| Year |
Citation |
Score |
| 2023 |
Zhang Y, Hu S, Chen PY, Zhu J, Chen B, Bai R, Zhu H, Chen L, Zhang DW, Lee JC, Sun Q, Ekerdt JG, Ji L. Post-annealing optimization of the heteroepitaxial La-doped SrSnO integrated on silicon ALD. Nanoscale. PMID 37158269 DOI: 10.1039/d2nr06861c |
0.337 |
|
| 2020 |
Chopra SN, Vos MFJ, Verheijen MA, Ekerdt JG, Kessels WMM, Mackus AJM. Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation Journal of Vacuum Science and Technology. 38: 62402. DOI: 10.1116/6.0000434 |
0.434 |
|
| 2020 |
Wu H, Ponath P, Lin EL, Wallace RM, Young C, Ekerdt JG, Demkov AA, McCartney MR, Smith DJ. Dielectric breakdown in epitaxial BaTiO3 thin films Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 44007. DOI: 10.1116/6.0000237 |
0.443 |
|
| 2020 |
Le TT, Ekerdt JG. Epitaxial growth of high-k BaxSr1−xTiO3 thin films on SrTiO3 (001) substrates by atomic layer deposition Journal of Vacuum Science and Technology. 38: 32401. DOI: 10.1116/1.5139908 |
0.53 |
|
| 2020 |
Lin EL, Posadas AB, Zheng L, Wu HW, Chen P, Coffey BM, Lai K, Demkov AA, Smith DJ, Ekerdt JG. Epitaxial integration of ferroelectric and conductive perovskites on silicon Journal of Vacuum Science and Technology. 38: 22403. DOI: 10.1116/1.5134077 |
0.453 |
|
| 2020 |
Chen P, Hadamek T, Kwon S, Al-Quaiti F, Posadas AB, Kim MJ, Demkov AA, Ekerdt JG. Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN(0001) via atomic layer deposition Journal of Vacuum Science and Technology. 38: 12403. DOI: 10.1116/1.5131638 |
0.531 |
|
| 2020 |
Coffey BM, Nallan HC, Engstrom JR, Lam CH, Ekerdt JG. Vacuum Ultraviolet-Enhanced OxidationA Routeto the Atomic Layer Etching of Palladium Metal Chemistry of Materials. 32: 6035-6042. DOI: 10.1021/Acs.Chemmater.0C01379 |
0.324 |
|
| 2020 |
Le T, Kurt O, Ouyang J, Wang J, Chen L, Lin EL, Ekerdt JG, Ren Y. Engineering nanoscale polarization at the SrTiO3/Ge interface Scripta Materialia. 178: 489-492. DOI: 10.1016/J.Scriptamat.2019.12.033 |
0.376 |
|
| 2020 |
Wu H, Lu S, Aoki T, Ponath P, Wang J, Young C, Ekerdt JG, McCartney MR, Smith DJ. Direct Observation of Large Atomic Polar Displacements in Epitaxial Barium Titanate Thin Films Advanced Materials Interfaces. 7: 2000555. DOI: 10.1002/Admi.202000555 |
0.407 |
|
| 2019 |
Chen P, Lam CH, Edmondson B, Posadas AB, Demkov AA, Ekerdt JG. Epitaxial BaSnO3 and SrSnO3 perovskite growth on SrTiO3(001) via atomic layer deposition Journal of Vacuum Science & Technology A. 37: 050902. DOI: 10.1116/1.5111969 |
0.497 |
|
| 2019 |
Zhang Z, Dwyer T, Sirard SM, Ekerdt JG. Area-selective atomic layer deposition of cobalt oxide to generate patterned cobalt films Journal of Vacuum Science & Technology A. 37: 020905. DOI: 10.1116/1.5066437 |
0.508 |
|
| 2019 |
Zhang Z, Nallan HC, Coffey BM, Ngo TQ, Pramanik T, Banerjee SK, Ekerdt JG. Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films Journal of Vacuum Science & Technology A. 37: 010903. DOI: 10.1116/1.5063669 |
0.499 |
|
| 2019 |
Edmondson BI, Kwon S, Lam CH, Ortmann JE, Demkov AA, Kim MJ, Ekerdt JG. Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition Journal of the American Ceramic Society. 103: 1209-1218. DOI: 10.1111/Jace.16815 |
0.484 |
|
| 2019 |
Lin EL, Posadas AB, Zheng L, Elliott Ortmann J, Abel S, Fompeyrine J, Lai K, Demkov AA, Ekerdt JG. Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications Journal of Applied Physics. 126: 064101. DOI: 10.1063/1.5087571 |
0.516 |
|
| 2019 |
Foster ND, Edmondson BI, Ekerdt JG, Smith DJ, Downer MC. Strain-dependence of χ(2) in thin film barium strontium titanate Aip Advances. 9: 025312. DOI: 10.1063/1.5055731 |
0.431 |
|
| 2019 |
Coffey BM, Lin EL, Chen P, Ekerdt JG. Area-Selective Atomic Layer Deposition of Crystalline BaTiO 3 Chemistry of Materials. 31: 5558-5565. DOI: 10.1021/Acs.Chemmater.9B01271 |
0.515 |
|
| 2019 |
Vos MFJ, Chopra SN, Verheijen MA, Ekerdt JG, Agarwal S, Kessels WMM, Mackus AJM. Area-Selective Deposition of Ruthenium by Combining Atomic Layer Deposition and Selective Etching Chemistry of Materials. 31: 3878-3882. DOI: 10.1021/Acs.Chemmater.9B00193 |
0.361 |
|
| 2018 |
Hu S, Ekerdt JG. Preventing carbon contamination of Ge (001) during atomic layer deposition with a barium-based Zintl layer Journal of Vacuum Science & Technology A. 36: 041403. DOI: 10.1116/1.5029918 |
0.404 |
|
| 2018 |
Edmondson BI, Liu S, Lu S, Wu H, Posadas A, Smith DJ, Gao XPA, Demkov AA, Ekerdt JG. Effect of SrTiO3 oxygen vacancies on the conductivity of LaTiO3/SrTiO3 heterostructures Journal of Applied Physics. 124: 185303. DOI: 10.1063/1.5046081 |
0.452 |
|
| 2018 |
Hu S, Ji L, Chen P, Edmondson BI, Chang H, Posadas A, Wu HW, Yu ET, Smith DJ, Demkov AA, Ekerdt JG. Crystalline SrZrO3deposition on Ge (001) by atomic layer deposition for high-kdielectric applications Journal of Applied Physics. 124: 044102. DOI: 10.1063/1.5026790 |
0.477 |
|
| 2017 |
Hu S, Lin EL, Hamze AK, Posadas A, Wu H, Smith DJ, Demkov AA, Ekerdt JG. Zintl layer formation during perovskite atomic layer deposition on Ge (001). The Journal of Chemical Physics. 146: 052817. PMID 28178808 DOI: 10.1063/1.4972071 |
0.434 |
|
| 2017 |
Lin EL, Hu S, Ekerdt JG. Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition Proceedings of Spie. 10105: 1010519. DOI: 10.1117/12.2254196 |
0.333 |
|
| 2017 |
Chen P, Posadas AB, Kwon S, Wang Q, Kim MJ, Demkov AA, Ekerdt JG. Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition Journal of Applied Physics. 122: 215302. DOI: 10.1063/1.4999342 |
0.446 |
|
| 2017 |
Wu H, Lu S, Aoki T, Ponath P, Ekerdt JG, Demkov AA, McCartney MR, Smith DJ. Integration of ferroelectric BaTiO3 with Ge: The role of a SrTiO3 buffer layer investigated using aberration-corrected STEM Applied Physics Letters. 110: 252901. DOI: 10.1063/1.4986186 |
0.381 |
|
| 2017 |
Cheng F, Johnson AD, Tsai Y, Su P, Hu S, Ekerdt JG, Shih C. Enhanced Photoluminescence of Monolayer WS2 on Ag Films and Nanowire–WS2–Film Composites Bulletin of the American Physical Society. 2017: 1421-1430. DOI: 10.1021/Acsphotonics.7B00152 |
0.326 |
|
| 2017 |
Bost DE, Kim H, Chou C, Hwang GS, Ekerdt JG. First-principles predictions of ruthenium-phosphorus and ruthenium-boron glassy structures and chemical vapor deposition of thin amorphous ruthenium-boron alloy films Thin Solid Films. 622: 56-64. DOI: 10.1016/J.Tsf.2016.12.016 |
0.431 |
|
| 2017 |
Lin EL, Posadas AB, Wu HW, Smith DJ, Demkov AA, Ekerdt JG. Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition Journal of Crystal Growth. 476: 6-11. DOI: 10.1016/J.Jcrysgro.2017.08.003 |
0.553 |
|
| 2016 |
Lin EL, Edmondson BI, Hu S, Ekerdt JG. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition. Journal of Visualized Experiments : Jove. PMID 27501462 DOI: 10.3791/54268 |
0.515 |
|
| 2016 |
Hu C, McDaniel MD, Jiang A, Posadas A, Demkov A, Ekerdt JG, Yu ET. A low-leakage epitaxial high-κ gate oxide for germanium metal-oxide-semiconductor devices. Acs Applied Materials & Interfaces. PMID 26859048 DOI: 10.1021/Acsami.5B10661 |
