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Suzanne Mohney - Publications

Affiliations: 
Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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Year Citation  Score
2021 Walter TN, Oliver N, Mohney SE. Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS and fabrication of top-edge hybrid contacts for field-effect transistors. Nanotechnology. 32: 025203. PMID 33055368 DOI: 10.1088/1361-6528/abbb4a  0.394
2020 Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady RW, Cooley KA, McClellan CJ, Vaziri S, Passarello D, Mohney SE, Toney MF, Sood AK, Salleo A, Pop E. Uncovering the Effects of Metal Contacts on Monolayer MoS. Acs Nano. PMID 32905703 DOI: 10.1021/Acsnano.0C03515  0.346
2020 Kim D, Du R, Yu SY, Yin YW, Dong S, Li Q, Mohney SE, Li X, Tadigadapa S. Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes. Nanotechnology. PMID 32470964 DOI: 10.1088/1361-6528/Ab97D2  0.715
2020 Chen W, Talreja D, Eichfeld D, Mahale P, Nova NN, Cheng HY, Russell JL, Yu SY, Poilvert N, Mahan G, Mohney SE, Crespi VH, Mallouk TE, Badding JV, Foley B, et al. Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices. Acs Nano. PMID 32223186 DOI: 10.1021/Acsnano.9B09487  0.722
2020 Molina A, Shallenberger JR, Mohney SE. Vapor phase passivation of (100) germanium surfaces with HBr Journal of Vacuum Science & Technology A. 38: 023208. DOI: 10.1116/1.5141941  0.779
2020 Chen Y, Liu Y, Moradifar P, Glaid AJ, Russell JL, Mahale P, Yu S, Culp TE, Kumar M, Gomez ED, Mohney SE, Mallouk TE, Alem N, Badding JV, Liu Y. Quantum transport in three-dimensional metalattices of platinum featuring an unprecedentedly large surface area to volume ratio Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.035201  0.724
2020 Walter TN, Cooley KA, Domask AC, Mohney SE. Nickel diffusion into MoS2 and the effect of annealing on contact resistance Materials Science in Semiconductor Processing. 107: 104850. DOI: 10.1016/J.Mssp.2019.104850  0.819
2019 Cooley KA, Alsaadi R, Gurunathan RL, Domask AC, Kerstetter L, Saidi WA, Mohney SE. Room-temperature epitaxy of metal thin films on tungsten diselenide Journal of Crystal Growth. 505: 44-51. DOI: 10.1016/J.Jcrysgro.2018.09.040  0.801
2018 Simchi H, Cooley KA, Ding Z, Molina A, Mohney SE. Novel Sn-based Contact Structure for GeTe Phase Change Materials. Acs Applied Materials & Interfaces. PMID 29668246 DOI: 10.1021/Acsami.8B02933  0.823
2018 Ji X, Cheng HY, Grede AJ, Molina A, Talreja D, Mohney SE, Giebink NC, Badding JV, Gopalan V. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics Apl Materials. 6: 046105. DOI: 10.1063/1.5020814  0.79
2018 Domask AC, Cooley KA, Kabius B, Abraham M, Mohney SE. Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide Crystal Growth & Design. 18: 3494-3501. DOI: 10.1021/Acs.Cgd.8B00257  0.794
2017 Liu Y, Kempinger S, He R, Day T, Moradifar P, Yu SY, Russell J, Torres V, Xu P, Mallouk TE, Mohney S, Alem N, Samarth N, Badding JV. Confined Chemical Fluid Deposition of Ferromagnetic Metalattices. Nano Letters. PMID 29236505 DOI: 10.1021/Acs.Nanolett.7B04633  0.721
2017 Abraham M, Mohney SE. Annealed Ag contacts to MoS2 field-effect transistors Journal of Applied Physics. 122: 115306. DOI: 10.1063/1.4991961  0.562
2017 Aldosari HM, Cooley KA, Yu S, Kragh-Buetow KC, Mohney SE. Thermal stability of low-resistance Au Ohmic contacts to GeTe Thin Solid Films. 621: 145-150. DOI: 10.1016/J.Tsf.2016.11.038  0.779
2017 Ji X, Page RL, Chaudhuri S, Liu W, Yu S, Mohney SE, Badding JV, Gopalan V. Optoelectronic Fibers: Single-Crystal Germanium Core Optoelectronic Fibers (Advanced Optical Materials 1/2017) Advanced Optical Materials. 5. DOI: 10.1002/Adom.201770004  0.688
