| Year |
Citation |
Score |
| 2021 |
Cuniberto E, Alharbi A, Huang Z, Wu T, Kiani R, Shahrjerdi D. Anomalous sensitivity enhancement of nano-graphitic electrochemical micro-sensors with reducing the operating voltage. Biosensors & Bioelectronics. 177: 112966. PMID 33450612 DOI: 10.1016/j.bios.2021.112966 |
0.524 |
|
| 2020 |
You KD, Cuniberto E, Hsu SC, Wu B, Huang Z, Pei X, Shahrjerdi D. An Electrochemical Biochip for Measuring Low Concentrations of Analytes with Adjustable Temporal Resolutions. Ieee Transactions On Biomedical Circuits and Systems. PMID 32746358 DOI: 10.1109/Tbcas.2020.3009303 |
0.309 |
|
| 2020 |
Zheng X, Calò A, Cao T, Liu X, Huang Z, Das PM, Drndic M, Albisetti E, Lavini F, Li TD, Narang V, King WP, Harrold JW, Vittadello M, Aruta C, ... Shahrjerdi D, et al. Spatial defects nanoengineering for bipolar conductivity in MoS. Nature Communications. 11: 3463. PMID 32651374 DOI: 10.1038/S41467-020-17241-1 |
0.329 |
|
| 2020 |
Huang Z, Alharbi A, Mayer W, Cuniberto E, Taniguchi T, Watanabe K, Shabani J, Shahrjerdi D. Versatile construction of van der Waals heterostructures using a dual-function polymeric film. Nature Communications. 11: 3029. PMID 32541673 DOI: 10.1038/S41467-020-16817-1 |
0.403 |
|
| 2020 |
Cuniberto E, Alharbi A, Wu T, Huang Z, Sardashti K, You KD, Kisslinger K, Taniguchi T, Watanabe K, Kiani R, Shahrjerdi D. Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors. Scientific Reports. 10: 9444. PMID 32523076 DOI: 10.1038/S41598-020-66408-9 |
0.597 |
|
| 2019 |
Alharbi A, Huang Z, Taniguchi T, Watanabe K, Shahrjerdi D. Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors Ieee Electron Device Letters. 40: 135-138. DOI: 10.1109/Led.2018.2883808 |
0.38 |
|
| 2019 |
Wu T, Alharbi A, Kiani R, Shahrjerdi D. Graphene Electrodes: Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors (Adv. Mater. 6/2019) Advanced Materials. 31: 1970037. DOI: 10.1002/Adma.201970037 |
0.558 |
|
| 2018 |
Wu T, Alharbi A, Kiani R, Shahrjerdi D. Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors. Advanced Materials (Deerfield Beach, Fla.). e1805752. PMID 30548684 DOI: 10.1002/Adma.201805752 |
0.591 |
|
| 2018 |
Alharbi A, Shahrjerdi D. Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 Transistors Ieee Transactions On Electron Devices. 65: 4084-4092. DOI: 10.1109/Ted.2018.2866772 |
0.393 |
|
| 2017 |
Nasri B, Wu T, Alharbi A, You KD, Gupta M, Sebastian SP, Kiani R, Shahrjerdi D. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection. Ieee Transactions On Biomedical Circuits and Systems. 11: 1192-1203. PMID 29293417 DOI: 10.1109/Tbcas.2017.2778048 |
0.603 |
|
| 2017 |
Alharbi A, Armstrong D, Alharbi S, Shahrjerdi D. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2. Acs Nano. PMID 29144734 DOI: 10.1021/Acsnano.7B07568 |
0.365 |
|
| 2017 |
Wu T, Alharbi A, You KD, Kisslinger K, Stach EA, Shahrjerdi D. Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultra-Thin Silicon Transistors. Acs Nano. PMID 28636326 DOI: 10.1021/Acsnano.7B02986 |
0.319 |
|
| 2017 |
Hsieh C, Chang Y, Chen Y, Shahrjerdi D, Banerjee SK. Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays Ecs Journal of Solid State Science and Technology. 6: N143-N147. DOI: 10.1149/2.0041709Jss |
0.557 |
|
| 2017 |
Hsieh C, Chang Y, Jeon Y, Roy A, Shahrjerdi D, Banerjee SK. Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector Ieee Electron Device Letters. 38: 871-874. DOI: 10.1109/Led.2017.2710955 |
0.453 |
|
| 2017 |
Alharbi A, Zahl P, Shahrjerdi D. Material and device properties of superacid-treated monolayer molybdenum disulfide Applied Physics Letters. 110: 033503. DOI: 10.1063/1.4974046 |
0.362 |
|
| 2016 |
Hsieh C, Roy A, Chang Y, Shahrjerdi D, Banerjee SK. A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems Applied Physics Letters. 109: 223501. DOI: 10.1063/1.4971188 |
0.473 |
|
| 2016 |
Alharbi A, Shahrjerdi D. Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition Applied Physics Letters. 109: 193502. DOI: 10.1063/1.4967188 |
0.379 |
|
| 2016 |