0.329 |
|
| 2016 |
Hu S, McDaniel MD, Posadas A, Hu C, Wu HW, Yu ET, Smith DJ, Demkov AA, Ekerdt JG. Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1−xO3 Mrs Communications. 1-8. DOI: 10.1557/Mrc.2016.36 |
0.471 |
|
| 2016 |
Smith DJ, Wu HW, Lu S, Aoki T, Ponath P, Fredrickson K, McDaniel MD, Lin E, Posadas AB, Demkov AA, Ekerdt J, McCartney MR. Recent studies of oxide-semiconductor heterostructures using aberration-corrected scanning transmission electron microscopy Journal of Materials Research. 1-9. DOI: 10.1557/Jmr.2016.273 |
0.384 |
|
| 2016 |
Liao W, Ekerdt JG. Precursor dependent nucleation and growth of ruthenium films during chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4953882 |
0.494 |
|
| 2016 |
Liao W, Ekerdt JG. Ru nucleation and thin film smoothness improvement with ammonia during chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944852 |
0.499 |
|
| 2016 |
Liao W, Bost D, Chiu CY, Hwang GS, Ekerdt JG. Materials science of Ru and Ru alloy thin films for barrier applications 2016 Ieee International Interconnect Technology Conference / Advanced Metallization Conference, Iitc/Amc 2016. 102-104. DOI: 10.1109/IITC-AMC.2016.7507697 |
0.397 |
|
| 2016 |
Fredrickson KD, McDaniel MD, Slepko A, Ekerdt JG, Demkov AA. Theoretical modeling and experimental observations of the atomic layer deposition of SrO using a cyclopentadienyl Sr precursor The Journal of Chemical Physics. 145: 064701. DOI: 10.1063/1.4960509 |
0.44 |
|
| 2016 |
Lu S, Kormondy KJ, Ngo TQ, Aoki T, Posadas A, Ekerdt JG, Demkov AA, McCartney MR, Smith DJ. Spectrum and phase mapping across the epitaxial γ-Al2O3/SrTiO3 interface Applied Physics Letters. 108. DOI: 10.1063/1.4941290 |
0.323 |
|
| 2016 |
Chopra SN, Zhang Z, Kaihlanen C, Ekerdt JG. Selective Growth of Titanium Nitride on HfO2across Nanolines and Nanopillars Chemistry of Materials. 28: 4928-4934. DOI: 10.1021/Acs.Chemmater.6B01036 |
0.459 |
|
| 2016 |
Mccrate JM, Ekerdt JG. Chemical nature of active sites for defect-mediated nucleation on silicon dioxide Aiche Journal. 62: 367-372. DOI: 10.1002/Aic.15023 |
0.317 |
|
| 2015 |
Ji L, McDaniel MD, Wang S, Posadas AB, Li X, Huang H, Lee JC, Demkov AA, Bard AJ, Ekerdt JG, Yu ET. A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst. Nature Nanotechnology. 10: 84-90. PMID 25437745 DOI: 10.1038/Nnano.2014.277 |
0.339 |
|
| 2015 |
Ngo TQ, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG. Oxygen vacancies at the γ-Al<inf>2</inf>O<inf>3</inf>/STO heterointerface grown by atomic layer deposition Materials Research Society Symposium Proceedings. 1730: 14-19. DOI: 10.1557/Opl.2015.294 |
0.459 |
|
| 2015 |
McDaniel MD, Ngo TQ, Hu S, Posadas A, Demkov AA, Ekerdt JG. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors Applied Physics Reviews. 2. DOI: 10.1063/1.4934574 |
0.467 |
|
| 2015 |
Ngo TQ, Goble NJ, Posadas A, Kormondy KJ, Lu S, McDaniel MD, Jordan-Sweet J, Smith DJ, Gao XPA, Demkov AA, Ekerdt JG. Quasi-two-dimensional electron gas at the interface of γ-Al<inf>2</inf>O<inf>3</inf>/SrTiO<inf>3</inf> heterostructures grown by atomic layer deposition Journal of Applied Physics. 118. DOI: 10.1063/1.4930575 |
0.482 |
|
| 2015 |
Kormondy KJ, Posadas AB, Ngo TQ, Lu S, Goble N, Jordan-Sweet J, Gao XPA, Smith DJ, McCartney MR, Ekerdt JG, Demkov AA. Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies Journal of Applied Physics. 117. DOI: 10.1063/1.4913860 |
0.391 |
|
| 2015 |
McDaniel MD, Hu C, Lu S, Ngo TQ, Posadas A, Jiang A, Smith DJ, Yu ET, Demkov AA, Ekerdt JG. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications Journal of Applied Physics. 117. DOI: 10.1063/1.4906953 |
0.523 |
|
| 2015 |
Demkov AA, Ponath P, Fredrickson K, Posadas AB, McDaniel MD, Ngo TQ, Ekerdt JG. Integrated films of transition metal oxides for information technology Microelectronic Engineering. 147: 285-289. DOI: 10.1016/J.Mee.2015.04.090 |
0.463 |
|
| 2014 |
Elko-Hansen TD, Dolocan A, Ekerdt JG. Atomic Interdiffusion and Diffusive Stabilization of Cobalt by Copper During Atomic Layer Deposition from Bis(N-tert-butyl-N'-ethylpropionamidinato) Cobalt(II). The Journal of Physical Chemistry Letters. 5: 1091-5. PMID 26274454 DOI: 10.1021/Jz500281K |
0.447 |
|
| 2014 |
Hu C, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG, Yu ET. Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon. Nano Letters. 14: 4360-7. PMID 25072099 DOI: 10.1021/Nl501249Q |
0.33 |
|
| 2014 |
Ngo TQ, McDaniel MD, Posadas A, Demkov AA, Ekerdt JG. Growth of crystalline LaAlO3 by atomic layer deposition Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045532 |
0.529 |
|
| 2014 |
Zhai Y, Mathew L, Rao R, Palard M, Chopra S, Ekerdt JG, Register LF, Banerjee SK. High-performance vertical gate-all-around silicon nanowire FET with high-κ/metal gate Ieee Transactions On Electron Devices. 61: 3896-3900. DOI: 10.1109/Ted.2014.2353658 |
0.337 |
|
| 2014 |
McDaniel MD, Posadas A, Ngo TQ, Karako CM, Bruley J, Frank MM, Narayanan V, Demkov AA, Ekerdt JG. Incorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates Journal of Applied Physics. 115. DOI: 10.1063/1.4883767 |
0.552 |
|
| 2014 |
Ngo TQ, Posadas AB, McDaniel MD, Hu C, Bruley J, Yu ET, Demkov AA, Ekerdt JG. Epitaxial c -axis oriented BaTiO3 thin films on SrTiO 3-buffered Si(001) by atomic layer deposition Applied Physics Letters. 104. DOI: 10.1063/1.4867469 |
0.524 |
|
| 2014 |
Rettie AJE, Mozaffari S, McDaniel MD, Pearson KN, Ekerdt JG, Markert JT, Mullins CB. Pulsed laser deposition of epitaxial and polycrystalline bismuth vanadate thin films Journal of Physical Chemistry C. 118: 26543-26550. DOI: 10.1021/Jp5082824 |
0.514 |
|
| 2014 |
McCrate JM, Ekerdt JG. Coverage-dependent luminescence from two-dimensional systems of covalently attached perylene fluorophores on silica Journal of Physical Chemistry C. 118: 2104-2114. DOI: 10.1021/Jp411051Z |
0.301 |
|
| 2014 |
Elko-Hansen TDM, Ekerdt JG. XPS investigation of the atomic layer deposition half reactions of bis(N-tert-butyl-N′-ethylpropionamidinato) cobalt(II) Chemistry of Materials. 26: 2642-2646. DOI: 10.1021/Cm5002237 |
0.364 |
|
| 2014 |
McCrate JM, Ekerdt JG. Detection of low-density surface sites on silica: Experimental evidence of intrinsic oxygen-vacancy defects Chemistry of Materials. 26: 2166-2171. DOI: 10.1021/Cm500095P |
0.305 |
|
| 2014 |
Bost DE, Ekerdt JG. Chemical vapor deposition of ruthenium-phosphorus alloy thin films: Using phosphine as the phosphorus source Thin Solid Films. 558: 160-164. DOI: 10.1016/J.Tsf.2014.03.018 |
0.483 |
|
| 2014 |
McDaniel MD, Ngo TQ, Posadas A, Hu C, Lu S, Smith DJ, Yu ET, Demkov AA, Ekerdt JG. Epitaxy: A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors (Adv. Mater. Interfaces 8/2014) Advanced Materials Interfaces. 1: n/a-n/a. DOI: 10.1002/Admi.201470050 |
0.318 |
|
| 2014 |
McDaniel MD, Ngo TQ, Posadas A, Hu C, Lu S, Smith DJ, Yu ET, Demkov AA, Ekerdt JG. A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400081 |
