☰

Hisashi Masui, Ph.D. - Publications

Affiliations: 
2007 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Tree Info Similar researchers PubMed Report error

55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Masui H. Diode ideality factor in modern light-emitting diodes Semiconductor Science and Technology. 26: 075011. DOI: 10.1088/0268-1242/26/7/075011  0.46
2010 Masui H, Nakamura S, DenBaars SP, Mishra UK. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges Ieee Transactions On Electron Devices. 57: 88-100. DOI: 10.1109/Ted.2009.2033773  0.527
2010 Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003  0.84
2010 Masui H, Nakamura S, DenBaars SP. Technique to evaluate the diode ideality factor of light-emitting diodes Applied Physics Letters. 96: 073509. DOI: 10.1063/1.3318285  0.516
2010 Masui H, Melo T, Sonoda J, Weisbuch C, Nakamura S, Denbaars SP. Effects of growth temperature and postgrowth annealing on inhomogeneous luminescence characteristics of green-emitting InGaN films Journal of Electronic Materials. 39: 15-20. DOI: 10.1007/S11664-009-0969-Y  0.32
2009 Masui H, Sonoda J, Chakraborty A, Yamada H, Iso K, Pfaff N, Koslow I, Nakamura S, DenBaars SP. Customized filter cube in fluorescence microscope measurements of InGaN/GaN quantum-well characterization Japanese Journal of Applied Physics. 48: 0980031-0980032. DOI: 10.1143/Jjap.48.098003  0.808
2009 Masui H, Keller S, Fellows N, Fichtenbaum NA, Furukawa M, Nakamura S, Mishra UK, DenBaars SP. Luminescence characteristics of N-polar GaN and InGaN films grown by metal organic chemical vapor deposition Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.071003  0.464
2009 Masui H, Asamizu H, Tyagi A, DeMille NF, Nakamura S, DenBaars SP. Correlation between optical polarization and luminescence morphology of (112̄2)-oriented InGan/GaN quantum-well structures Applied Physics Express. 2. DOI: 10.1143/Apex.2.071002  0.724
2009 Masui H, Asamizu H, Melo T, Yamada H, Iso K, Cruz SC, Nakamura S, DenBaars SP. Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations Journal of Physics D: Applied Physics. 42: 135106. DOI: 10.1088/0022-3727/42/13/135106  0.806
2009 Masui H, Cruz SC, Nakamura S, DenBaars SP. Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures Journal of Electronic Materials. 38: 756-760. DOI: 10.1007/S11664-009-0777-4  0.733
2009 Matioli E, Iza M, Choi YS, Wu F, Keller S, Masui H, Hu E, Speck J, Weisbuch C. GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S675-S679. DOI: 10.1002/Pssc.200880987  0.402
2009 Vampola KJ, Fellows NN, Masui H, Brinkley SE, Furukawa M, Chung RB, Sato H, Sonoda J, Hirasawa H, Iza M, Denbaars SP, Nakamura S. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 200-202. DOI: 10.1002/Pssa.200880411  0.792
2009 Masui H, Schmidt M, Fellows N, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Recent progress in nonpolar LEDs as polarized light emitters Physica Status Solidi (a) Applications and Materials Science. 206: 203-205. DOI: 10.1002/Pssa.200880407  0.706
2008 Masui H, Nakamura S, DenBaars SP. Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes. Applied Optics. 47: 88-92. PMID 18157281  0.541
2008 Masui H, Nakamura S. Nonpolar and Semipolar Orientations: Material Growth and Properties Materials Science Forum. 590: 211-232. DOI: 10.4028/www.scientific.net/MSF.590.211  0.365
2008 Masui H, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting Journal of the Society For Information Display. 16: 571. DOI: 10.1889/1.2905044  0.492
2008 Fellows N, Sato H, Masui H, DenBaars SP, Nakamura S. Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition Japanese Journal of Applied Physics. 47: 7854-7856. DOI: 10.1143/Jjap.47.7854  0.559