2016 Aldosari HM, Simchi H, Ding Z, Cooley KA, Yu SY, Mohney SE. Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study. Acs Applied Materials & Interfaces. 8: 34802-34809. PMID 27998133 DOI: 10.1021/Acsami.6B07412  0.779
2016 Ji X, Lei S, Yu S, Cheng HY, Liu W, Poilvert N, Xiong Y, Dabo I, Mohney SE, Badding JV, Gopalan V. Single-Crystal Silicon Optical Fiber by Direct Laser Crystallization Acs Photonics. 4: 85-92. DOI: 10.1021/Acsphotonics.6B00584  0.717
2016 Ji X, Page RL, Chaudhuri S, Liu W, Yu SY, Mohney SE, Badding JV, Gopalan V. Single-Crystal Germanium Core Optoelectronic Fibers Advanced Optical Materials. DOI: 10.1002/Adom.201600592  0.689
2015 Kragh-Buetow KC, Okojie RS, Lukco D, Mohney SE. Characterization of tungsten-nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105019  0.803
2014 Choi WH, You G, Abraham M, Yu SY, Liu J, Wang L, Xu J, Mohney SE. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes Journal of Applied Physics. 116. DOI: 10.1063/1.4885455  0.762
2014 Agrawal A, Lin J, Barth M, White R, Zheng B, Chopra S, Gupta S, Wang K, Gelatos J, Mohney SE, Datta S. Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts Applied Physics Letters. 104. DOI: 10.1063/1.4868302  0.744
2014 Raghavan AS, Palmer TA, Kragh-Buetow KC, Domask AC, Reutzel EW, Mohney SE, Debroy T. Employing microsecond pulses to form laser-fired contacts in photovoltaic devices Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2523  0.776
2013 Yearsley JD, Lin JC, Mohney SE. Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment Ieee Electron Device Letters. 34: 1184-1186. DOI: 10.1109/Led.2013.2274526  0.722
2012 Eichfeld CM, Gerstl SS, Prosa T, Ke Y, Redwing JM, Mohney SE. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology. 23: 215205. PMID 22552162 DOI: 10.1088/0957-4484/23/21/215205  0.767
2012 Abraham M, Weng X, Hyuck Choi W, Downey BP, Mohney SE. Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4770365  0.753
2012 Yearsley JD, Lin JC, Hwang E, Datta S, Mohney SE. Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs Journal of Applied Physics. 112. DOI: 10.1063/1.4748178  0.725
2012 Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680  0.747
2012 Dellas NS, Schuh CJ, Mohney SE. Silicide formation in contacts to Si nanowires Journal of Materials Science. 47: 6189-6205. DOI: 10.1007/S10853-012-6549-1  0.801
2011 Tan Z, Zhang Y, Xie C, Su H, Liu J, Zhang C, Dellas N, Mohney SE, Wang Y, Wang J, Xu J. Near-band-edge electroluminescence from heavy-metal-free colloidal quantum dots. Advanced Materials (Deerfield Beach, Fla.). 23: 3553-8. PMID 21732559 DOI: 10.1002/Adma.201100719  0.75
2011 Gao S, Zhang C, Liu Y, Su H, Wei L, Huang T, Dellas N, Shang S, Mohney SE, Wang J, Xu J. Lasing from colloidal InP/ZnS quantum dots. Optics Express. 19: 5528-35. PMID 21445191 DOI: 10.1364/Oe.19.005528  0.756
2011 Zhang Y, Xie C, Su H, Liu J, Pickering S, Wang Y, Yu WW, Wang J, Wang Y, Hahm JI, Dellas N, Mohney SE, Xu J. Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes. Nano Letters. 11: 329-32. PMID 21188964 DOI: 10.1021/Nl1021442  0.752
2011 Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144  0.767
2011 Ye G, Shi K, Burke R, Redwing JM, Mohney SE. Ti/Al ohmic contacts to n-type GaN nanowires Journal of Nanomaterials. 2011. DOI: 10.1155/2011/876287  0.332
2011 Downey BP, Flemish JR, Mohney SE. Investigation of polarity effects on the degradation of Pd/Ti/Pt ohmic contacts to p-type SiC under current stress Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3659730  0.689
