| Year |
Citation |
Score |
| 2023 |
Sharma S, Myers-Ward RL, Gaskill KD, Chatzakis I. Ultrafast hot-carrier cooling in quasi freestanding bilayer graphene with hydrogen intercalated atoms. Nanoscale Advances. 5: 485-492. PMID 36756263 DOI: 10.1039/d2na00678b |
0.337 |
|
| 2021 |
Qiao K, Liu Y, Kim C, Molnar RJ, Osadchy T, Li W, Sun X, Li H, Myers-Ward RL, Lee D, Subramanian S, Kim H, Lu K, Robinson JA, Kong W, et al. Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes. Nano Letters. PMID 33900785 DOI: 10.1021/acs.nanolett.1c00673 |
0.336 |
|
| 2020 |
Shriver-Lake LC, Myers-Ward RL, Dean SN, Erickson JS, Stenger DA, Trammell SA. Multilayer Epitaxial Graphene on Silicon Carbide: A Stable Working Electrode for Seawater Samples Spiked with Environmental Contaminants. Sensors (Basel, Switzerland). 20. PMID 32708477 DOI: 10.3390/S20144006 |
0.364 |
|
| 2020 |
Kotsakidis JC, Grubišić-Čabo A, Yin Y, Tadich A, Myers-Ward RL, DeJarld M, Pavunny SP, Currie M, Daniels KM, Liu C, Edmonds MT, Medhekar NV, Gaskill DK, Vázquez de Parga AL, Fuhrer MS. Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer–SiC(0001) Interface Chemistry of Materials. 32: 6464-6482. DOI: 10.1021/Acs.Chemmater.0C01729 |
0.369 |
|
| 2019 |
Ulstrup S, Giusca CE, Miwa JA, Sanders CE, Browning A, Dudin P, Cacho C, Kazakova O, Gaskill DK, Myers-Ward RL, Zhang T, Terrones M, Hofmann P. Nanoscale mapping of quasiparticle band alignment. Nature Communications. 10: 3283. PMID 31337765 DOI: 10.1038/S41467-019-11253-2 |
0.414 |
|
| 2019 |
Pennachio DJ, Ornelas-Skarin CC, Wilson NS, Rosenberg SG, Daniels KM, Myers-Ward RL, Gaskill DK, Eddy CR, Palmstrøm CJ. Tailoring commensurability of hBN/graphene heterostructures using substrate morphology and epitaxial growth conditions Journal of Vacuum Science & Technology A. 37: 051503. DOI: 10.1116/1.5110524 |
0.444 |
|
| 2019 |
Jadidi MM, Daniels KM, Myers-Ward RL, Gaskill DK, König-Otto JC, Winnerl S, Sushkov AB, Drew HD, Murphy TE, Mittendorff M. Optical Control of Plasmonic Hot Carriers in Graphene Acs Photonics. 6: 302-307. DOI: 10.1021/Acsphotonics.8B01499 |
0.391 |
|
| 2019 |
Pavunny SP, Myers-Ward RL, Daniels KM, Shi W, Sridhara K, DeJarld MT, Boyd AK, Kub FJ, Kohl PA, Carter SG, Gaskill DK. On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers Electrochimica Acta. 323: 134778. DOI: 10.1016/J.Electacta.2019.134778 |
0.385 |
|
| 2019 |
El Fatimy A, Han P, Quirk N, St. Marie L, Dejarld MT, Myers-Ward RL, Daniels K, Pavunny S, Gaskill DK, Aytac Y, Murphy TE, Barbara P. Effect of defect-induced cooling on graphene hot-electron bolometers Carbon. 154: 497-502. DOI: 10.1016/J.Carbon.2019.08.019 |
0.407 |
|
| 2018 |
DeJarld M, Campbell PM, Friedman AL, Currie M, Myers-Ward RL, Boyd AK, Rosenberg SG, Pavunny SP, Daniels KM, Gaskill DK. Surface potential and thin film quality of low work function metals on epitaxial graphene. Scientific Reports. 8: 16487. PMID 30405192 DOI: 10.1038/S41598-018-34595-1 |
0.391 |
|
| 2018 |
Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, et al. Polarity governs atomic interaction through two-dimensional materials. Nature Materials. PMID 30297812 DOI: 10.1038/S41563-018-0176-4 |
0.36 |
|
| 2018 |
Myers-Ward RL, Hobart KD, Daniels KM, Giles AJ, Tadjer MJ, Luna LE, Kub FJ, Pavunny SP, Carter SG, Banks HB, Glaser ER, Klein PB, Feygelson BN, Gaskill DK. Processing of Cavities in SiC Material for Quantum Technologies Materials Science Forum. 924: 905-908. DOI: 10.4028/Www.Scientific.Net/Msf.924.905 |