2008 Masui H, Ive T, Schmidt MC, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes Japanese Journal of Applied Physics. 47: 2112-2118. DOI: 10.1143/Jjap.47.2112  0.668
2008 Yamada H, Iso K, Saito M, Masui H, Fujito K, DenBaars SP, Nakamura S. Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes Applied Physics Express. 1: 041101. DOI: 10.1143/Apex.1.041101  0.567
2008 Masui H, Nakamura S, DenBaars SP. Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization Semiconductor Science and Technology. 23: 085018. DOI: 10.1088/0268-1242/23/8/085018  0.421
2008 Masui H, Fellows NN, Nakamura S, DenBaars SP. Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes Semiconductor Science and Technology. 23: 072001. DOI: 10.1088/0268-1242/23/7/072001  0.531
2008 Masui H, Kroemer H, Schmidt MC, Kim KC, Fellows NN, Nakamura S, DenBaars SP. Electroluminescence efficiency of (1 0 1̄ 0)-oriented InGaN-based light-emitting diodes at low temperature Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/082001  0.686
2008 Masui H, Yamada H, Iso K, Nakamura S, DenBaars SP. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure Journal of Physics D: Applied Physics. 41: 225104. DOI: 10.1088/0022-3727/41/22/225104  0.572
2008 Masui H, Sonoda J, Pfaff N, Koslow I, Nakamura S, Denbaars SP. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/16/165105  0.81
2008 Im WB, Kim Y, Fellows NN, Masui H, Hirata GA, DenBaars SP, Seshadri R. A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes Applied Physics Letters. 93: 091905. DOI: 10.1063/1.2976138  0.491
2008 Sato H, Chung RB, Hirasawa H, Fellows N, Masui H, Wu F, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2938062  0.59
2008 Masui H, Yamada H, Iso K, Nakamura S, DenBaars SP. Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes Applied Physics Letters. 92: 091105. DOI: 10.1063/1.2890050  0.516
2008 Yamada H, Iso K, Masui H, Saito M, Fujito K, DenBaars SP, Nakamura S. Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 310: 4968-4971. DOI: 10.1016/J.Jcrysgro.2008.06.079  0.553
2008 Fellows N, Masui H, Sato H, Asamizu H, Iza M, Zhong H, Nakamura S, DenBaars SP. Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry Physica Status Solidi (C). 5: 2216-2218. DOI: 10.1002/Pssc.200778572  0.551
2008 Masui H, Yamada H, Iso K, Hirasawa H, Fellows NN, Speck JS, Nakamura S, DenBaars SP. Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope Physica Status Solidi (a) Applications and Materials Science. 205: 1203-1206. DOI: 10.1002/Pssa.200824044  0.543
2007 Masui H, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Applied Optics. 46: 5974-8. PMID 17694152  0.602
2007 Masui H, Sato H, Asamizu H, Schmidt MC, Fellows NN, Nakamura S, DenBaars SP. Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents Japanese Journal of Applied Physics, Part 2: Letters. 46: L627-L629. DOI: 10.1143/Jjap.46.L627  0.666
2007 Schmidt MC, Kim KC, Sato H, Fellows N, Masui H, Nakamura S, DenBaars SP, Speck JS. High power and high external efficiency m-plane InGaN light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L126-L128. DOI: 10.1143/Jjap.46.L126  0.731
2007 Masui H, Schmidt MC, Kim KC, Chakraborty A, Nakamura S, DenBaars SP. Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 7309-7310. DOI: 10.1143/Jjap.46.7309  0.645
2007 Fujii K, Iwaki Y, Masui H, Baker TJ, Iza M, Sato H, Kaeding J, Yao T, Speck JS, DenBaars SP, Nakamura S, Ohkawa K. Photoelectrochemical Properties of Nonpolar and Semipolar GaN Japanese Journal of Applied Physics. 46: 6573-6578. DOI: 10.1143/Jjap.46.6573  0.353
2007 Moe C, Onuma T, Vampola K, Fellows N, Masui H, Newman S, Keller S, Chichibu SF, DenBaars SP, Emerson D. Increased power from deep ultraviolet LEDs via precursor selection Journal of Crystal Growth. 298: 710-713. DOI: 10.1016/J.Jcrysgro.2006.10.126  0.775