Shahrjerdi D, Bedell SW, Khakifirooz A, Cheng K. Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters Solid-State Electronics. 117: 117-122. DOI: 10.1016/J.Sse.2015.11.023 |
0.357 |
|
| 2016 |
Alharbi A, Shahrjerdi D. Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films Physica Status Solidi - Rapid Research Letters. 10: 627-633. DOI: 10.1002/Pssr.201600163 |
0.363 |
|
| 2014 |
Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Bayram C, Hekmatshoar B, Li N, Ott J, Sadana D. Advanced flexible electronics: Challenges and opportunities Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2051716 |
0.361 |
|
| 2014 |
Hekmatshoar B, Shahrjerdi D, Hopstaken M. High-efficiency heterojunction solar cells on crystalline germanium substrates Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045632 |
0.358 |
|
| 2013 |
Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. Acs Nano. 7: 8303-8. PMID 24006886 DOI: 10.1021/Nn403935V |
0.368 |
|
| 2013 |
Shahrjerdi D, Bedell SW. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic. Nano Letters. 13: 315-20. PMID 23249265 DOI: 10.1021/Nl304310X |
0.421 |
|
| 2013 |
Bedell SW, Fogel K, Lauro P, Shahrjerdi D, Ott JA, Sadana D. Layer transfer by controlled spalling Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/15/152002 |
0.387 |
|
| 2013 |
Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678 |
0.519 |
|
| 2013 |
Shahrjerdi D, Bedell SW, Bayram C, Lubguban CC, Fogel K, Lauro P, Ott JA, Hopstaken M, Gayness M, Sadana D. Ultralight high-efficiency flexible InGaP/(In)GaAs tandem solar cells on plastic Advanced Energy Materials. 3: 566-571. DOI: 10.1002/Aenm.201200827 |
0.303 |
|
| 2012 |
Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z |
0.381 |
|
| 2012 |
Hekmatshoar B, Shahrjerdi D, Hopstaken M, Ott JA, Sadana DK. Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4751339 |
0.408 |
|
| 2012 |
Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Gokmen T, Ott JA, Sadana DK. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Applied Physics Letters. 100. DOI: 10.1063/1.3681397 |
0.334 |
|
| 2012 |
Shahrjerdi D, Hekmatshoar B, Bedell SW, Hopstaken M, Sadana DK. Low-temperature epitaxy of compressively strained silicon directly on silicon substrates Journal of Electronic Materials. 41: 494-497. DOI: 10.1007/S11664-011-1807-6 |
0.358 |
|
| 2011 |
Shahrjerdi D, Hekmatshoar B, Sadana DK. Low-temperature a-Si:H/GaAs Hheterojunction solar cells Ieee Journal of Photovoltaics. 1: 104-107. DOI: 10.1109/Jphotov.2011.2164391 |
0.363 |
|
| 2011 |
Hekmatshoar B, Shahrjerdi D, Sadana DK. Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates Technical Digest - International Electron Devices Meeting, Iedm. 36.6.1-36.6.4. DOI: 10.1109/IEDM.2011.6131687 |
0.302 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406 |
0.507 |
|
| 2010 |
Shahrjerdi D, Nah J, Hekmatshoar B, Akyol T, Ramon M, Tutuc E, Banerjee SK. Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric Applied Physics Letters. 97. DOI: 10.1063/1.3521284 |
0.498 |
|
| 2009 |
Banerjee S, Tutuc E, Kim S, Akyol T, Jamil M, Shahrjerdi D, Donnelly J, Colombo L. High-k dielectrics for Ge, III-V and graphene MOSFETs Ecs Transactions. 25: 285-299. DOI: 10.1149/1.3206627 |
0.327 |
|
| 2009 |
Garcia-Gutierrez DI, Shahrjerdi D, Kaushik V, Banerjee SK. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2390-2395. DOI: 10.1116/1.3256229 |
0.558 |
|
| 2009 |
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain Device Research Conference - Conference Digest, Drc. 15-16. DOI: 10.1109/DRC.2009.5354970 |
0.305 |
|
| 2009 |
Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410 |
0.565 |
|
| 2009 |
Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021 |
0.573 |
|
| 2009 |
Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration Journal of Electronic Materials. 38: 438-442. DOI: 10.1007/S11664-008-0645-7 |
0.742 |
|
| 2008 |
Jamil M, Donnelly JP, Lee S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-03 |
0.638 |
|
| 2008 |