0.351 |
|
| 2018 |
El Fatimy A, Nath A, Kong BD, Boyd AK, Myers-Ward RL, Daniels KM, Jadidi MM, Murphy TE, Gaskill DK, Barbara P. Ultra-broadband photodetectors based on epitaxial graphene quantum dots Nanophotonics. 7: 735-740. DOI: 10.1515/Nanoph-2017-0100 |
0.344 |
|
| 2017 |
Nath A, Kong BD, Koehler AD, Anderson VR, Wheeler VD, Daniels KM, Boyd AK, Cleveland ER, Myers-Ward RL, Gaskill DK, Hobart KD, Kub FJ, Jernigan GG. Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer Applied Physics Letters. 110: 013106. DOI: 10.1063/1.4973200 |
0.329 |
|
| 2017 |
Jiao C, Ahyi AC, Dhar S, Morisette D, Myers-Ward R. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides Journal of Electronic Materials. 46: 2296-2300. DOI: 10.1007/S11664-016-5262-2 |
0.342 |
|
| 2016 |
Trammell SA, Hernández SC, Myers-Ward RL, Zabetakis D, Stenger DA, Gaskill DK, Walton SG. Plasma-Modified, Epitaxial Fabricated Graphene on SiC for the Electrochemical Detection of TNT. Sensors (Basel, Switzerland). 16. PMID 27529251 DOI: 10.3390/S16081281 |
0.423 |
|
| 2016 |
Jadidi MM, Sushkov AB, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Fuhrer MS, Drew HD, Murphy TE. Correction to Tunable Terahertz Hybrid Metal-Graphene Plasmons. Nano Letters. PMID 26906255 DOI: 10.1021/Acs.Nanolett.6B00640 |
0.348 |
|
| 2016 |
El Fatimy A, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Barbara P. Epitaxial graphene quantum dots for high-performance terahertz bolometers. Nature Nanotechnology. PMID 26727199 DOI: 10.1038/Nnano.2015.303 |
0.39 |
|
| 2016 |
Nath A, Currie M, Boyd AK, Wheeler VD, Koehler AD, Tadjer MJ, Robinson ZR, Sridhara K, Hernandez SC, Wollmershauser JA, Robinson JT, Myers-Ward RL, Rao MV, Gaskill DK. In search of quantum-limited contact resistance: Understanding the intrinsic and extrinsic effects on the graphene-metal interface 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/025013 |
0.321 |
|
| 2016 |
Panchal V, Giusca CE, Lartsev A, Martin NA, Cassidy N, Myers-Ward RL, Gaskill DK, Kazakova O. Atmospheric doping effects in epitaxial graphene: Correlation of local and global electrical studies 2d Materials. 3. DOI: 10.1088/2053-1583/3/1/015006 |
0.387 |
|
| 2015 |
Jadidi MM, Sushkov AB, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Fuhrer MS, Drew HD, Murphy TE. Tunable Terahertz Hybrid Metal-Graphene Plasmons. Nano Letters. 15: 7099-104. PMID 26397718 DOI: 10.1021/Acs.Nanolett.5B03191 |
0.388 |
|
| 2015 |
Munz M, Giusca CE, Myers-Ward RL, Gaskill DK, Kazakova O. Thickness-Dependent Hydrophobicity of Epitaxial Graphene. Acs Nano. 9: 8401-11. PMID 26218503 DOI: 10.1021/Acsnano.5B03220 |
0.407 |
|
| 2015 |
Cai X, Sushkov AB, Jadidi MM, Nyakiti LO, Myers-Ward RL, Gaskill DK, Murphy TE, Fuhrer MS, Drew HD. Plasmon-Enhanced Terahertz Photodetection in Graphene. Nano Letters. 15: 4295-302. PMID 25871698 DOI: 10.1021/Acs.Nanolett.5B00137 |
0.358 |
|
| 2015 |
Huang J, Alexander-Webber JA, Janssen TJ, Tzalenchuk A, Yager T, Lara-Avila S, Kubatkin S, Myers-Ward RL, Wheeler VD, Gaskill DK, Nicholas RJ. Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 164202. PMID 25835029 DOI: 10.1088/0953-8984/27/16/164202 |
0.316 |
|
| 2015 |
Anderson TJ, Hobart KD, Greenlee JD, Shahin DI, Koehler AD, Tadjer MJ, Imhoff EA, Myers-Ward RL, Christou A, Kub FJ. Ultraviolet detector based on graphene/SiC heterojunction Applied Physics Express. 8. DOI: 10.7567/Apex.8.041301 |
0.447 |
|
| 2015 |