0.534 |
|
| 2013 |
McCrate JM, Ekerdt JG. Titration of free hydroxyl and strained siloxane sites on silicon dioxide with fluorescent probes. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 11868-75. PMID 23978272 DOI: 10.1021/La402825T |
0.314 |
|
| 2013 |
McDaniel MD, Posadas A, Ngo TQ, Dhamdhere A, Smith DJ, Demkov AA, Ekerdt JG. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4770291 |
0.563 |
|
| 2013 |
Hu C, McDaniel MD, Ekerdt JG, Yu ET. High ON/OFF ratio and quantized conductance in resistive switching of TiO2 on silicon Ieee Electron Device Letters. 34: 1385-1387. DOI: 10.1109/Led.2013.2282154 |
0.347 |
|
| 2013 |
Ngo TQ, Posadas A, Seo H, Hoang S, McDaniel MD, Utess D, Triyoso DH, Buddie Mullins C, Demkov AA, Ekerdt JG. Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation Journal of Applied Physics. 114. DOI: 10.1063/1.4819106 |
0.532 |
|
| 2013 |
Liao W, Ekerdt JG. Effect of CO on Ru nucleation and ultra-smooth thin film growth by chemical vapor deposition at low temperature Chemistry of Materials. 25: 1793-1799. DOI: 10.1021/Cm400321J |
0.529 |
|
| 2013 |
Ngo TQ, Posadas A, McDaniel MD, Ferrer DA, Bruley J, Breslin C, Demkov AA, Ekerdt JG. Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition Journal of Crystal Growth. 363: 150-157. DOI: 10.1016/J.Jcrysgro.2012.10.032 |
0.543 |
|
| 2012 |
McDaniel MD, Posadas A, Ngo TQ, Dhamdhere A, Smith DJ, Demkov AA, Ekerdt JG. Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001) Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4734311 |
0.533 |
|
| 2012 |
McDaniel MD, Posadas A, Wang T, Demkov AA, Ekerdt JG. Growth and characterization of epitaxial anatase TiO 2(001) on SrTiO 3-buffered Si(001) using atomic layer deposition Thin Solid Films. 520: 6525-6530. DOI: 10.1016/J.Tsf.2012.06.061 |
0.539 |
|
| 2012 |
Bost DE, Ekerdt JG. Barrier performance for low carbon ruthenium-phosphorus alloy films grown by chemical vapor deposition Advanced Metallization Conference (Amc). 52. |
0.372 |
|
| 2011 |
Wang T, Ekerdt JG. Atomic layer deposition of tantalum-incorporated hafnium dioxide: Strategies to enhance thermal stability Journal of the Electrochemical Society. 158: G185-G193. DOI: 10.1149/1.3598172 |
0.445 |
|
| 2011 |
Wang T, Wei J, Downer MC, Ekerdt JG. Optical properties of La-incorporated HfO2 upon crystallization Applied Physics Letters. 98. DOI: 10.1063/1.3567522 |
0.346 |
|
| 2011 |
Elko-Hansen TDM, McCrate JM, Ekerdt JG. Enhanced nucleation of Pt particles on boron-treated highly oriented pyrolytic graphite via chemical vapor deposition Journal of Physical Chemistry C. 115: 9048-9052. DOI: 10.1021/Jp1108366 |
0.399 |
|
| 2011 |
Kim H, Chou CY, Ekerdt JG, Hwang GS. Structure and properties of Li-Si alloys: A first-principles study Journal of Physical Chemistry C. 115: 2514-2521. DOI: 10.1021/Jp1083899 |
0.353 |
|
| 2011 |
Wang T, Ekerdt JG. Structure versus thermal stability: The periodic structure of atomic layer deposition-grown al-incorporated HfO2 films and its effects on amorphous stabilization Chemistry of Materials. 23: 1679-1685. DOI: 10.1021/Cm102057D |
0.482 |
|
| 2011 |
Salivati N, Shuall N, McCrate JM, Ekerdt JG. Effect of subsurface boron on photoluminescence from silicon nanocrystals Surface Science. 605: 799-801. DOI: 10.1016/J.Susc.2011.01.022 |
0.823 |
|
| 2011 |
McCrate JM, Salivati N, Ekerdt JG. Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide Journal of Crystal Growth. 321: 131-135. DOI: 10.1016/J.Jcrysgro.2011.02.017 |
0.819 |
|
| 2011 |
Wu F, Valle N, Fitzpatrick R, Ekerdt JG, Houssiau L, Migeon HN. Elaboration and quantitative investigation of BCN-type films by dynamic SIMS using the MCsx+ mode Surface and Interface Analysis. 43: 669-672. DOI: 10.1002/Sia.3532 |
0.448 |
|
| 2011 |
Bost DE, Ekerdt JG. Chemical vapor deposition of low carbon ruthenium-phosphorus alloy films for Cu interconnect applications Advanced Metallization Conference (Amc). 100-101. |
0.319 |
|
| 2010 |
Henderson LB, Ekerdt JG. Effect of phosphorus and carbon incorporation in amorphous cobalt films prepared by chemical vapor deposition Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3251283 |
0.815 |
|
| 2010 |
Henderson LB, Rivers JH, Bost DE, Jones RA, Ekerdt JG. Nanocrystalline cobalt-based films with high thermal stability from a single molecule Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 54-60. DOI: 10.1116/1.3264480 |
0.808 |
|
| 2010 |
Zhou W, Ushakov SV, Wang T, Ekerdt JG, Demkov AA, Navrotsky A. Hafnia: Energetics of thin films and nanoparticles Journal of Applied Physics. 107. DOI: 10.1063/1.3435317 |
0.491 |
|
| 2010 |
Salivati N, Shuall N, McCrate JM, Ekerdt JG. Effect of surface chemistry on quantum confinement and photoluminescence of ammonia-passivated silicon nanocrystals Journal of Physical Chemistry Letters. 1: 1957-1961. DOI: 10.1021/Jz100581C |
0.815 |
|
| 2010 |
Salivati N, Shuall N, McCrate JM, Ekerdt JG. Chemistry of silicon nanocrystal surfaces exposed to ammonia Journal of Physical Chemistry C. 114: 16924-16928. DOI: 10.1021/Jp912052U |
0.813 |
|
| 2010 |
Kim H, Kweon KE, Chou CY, Ekerdt JG, Hwang GS. On the nature and behavior of Li atoms in Si: A first principles study Journal of Physical Chemistry C. 114: 17942-17946. DOI: 10.1021/Jp104289X |
0.342 |
|
| 2010 |
Wang T, Ekerdt JG. Subnanoscale lanthanum distribution in lanthanum-incorporated hafnium oxide thin films grown using atomic layer deposition Chemistry of Materials. 22: 3798-3806. DOI: 10.1021/Cm903386C |
0.466 |
|
| 2010 |
Henderson LB, Ekerdt JG. Chemically capping copper with cobalt Microelectronic Engineering. 87: 588-592. DOI: 10.1016/J.Mee.2009.08.017 |
0.769 |
|
| 2010 |
Bost DE, Ekerdt JG. Chemical vapor deposition of ruthenium-phosphorus alloy films for Cu interconnect applications: Impact of the phosphorus source Advanced Metallization Conference (Amc). 47-48. |
0.315 |
|
| 2009 |
Henderson LB, Ekerdt JG. Chemical vapor deposition of amorphous cobalt-phosphorus alloy films Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3082020 |
0.819 |
|
| 2009 |
Fitzpatrick PR, Ekerdt JG. Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2366-2374. DOI: 10.1116/1.3253534 |
0.441 |
|
| 2009 |
Salivati N, Shuall N, Baskin E, Garber V, McCrate JM, Ekerdt JG. Influence of surface chemistry on photoluminescence from deuterium-passivated silicon nanocrystals Journal of Applied Physics. 106. DOI: 10.1063/1.3224952 |
0.823 |
|
| 2009 |
Wang T, Ekerdt JG. Atomic layer deposition of lanthanum stabilized amorphous hafnium oxide thin films Chemistry of Materials. 21: 3096-3101. DOI: 10.1021/Cm9001064 |
0.504 |
|
| 2009 |
Thom KM, Ekerdt JG. The effect of an iodine source on nucleation and film properties of Ru films deposited by chemical vapor deposition Thin Solid Films. 518: 36-42. DOI: 10.1016/J.Tsf.2009.06.006 |
0.831 |
|
| 2009 |
Fitzpatrick PR, Wang T, Heitsch AT, Korgel BA, Ekerdt JG. Oxidation resistance of thin boron carbo-nitride films on Ge(100) and Ge nanowires Thin Solid Films. 517: 3686-3694. DOI: 10.1016/J.Tsf.2009.01.158 |