2011 Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE, Mohney SE, Mayer TS. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135144  0.79
2011 Downey BP, Mohney SE, Flemish JR. Improved stability of Pd/Ti contacts to p-type SiC under continuous DC and pulsed DC current stress Journal of Electronic Materials. 40: 406-412. DOI: 10.1007/S11664-010-1482-Z  0.664
2010 Downey BP, Datta S, Mohney SE. Numerical study of reduced contact resistance via nanoscale topography at metal/semiconductor interfaces Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015010  0.711
2010 Dellas NS, Minassian S, Redwing JM, Mohney SE. Formation of nickel germanide contacts to Ge nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3533808  0.798
2010 Dellas NS, Liang J, Cooley BJ, Samarth N, Mohney SE. Electron microscopy of GaAs/MnAs core/shell nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3481066  0.774
2010 Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE. Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695. DOI: 10.1016/J.Sse.2010.03.006  0.801
2010 Downey BP, Mohney SE, Clark TE, Flemish JR. Reliability of aluminum-bearing ohmic contacts to SiC under high current density Microelectronics Reliability. 50: 1967-1972. DOI: 10.1016/J.Microrel.2010.07.007  0.687
2009 Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R  0.783
2009 Cooley BJ, Clark TE, Liu BZ, Eichfeld CM, Dickey EC, Mohney SE, Crooker SA, Samarth N. Growth of magneto-optically active (Zn,Mn)Se nanowires. Nano Letters. 9: 3142-6. PMID 19736970 DOI: 10.1021/Nl901272Q  0.758
2009 Mohammad AM, Abdullah AM, El-Anadouli BE, Mohney SE. Template-assisted growth of rhodium nanowire contacts to silicon nanowires International Journal of Nanomanufacturing. 4: 146-158. DOI: 10.1504/Ijnm.2009.028121  0.317
2009 Dormaier R, Zhang Q, Chou YC, Lange MD, Yang JM, Oki A, Mohney SE. Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2145-2152. DOI: 10.1116/1.3204983  0.79
2009 Dellas NS, Liu BZ, Eichfeld SM, Eichfeld CM, Mayer TS, Mohney SE. Orientation dependence of nickel silicide formation in contacts to silicon nanowires Journal of Applied Physics. 105. DOI: 10.1063/1.3115453  0.796
2009 Dormaier R, Zhang Q, Liu B, Chou YC, Lange MD, Yang JM, Oki AK, Mohney SE. Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Journal of Applied Physics. 105. DOI: 10.1063/1.3068378  0.801
2009 Downey BP, Flemish JR, Liu BZ, Clark TE, Mohney SE. Current-induced degradation of nickel ohmic contacts to SiC Journal of Electronic Materials. 38: 563-568. DOI: 10.1007/S11664-008-0612-3  0.699
2008 Dellas NS, Meinert K, Mohney SE. Laser-enhanced electroless plating of silver seed layers for selective electroless copper deposition Journal of Laser Applications. 20: 218-223. DOI: 10.2351/1.2995767  0.762
2008 Lysczek EM, Mohney SE. Selective deposition of ohmic contacts to p-InGaAs by electroless plating Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2958297  0.363
2008 Miller MA, Mohney SE. High and low temperature behavior of Ohmic contacts to AlGaN/GaN heterostructures with a thin GaN cap Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1883-1886. DOI: 10.1116/1.3006018  0.347
2008 Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE. Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1592-1596. DOI: 10.1116/1.2939256  0.811
2007 Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248  0.769
2007 Liu B, Wang Y, Dilts S, Mayer TS, Mohney SE. Silicidation of silicon nanowires by platinum. Nano Letters. 7: 818-24. PMID 17295545 DOI: 10.1021/nl062393r  0.311