Shahrjerdi D, Garcia-Gutierrez DI, Kim S, Hasan M, Varahramyan K, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode n-channel GaAs MOSFETs employing a wet clean process for GaAs substrates Ecs Transactions. 16: 59-67. DOI: 10.1149/1.2979981 |
0.349 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2938728 |
0.579 |
|
| 2008 |
Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061 |
0.571 |
|
| 2008 |
Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889 |
0.612 |
|
| 2008 |
Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031 |
0.526 |
|
| 2008 |
Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Donnelly JP, Tutuc E, Banerjee SK. Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2008.4800732 |
0.713 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2943186 |
0.562 |
|
| 2008 |
Shahrjerdi D, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937404 |
0.532 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim HS, Ok I, Yum JH, Park SI, Banerjee SK, Lee JC. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2937117 |
0.564 |
|
| 2008 |
Shahrjerdi D, Akyol T, Ramon M, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2931708 |
0.567 |
|
| 2008 |
Garcia-Gutierrez DI, Kaushik V, Shahrjerdi D, Banerjee SK. Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications Microscopy and Microanalysis. 14: 446-447. DOI: 10.1017/S1431927608083001 |
0.523 |
|
| 2008 |
Jamil M, Donnelly JP, Lee SH, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A comprehensive study of growth techniques and characterization of epitaxial Ge1-xCx (111) layers grown directly on Si (111) for MOS applications Materials Research Society Symposium Proceedings. 1068: 273-278. |
0.317 |
|
| 2007 |
Banerjee SK, Tang S, Mao C, Sarkar J, Liu H, Shahrjerdi D, Lee CH, Trent JD. Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories The Japan Society of Applied Physics. 2007: 948-949. DOI: 10.7567/Ssdm.2007.D-8-1 |
0.463 |
|
| 2007 |
Donnelly JP, Shahrjerdi D, Kelly DQ, Tutuc E, Banerjee SK. Enhanced channel mobility materials for MOSFETs on Si substrates Ecs Transactions. 11: 47-60. DOI: 10.1149/1.2780764 |
0.332 |
|
| 2007 |
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119 |
0.672 |
|
| 2007 |
Shahrjerdi D, Garcia-Gutierrez DI, Banerjee SK. Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach Ieee Electron Device Letters. 28: 793-796. DOI: 10.1109/Led.2007.902612 |
0.497 |
|
| 2007 |
Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445 |
0.629 |
|
| 2007 |
Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190 |
0.563 |
|
| 2007 |
Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438 |
0.545 |
|
| 2007 |
Sarkar J, Tang S, Shahrjerdi D, Banerjee SK. Vertical flash memory with protein-mediated assembly of nanocrystal floating gate Applied Physics Letters. 90. DOI: 10.1063/1.2711528 |
0.519 |
|
| 2007 |
Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024 |
0.484 |
|
| 2006 |
Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384 |
0.46 |
|
| 2006 |
Shahrjerdi D, Oye MM, Holmes AL, Banerjee SK. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization Applied Physics Letters. 89. DOI: 10.1063/1.2234837 |
0.571 |
|
| 2005 |
Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Afzali-Kusha A, Robertson MD, Tonita A. Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress Journal of Applied Physics. 97. DOI: 10.1063/1.1836012 |
0.334 |
|
| 2005 |
Donnelly JP, Kelly DQ, Joshi S, Dey S, Shahrjerdi D, Wiedeman I, Ahmad D, Banerjee SK. High mobility strained Ge MOSFETs with high-k gate dielectric on Si 2005 International Semiconductor Device Research Symposium. 2005: 150. |
0.341 |
|
| 2004 |
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Asl Soliemani E. Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors Materials Research Society Symposium Proceedings. 814: 101-105. DOI: 10.1557/Proc-814-I6.2 |
0.391 |
|
| 2004 |
Makki BS, Moradi M, Moafi A, Mohajerzadeh S, Hekmatshoar B, Shahrjerdi D. Fabrication of poly-Ge-based thermopiles on plastic Ieee Sensors Journal. 4: 743-748. DOI: 10.1109/Jsen.2004.836862 |
0.359 |
|
