI: 10.1021/Nn901585P  0.392
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Butler JE, Kub FJ. Comparative study of ohmic contact metallizations to nanocrystalline diamond films Materials Science Forum. 645: 733-735. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.733  0.351
2010 Tadjer MJ, Hobart KD, Stahlbush RE, Mcmarr PJ, Hughes HL, Kub FJ, Haney SK. Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC MOS devices using gamma ray irradiation Materials Science Forum. 645: 469-472. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.469  0.351
2010 Tadjer MJ, Hobart KD, Mastro MA, Anderson TJ, Imhoff EA, Kub FJ, Hite JK, Eddy CR. Effect of temperature and Al concentration on the electrical performance of GaN and Al0.2Ga0.8N accumulation-mode FET devices Materials Science Forum. 645: 1215-1218. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1215  0.413
2010 Caldwel JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Tadjer MJ, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Epitaxial graphene: Dry transfer and materials characterization Proceedings of Spie - the International Society For Optical Engineering. 7761. DOI: 10.1117/12.860676  0.381
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Mastro MA, Caldwell JD, Hite JK, Eddy CR, Kub FJ, Butler JE, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2010.5551873  0.495
2010 Tadjer MJ, Feygelson TI, Hobart KD, Caldwell JD, Anderson TJ, Butler JE, Eddy CR, Gaskill DK, Lew KK, Vanmil BL, Myers-Ward RL, Kub FJ, Sollenberger G, Brillson L. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC Applied Physics Letters. 97. DOI: 10.1063/1.3515858  0.384
2010 Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ. Thick homoepitaxial GaN with low carrier concentration for high blocking voltage Journal of Crystal Growth. 312: 2616-2619. DOI: 10.1016/J.Jcrysgro.2010.04.022  0.42
2010 Tadjer MJ, Anderson TJ, Hobart KD, Mastro MA, Hite JK, Caldwell JD, Picard YN, Kub FJ, Eddy CR. Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and Ex situ deposited SiN x layers Journal of Electronic Materials. 39: 2452-2458. DOI: 10.1007/S11664-010-1343-9  0.387
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Characterization of recessed-gate algan/GaN HEMTs as a function of etch depth Journal of Electronic Materials. 39: 478-481. DOI: 10.1007/S11664-010-1111-X  0.425
2010 Tadjer MJ, Stahlbush RE, Hobart KD, Mcmarr PJ, Hughes HL, Imhoff EA, Kub FJ, Haney SK, Agarwal A. Spatial localization of carrier traps in 4H-SiC MOSFET devices using thermally stimulated current Journal of Electronic Materials. 39: 517-525. DOI: 10.1007/S11664-009-1058-Y  0.391
2009 Caldwell JD, Stahlbush RE, Glembocki OJ, Hobart KD, Liu KX, Tadjer MJ. Temperature dependence of shockley stacking fault expansion and contraction in 4H-SiC p-i-n diodes Materials Science Forum. 600: 273-278. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.273  0.364
2009 Tadjer MJ, Hobart KD, Imhoff EA, Kub FJ. Temperature and time dependent threshold voltage instability in 4h-sic power dmosfet devices Materials Science Forum. 600: 1147-1150. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1147  0.374
2009 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching Ieee Electron Device Letters. 30: 1251-1253. DOI: 10.1109/Led.2009.2033083  0.417
2009 Caldwell JD, Stahlbush RE, Imhoff EA, Hobart KD, Tadjer MJ, Zhang Q, Agarwal A. Recombination-induced stacking fault degradation of 4H-SiC merged- PiN -Schottky diodes Journal of Applied Physics. 106. DOI: 10.1063/1.3194323  0.363
2008 Caldwell JD, Stahlbush RE, Imhoff EA, Glembocki OJ, Hobart KD, Tadjer MJ, Zhang Q, Das M, Agarwal A. Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D10-04  0.375
2007 Tadjer MJ, Hobart KD, Caldwell JD, Butler JE, Liu KX, Eddy CR, Gaskill DK, Lew KK, Vanmil BL, Myers-Ward RL, Ancona MG, Kub FJ, Feygelson TI. Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2800886  0.399
2007 Caldwell JD, Liu KX, Tadjer MJ, Glembocki OJ, Stahlbush RE, Hobart KD, Kub F. Thermal annealing and propagation of Shockley stacking faults in 4H-SiC PiN diodes Journal of Electronic Materials. 36: 318-323. DOI: 10.1007/S11664-006-0038-8  0.334
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