Robinson ZR, Jernigan GG, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Wheeler VD, Myers-Ward RL, Kurt Gaskill D, Eddy CR. Graphene growth on SiC(000-1): Optimization of surface preparation and growth conditions Proceedings of Spie - the International Society For Optical Engineering. 9552. DOI: 10.1117/12.2191616 |
0.471 |
|
| 2015 |
Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155 |
0.437 |
|
| 2015 |
Robinson ZR, Jernigan GG, Currie M, Hite JK, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Rao MV, Wheeler VD, Myers-Ward RL, Wollmershauser JA, Feigelson BN, Eddy CR, Gaskill DK. Challenges to graphene growth on SiC(0001): Substrate effects, hydrogen etching and growth ambient Carbon. 81: 73-82. DOI: 10.1016/J.Carbon.2014.09.025 |
0.503 |
|
| 2015 |
Giusca CE, Panchal V, Munz M, Wheeler VD, Nyakiti LO, Myers-Ward RL, Gaskill DK, Kazakova O. Water Affinity to Epitaxial Graphene: The Impact of Layer Thickness Advanced Materials Interfaces. 2. DOI: 10.1002/Admi.201500252 |
0.394 |
|
| 2014 |
Cai X, Sushkov AB, Suess RJ, Jadidi MM, Jenkins GS, Nyakiti LO, Myers-Ward RL, Li S, Yan J, Gaskill DK, Murphy TE, Drew HD, Fuhrer MS. Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene. Nature Nanotechnology. 9: 814-9. PMID 25194945 DOI: 10.1038/Nnano.2014.182 |
0.397 |
|
| 2014 |
Hwang WS, Tahy K, Zhao P, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Kurt Gaskill D, Xing H, Seabaugh A, Jena D. Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4861379 |
0.437 |
|
| 2014 |
Tadjer MJ, Hobart KD, Anderson TJ, Feygelson TI, Myers-Ward RL, Koehler AD, Calle F, Eddy CR, Gaskill DK, Pate BB, Kub FJ. Thermionic-field emission barrier between nanocrystalline diamond and epitaxial 4H-SiC Ieee Electron Device Letters. 35: 1173-1175. DOI: 10.1109/Led.2014.2364596 |
0.375 |
|
| 2014 |
Neek-Amal M, Xu P, Qi D, Thibado PM, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Peeters FM. Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.064101 |
0.391 |
|
| 2014 |
Nath A, Koehler AD, Jernigan GG, Wheeler VD, Hite JK, Hernández SC, Robinson ZR, Garces NY, Myers-Ward RL, Eddy CR, Gaskill DK, Rao MV. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process Applied Physics Letters. 104. DOI: 10.1063/1.4880937 |
0.314 |
|
| 2014 |
Tadjer MJ, Anderson TJ, Myers-Ward RL, Wheeler VD, Nyakiti LO, Robinson Z, Eddy CR, Gaskill DK, Koehler AD, Hobart KD, Kub FJ. Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC Applied Physics Letters. 104. DOI: 10.1063/1.4866024 |
0.483 |
|
| 2014 |
Abadier M, Myers-Ward RL, Song H, Kurt Gaskill D, Eddy CR, Sudarshan TS, Picard YN, Skowronski M. Site specific TEM specimen preparation for characterization of extended defects in 4H-SiC epilayers Microscopy and Microanalysis. 20: 344-345. DOI: 10.1017/S1431927614003444 |
0.394 |
|
| 2014 |
Hernández SC, Wheeler VD, Osofsky MS, Jernigan GG, Nagareddy VK, Nath A, Lock EH, Nyakiti LO, Myers-Ward RL, Sridhara K, Horsfall AB, Eddy CR, Gaskill DK, Walton SG. Plasma-based chemical modification of epitaxial graphene with oxygen functionalities Surface and Coatings Technology. 241: 8-12. DOI: 10.1016/J.Surfcoat.2013.11.015 |
0.433 |
|
| 2014 |
Xu P, Qi D, Schoelz JK, Thompson J, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK, Neek-Amal M, Peeters FM. Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC Carbon. DOI: 10.1016/J.Carbon.2014.08.028 |
0.315 |
|
| 2013 |