0.495 |
|
| 2009 |
Salivati N, An YQ, Downer MC, Ekerdt JG. Hot-wire chemical vapor deposition of silicon nanoparticles on fused silica Thin Solid Films. 517: 3481-3483. DOI: 10.1016/J.Tsf.2009.01.060 |
0.826 |
|
| 2009 |
Henderson LB, Ekerdt JG. Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier Thin Solid Films. 517: 1645-1649. DOI: 10.1016/J.Tsf.2008.10.009 |
0.772 |
|
| 2009 |
Salivati N, Ekerdt JG. Temperature programmed desorption studies of deuterium passivated silicon nanocrystals Surface Science. 603: 1121-1125. DOI: 10.1016/J.Susc.2009.02.033 |
0.818 |
|
| 2009 |
Thom KM, Ekerdt JG. Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta Surface Science. 603: 921-932. DOI: 10.1016/J.Susc.2009.02.003 |
0.787 |
|
| 2008 |
Fitzpatrick PR, Ekerdt JG. Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1397-1406. DOI: 10.1116/1.2976564 |
0.466 |
|
| 2008 |
Shin J, Kim HW, Agapiou K, Jones RA, Hwang GS, Ekerdt JG. Effects of P on amorphous chemical vapor deposition Ru-P alloy films for Cu interconnect liner applications Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 974-979. DOI: 10.1116/1.2832360 |
0.637 |
|
| 2008 |
Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889 |
0.369 |
|
| 2008 |
Ekerdt JG, Shin J, Kim H, Henderson LB, Hwang GS, Agapiou K, Jones RA. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films for Cu interconnect applications Advanced Metallization Conference (Amc). 179-185. DOI: 10.1016/J.Tsf.2007.01.002 |
0.67 |
|
| 2008 |
Winkenwerder WA, Ekerdt JG. Germanium interactions with Si-etched silicon dioxide Surface Science. 602: 3071-3076. DOI: 10.1016/J.Susc.2008.08.007 |
0.456 |
|
| 2008 |
Winkenwerder WA, Ekerdt JG. Interaction of germanium with silicon dioxide Surface Science. 602: 2796-2800. DOI: 10.1016/J.Susc.2008.07.010 |
0.45 |
|
| 2008 |
Bae J, Thompson-Flagg R, Ekerdt JG, Shih C. Pattern formation of nanoflowers during the vapor–liquid–solid growth of silicon nanowires Physica B: Condensed Matter. 403: 3514-3518. DOI: 10.1016/J.Physb.2008.05.029 |
0.37 |
|
| 2008 |
Bae J, Kulkarni NN, Zhou JP, Ekerdt JG, Shih CK. VLS growth of Si nanocones using Ga and Al catalysts Journal of Crystal Growth. 310: 4407-4411. DOI: 10.1016/J.Jcrysgro.2008.06.084 |
0.38 |
|
| 2008 |
Winkenwerder WA, Ekerdt JG. The role of oxidized germanium in the growth of germanium nanoparticles on hafnia Journal of Crystal Growth. 310: 3758-3762. DOI: 10.1016/J.Jcrysgro.2008.05.051 |
0.365 |
|
| 2008 |
Ekerdt JG, Shin J, Kim H, Henderson LB, Hwang GS, Agapiou K, Jones RA. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films for Cu interconnect applications Advanced Metallization Conference (Amc). 179-185. |
0.771 |
|
| 2007 |
Ekerdt J, Shin J, Winkenwerder W, Kim HW, Thom K, Hwang GS, Agapiou K, Jones RA. Chemical routes to ultra thin films for copper barriers and liners Materials Research Society Symposium Proceedings. 990: 93-94. DOI: 10.1557/Proc-0990-B09-01 |
0.805 |
|
| 2007 |
Ahearn WJ, Fitzpatrick PR, Ekerdt JG. Sealing ultralow κ porous dielectrics with thin boron carbonitride films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 570-574. DOI: 10.1116/1.2731365 |
0.522 |
|
| 2007 |
Coffee SS, Ekerdt JG. Investigation of Volmer-Weber growth mode kinetics for germanium nanoparticles on hafnia Journal of Applied Physics. 102. DOI: 10.1063/1.2821746 |
0.817 |
|
| 2007 |
Shin J, Kim HW, Hwang GS, Ekerdt JG. Chemical routes to ultra thin films for copper barriers and liners Surface and Coatings Technology. 201: 9256-9259. DOI: 10.1016/J.Surfcoat.2007.03.019 |
0.656 |
|
| 2007 |
Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024 |
0.834 |
|
| 2006 |
Shin J, Waheed A, Agapiou K, Winkenwerder WA, Kim HW, Jones RA, Hwang GS, Ekerdt JG. Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor. Journal of the American Chemical Society. 128: 16510-1. PMID 17177394 DOI: 10.1021/Ja0673938 |
0.634 |
|
| 2006 |
Stanley SK, Ekerdt JG. Combinatorial studies for high density Si and Ge nanoparticle arrays Materials Research Society Symposium Proceedings. 933: 37-42. DOI: 10.1557/Proc-0933-G05-11 |
0.412 |
|
| 2006 |
Stanley SK, Ekerdt JG. Core-shell Ge nanoparticles on oxide surfaces for enhanced interface stability Materials Research Society Symposium Proceedings. 933: 7-12. DOI: 10.1557/Proc-0933-G02-07 |
0.377 |
|
| 2006 |
Coffee SS, Winkenwerder WA, Stanley SK, Davood S, Banerjee SK, Ekerdt JG. Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia Mrs Proceedings. 921. DOI: 10.1557/Proc-0921-T07-09 |
0.836 |
|
| 2006 |
Coffee SS, Stanley SK, Ekerdt JG. Directed nucleation of ordered nanoparticle arrays on amorphous surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1913-1917. DOI: 10.1116/1.2221318 |
0.835 |
|
| 2006 |
Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Ge interactions on HfO 2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO 2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 78-83. DOI: 10.1116/1.2137328 |
0.475 |
|
| 2006 |
Kirsch PD, Quevedo-Lopez MA, Li HJ, Senzaki Y, Peterson JJ, Song SC, Krishnan SA, Moumen N, Barnett J, Bersuker G, Hung PY, Lee BH, Lafford T, Wang Q, Gay D, ... Ekerdt JG, et al. Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility Journal of Applied Physics. 99. DOI: 10.1063/1.2161819 |
0.678 |
|
| 2006 |
Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Surface reactions and kinetically-driven patterning scheme for selective deposition of Si and Ge nanoparticle arrays on HfO2 Surface Science. 600. DOI: 10.1016/J.Susc.2005.12.029 |
0.466 |
|
| 2005 |
Wu K, Bailey TC, Willson CG, Ekerdt JG. Surface hydration and its effect on fluorinated SAM formation on SiO2 surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 11795-801. PMID 16316116 DOI: 10.1021/La0516330 |
0.476 |
|
| 2005 |
Stanley SK, Coffee SS, Ekerdt JG. Influence of thermal treatments on the chemistry and self-assembly of Ge nanoparticles on SiO2 surfaces Materials Research Society Symposium Proceedings. 830: 51-56. DOI: 10.1557/Proc-830-D1.8 |
0.835 |
|
| 2005 |
Stanley SK, Coffee SS, Ekerdt JG. Directed self assembly of nanocrystals within macroscopic to nanoscopic features Materials Research Society Symposium Proceedings. 901: 281-286. DOI: 10.1557/Proc-0901-Ra19-03 |
0.791 |
|
| 2005 |
Engbrecht ER, Fitzpatrick PR, Junker KH, Sun YM, White JM, Ekerdt JG. Adhesion of chemical vapor deposited boron carbo-nitride to dielectric and copper films Journal of Materials Research. 20: 2218-2224. DOI: 10.1557/Jmr.2005.0279 |
0.837 |
|
| 2005 |
Kim EK, Stewart MD, Wu K, Palmieri FL, Dickey MD, Ekerdt JG, Willson CG. Vinyl ether formulations for step and flash imprint lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2967-2971. DOI: 10.1116/1.2131881 |
0.304 |
|
| 2005 |
Engbrecht ER, Sun YM, Junker KH, White JM, Ekerdt JG. Copper diffusion barrier properties of CVD boron carbo-nitride Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 463-467. DOI: 10.1116/1.1865072 |