2007 Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201  0.306
2006 Mohney SE, Wang SH, Lysczek EM, Robinson JA. Ohmic contacts to p-type III-V semiconductors for the base of heterojunction bipolar transistors Ecs Transactions. 3: 47-56. DOI: 10.1149/1.2357195  0.303
2006 Wang SH, Lysczek EM, Liu B, Robinson JA, Mohney SE. Shallow and thermally stable ohmic contacts to p-InAsP Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2184928  0.353
2006 Lysczek EM, Robinson JA, Mohney SE. Ohmic contacts to p-type InAs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 134: 44-48. DOI: 10.1016/j.mseb.2006.07.016  0.336
2005 Dilts SM, Mohmmad A, Lew KK, Redwing JM, Mohney SE. Fabrication and electrical characterization of silicon nanowire arrays Materials Research Society Symposium Proceedings. 832: 287-292. DOI: 10.1557/Proc-832-F9.10  0.351
2005 Redwing JM, Dilts SM, Lew KK, Cranmer A, Mohney SE. High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.632745  0.317
2005 Wang SH, Robinson JA, Mohney SE, Bennett BR. Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 293-297. DOI: 10.1116/1.1865119  0.338
2005 Readinger ED, Robinson JA, Mohney SE, Therrien R. Thermal stability of metallizations on GaN/AlxGa 1-xN/GaN heterostructures Semiconductor Science and Technology. 20: 389-397. DOI: 10.1088/0268-1242/20/5/011  0.337
2005 Wang SH, Lysczek EM, Liu B, Mohney SE, Xu Z, Nagarajan R, Edgar JH. CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters. 87. DOI: 10.1063/1.2001760  0.361
2005 Robinson JA, Mohney SE. A low-resistance, thermally stable Ohmic contact to n-GaSb Journal of Applied Physics. 98. DOI: 10.1063/1.1989429  0.366
2005 Eichfeld CM, Horsey MA, Mohney SE, Adedeji AV, Williams JR. Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC Thin Solid Films. 485: 207-211. DOI: 10.1016/j.tsf.2005.04.005  0.783
2005 Mohney SE, Wang Y, Cabassi MA, Lew KK, Dey S, Redwing JM, Mayer TS. Measuring the specific contact resistance of contacts to semiconductor nanowires Solid-State Electronics. 49: 227-232. DOI: 10.1016/J.Sse.2004.08.006  0.665
2005 Bogart TE, Dey S, Lew KK, Mohney SE, Redwing JM. Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes Advanced Materials. 17: 114-117. DOI: 10.1002/Adma.200400373  0.568
2004 Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Compositional shift in Al[sub x]Ga[sub 1−x]N beneath annealed metal contacts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 654. DOI: 10.1116/1.1676683  0.66
2004 Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Ohmic contacts to p-type Al 0.45Ga 0.55N Journal of Applied Physics. 96: 7325-7331. DOI: 10.1063/1.1814169  0.672
2003 Mohammad AM, Dey S, Lew KK, Redwing JM, Mohney SE. Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598966  0.629
2003 Wang SH, Mohney SE, Hull BA, Bennett BR. Design of a shallow thermally stable ohmic contact to p-type InGaSb Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 633. DOI: 10.1116/1.1545731  0.684
2003 Lysczek EM, Mohney SE, Wittberg TN. Shallow ohmic contacts to p-type InAs Electronics Letters. 39: 1866-1868. DOI: 10.1049/el:20031154  0.357
2002 Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R, Pophristic M. Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.2  0.661
2002 Wang SH, Mohney SE, Birkhahn R. Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air Journal of Applied Physics. 91: 3711-3716. DOI: 10.1063/1.1448885  0.327
2002 Mohney SE, Hull BA, Lin JY, Crofton J. Morphological study of the Al-Ti ohmic contact to p-type SiC Solid-State Electronics. 46: 689-693. DOI: 10.1016/S0038-1101(01)00327-6  0.7