Ellis CT, Stier AV, Kim MH, Tischler JG, Glaser ER, Myers-Ward RL, Tedesco JL, Eddy CR, Gaskill DK, Cerne J. Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect. Scientific Reports. 3: 3143. PMID 24189548 DOI: 10.1038/Srep03143 |
0.431 |
|
| 2013 |
Xu P, Ackerman ML, Barber SD, Schoelz JK, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Graphene manipulation on 4H-SiC(0001) using scanning tunneling microscopy Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.035104 |
0.457 |
|
| 2013 |
Nepal N, Wheeler VD, Anderson TJ, Kub FJ, Mastro MA, Myers-Ward RL, Qadri SB, Freitas JA, Hernandez SC, Nyakiti LO, Walton SG, Gaskill K, Eddy CR. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices Applied Physics Express. 6. DOI: 10.7567/Apex.6.061003 |
0.492 |
|
| 2013 |
Nagareddy VK, Hernández SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB. High temperature stability of oxygen functionalized epitaxial graphene/metal contact interfaces Materials Science Forum. 740: 145-148. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.145 |
0.355 |
|
| 2013 |
Xu P, Barber SD, Kevin Schoelz J, Ackerman ML, Qi D, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Kurt Gaskill D. Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4803137 |
0.479 |
|
| 2013 |
Nagareddy VK, Chan HK, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB. Improved chemical detection and ultra-fast recovery using oxygen functionalized epitaxial graphene sensors Ieee Sensors Journal. 13: 2810-2817. DOI: 10.1109/Jsen.2013.2259154 |
0.313 |
|
| 2013 |
Nagareddy VK, Chan HK, Hernández SC, Wheeler VD, Myers-Ward RL, Nyakiti LO, Eddy CR, Walton SG, Goss JP, Wright NG, Gaskill DK, Horsfall AB. Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001) Applied Physics Letters. 102. DOI: 10.1063/1.4803511 |
0.324 |
|
| 2013 |
Xu P, Ackerman ML, Barber SD, Schoelz JK, Thibado PM, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface Surface Science. 617: 113-117. DOI: 10.1016/J.Susc.2013.06.012 |
0.35 |
|
| 2012 |
Nyakiti LO, Myers-Ward RL, Wheeler VD, Imhoff EA, Bezares FJ, Chun H, Caldwell JD, Friedman AL, Matis BR, Baldwin JW, Campbell PM, Culbertson JC, Eddy CR, Jernigan GG, Gaskill DK. Bilayer graphene grown on 4H-SiC (0001) step-free mesas. Nano Letters. 12: 1749-56. PMID 22352833 DOI: 10.1021/Nl203353F |
0.478 |
|
| 2012 |
Nagareddy VK, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. Temperature dependent chemical sensitivity of epitaxial graphene Materials Science Forum. 717: 691-694. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.691 |
0.389 |
|
| 2012 |
Walton SG, Hernández SC, Baraket M, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Gaskill DK. Plasma-Based Chemical Modification of Epitaxial Graphene Materials Science Forum. 657-660. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.657 |
0.397 |
|
| 2012 |
Anderson TJ, Hobart KD, Nyakiti LO, Wheeler VD, Myers-Ward RL, Caldwell JD, Bezares FJ, Gaskill DK, Eddy CR, Kub FJ, Jernigan GG, Tadjer MJ, Imhoff EA. Electrical characterization of the graphene-SiC heterojunction Materials Science Forum. 717: 641-644. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.641 |
0.441 |
|
| 2012 |
Currie M, Anderson T, Wheeler V, Nyakiti LO, Garces NY, Myers-Ward RL, Eddy CR, Kub FJ, Gaskill DK. Mode-locked 2-μm wavelength fiber laser using a graphene-saturable absorber Optical Engineering. 51. DOI: 10.1117/1.Oe.52.7.076101 |
0.345 |
|
| 2012 |