0.809 |
|
| 2005 |
Kulkarni NN, Bae J, Shih CK, Stanley SK, Coffee SS, Ekerdt JG. Low-threshold field emission from cesiated silicon nanowires Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136217 |
0.796 |
|
| 2005 |
Shin J, Gay D, Sun YM, White JM, Ekerdt JG. Growth and characterization of ultrathin metal films for ULSI interconnects Aip Conference Proceedings. 788: 482-487. DOI: 10.1063/1.2063006 |
0.656 |
|
| 2005 |
Lemonds AM, Bolom T, Ahearn WJ, Gay DC, White JM, Ekerdt JG. Atomic layer deposition of TaSix thin films on SiO2 using TaF5 and Si2H6 Thin Solid Films. 488: 9-14. DOI: 10.1016/J.Tsf.2005.03.043 |
0.849 |
|
| 2005 |
Stanley SK, Coffee SS, Ekerdt JG. Interactions of germanium atoms with silica surfaces Applied Surface Science. 252: 878-882. DOI: 10.1016/J.Apsusc.2005.01.149 |
0.835 |
|
| 2005 |
Stanley SK, Ekerdt JG. Interactions of Ge atoms with high-κ oxide dielectric surfaces Materials Research Society Symposium Proceedings. 879: 37-42. |
0.361 |
|
| 2005 |
Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Directed self assembly of Si and Ge nanocrystals on Hfo2 through kinetically driven patterning Aiche Annual Meeting, Conference Proceedings. 5265. |
0.302 |
|
| 2005 |
Fitzpatrick PR, Satyanarayana S, Sun Y, White JM, Ekerdt JG. CVD boron carbo-nitride as pore sealant for ultra low-K interlayer dielectrics Materials Research Society Symposium Proceedings. 863: 85-90. |
0.451 |
|
| 2004 |
Engbrecht ER, Sun YM, Junker KH, White JM, Ekerdt JG. Chemical vapor deposition boron carbo-nitride deposited using dimethylamine borane with ammonia and ethylene Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2152-2158. DOI: 10.1116/1.1778405 |
0.838 |
|
| 2004 |
Wang Q, Ekerdt JG, Gay D, Sun YM, White JM. Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films Applied Physics Letters. 84: 1380-1382. DOI: 10.1063/1.1650044 |
0.47 |
|
| 2004 |
Sun YM, Engbrecht ER, Bolom T, Cilino C, Sim JH, White JM, Ekerdt JG, Pfeifer K. Ultra thin tungsten nitride film growth on dielectric surfaces Thin Solid Films. 458: 251-256. DOI: 10.1016/J.Tsf.2003.11.303 |
0.845 |
|
| 2004 |
Zhu J, Ekerdt JG. Formation of {1 1 3} facetted Si hut clusters on thin Si 1-xC x films on Si(0 0 1) Journal of Crystal Growth. 261: 479-484. DOI: 10.1016/J.Jcrysgro.2003.09.043 |
0.426 |
|
| 2003 |
Resnick DJ, Dauksher WJ, Mancini D, Nordquist KJ, Bailey TC, Johnson S, Stacey N, Ekerdt JG, Willson CG, Sreenivasan SV, Schumaker N. Imprint lithography for integrated circuit fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2624-2631. DOI: 10.1116/1.1618238 |
0.329 |
|
| 2003 |
Resnick DJ, Mancini D, Dauksher WJ, Nordquist K, Bailey TC, Johnson S, Sreenivasan SV, Ekerdt JG, Willson CG. Improved step and flash imprint lithography templates for nanofabrication Microelectronic Engineering. 69: 412-419. DOI: 10.1016/S0167-9317(03)00329-0 |
0.372 |
|
| 2003 |
Johnson S, Resnick DJ, Mancini D, Nordquist K, Dauksher WJ, Gehoski K, Baker JH, Dues L, Hooper A, Bailey TC, Sreenivasan SV, Ekerdt JG, Willson CG. Fabrication of multi-tiered structures on step and flash imprint lithography templates Microelectronic Engineering. 67: 221-228. DOI: 10.1016/S0167-9317(03)00075-3 |
0.342 |
|
| 2003 |
Lemonds AM, White JM, Ekerdt JG. Surface science investigations of atomic layer deposition half-reactions using TaF5 and Si2H6 Surface Science. 538: 191-203. DOI: 10.1016/S0039-6028(03)00729-5 |
0.814 |
|
| 2003 |
Lemonds AM, White JM, Ekerdt JG. Surface chemistry of TaCl5 on polycrystalline Ta Surface Science. 527: 124-136. DOI: 10.1016/S0039-6028(02)02685-7 |
0.804 |
|
| 2003 |
Engbrecht ER, Cilino CJ, Junker KH, Sun YM, White JM, Ekerdt JG. Characterization of boron carbo-nitride films deposited by low temperature chemical vapor deposition Materials Research Society Symposium - Proceedings. 766: 351-356. |
0.845 |
|
| 2002 |
Bailey TC, Johnson SC, Sreenivasan SV, Ekerdt JG, Willson CG, Resnick DJ. Step and flash imprint lithography: An efficient nanoscale printing technology Journal of Photopolymer Science and Technology. 15: 481-486. DOI: 10.2494/Photopolymer.15.481 |
0.313 |
|
| 2002 |
Zhu JH, Leach WT, Ekerdt JG. Control of nucleation to realize high density Si nanoparticles on SiO2 thin films Materials Research Society Symposium - Proceedings. 704: 355-360. DOI: 10.1557/Proc-704-W10.10.1 |
0.81 |
|
| 2002 |
Leach WT, Zhu JH, Ekerdt JG, Mashiro S, Sakai J, Kawshima T. A model for heterogeneous nucleation and growth of silicon nanoparticles on silicon dioxide from disilane Materials Research Society Symposium - Proceedings. 686: 161-166. DOI: 10.1557/Proc-686-A6.3 |
0.788 |
|
| 2002 |
Lemonds AM, Kershen K, Bennett J, Pfeifer K, Sun YM, White JM, Ekerdt JG. Adhesion of Cu and low-k dielectric thin films with tungsten carbide Journal of Materials Research. 17: 1320-1328. DOI: 10.1557/Jmr.2002.0197 |
0.825 |
|
| 2002 |
Resnick DJ, Dauksher WJ, Mancini D, Nordquist KJ, Ainley E, Gehoski K, Baker JH, Bailey TC, Choi BJ, Johnson S, Sreenivasan SV, Ekerdt JG, Willson CG. High resolution templates for step and flash imprint lithography Journal of Microlithography, Microfabrication and Microsystems. 1: 284-289. DOI: 10.1117/1.1508410 |
0.347 |
|
| 2002 |
Dauksher WJ, Nordquist KJ, Mancini DP, Resnick DJ, Baker JH, Hooper AE, Talin AA, Bailey TC, Lemonds AM, Sreenivasan SV, Ekerdt JG, Willson CG. Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2857-2861. DOI: 10.1116/1.1520575 |
0.792 |
|
| 2002 |
Zhu J, Leach WT, Stanley SK, Ekerdt JG, Yan X. Growth of high-density Si nanoparticles on Si 3N 4 and SiO 2 thin films by hot-wire chemical vapor deposition Journal of Applied Physics. 92: 4695-4698. DOI: 10.1063/1.1509841 |
0.823 |
|
| 2002 |
Kirsch PD, Kang CS, Lozano J, Lee JC, Ekerdt JG. Electrical and spectroscopic comparison of HfO 2/Si interfaces on nitrided and un-nitrided Si(100) Journal of Applied Physics. 91: 4353-4363. DOI: 10.1063/1.1455155 |
0.657 |
|
| 2002 |
Bailey TC, Resnick DJ, Mancini D, Nordquist KJ, Dauksher WJ, Ainley E, Talin A, Gehoski K, Baker JH, Choi BJ, Johnson S, Colburn M, Meissl M, Sreenivasan SV, Ekerdt JG, et al. Template fabrication schemes for step and flash imprint lithography Microelectronic Engineering. 61: 461-467. DOI: 10.1016/S0167-9317(02)00462-8 |
0.331 |
|
| 2002 |
Engbrecht ER, Sun YM, Smith S, Pfiefer K, Bennett J, White JM, Ekerdt JG. Chemical vapor deposition growth and properties of TaCxNy Thin Solid Films. 418: 145-150. DOI: 10.1016/S0040-6090(02)00724-1 |
0.848 |
|
| 2002 |
Leach WT, Zhu JH, Ekerdt JG. Thermal desorption effects in chemical vapor deposition of silicon nanoparticles Journal of Crystal Growth. 243: 30-40. DOI: 10.1016/S0022-0248(02)01472-0 |
0.807 |
|
| 2002 |
Leach WT, Zhu J, Ekerdt JG. Cracking assisted nucleation in chemical vapor deposition of silicon nanoparticles on silicon dioxide Journal of Crystal Growth. 240: 415-422. DOI: 10.1016/S0022-0248(02)01076-X |
