Year |
Citation |
Score |
2013 |
Sheehan MT, Farnham WB, Tran HV, Londono JD, Brun Y. High chi polymer development for DSA applications using RAFT technology Proceedings of Spie - the International Society For Optical Engineering. 8682. DOI: 10.1117/12.2018255 |
0.508 |
|
2011 |
Sheehan MT, Farnham WB, Chambers CR, Tran HV, Okazaki H, Brun Y, Romberger ML, Sounik JR. Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology Proceedings of Spie - the International Society For Optical Engineering. 7972. DOI: 10.1117/12.882960 |
0.74 |
|
2009 |
French RH, Tran HV. Immersion lithography: Photomask and wafer-level materials Annual Review of Materials Research. 39: 93-126. DOI: 10.1146/Annurev-Matsci-082908-145350 |
0.315 |
|
2009 |
Tran HV, Hendrickx E, Van Roey F, Vandenberghe G, French RH. Fluid-photoresist interactions and imaging in high-index immersion lithography Journal of Micro/Nanolithography, Mems, and Moems. 8. DOI: 10.1117/1.3224950 |
0.399 |
|
2008 |
Tran HV, Hendrickx E, French RH, Adelman DJ, Rogado NS, Kaku M, Mocella M, Schmieg JJ, Chen CY, Van Roey F, Bernfeld AS, Derryberry A RA. High refractive index fluid evaluations at 193 nm: Fluid lifetime and fluid/resist interaction studies Journal of Photopolymer Science and Technology. 21: 631-639. DOI: 10.2494/Photopolymer.21.631 |
0.383 |
|
2008 |
French RH, Tran HV, Adelman DJ, Rogado NS, Kaku M, Mocella M, Chen CY, Hendrickx E, Van Roey F, Bernfeld AS, Derryberry RA. High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitches Proceedings of Spie - the International Society For Optical Engineering. 6924. DOI: 10.1117/12.772105 |
0.355 |
|
2007 |
French RH, Liberman V, Tran HV, Feldman J, Adelman DJ, Wheland RC, Qiu W, McLain SJ, Nagao O, Kaku M, Mocella M, Yang MK, Lemon MF, Brubaker L, Shoe AL, et al. High index immersion lithography with second generation immersion fluids to enable numerical apertures of 1.55 for cost effective 32 nm half pitches Proceedings of Spie - the International Society For Optical Engineering. 6520. DOI: 10.1117/12.712234 |
0.321 |
|
2006 |
Feiring AE, Crawford MK, Farnham WB, Feldman J, French RH, Junk CP, Leffew KW, Petrov VA, Qiu W, Schadt FL, Tran HV, Zumsteg FC. New amorphous fluoropolymers of tetrafluoroethylene with fluorinated and non-fluorinated tricyclononenes. Semiconductor photoresists for imaging at 157 and 193 nm Macromolecules. 39: 3252-3261. DOI: 10.1021/Ma060070B |
0.591 |
|
2006 |
Feiring AE, Crawford MK, Farnham WB, French RH, Leffew KW, Petrov VA, Schadt FL, Tran HV, Zumsteg FC. Bis(fluoroalcohol) monomers and polymers: Improved transparency fluoropolymer photoresists for semiconductor photolithography at 157 nm Macromolecules. 39: 1443-1448. DOI: 10.1021/Ma051984L |
0.602 |
|
2005 |
Zumsteg FC, Leffew KW, Feiring AE, Crawford MK, Farnham WB, Petrov VA, Schadt FL, Tran HV. The impact of fluoropolymers on line edge roughness in 193 nm Imaging Journal of Photopolymer Science and Technology. 18: 467-469. DOI: 10.2494/Photopolymer.18.467 |
0.597 |
|
2002 |
Stewart MD, Tran HV, Schmid GM, Stachowiak TB, Becker DJ, Willson CG. Acid catalyst mobility in resist resins Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2946-2952. DOI: 10.1116/1.1523027 |
0.724 |
|
2002 |
Trinque BC, Chiba T, Hung RJ, Chambers CR, Pinnow MJ, Osborn BP, Tran HV, Wunderlich J, Hsieh YT, Thomas BH, Shafer G, Desmarteau DD, Conley W, Willson CG. Recent advances in resists for 157 nm microlithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 531-536. DOI: 10.1116/1.1450589 |
0.751 |
|
2002 |
Tran HV, Hung RJ, Chiba T, Yamada S, Mrozek T, Hsieh YT, Chambers CR, Osborn BP, Trinque BC, Pinnow MJ, MacDonald SA, Willson CG, Sanders DP, Connor EF, Grubbs RH, et al. Metal-catalyzed vinyl addition polymers for 157 nm resist applications. 2. Fluorinated norbornenes: Synthesis, polymerization, and initial imaging results Macromolecules. 35: 6539-6549. DOI: 10.1021/Ma0122371 |
0.737 |
|
2001 |
Tran HV, Hung RJ, Chiba T, Yamada S, Mrozek T, Hsieh Y, Chambers CR, Osborn BP, Trinque BC, Pinnow MJ, Sanders DP, Connor EF, Grubbs RH, Conley W, MacDonald SA, et al. Fluoropolymer Resist Materials for 157nm Microlithography. Journal of Photopolymer Science and Technology. 14: 669-674. DOI: 10.2494/Photopolymer.14.669 |
0.743 |
|
2000 |
Brodsky C, Byers J, Conley W, Hung R, Yamada S, Patterson K, Somervell M, Trinque B, Tran HV, Cho S, Chiba T, Lin SH, Jamieson A, Johnson H, Vander Heyden T, et al. 157 nm resist materials: Progress report Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3396-3401. DOI: 10.1116/1.1321762 |
0.635 |
|
1999 |
Postnikov SV, Stewart MD, Tran HV, Nierode MA, Medeiros DR, Cao T, Byers J, Webber SE, Wilson CG. Study of resolution limits due to intrinsic bias in chemically amplified photoresists Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 3335-3338. DOI: 10.1116/1.591007 |
0.533 |
|
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