Jernigan GG, Anderson TJ, Robinson JT, Caldwell JD, Culbertson JC, Myers-Ward R, Davidson AL, Ancona MG, Wheeler VD, Nyakiti LO, Friedman AL, Campbell PM, Kurt Gaskill D. Bilayer graphene by bonding CVD graphene to epitaxial graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 03D110. DOI: 10.1116/1.3701700 |
0.456 |
|
| 2012 |
Hwang WS, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3693593 |
0.475 |
|
| 2012 |
Anderson TJ, Hobart KD, Nyakiti LO, Wheeler VD, Myers-Ward RL, Caldwell JD, Bezares FJ, Jernigan GG, Tadjer MJ, Imhoff EA, Koehler AD, Gaskill DK, Eddy CR, Kub FJ. Investigation of the epitaxial graphene/p-SiC heterojunction Ieee Electron Device Letters. 33: 1610-1612. DOI: 10.1109/Led.2012.2211562 |
0.34 |
|
| 2012 |
Sidorov AN, Gaskill K, Buongiorno Nardelli M, Tedesco JL, Myers-Ward RL, Eddy CR, Jayasekera T, Kim KW, Jayasingha R, Sherehiy A, Stallard R, Sumanasekera GU. Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001̄) 6 H-SiC Journal of Applied Physics. 111. DOI: 10.1063/1.4725413 |
0.346 |
|
| 2012 |
Tadjer MJ, Anderson TJ, Hobart KD, Nyakiti LO, Wheeler VD, Myers-Ward RL, Gaskill DK, Eddy CR, Kub FJ, Calle F. Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures Applied Physics Letters. 100. DOI: 10.1063/1.4712621 |
0.357 |
|
| 2012 |
Mahadik NA, Stahlbush RE, Ancona MG, Imhoff EA, Hobart KD, Myers-Ward RL, Eddy CR, Kurt Gaskill D, Kub FJ. Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers Applied Physics Letters. 100. DOI: 10.1063/1.3679609 |
0.339 |
|
| 2012 |
Wheeler V, Garces N, Nyakiti L, Myers-Ward R, Jernigan G, Culbertson J, Eddy C, Kurt Gaskill D. Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics Carbon. 50: 2307-2314. DOI: 10.1016/J.Carbon.2012.01.050 |
0.458 |
|
| 2011 |
Hite JK, Twigg ME, Tedesco JL, Friedman AL, Myers-Ward RL, Eddy CR, Gaskill DK. Epitaxial graphene nucleation on C-face silicon carbide. Nano Letters. 11: 1190-4. PMID 21322598 DOI: 10.1021/Nl104072Y |
0.492 |
|
| 2011 |
Gaskill DK, Hite JK, Culbertson JC, Jernigan GG, Tedesco JL, Nyakiti LO, Wheeler VD, Myers-Ward RL, Garces NY, Eddy CR. Observations on C-face SiC graphene growth in argon Materials Science Forum. 679: 789-792. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.789 |
0.494 |
|
| 2011 |
Wheeler VD, VanMil BL, Myers-Ward RL, Chung S, Picard YN, Skowronski M, Stahlbush RE, Mahadik NA, Eddy CR, Gaskill DK. Effects of nitrogen doping on basal plane dislocation reduction in 8° off-cut 4H-SiC epilayers Materials Science Forum. 679: 63-66. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.63 |
0.379 |
|
| 2011 |
Myers-Ward RL, Nyakiti LO, Hite JK, Glembocki OJ, Bezares FJ, Caldwell JD, Imhoff GA, Hobart KD, Culbertson JC, Picard YN, Wheeler VD, Eddy CR, Gaskill DK. Growth of 4H- and 3C-SiC epitaxial layers on 4H-SiC step-free mesas Materials Science Forum. 679: 119-122. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.119 |
0.446 |
|
| 2011 |
Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934 |
0.439 |
|
| 2011 |
Moon JS, Curtis D, Zehnder D, Kim S, Gaskill DK, Jernigan GG, Myers-Ward RL, Eddy CR, Campbell PM, Lee KM, Asbeck P. Low-phase-noise graphene FETs in ambipolar RF applications Ieee Electron Device Letters. 32: 270-272. DOI: 10.1109/Led.2010.2100074 |
0.31 |
|
| 2011 |
Puls CP, Staley NE, Moon JS, Robinson JA, Campbell PM, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Liu Y. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene Applied Physics Letters. 99. DOI: 10.1063/1.3607284 |
0.454 |
|
| 2011 |