0.823 |
|
| 2001 |
Colburn M, Suez I, Choi BJ, Meissl M, Bailey T, Sreenivasan SV, Ekerdt JG, Willson CG. Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2685-2689. DOI: 10.1116/1.1420199 |
0.343 |
|
| 2001 |
Colburn M, Grot A, Choi BJ, Amistoso M, Bailey T, Sreenivasan SV, Ekerdt JG, Willson CG. Patterning nonflat substrates with a low pressure, room temperature, imprint lithography process Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2162-2172. DOI: 10.1116/1.1417543 |
0.323 |
|
| 2001 |
Kirsch PD, Ekerdt JG. Interfacial chemistry of the Sr/SioxNy/Si(100) nanostructure Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2222-2231. DOI: 10.1116/1.1379803 |
0.579 |
|
| 2001 |
Gavrilenko VI, Wu RQ, Downer MC, Ekerdt JG, Lim D, Parkinson P. Optical second-harmonic spectra of Si(001) with H and Ge adatoms: First-principles theory and experiment Physical Review B - Condensed Matter and Materials Physics. 63: 1653251-1653258. DOI: 10.1103/Physrevb.63.165325 |
0.38 |
|
| 2001 |
Kirsch PD, Ekerdt JG. Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide Journal of Applied Physics. 90: 4256-4264. DOI: 10.1063/1.1403675 |
0.629 |
|
| 2001 |
Sun YM, Lee SY, Lemonds AM, Engbrecht ER, Veldman S, Lozano J, White JM, Ekerdt JG, Emesh I, Pfeifer K. Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers Thin Solid Films. 397: 109-115. DOI: 10.1016/S0040-6090(01)01367-0 |
0.822 |
|
| 2001 |
Endle JP, Sun YM, Nguyen N, Madhukar S, Hance RL, White JM, Ekerdt JG. Iridium precursor pyrolysis and oxidation reactions and direct liquid injection chemical vapor deposition of iridium films Thin Solid Films. 388: 126-133. DOI: 10.1016/S0040-6090(01)00808-2 |
0.844 |
|
| 2001 |
Endle JP, Sun YM, Silverman J, Nguyen N, Cowley AH, White JM, Ekerdt JG. Titanium-aluminum nitride film growth and related chemistry using dimethylamino-based precursors Thin Solid Films. 385: 66-73. DOI: 10.1016/S0040-6090(00)01879-4 |
0.826 |
|
| 2001 |
Yong K, Ekerdt JG. Surface decomposition of triethylindium on InSb(100) Surface Science. 490: 13-19. DOI: 10.1016/S0039-6028(01)01346-2 |
0.363 |
|
| 2001 |
Sun Y, Lee SY, Lemonds A, Lozano J, Zhou J, Ekerdt JG, White JM, Imesh I. Surface and structure analysis of ultrathin multilayer structures for copper diffusion studies Surface and Interface Analysis. 32: 79-83. DOI: 10.1002/Sia.1010 |
0.422 |
|
| 2000 |
Lim D, Downer MC, Ekerdt JG, Arzate N, Mendoza BS, Gavrilenko VI, Wu RQ. Optical second harmonic spectroscopy of boron-reconstructed Si(001) Physical Review Letters. 84: 3406-9. PMID 11019101 DOI: 10.1103/Physrevlett.84.3406 |
0.36 |
|
| 2000 |
Jo SK, Kang JH, Yan X, White JM, Ekerdt JG, Keto JW, Lee J. Direct absorption of gas-phase atomic hydrogen by si(100): A narrow temperature window Physical Review Letters. 85: 2144-7. PMID 10970483 DOI: 10.1103/Physrevlett.85.2144 |
0.395 |
|
| 2000 |
Sun Y, Lee S, Engbrecht ER, Pfeifer K, Smith S, White JM, Ekerdt JG. Low Temperature Tungsten, Tungsten Carbide and Tantalum Carbide Film Growth Mrs Proceedings. 648. DOI: 10.1557/Proc-648-P6.43 |
0.549 |
|
| 2000 |
Sun YM, Lozano J, Mettlach N, Ekerdt JG, Madhukar S, Hance RL, White JM. PT film growth with tetra-kis(triflurophosphine)platinum Materials Research Society Symposium - Proceedings. 596: 103-108. DOI: 10.1557/Proc-596-103 |
0.462 |
|
| 2000 |
Sun Y, Yan X, Mettlach N, Endle JP, Kirsch PD, Ekerdt JG, Madhukar S, Hance RL, White JM. Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridium Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 10-16. DOI: 10.1116/1.582151 |
0.514 |
|
| 2000 |
Lim D, Downer MC, Ekerdt JG. Second-harmonic spectroscopy of bulk boron-doped Si(001) Applied Physics Letters. 77: 181-183. DOI: 10.1063/1.126917 |
0.465 |
|
| 2000 |
Mantese L, Selinidis K, Wilson PT, Lim D, Jiang YY, Ekerdt JG, Downer MC. In situ control and monitoring of doped and compositionally graded SiGe films using spectroscopic ellipsometry and second harmonic generation Applied Surface Science. 154: 229-237. DOI: 10.1016/S0169-4332(99)00386-4 |
0.457 |
|
| 2000 |
Gavrilenko VI, Wu RQ, Downer MC, Ekerdt JG, Lim D, Parkinson P. Optical second harmonic spectra of silicon-adatom surfaces: Theory and experiment Thin Solid Films. 364: 1-5. DOI: 10.1016/S0040-6090(99)00900-1 |
0.333 |
|
| 2000 |
McEllistrem MT, Jackson MS, Culp RD, Ekerdt JG. Ligand lability of triethylgallium on GaAs(100) Surface Science. 448: 117-130. DOI: 10.1016/S0039-6028(99)01213-3 |
0.33 |
|
| 2000 |
Yong K, Ekerdt JG. Surface reaction of triethylgallium and triethylantimony on GaSb(100)-(1 × 3) Surface Science. 448: 108-116. DOI: 10.1016/S0039-6028(99)01212-1 |
0.384 |
|
| 1999 |
Sun YM, Endle J, Smith K, Ekerdt JG, Hance RL, Alluri P, White JM. Metallorganic chemical vapor deposition of Ir films with iridium acetylacetonate and carbonyl precursors Materials Research Society Symposium - Proceedings. 541: 101-106. DOI: 10.1557/Proc-541-101 |
0.513 |
|
| 1999 |
Kang JH, Jo SK, Gong B, Parkinson P, Brown DE, White JM, Ekerdt JG. Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen Applied Physics Letters. 75: 91-93. DOI: 10.1063/1.124286 |
0.46 |
|
| 1999 |
Sun YM, Endle JP, Smith K, Whaley S, Mahaffy R, Ekerdt JG, White JM, Hance RL. Iridium film growth with iridium tris-acetylacetonate: Oxygen and substrate effects Thin Solid Films. 346: 100-107. DOI: 10.1016/S0040-6090(98)01458-8 |
0.835 |
|
| 1999 |
Yong K, Kirsch PD, Ekerdt JG. Surface reaction of trisdimethylaminoantimony on GaSb(100) Surface Science. 440: 187-195. DOI: 10.1016/S0039-6028(99)00792-X |
0.63 |
|
| 1999 |
Parkinson P, Lim D, Büngener R, Ekerdt J, Downer M. Second-harmonic spectroscopy of Ge/Si(001) and Si 1-x Ge x (001)/Si(001) Applied Physics B: Lasers and Optics. 68: 641-648. DOI: 10.1007/S003400050679 |
0.424 |
|
| 1999 |
Parkinson PS, Lim D, Büngener R, Ekerdt JG, Downer MC. Second-harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001) Applied Physics B: Lasers and Optics. 68: 641-648. |
0.67 |
|
| 1999 |
Sun YM, Endle JP, Ekerdt JG, Russell NM, Healy MD, White JM. Aluminum titanium nitride films grown with multiple precursors Materials Science in Semiconductor Processing. 2: 253-261. |
0.83 |
|
| 1998 |
Sun YM, Endle J, Ekerdt JG, Russell NM, Healy MD, White JM. Low pressure CVD growth of AlxTi1-xN films with tetrakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) precursors Materials Research Society Symposium - Proceedings. 495: 165-170. DOI: 10.1557/Proc-495-165 |
0.505 |
|
| 1998 |
Wilson PT, Lee YS, Jiang Y, Lim D, Kempf R, Bungener R, Hu XF, Dadap JI, Anderson MH, Ter Beek M, Xu Z, Russell NM, Ekerdt JG, Parkinson PS, Mishina ED, et al. New directions in surface spectroscopy enabled by ultrafast lasers Proceedings of Spie - the International Society For Optical Engineering. 3272: 51-56. DOI: 10.1117/12.307114 |
0.626 |
|
| 1998 |