2001 Schweitz KO, Pribicko TG, Mohney SE, Isaacs-Smith TF, Williams J, Pophristic M, Gotthold D, Birkhahn R, Ferguson I. The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al0.4Ga0.6N Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E6.2  0.331
2001 Wang PK, Schweitz KO, Pribicko TG, Mohney SE, Pophristic M, Gotthold D. Ohmic contacts to n-type AlGaN and nitride HEMT epilayers 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 199-200. DOI: 10.1109/ISDRS.2001.984474  0.326
2001 Readinger ED, Luther BP, Mohney SE, Piner EL. Environmental aging of Schottky contacts to n-AlGaN Journal of Applied Physics. 89: 7983-7987. DOI: 10.1063/1.1370367  0.301
2000 Kwak JS, Mohney SE, Lin JY, Kern R. Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability Semiconductor Science and Technology. 15: 756-760. DOI: 10.1088/0268-1242/15/7/316  0.323
2000 Hull BA, Mohney SE, Venugopalan HS, Ramer JC. Influence of oxygen on the activation of p-type GaN Applied Physics Letters. 76: 2271-2273. DOI: 10.1063/1.126318  0.586
1999 Ren Y, Micovic M, Cai WZ, Mohney S, Lord SM, Miller DL, Mayer TS. Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy Journal of Electronic Materials. 28: 887-893. DOI: 10.1007/S11664-999-0215-7  0.373
1998 Luther BP, Mohney SE, Jackson TN. Titanium and titanium nitride contacts to n-type gallium nitride Semiconductor Science and Technology. 13: 1322-1327. DOI: 10.1088/0268-1242/13/11/017  0.365
1998 DeLucca JM, Venugopalan HS, Mohney SE, Karlicek RF. Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN Applied Physics Letters. 73: 3402-3404. DOI: 10.1063/1.122756  0.372
1998 Oder TN, Williams JR, Bozack MJ, Iyer V, Mohney SE, Crofton J. High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC Journal of Electronic Materials. 27: 324-329. DOI: 10.1007/S11664-998-0409-4  0.353
1996 Luther BP, Mohney SE, Jackson TN, Asif Khan M, Chen Q, Yang JW. Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride Mrs Proceedings. 449. DOI: 10.1557/PROC-449-1097  0.328
1996 Delucca JM, Mohney SE. Approaches to High Temperature Contacts to Silicon Carbide Mrs Proceedings. 423. DOI: 10.1557/PROC-423-137  0.315
1995 Mohney S, Luther B, Jackson T, Khan M. Metallurgical Study of Contacts to Gallium Nitride Mrs Proceedings. 395. DOI: 10.1557/PROC-395-843  0.307
1989 Guckel H, Sniegowski JJ, Christenson TR, Mohney S, Kelly TF. Fabrication of micromechanical devices from polysilicon films with smooth surfaces Sensors and Actuators. 20: 117-122. DOI: 10.1016/0250-6874(89)87109-4  0.359
Low-probability matches (unlikely to be authored by this person)
2013 Raghavan A, Palmer TA, Domask A, Mohney S, Reutzel EW, DebRoy T. Role of processing parameters on morphology, resistance and composition of laser fired contacts Proceedings of Spie - the International Society For Optical Engineering. 8826. DOI: 10.1117/12.2023978  0.297
2010 Adedeji AV, Ahyi AC, Williams JR, Mohney SE, Scofield JD. Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 °c Solid-State Electronics. 54: 736-740. DOI: 10.1016/j.sse.2010.03.010  0.296
2009 Dimoulas A, Toriumi A, Mohney SE. Source and Drain Contacts for Germanium and III–V FETs for Digital Logic Mrs Bulletin. 34: 522-529. DOI: 10.1557/MRS2009.140  0.294
1997 Venugopalan HS, Mohney SE, Luther BP, DeLucca JM, Wolter SD, Redwing JM, Bulman GE. Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride Mrs Proceedings. 468. DOI: 10.1557/PROC-468-431  0.291