Chung S, Wheeler V, Myers-Ward R, Nyakiti LO, Eddy CR, Gaskill DK, Skowronski M, Picard YN. Secondary electron dopant contrast imaging of compound semiconductor junctions Journal of Applied Physics. 110: 014902. DOI: 10.1063/1.3597785 |
0.331 |
|
| 2011 |
Curtin AE, Fuhrer MS, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK. Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime Applied Physics Letters. 98. DOI: 10.1063/1.3595360 |
0.424 |
|
| 2011 |
Chung S, Wheeler V, Myers-Ward R, Eddy CR, Gaskill DK, Wu P, Picard YN, Skowronski M. Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy Journal of Applied Physics. 109: 094906. DOI: 10.1063/1.3579447 |
0.41 |
|
| 2011 |
Mahadik NA, Stahlbush RE, Qadri SB, Glembocki OJ, Alexson DA, Hobart KD, Caldwell JD, Myers-Ward RL, Tedesco JL, Eddy CR, Gaskill DK. Structure and morphology of inclusions in 4° offcut 4H-SiC epitaxial layers Journal of Electronic Materials. 40: 413-418. DOI: 10.1007/S11664-011-1570-8 |
0.393 |
|
| 2010 |
Friedman AL, Tedesco JL, Campbell PM, Culbertson JC, Aifer E, Perkins FK, Myers-Ward RL, Hite JK, Eddy CR, Jernigan GG, Gaskill DK. Quantum linear magnetoresistance in multilayer epitaxial graphene. Nano Letters. 10: 3962-5. PMID 20804213 DOI: 10.1021/Nl101797D |
0.445 |
|
| 2010 |
Yakes MK, Gunlycke D, Tedesco JL, Campbell PM, Myers-Ward RL, Eddy CR, Gaskill DK, Sheehan PE, Laracuente AR. Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions. Nano Letters. 10: 1559-62. PMID 20397734 DOI: 10.1021/Nl9035302 |
0.446 |
|
| 2010 |
Caldwell JD, Anderson TJ, Culbertson JC, Jernigan GG, Hobart KD, Kub FJ, Tadjer MJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. Acs Nano. 4: 1108-14. PMID 20099904 DOI: 10.1021/Nn901585P |
0.476 |
|
| 2010 |
Mahadik NA, Stahlbush RE, Qadri SB, Glembocki OJ, Alexson DA, Myers-Ward RL, Tedesco JL, Eddy CR, Gaskill DK. Structure of inclusions in 4° offcut 4H-SiC epitaxy Materials Science Forum. 645: 315-318. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.315 |
0.392 |
|
| 2010 |
Stahlbush RE, Myers-Ward RL, VanMil BL, Gaskill DK, Eddy CR. A pictorial tracking of basal plane dislocations in SiC epitaxy Materials Science Forum. 645: 271-276. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.271 |
0.381 |
|
| 2010 |
Maximenko SI, Freitas JA, Picard YN, Klein PB, Myers-Ward RL, Lew KK, Muzykov PG, Gaskill DK, Eddy CR, Sudarshan TS. CL/EBIC-SEM techniques for evaluation of impact of crystallographic defects on carrier lifetime in 4H-SiC epitaxial layers Materials Science Forum. 645: 211-214. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.211 |
0.374 |
|
| 2010 |
Klein PB, Myers-Ward R, Lew KK, VanMil BL, Eddy CR, Gaskill DK, Shrivastava A, Sudarshan TS. Temperature dependence of the carrier lifetime in 4H-SiC epilayers Materials Science Forum. 645: 203-206. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.203 |
0.383 |
|
| 2010 |
Caldwell JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Dry techniques for epitaxial graphene transfer Materials Research Society Symposium Proceedings. 1259: 17-22. DOI: 10.1557/Proc-1259-S18-05 |
0.388 |
|
| 2010 |
Caldwel JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Tadjer MJ, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Epitaxial graphene: Dry transfer and materials characterization Proceedings of Spie - the International Society For Optical Engineering. 7761. DOI: 10.1117/12.860676 |
0.493 |
|
| 2010 |
Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on si-face sic wafers with a peak transconductance of 600 mS/mm Ieee Electron Device Letters. 31: 260-262. DOI: 10.1109/Led.2010.2040132 |