Junker KH, Hess G, Ekerdt JG, White JM. Thermal and electron-driven chemistry of CCl4 on clean and hydrogen precovered Si(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 2995-3005. DOI: 10.1116/1.581451 |
0.414 |
|
| 1998 |
Endle JP, Sun YM, White JM, Ekerdt JG. X-ray photoelectron spectroscopy study of TiN films produced with tetrakis(dimethylamido)titanium and selected N-containing precursors on SiO2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1262-1267. DOI: 10.1116/1.581271 |
0.82 |
|
| 1998 |
Gong B, Jo S, Hess G, Parkinson P, Ekerdt JG. Hydrogen and disilane adsorption on low energy ion-roughened Si (100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 1473-1477. DOI: 10.1116/1.581172 |
0.338 |
|
| 1998 |
Sampson G, White J, Ekerdt J. Reactions of atomic deuterium with C2D5Br on Si(100) Surface Science. 411: 163-175. DOI: 10.1016/S0039-6028(98)00359-8 |
0.383 |
|
| 1998 |
Wong KC, McEllistrem MT, McBurnett BG, Culp RD, Cowley AH, Ekerdt JG. Direct evidence for the β-hydride elimination mechanism in the decomposition of triethylgallium on GaAs(100) Surface Science. 396: 260-265. DOI: 10.1016/S0039-6028(97)00674-2 |
0.317 |
|
| 1998 |
Ramani NC, Sullivan DL, Ekerdt JG, Jehng JM, Wachs IE. Selective oxidation of 1-butene over silica-supported Cr(VI), Mo(VI), and W(VI) oxides Journal of Catalysis. 176: 143-154. DOI: 10.1006/Jcat.1998.2056 |
0.305 |
|
| 1998 |
Ramani NC, Sullivan DL, Ekerdt JG. Isomerization of 1-butene over silica-supported Mo(VI), W(VI), and Cr(VI) Journal of Catalysis. 173: 105-114. DOI: 10.1006/Jcat.1997.1912 |
0.323 |
|
| 1998 |
Junker KH, Hess G, Ekerdt JG, White JM. Thermal and electron-driven chemistry of CCl4 on clean and hydrogen precovered Si(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 2995-3005. |
0.311 |
|
| 1997 |
Xu Z, Hu XF, Lim D, Ekerdt JG, Downer MC. Second harmonic spectroscopy of Si(001) surfaces: Sensitivity to surface hydrogen and doping, and applications to kinetic measurements Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1059-1064. DOI: 10.1116/1.589415 |
0.4 |
|
| 1997 |
Hess G, Russell M, Gong B, Parkinson P, Ekerdt JG. Hydrogen desorption from ion-roughened Si(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 1129-1134. DOI: 10.1116/1.580442 |
0.398 |
|
| 1997 |
Dadap JI, Xu Z, Hu XF, Downer MC, Russell NM, Ekerdt JG, Aktsipetrov OA. Second-harmonic spectroscopy of a Si(001) surface during calibrated variations in temperature and hydrogen coverage Physical Review B - Condensed Matter and Materials Physics. 56: 13367-13379. DOI: 10.1103/Physrevb.56.13367 |
0.4 |
|
| 1997 |
Hu XF, Xu Z, Lim D, Downer MC, Parkinson PS, Gong B, Hess G, Ekerdt JG. In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001) Applied Physics Letters. 71: 1376-1378. DOI: 10.1063/1.119927 |
0.409 |
|
| 1997 |
Hess G, Parkinson P, Gong B, Xu Z, Lim D, Downer M, John S, Banerjee S, Ekerdt JG, Jo SK. Evolution of subsurface hydrogen from boron-doped Si(100) Applied Physics Letters. 71: 2184-2186. DOI: 10.1063/1.119375 |
0.384 |
|
| 1997 |
Schwitzgebel J, Ekerdt JG, Sunada F, Lindquist S, Heller A. Increasing the efficiency of the photocatalytic oxidation of organic films on aqueous solutions by reactively coating the TiO2 photocatalyst with a chlorinated silicone Journal of Physical Chemistry B. 101: 2621-2624. DOI: 10.1021/Jp9624921 |
0.353 |
|
| 1997 |
Jo S, Gong B, Hess G, White J, Ekerdt J. Low-temperature Si(100) etching: facile abstraction of SiH3(a) by thermal hydrogen atoms Surface Science. 394: L162-L167. DOI: 10.1016/S0039-6028(97)00801-7 |
0.439 |
|
| 1997 |
Xu Z, Hu XF, Ekerdt JG, Downer MC. Second harmonic azimuthal anisotropy spectroscopy and doping dependence at hydrogen-covered Si(001) surfaces Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 12: 87-88. |
0.321 |
|
| 1997 |
Jo SK, Gong B, Hess G, White JM, Ekerdt JG. Low-temperature Si(100) etching: Facile abstraction of SiH3(a) by thermal hydrogen atoms Surface Science. 394. |
0.331 |
|
| 1997 |
Hu XF, Xu Z, Parkinson PS, Lim D, Ekerdt JG, Downer MC. In situ optical second harmonic monitoring of hydrogen adsorption and desorption kinetics during epitaxial growth on Si(001) Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 487-488. |
0.69 |
|
| 1996 |
Ekerdt JG, Sun YM, Szabo A, Szulczewski GJ, White JM. Role of Surface Chemistry in Semiconductor Thin Film Processing. Chemical Reviews. 96: 1499-1518. PMID 11848800 DOI: 10.1021/Cr950236Z |
0.45 |
|
| 1996 |
Neumayer DA, Carmalt CJ, Arendt MF, White JM, Cowley AH, Jones RA, Ekerdt JG. New single source precursor approach to gallium and aluminum nitride Materials Research Society Symposium - Proceedings. 395: 85-90. DOI: 10.1557/Proc-395-85 |
0.517 |
|
| 1996 |
Neumayer DA, Ekerdt JG. Growth of group III nitrides. A review of precursors and techniques Chemistry of Materials. 8: 9-25. DOI: 10.1021/Cm950108R |
0.432 |
|
| 1996 |
Russell NM, Ekerdt JG. Kinetics of hydrogen desorption from germanium-covered Si(100) Surface Science. 369: 51-68. DOI: 10.1016/S0039-6028(96)00888-6 |
0.411 |
|
| 1996 |
Russell NM, Ekerdt JG. Nonlinear parameter estimation technique for kinetic analysis of thermal desorption data Surface Science. 364: 199-218. DOI: 10.1016/0039-6028(96)00593-6 |
0.306 |
|
| 1996 |
Dadap JI, Hu XF, Anderson MH, Beek Mt, Aktsipetrov OA, Russell NM, Ekerdt JG, Downer MC. Applications of Femtosecond Lasers to Nonlinear Spectroscopy and Process Control of Si(001) Interfaces Springer Series in Chemical Physics. 62: 452-454. DOI: 10.1007/978-3-642-80314-7_197 |
0.356 |
|
| 1996 |
Ekerdt JG, Sun YM, Szabo A, Szulczewski GJ, White JM. Role of surface chemistry in semiconductor thin film processing Chemical Reviews. 96: 1499-1517. |
0.341 |
|
| 1995 |
Heitzinger JM, Ekerdt JG. Chemical reactions of triethylantimony on GaAs(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 2772-2780. DOI: 10.1116/1.579703 |
0.368 |
|
| 1995 |
Mahajan A, Kellerman BK, Heitzinger JM, Banerjee S, Tasch A, White JM, Ekerdt JG. Surface chemistry of diethylsilane and diethylgermane on Ge(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1461-1468. DOI: 10.1116/1.579687 |
0.421 |
|
| 1995 |
Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ. Adsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1819-1825. DOI: 10.1116/1.579665 |
0.438 |
|
| 1995 |
Dadap JI, Hu XF, Russell NM, Ekerdt JG, Lowell JK, Downer MC. Analysis of Second-Harmonic Generation by Unamplified, High-Repetition-Rate, Ultrashort Laser Pulses at Si(001) Interfaces Ieee Journal On Selected Topics in Quantum Electronics. 1: 1145-1155. DOI: 10.1109/2944.488693 |
0.346 |
|
| 1995 |
Heitzinger JM, Jackson MS, Ekerdt JG. Comparison of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on GaAs(100) Applied Physics Letters. 352. DOI: 10.1063/1.114210 |
0.347 |
|
| 1995 |
Lakhotia V, Neumayer DA, Cowley AH, Jones RA, Ekerdt JG. GaN film growth using single-source precursors Chemistry of Materials. 7: 546-552. DOI: 10.1021/Cm00051A016 |
0.432 |
|
| 1995 |