2007 Murai A, Thompson DB, Masui H, Fellows N, Mishra UK, Nakamura S, DenBaars SP. Mega-cone blue LEDs based on ZnO/GaN direct wafer bonding Physica Status Solidi (C). 4: 2756-2759. DOI: 10.1002/Pssc.200674710  0.542
2006 Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02  0.805
2006 Masui H, Nakamura S, DenBaars SP. Effects of Phosphor Application Geometry on White Light-Emitting Diodes Japanese Journal of Applied Physics. 45: L910-L912. DOI: 10.1143/Jjap.45.L910  0.491
2006 Masui H, Baker TJ, Sharma R, Pattison PM, Iza M, Zhong H, Nakamura S, DenBaars SP. First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L904  0.508
2006 Masui H, Schmidt MC, Chakraborty A, Nakamura S, DenBaars SP. Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 7661-7666. DOI: 10.1143/Jjap.45.7661  0.708
2006 Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 739-741. DOI: 10.1143/Jjap.45.739  0.766
2006 Masui H, Baker TJ, Iza M, Zhong H, Nakamura S, DenBaars SP. Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN Journal of Applied Physics. 100: 113109. DOI: 10.1063/1.2382667  0.553
2006 Murai A, Thompson DB, Masui H, Fellows N, Mishra UK, Nakamura S, DenBaars SP. Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding Applied Physics Letters. 89: 171116. DOI: 10.1063/1.2364065  0.466
2006 Koyama T, Onuma T, Masui H, Chakraborty A, Haskell BA, Keller S, Mishra UK, Speck JS, Nakamura S, DenBaars SP, Sota T, Chichibu SF. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates Applied Physics Letters. 89. DOI: 10.1063/1.2337085  0.782
2006 Chakraborty A, Shen L, Masui H, DenBaars SP, Mishra UK. Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances Applied Physics Letters. 88: 181120. DOI: 10.1063/1.2201878  0.315
2006 Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, DenBaars SP, Emerson D. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753. DOI: 10.1007/S11664-006-0133-X  0.767
2005 Moe CG, Masui H, Schmidt MC, Shen L, Moran B, Newman S, Vampola K, Mates T, Keller S, Speck JS, Denbaars SP, Hussel C, Emerson D. Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide Japanese Journal of Applied Physics, Part 2: Letters. 44: L502-L504. DOI: 10.1143/Jjap.44.L502  0.777
2005 Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP. Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate Japanese Journal of Applied Physics, Part 2: Letters. 44: L1329-L1332. DOI: 10.1143/Jjap.44.L1329  0.779
2005 Cohen DA, Masui H, Schmidt M, Brendan-Moran, Denbaars SP. Chip-scale fluorescence sensors Proceedings of Spie - the International Society For Optical Engineering. 6008. DOI: 10.1117/12.632493  0.682
2005 Sharma R, Pattison PM, Masui H, Farrell RM, Baker TJ, Haskell BA, Wu F, Denbaars SP, Speck JS, Nakamura S. Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139841  0.778
1996 Keller S, Keller BP, Kapolnek D, Abare AC, Masui H, Coldren LA, Mishra UK, Den Baars SP. Growth and characterization of bulk InGaN films and quantum wells Applied Physics Letters. 68: 3147-3149. DOI: 10.1063/1.115806  0.494
1995 Keller BP, Keller S, Kapolnek D, Jiang W-, Wu Y-, Masui H, Wu X, Heying B, Speck JS, Mishra UK, Denbaars SP. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN Journal of Electronic Materials. 24: 1707-1709. DOI: 10.1007/Bf02676837  0.362
1992 Takeuchi M, Masui H, Kikuma I, Masui M, Muranoi T, Wada T. Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices Japanese Journal of Applied Physics. 31: L498-L500. DOI: 10.1143/Jjap.31.L498  0.493
1991 Masui H, Takeuchi M. Effects of Crystallinity of Hole Transport Layers on Organic Electroluminescent Device Performance Japanese Journal of Applied Physics. 30: L864-L866. DOI: 10.1143/Jjap.30.L864  0.425
Show low-probability matches.