0.433 |
|
| 2010 |
Tadjer MJ, Feygelson TI, Hobart KD, Caldwell JD, Anderson TJ, Butler JE, Eddy CR, Gaskill DK, Lew KK, Vanmil BL, Myers-Ward RL, Kub FJ, Sollenberger G, Brillson L. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC Applied Physics Letters. 97. DOI: 10.1063/1.3515858 |
0.349 |
|
| 2010 |
Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671 |
0.467 |
|
| 2010 |
Tedesco JL, Jernigan GG, Culbertson JC, Hite JK, Yang Y, Daniels KM, Myers-Ward RL, Eddy CR, Robinson JA, Trumbull KA, Wetherington MT, Campbell PM, Gaskill DK. Morphology characterization of argon-mediated epitaxial graphene on C-face SiC Applied Physics Letters. 96. DOI: 10.1063/1.3442903 |
0.474 |
|
| 2009 |
Robinson JA, Wetherington M, Tedesco JL, Campbell PM, Weng X, Stitt J, Fanton MA, Frantz E, Snyder D, VanMil BL, Jernigan GG, Myers-Ward RL, Eddy CR, Gaskill DK. Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale. Nano Letters. 9: 2873-6. PMID 19719106 DOI: 10.1021/Nl901073G |
0.454 |
|
| 2009 |
Zhang J, Fursin L, Li X, Wang X, Zhao JH, Vanmil BL, Myers-Ward RL, Eddy CR, Gaskill DK. 4H-SiC bipolar junction transistors with graded base doping profile Materials Science Forum. 615: 829-832. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.829 |
0.385 |
|
| 2009 |
VanMil BL, Stahlbush RE, Myers-Ward RL, Picard YN, Kitt SA, McCrate JM, Katz SL, Gaskill DK, Eddy CR. Basal plane dislocation mitigation in 8° off-cut 4H-SiC through in situ growth interrupts during chemical vapor deposition Materials Science Forum. 615: 61-66. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.61 |
0.388 |
|
| 2009 |
Eddy CR, Wu P, Zwieback I, Vanmil BL, Myers-Ward RL, Tedesco JL, Souzis AE, Gaskill DK. Microhardness of 6H- and 4H-SiC substrates Materials Science Forum. 615: 323-326. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.323 |
0.367 |
|
| 2009 |
VanMil BL, Myers-Ward RL, Tedesco JL, Eddy CR, Jernigan GG, Culbertson JC, Campbell PM, McCrate JM, Kitt SA, Gaskill DK. Graphene formation on SiC substrates Materials Science Forum. 615: 211-214. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.211 |
0.494 |
|
| 2009 |
Myers-Ward RL, VanMil BL, Stahlbush RE, Katz SL, McCrate JM, Kitt SA, Eddy CR, Gaskill DK. Turning of basal plane dislocations during epitaxial growth on 4° off-axis 4H-SiC Materials Science Forum. 615: 105-108. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.105 |
0.404 |
|
| 2009 |
Myers-Ward RL, Lew KK, VanMil BL, Stahlbush RE, Liu K, Caldwell JD, Klein PB, Wu P, Fatemi M, Eddy CR, Gaskill DK. Impact of 4H-SiC substrate defectivity on epilayer injected carrier lifetimes Materials Science Forum. 600: 481-484. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.481 |
0.401 |
|
| 2009 |
Stahlbush RE, VanMil BL, Liu KX, Lew KK, Myers-Ward RL, Gaskill DK, Eddy CR, Zhang X, Skowronski M. Evolution of basal plane dislocations during 4H-SiC epitaxial growth Materials Science Forum. 600: 317-320. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.317 |
0.371 |
|
| 2009 |
Tedesco JL, VanMil BL, Myers-Ward RL, Culbertson JC, Jernigan GG, Campbell PM, McCrate JM, Kitt SA, Eddy CR, Gaskill DK. Improvement of morphology and free carrier mobility through argon-assisted growth of epitaxial graphene on silicon carbide Ecs Transactions. 19: 137-150. DOI: 10.1149/1.3119538 |
0.368 |
|
| 2009 |
