☰

Brian L. Swenson, Ph.D. - Publications

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Tree Info Similar researchers PubMed Report error

21/28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Kikkawa T, Hosoda T, Imanishi K, Shono K, Itabashi K, Ogino T, Miyazaki Y, Mochizuki A, Kiuchi K, Kanamura M, Kamiyama M, Akiyama S, Kawasaki S, Maeda T, Asai Y, ... ... Swenson B, et al. 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4. DOI: 10.1109/IEDM.2014.7046968  0.646
2014 Wu YF, Gritters J, Shen L, Smith RP, Swenson B. KV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 v and 100 kHz Ieee Transactions On Power Electronics. 29: 2634-2637. DOI: 10.1109/Tpel.2013.2284248  0.664
2013 Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014  0.703
2013 Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021  0.724
2013 Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402  0.758
2012 Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456  0.71
2012 Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355  0.75
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  0.744
2011 Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002  0.611
2011 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson B, Thibeault BJ, Speck JS, Mishra UK. Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139. DOI: 10.1109/Led.2010.2090125  0.558
2010 Mishra UK, Wong MH, Nidhi, Dasgupta S, Brown DF, Swenson BL, Keller S, Speck JS. N-polar Gan-based MIS-HEMTS for mixed signal applications Ieee Mtt-S International Microwave Symposium Digest. 1130-1133. DOI: 10.1109/MWSYM.2010.5518201  0.374
2010 Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791  0.709
2010 Chowdhury S, Wong MH, Swenson BL, Mishra UK. Dispersion-free AlGaN/GaN CA VET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2010.5551906  0.362
2010 Singisetti U, Wong MH, Dasgupta S, Nidhi, Swenson BL, Thibeault BJ, Speck JS, Mishra UK. Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Device Research Conference - Conference Digest, Drc. 191-192. DOI: 10.1109/DRC.2010.5551902  0.346
2010 Higashiwaki M, Chowdhury S, Swenson BL, Mishra UK. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Applied Physics Letters. 97. DOI: 10.1063/1.3522649  0.569
2010 Higashiwaki M, Chowdhury S, Miao MS, Swenson BL, Van De Walle CG, Mishra UK. Distribution of donor states on etched surface of AlGaN/GaN heterostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3481412  0.565
2009 Sansaptak ND, Pie Y, Swenson BL, Brown DF, Keller S, Speck JS, Mishra UK. fT and fMAX of 47 and 81 GHz, respectively, on N-polar GaN/AlN MIS-HEMT Ieee Electron Device Letters. 30: 599-601. DOI: 10.1109/Led.2009.2020305  0.494
2009 Swenson BL, Mishra UK. Photoassisted high-frequency capacitance-voltage characterization of the Si3 N4 /GaN interface Journal of Applied Physics. 106. DOI: 10.1063/1.3224852  0.412
2008 Chowdhury S, Swenson BL, Mishra UK. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer Ieee Electron Device Letters. 29: 543-545. DOI: 10.1109/Led.2008.922982  0.625
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0.753
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, Denbaars SP, Speck JS, Mishra UK. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2008.4800802  0.588
Low-probability matches (unlikely to be authored by this person)
2009 Koehl WF, Wong MH, Poblenz C, Swenson B, Mishra UK, Speck JS, Awschalom DD. Current-induced spin polarization in gallium nitride Applied Physics Letters. 95. DOI: 10.1063/1.3194781  0.299
2016 Tjoelker R, Prestage J, Burt E, Chen P, Chong Y, Chung S, Diener W, Ely T, Enzer D, Mojaradi H, Okino C, Pauken M, Robison D, Swenson B, Tucker B, et al. Mercury Ion Clock for a NASA Technology Demonstration Mission. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. PMID 27019481 DOI: 10.1109/Tuffc.2016.2543738  0.089
1987 Swenson BL, Squyres SW, Knight TC. A proposed Comet Nucleus Penetrator for the Comet Rendezvous Asteroid Flyby mission. Acta Astronautica. 15: 471-9. PMID 11538848 DOI: 10.1016/0094-5765(87)90185-8  0.075
1999 Koplin MD, Butcher JA, Vasavada NK, Thiel MP, Swenson BL, Bower GR. The development of the university of wisconsin's parallel hybrid-electric aluminum intensive vehicle Sae Technical Papers. DOI: 10.4271/1999-01-0613  0.061
2010 Liu J, He S, Jian T, Dobbelaar PH, Sebhat IK, Lin LS, Goodman A, Guo C, Guzzo PR, Hadden M, Henderson AJ, Pattamana K, Ruenz M, Sargent BJ, Swenson B, et al. Synthesis and SAR of derivatives based on 2-biarylethylimidazole as bombesin receptor subtype-3 (BRS-3) agonists for the treatment of obesity. Bioorganic & Medicinal Chemistry Letters. 20: 2074-7. PMID 20219372 DOI: 10.1016/j.bmcl.2010.02.076  0.026
2012 Hranjec T, Rosenberger LH, Swenson B, Metzger R, Flohr TR, Politano AD, Riccio LM, Popovsky KA, Sawyer RG. Aggressive versus conservative initiation of antimicrobial treatment in critically ill surgical patients with suspected intensive-care-unit-acquired infection: a quasi-experimental, before and after observational cohort study. The Lancet. Infectious Diseases. 12: 774-80. PMID 22951600 DOI: 10.1016/S1473-3099(12)70151-2  0.01
2010 Hadden M, Goodman A, Guo C, Guzzo PR, Henderson AJ, Pattamana K, Ruenz M, Sargent BJ, Swenson B, Yet L, Liu J, He S, Sebhat IK, Lin LS, Tamvakopoulos C, et al. Synthesis and SAR of heterocyclic carboxylic acid isosteres based on 2-biarylethylimidazole as bombesin receptor subtype-3 (BRS-3) agonists for the treatment of obesity. Bioorganic & Medicinal Chemistry Letters. 20: 2912-5. PMID 20347296 DOI: 10.1016/j.bmcl.2010.03.028  0.01
Hide low-probability matches.