Kim DS, Ostromecki M, Wachs IE, Kohler SD, Ekerdt JG. Preparation and characterization of WO3/SiO2 catalysts Catalysis Letters. 33: 209-215. DOI: 10.1007/Bf00814225 |
0.329 |
|
| 1994 |
Mahajan A, Kellerman BK, Russell NM, Banerjee S, Campion A, Ekerdt JG, Tasch A, White JM, Bonser DJ. Surface chemistry of diethylsilane and diethylgermane on Si(100): An atomic layer epitaxy approach Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 2265-2270. DOI: 10.1116/1.579127 |
0.454 |
|
| 1994 |
Johannes JE, Ekerdt JG. Resonance enhanced multiphonon ionization of silicon produced during disilane pyrolysis Journal of Applied Physics. 76: 3144-3148. DOI: 10.1063/1.357497 |
0.351 |
|
| 1994 |
Lakhotia V, Heitzinger JM, Cowley AH, Jones RA, Ekerdt JG. Growth and Characterization of GaAs Films from Tris(di-tert-butylarsino)gallane Chemistry of Materials. 6: 871-874. DOI: 10.1021/Cm00042A028 |
0.48 |
|
| 1994 |
Roark RD, Narayanan CR, Sullivan DL, Ekerdt JG. Formation of molybdenum and tungsten cation pairs on silica from cyclopentadienylmolybdenum di- and tricarbonyl dimer, cyclopentadienyltungsten di- and tricarbonyl dimer, and 1,2-bis(cyclopentadienyl)-1,1,2,2-tetracarbonylmolybdenumtungsten Chemistry of Materials. 6: 739-743. DOI: 10.1021/Cm00042A007 |
0.342 |
|
| 1994 |
Miller JE, Ekerdt JG. Chemical beam epitaxy and characterization of GaAs from bis(tert-butylarsenido)dimethylgallane dimer and bis(tert-butylarsenido)diethylgallane dimer Chemistry of Materials. 6: 343-348. DOI: 10.1021/Cm00039A016 |
0.467 |
|
| 1994 |
Asami S, Russell NM, Mahajan A, Steiner PA, Bonser DJ, Fretwell J, Bannerjee S, Tasch A, White JM, Ekerdt JG. Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6 Applied Surface Science. 359-366. DOI: 10.1016/0169-4332(94)90242-9 |
0.464 |
|
| 1994 |
Jackson MS, Heitzinger JM, Nail JW, Culp RD, Ekerdt JG. A temperature-programmed desorption/X-ray photoelectron spectroscopy study of ditertiarybutylarsine on GaAs(100) Applied Surface Science. 81: 195-201. DOI: 10.1016/0169-4332(94)00170-7 |
0.32 |
|
| 1994 |
Heitzinger JM, White JM, Ekerdt JG. Mechanisms of GaAs atomic layer epitaxy: a review of progress Surface Science. 299: 892-908. DOI: 10.1016/0039-6028(94)90705-6 |
0.333 |
|
| 1994 |
Lakhotia V, Heitzinger JM, Cowley AH, Jones RA, Ekerdt JG. Growth and characterization of GaAs films from tris(di-tert-butylarsino)gallane Chemistry of Materials. 6: 871-874. |
0.413 |
|
| 1993 |
Sun YM, Sloan DW, Huett T, White JM, Ekerdt JG. Electron induced adsorption, desorption and decomposition of ammonia on GaAs(100) Surface Science. 295. DOI: 10.1016/0039-6028(93)90172-G |
0.307 |
|
| 1992 |
Lapinski MP, Ekerdt JG. In situ Fourier transform infrared study of ethylene surface reaction kinetics on alumina-supported nickel Journal of Physical Chemistry. 96: 5069-5077. DOI: 10.1021/J100191A061 |
0.351 |
|
| 1992 |
Miller JE, Mardones MA, Nail JW, Cowley AH, Jones RA, Ekerdt JG. Pyrolysis studies of the single-source GaAs precursors [Me2Ga(μ-As-i-Pr2)]3, [Me2Ga(μ-AsMe2)]3, [Me2Ga(μ-As-t-Bu2)]2, and [Et2Ga(μ-As-t-Bu2)]2 Chemistry of Materials. 4: 447-452. DOI: 10.1021/Cm00020A038 |
0.338 |
|
| 1992 |
Miller JE, Ekerdt JG. Growth of epitaxial (100) gallium arsenide films using the single-source precursor [Me2Ga(.mu.-t-Bu2As)]2 Chemistry of Materials. 4: 7-9. DOI: 10.1021/Cm00019A003 |
0.404 |
|
| 1992 |
Ekerdt JG, Sun YM, Jackson MS, Lakhotia V, Pacheco KA, Koschmieder SU, Cowley AH, Jones RA. Chemical beam epitaxy of GaAs films using single-source precursors Journal of Crystal Growth. 124: 158-164. DOI: 10.1016/0022-0248(92)90453-P |
0.398 |
|
| 1992 |
Roark RD, Kohler SD, Ekerdt JG, Du Kim S, Wachs IE. Monolayer dispersion of molybdenum on silica Catalysis Letters. 16: 77-83. DOI: 10.1007/Bf00764357 |
0.312 |
|
| 1992 |
Roark RD, Kohler SD, Ekerdt JG. Role of silanol groups in dispersing Mo(VI) on silica Catalysis Letters. 16: 71-76. DOI: 10.1007/Bf00764356 |
0.33 |
|
| 1991 |
Williams CC, Ekerdt JG, Jehng JM, Hardcastle FD, Wachs IE. A Raman and ultraviolet diffuse reflectance spectroscopic investigation of alumina-supported molybdenum oxide Journal of Physical Chemistry. 95: 8791-8797. DOI: 10.1021/J100175A068 |
0.363 |
|
| 1990 |
Jones RA, Cowley AH, Ekerdt JG. Single Source Precursors for III-V OMCVD Growth and Pyrolysis Studies Mrs Proceedings. 204. DOI: 10.1557/Proc-204-73 |
0.392 |
|
| 1990 |
Lapinski MP, Ekerdt JG. Infrared identification of adsorbed surface species on Ni/SiO2 and Ni/Al2O3 from ethylene and acetylene adsorption Journal of Physical Chemistry. 94: 4599-4610. DOI: 10.1021/J100374A044 |
0.347 |
|
| 1990 |
Jackson NB, Ekerdt JG. The surface characteristics required for isosynthesis over zirconium dioxide and modified zirconium dioxide Journal of Catalysis. 126: 31-45. DOI: 10.1016/0021-9517(90)90044-K |
0.309 |
|
| 1989 |
Silver RG, Hou CJ, Ekerdt JG. The role of lattice anion vacancies in the activation of CO and as the catalytic site for methanol synthesis over zirconium dioxide and yttria-doped zirconium dioxide Journal of Catalysis. 118: 400-416. DOI: 10.1016/0021-9517(89)90327-8 |
0.303 |
|
| 1989 |
Anderson KG, Ekerdt JG. Hydrocarbon surface fragments over Co SiO2: An FTIR study Journal of Catalysis. 116: 556-567. DOI: 10.1016/0021-9517(89)90121-8 |
0.35 |
|
| 1988 |
Cowley AH, Benac BL, Ekerdt JG, Jones RA, Kidd KB, Lee JY, Miller JE. Organometallic chemical vapor deposition of III/V compound semiconductors with novel organometallic precursors. Journal of the American Chemical Society. 110: 6248-9. PMID 22148811 DOI: 10.1021/Ja00226A051 |
0.395 |
|
| 1988 |
Jones RA, Cowley AH, Benac BL, Kidd KB, Ekerdt JG, Miller JE. Organometallic Chemical Vapor Deposition of Gaas Using Novel Organometallic Precursors Mrs Proceedings. 131. DOI: 10.1557/Proc-131-51 |
0.469 |
|
| 1988 |
Lapinski MP, Ekerdt JG. Infrared evidence for ethylidyne formation on alumina-supported nickel Journal of Physical Chemistry. 92: 1708-1712. DOI: 10.1021/J100318A003 |
0.355 |
|
| 1986 |
Campione TJ, Ekerdt JG. Fourier transform infrared study of butene adsorption and reaction on a silica-supported nickel catalyst Journal of Catalysis. 102: 64-79. DOI: 10.1016/0021-9517(86)90141-7 |
0.338 |
|
| 1985 |
He MY, White JM, Ekerdt JG. CO and CO2 hydrogenation over metal oxides: a comparison of ZnO, TiO2 and ZrO2 Journal of Molecular Catalysis. 30: 415-430. DOI: 10.1016/0304-5102(85)85051-3 |
0.3 |
|
| 1985 |
Fang SM, White JM, Campione TJ, Ekerdt JG. CO hydrogenation and adsorption studies on supported-nickel SMSI catalysts Journal of Catalysis. 96: 491-498. DOI: 10.1016/0021-9517(85)90317-3 |
0.317 |
|
| 1984 |
He MY, Ekerdt JG. Temperature-programmed studies of the adsorption of synthesis gas on zirconium dioxide Journal of Catalysis. 87: 238-254. DOI: 10.1016/0021-9517(84)90184-2 |
0.332 |
|
| 1984 |
He MY, Ekerdt JG. Methanol formation on zirconium dioxide Journal of Catalysis. 90: 17-23. DOI: 10.1016/0021-9517(84)90079-4 |
0.332 |
|
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