Gaskill DK, Jernigan GG, Campbell PM, Tedesco JL, Culbertson JC, VanMil BL, Myers-Ward RL, Eddy CR, Moon J, Curtis D, Hu M, Wong D, McGuire C, Robinson JA, Fanton MA, et al. Epitaxial graphene growth on SiC wafers Ecs Transactions. 19: 117-124. DOI: 10.1149/1.3119535 |
0.504 |
|
| 2009 |
Moon JS, Curtis D, Hu M, Wong D, McGuire C, Campbell PM, Jernigan G, Tedesco JL, VanMil B, Myers-Ward R, Eddy C, Gaskill DK. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates Ieee Electron Device Letters. 30: 650-652. DOI: 10.1109/Led.2009.2020699 |
0.487 |
|
| 2009 |
Twigg ME, Picard YN, Tedesco JL, Myers-Ward RL, VanMil BL, Eddy CR, Gaskill DK. Structure and defects in multilayer CVD graphene on C-face 6H-SiC 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378063 |
0.337 |
|
| 2009 |
Tedesco JL, Vanmil BL, Myers-Ward RL, McCrate JM, Kitt SA, Campbell PM, Jernigan GG, Culbertson JC, Eddy CR, Gaskill DK. Hall effect mobility of epitaxial graphene grown on silicon carbide Applied Physics Letters. 95. DOI: 10.1063/1.3224887 |
0.452 |
|
| 2008 |
Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-08 |
0.721 |
|
| 2008 |
Liu KX, Stahlbush RE, Lew KK, Myers-Ward RL, Vanmil BL, Gaskill KD, Eddy CR. Examination of in-grown stacking faults in 8°- and 4°-offcut 4H-SiC epitaxy by photoluminescence imaging Journal of Electronic Materials. 37: 730-735. DOI: 10.1007/S11664-008-0406-7 |
0.362 |
|
| 2008 |
Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Materials Research Society Symposium Proceedings. 1068: 255-260. |
0.723 |
|
| 2007 |
Shishkin Y, Myers-Ward RL, Saddow SE, Galyukov A, Vorob'ev AN, Brovin D, Bazarevskiy D, Talalaev RA, Makarov YN. Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Materials Science Forum. 61-64. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.61 |
0.551 |
|
| 2007 |
Lew KK, VanMil BL, Myers-Ward RL, Holm RT, Eddy CR, Gaskill DK. Etching of 4° and 8° 4H-SiC using various hydrogen-propane mixtures in a commercial hot-wall CVD reactor Materials Science Forum. 556: 513-516. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.513 |
0.375 |
|
| 2007 |
VanMil BL, Lew KK, Myers-Ward RL, Holm RT, Gaskill DK, Eddy CR. In-situ measurement of nitrogen during growth of 4H-SiC by CVD Materials Science Forum. 556: 125-128. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.125 |
0.347 |
|
| 2007 |
Tadjer MJ, Hobart KD, Caldwell JD, Butler JE, Liu KX, Eddy CR, Gaskill DK, Lew KK, Vanmil BL, Myers-Ward RL, Ancona MG, Kub FJ, Feygelson TI. Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2800886 |
0.368 |
|
| 2006 |
Myers-Ward RL, Shishkin Y, Kordina O, Haselbarth I, Saddow SE. High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD Materials Science Forum. 187-190. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.187 |
0.601 |
|
| 2005 |
Myers-Ward RL, Kordina O, Shishkin Z, Rao SP, Everly R, Saddow SE. Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive Materials Science Forum. 73-76. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.73 |
0.589 |
|
| 2004 |
Myers-Ward RL, Saddow SE, Rao SP, Hobart KD, Fatemi M, Kub FJ. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Materials Science Forum. 1511-1514. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1511 |
0.602 |
|
| 2004 |
Fawcett TJ, Wolan JT, Myers-Ward RL, Walker J, Saddow SE. Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers Materials Science Forum. 1499-1502. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1499 |
0.65 |
|
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