2019 Walter TN, Lee S, Zhang X, Chubarov M, Redwing JM, Jackson TN, Mohney SE. Atomic layer deposition of ZnO on MoS2 and WSe2 Applied Surface Science. 480: 43-51. DOI: 10.1016/J.Apsusc.2019.02.182  0.29
2006 Miller MA, Mohney SE, Nikiforov A, Cargill GS, Bogart KHA. Ohmic contacts to plasma etched n-Al 0.58Ga 0.42N Applied Physics Letters. 89. DOI: 10.1063/1.2357867  0.289
1999 Venugopalan HS, Mohney SE, DeLucca JM, Molnar RJ. Approaches to designing thermally stable Schottky contacts to n-GaN Semiconductor Science and Technology. 14: 757-761. DOI: 10.1088/0268-1242/14/9/303  0.286
2005 Wang SH, Mohney SE, Robinson JA. Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs Semiconductor Science and Technology. 20: 755-760. DOI: 10.1088/0268-1242/20/8/018  0.283
2003 Mohney SE, Hull BA, Wang JH. Contacts to group 111 nitride semiconductor alloys 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 400. DOI: 10.1109/ISDRS.2003.1272153  0.277
1998 Venugopalan HS, Mohney SE, DeLucca JM, Luther BP, Bulman GE. Morphology of nickel and nickel/gold contacts to gallium nitride Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 607-610. DOI: 10.1116/1.581076  0.275
2008 Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059  0.272
1998 Venugopalan HS, Mohney SE. Thermally stable rhenium Schottky contacts to n-GaN Applied Physics Letters. 73: 1242-1244. DOI: 10.1063/1.122140  0.264
2016 Gad KM, Vossing D, Richter A, Rayner B, Reindl LM, Mohney SE, Kasemann M. Ultrathin titanium dioxide nanolayers by atomic layer deposition for surface passivation of crystalline silicon Ieee Journal of Photovoltaics. 6: 649-653. DOI: 10.1109/JPHOTOV.2016.2545404  0.254
2012 Heinrichs H, Reutzel E, Ashok S, Mohney S. Parameter optimization of laser-doped selective emitters for applications in silicon solar cells Proceedings of Spie - the International Society For Optical Engineering. 8473. DOI: 10.1117/12.929369  0.253
2000 DeLucca JM, Mohney SE, Auret FD, Goodman SA. Pt Schottky contacts ton-GaN formed by electrodeposition and physical vapor deposition Journal of Applied Physics. 88: 2593-2600. DOI: 10.1063/1.1287605  0.251
1998 Luther BP, Mohney SE, Delucca JM, Karlicek RF. Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN Journal of Electronic Materials. 27: 196-199. DOI: 10.1007/S11664-998-0386-7  0.25
2012 Zhang F, Liu J, You G, Zhang C, Mohney SE, Park MJ, Kwak JS, Wang Y, Koleske DD, Xu J. Nonradiative energy transfer between colloidal quantum dot-phosphors and nanopillar nitride LEDs. Optics Express. 20: A333-9. PMID 22418683 DOI: 10.1364/Oe.20.00A333  0.248
2007 Xu Z, Edgar JH, Look DC, Baumann S, Bleiler RJ, Wang SH, Mohney SE. The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates Journal of Applied Physics. 101. DOI: 10.1063/1.2437687  0.247
2001 Auret FD, Goodman SA, Myburg G, Mohney SE, De Lucca JM. Processing-induced electron traps in n-type GaN Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 82: 102-104. DOI: 10.1016/S0921-5107(00)00723-6  0.243
2018 Sun Y, Narayanachari KVLV, Wan C, Sun X, Wang H, Cooley KA, Mohney SE, White D, Duwel A, Kats MA, Ramanathan S. Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors Journal of Applied Physics. 123: 114103. DOI: 10.1063/1.5011641  0.24
2023 Schranghamer TF, Sakib NU, Sadaf MUK, Subbulakshmi Radhakrishnan S, Pendurthi R, Agyapong AD, Stepanoff SP, Torsi R, Chen C, Redwing JM, Robinson JA, Wolfe DE, Mohney SE, Das S. Ultrascaled Contacts to Monolayer MoS Field Effect Transistors. Nano Letters. PMID 37058411 DOI: 10.1021/acs.nanolett.3c00466  0.232
2008 Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333  0.23
1998 Oder TN, Williams JR, Mohney SE, Crofton J. Refractory metal boride ohmic contacts to P-type 6H-SiC Journal of Electronic Materials. 27: 14-18. DOI: 10.1007/S11664-998-0330-X  0.225
2007 Tan Z, Zhang F, Zhu T, Xu J, Wang AY, Dixon JD, Li L, Zhang Q, Mohney SE, Ruzyllo J. Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots. Nano Letters. 7: 3803-7. PMID 17975946 DOI: 10.1021/Nl072370S  0.224
2017 Simchi H, Cooley KA, Ohms J, Huang L, Kurz P, Mohney SE. Cosputtered Calcium Manganese Oxide Electrodes for Water Oxidation. Inorganic Chemistry. PMID 29283573 DOI: 10.1021/Acs.Inorgchem.7B02717  0.22
2013 Romasco-Tremper AL, Mohney SE, Andre KL, Lin JC, Muhlstein CL. Softening under membrane contact stress due to ultra-thin Ru coatings on Au films Materials Science and Engineering A. 565: 172-179. DOI: 10.1016/j.msea.2012.12.021  0.214
1997 Luther BP, Mohney SE, Jackson TN, Asif Khan M, Chen Q, Yang JW. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN Applied Physics Letters. 70: 57-59. DOI: 10.1063/1.119305  0.211
1999 Luther BP, Wolter SD, Mohney SE. High temperature Pt Schottky diode gas sensors on n-type GaN Sensors and Actuators, B: Chemical. 56: 164-168. DOI: 10.1016/S0925-4005(99)00174-4  0.208
2007 Zhang Q, Dormaier R, Buehl T, Liu B, Mohney S. Transmission Electron Microscopy of TiW/Ti/Pt/Au Gate Metallizations for InAs Channel High Electron Mobility Transistors Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607078129  0.205
1997 Luther BP, DeLucca JM, Mohney SE, Karlicek RF. Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN Applied Physics Letters. 71: 3859-3861. DOI: 10.1063/1.120526  0.203
1999 DeLucca JM, Venugopalan HS, Mohney SE, Karlicek RF. Erratum: “Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN” [Appl. Phys. Lett. 73, 3402 (1998)] Applied Physics Letters. 74: 2093-2093. DOI: 10.1063/1.123769  0.202
1997 Crofton J, Beyer L, Williams J, Luckowski E, Mohney S, Delucca J. Titanium and aluminum-titanium ohmic contacts to p-type SiC Solid-State Electronics. 41: 1725-1729. DOI: 10.1016/S0038-1101(97)00168-8  0.201
2018 Choudhury TH, Simchi H, Boichot R, Chubarov M, Mohney SE, Redwing JM. Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2 Crystal Growth & Design. 18: 4357-4364. DOI: 10.1021/Acs.Cgd.8B00306  0.199
2008 Zhang C, Zhang F, Zhu T, Cheng A, Xu J, Zhang Q, Mohney SE, Henderson RH, Wang YA. Two-photon-pumped lasing from colloidal nanocrystal quantum dots. Optics Letters. 33: 2437-9. PMID 18978879 DOI: 10.1364/Ol.33.002437  0.195
2000 Wolter SD, Delucca JM, Mohney SE, Kern RS, Kuo CP. Investigation into the early stages of oxide growth on gallium nitride Thin Solid Films. 371: 153-160. DOI: 10.1016/S0040-6090(00)00984-6  0.195
2008 Zhang Q, Dormaier R, Mohney S. Microstructural investigation of Pd/Pt/Au and Pd/Ru/Au ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Microscopy and Microanalysis. 14: 458-459. DOI: 10.1017/S1431927608085280  0.19
2008 Zhu T, Shanmugasundaram K, Price SC, Ruzyllo J, Zhang F, Xu J, Mohney SE, Zhang Q, Wang AY. Mist fabrication of light emitting diodes with colloidal nanocrystal quantum dots Applied Physics Letters. 92. DOI: 10.1063/1.2834734  0.189
2002 Crofton J, Mohney SE, Williams JR, Isaacs-Smith T. Finding the optimum Al-Ti alloy composition for use as an ohmic contact to p-type SiC Solid-State Electronics. 46: 109-113. DOI: 10.1016/S0038-1101(01)00208-8  0.189
2001 Yurick TJ, Mohney SE, Gray GL. Shape memory alloy coils optimized for electrical connectors Ieee Transactions On Components and Packaging Technologies. 24: 389-398. DOI: 10.1109/6144.946485  0.187
1997 Wolter SD, Mohney SE, Venugopalan H, Waltemyer DL, Luther BP. Growth and Characterization of Thermal Oxides on Gallium Nitride Mrs Proceedings. 468. DOI: 10.1557/PROC-468-495  0.185
2010 Sarpatwari K, Mohney SE, Ashok S, Awadelkarim OO. Minority carrier injection limited current in Re/4H-SiC Schottky diodes Physica Status Solidi (a) Applications and Materials Science. 207: 1509-1513. DOI: 10.1002/Pssa.200925339  0.183
2019 Mughal AJ, Walter TN, Cooley KA, Bertuch A, Mohney SE. Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition Journal of Vacuum Science & Technology A. 37: 010907. DOI: 10.1116/1.5074201  0.182
2007 Price SC, Shanmugasundaram K, Zhu T, Zhang F, Xu J, Mohney SE, Zhang Q, Ruzyllo J. Formation of ultra-thin quantum dot films by mist deposition Ecs Transactions. 11: 89-94. DOI: 10.1149/1.2783306  0.174
2009 Price SC, Shanmugasundaram K, Ramani S, Zhu T, Zhang F, Xu J, Mohney SE, Zhang Q, Kshirsagar A, Ruzyllo J. Studies of mist deposition for the formation of quantum dot CdSe films Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/10/105024  0.166
1998 Luckowski ED, Delucca JM, Williams JR, Mohney SE, Bozack MJ, Isaacs-Smith T, Crofton J. Improved ohmic contact to n-type 4H and 6H-SiC using nichrome Journal of Electronic Materials. 27: 330-334. DOI: 10.1007/S11664-998-0410-Y  0.137
2019 Trivedi S, Rudolph M, Atescan Y, Dai J, Cooley K, Adair JH, Mohney SE, Yamamoto N. Effect of diazotization and magnetic assembly on CNT dispersion observed with hardness and modulus measurement of their epoxy composite of low CNT volume fraction Journal of Nanoparticle Research. 21. DOI: 10.1007/S11051-019-4697-9  0.122
1999 Readinger ED, Wolter SD, Waltemyer DL, Delucca JM, Mohney SE, Prenitzer BI, Giannuzzi LA, Molnar RJ. Wet thermal oxidation of GaN Journal of Electronic Materials. 28: 257-260. DOI: 10.1007/S11664-999-0024-Z  0.114
2000 Kulisic I, Gray GL, Yurick TJ, Mohney SE. Performance of a shape memory alloy coil-shaped clamp for enhanced normal force in pin-and-receptacle electrical connectors Ieee Transactions On Components and Packaging Technologies. 23: 227-233. DOI: 10.1109/6144.846758  0.11
2020 Lee S, Walter TN, Noh S, Mohney SE, Jackson TN. Precision Wet Etching of ZnO Using Buffer Solutions Journal of Microelectromechanical Systems. 29: 1504-1509. DOI: 10.1109/JMEMS.2020.3025744  0.109
2008 Zhang C, Zhang F, Zhu T, Cheng A, Xu J, Zhang Q, Mohney SE, Henderson RH, Wang YA. Two-photon-pumped lasing from colloidal nanocrystal quantum dots Optics Letters. 33: 2437-2439. DOI: 10.1364/OL.33.002437  0.096
1997 Wolter SD, Luther BP, Waltemyer DL, Önneby C, Mohney SE, Molnar RJ. X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride Applied Physics Letters. 70: 2156-2158. DOI: 10.1063/1.118944  0.095
2010 Hu W, Liu B, Dellas NS, Eichfeld SM, Mohney SE, Redwing JM, Mayer TS. Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires Proceedings of Spie - the International Society For Optical Engineering. 7610. DOI: 10.1117/12.846766  0.094
1997 Klauk H, Wright SL, Palmateer LF, Mohney SE, Jackson TN. Hydrogenated amorphous silicon germanium black-matrix material for active-matrix liquid-crystal displays Journal of the Society For Information Display. 5: 393. DOI: 10.1889/1.1985186  0.086
2017 Haibat J, Ceneviva S, Spencer MP, Kwok F, Trivedi S, Mohney SE, Yamamoto N. Preliminary demonstration of energy-efficient fabrication of aligned CNT-polymer nanocomposites using magnetic fields Composites Science and Technology. 152: 27-35. DOI: 10.1016/J.COMPSCITECH.2017.09.006  0.051
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