| 2004 |
Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium Applied Physics Letters. 85: 1054-1056. DOI: 10.1063/1.1779946 |
0.376 |
|
| 2004 |
Shahrjerdi D, Fathipour M, Hekmatshoar B, Khakifirooz A. A lateral structure for low-cost fabrication of COOLMOS™ Solid-State Electronics. 48: 1953-1957. DOI: 10.1016/J.Sse.2004.05.041 |
0.354 |
|
| 2004 |
Hekmatshoar B, Khajooeizadeh A, Mohajerzadeh S, Shahrjerdi D, Asl-Soleimani E. Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors Materials Science in Semiconductor Processing. 7: 419-422. DOI: 10.1016/J.Mssp.2004.09.019 |
0.409 |
|
| 2004 |
Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A, Robertson M. High Mobility Poly-Ge Thin-Film Transistors Fabricated on Flexible Plastic Substrates at Temperatures below 130°C Journal of Electronic Materials. 33: 353-357. DOI: 10.1007/S11664-004-0142-6 |
0.377 |
|
| 2003 |
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Goodarzi A, Robertson M. Low temperature crystallization of germanium on plastic by externally applied compressive stress Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 752-755. DOI: 10.1116/1.1569923 |
0.334 |
|
| 2003 |
Shahrjerdi D, Hekmatshoar B, Rezaee L, Mohajerzadeh SS. Low temperature stress-induced crystallization of germanium on plastic Thin Solid Films. 427: 330-334. DOI: 10.1016/S0040-6090(02)01200-2 |
0.323 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2003 |
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Afzali-Kusha A. Stress-assisted copper-induced lateral growth of polycrystalline germanium Materials Research Society Symposium - Proceedings. 795: 199-204. DOI: 10.1557/Proc-795-U6.10 |
0.297 |
|
| 2004 |
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Tonita A, Bennett JC. Low-temperature stress-assisted germanium-induced crystallization of silicon-germanium alloys on flexible polyethylene terephtalate substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 856-858. DOI: 10.1116/1.1705581 |
0.29 |
|
| 2003 |
Shahrjerdi D, Hekmatshoar B, Mohajerzadeh S, Darbari S. Low temperature fabrication of high mobility poly-Ge TFTs on plastic Proceedings of the International Conference On Microelectronics, Icm. 2003: 361-364. DOI: 10.1109/ICM.2003.237966 |
0.288 |
|
| 2012 |
Bedell SW, Shahrjerdi D, Hekmatshoar B, Fogel K, Lauro PA, Ott JA, Sosa N, Sadana D. Kerf-less removal of Si, Ge, and III-V layers by controlled spalling to enable low-cost PV technologies Ieee Journal of Photovoltaics. 2: 141-147. DOI: 10.1109/JPHOTOV.2012.2184267 |
0.284 |
|
| 2018 |
Wu T, Alharbi A, Taniguchi T, Watanabe K, Shahrjerdi D. Low-frequency noise in irradiated graphene FETs Applied Physics Letters. 113: 193502. DOI: 10.1063/1.5051658 |
0.282 |
|
| 2012 |
Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Hekmatshoar B, Li N, Ott JA, Sadana DK. Cost-effective layer transfer by controlled spalling technology Ecs Transactions. 50: 315-323. DOI: 10.1149/05007.0315ecst |
0.276 |
|
| 2012 |
Shahrjerdi D, Hekmatshoar B, Bedell SW, Ott JA, Hopstaken M, Sadana DK. Ultra low temperature epitaxial growth of strained Si directly on Si substrates Ecs Transactions. 45: 31-37. DOI: 10.1149/1.3700936 |
0.275 |
|
| 2009 |
Cheng K, Khakifirooz A, Kulkarni P, Ponoth S, Kuss J, Shahrjerdi D, Edge LF, Kimball A, Kanakasabapathy S, Xiu K, Schmitz S, Reznicek A, Adam T, He H, Loubet N, et al. Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424422 |
0.274 |
|
| 2017 |
Cao Y, Robson AJ, Alharbi A, Roberts J, Woodhead CS, Noori YJ, Bernardo-Gavito R, Shahrjerdi D, Roedig U, Fal’ko VI, Young RJ. Optical identification using imperfections in 2D materials 2d Materials. 4: 045021. DOI: 10.1088/2053-1583/Aa8B4D |
0.274 |
|
| 2019 |
Manickam A, Kuimelis RG, Hassibi A, You K, Wood N, Pei L, Liu Y, Singh R, Gamini N, McDermott MW, Shahrjerdi D. A CMOS Electrochemical Biochip With 32$\times$ 32 Three-Electrode Voltammetry Pixels Ieee Journal of Solid-State Circuits. 54: 2980-2990. DOI: 10.1109/Jssc.2019.2941020 |
0.273 |
|
| 2012 |
Hekmatshoar B, Shahrjerdi D, Bedell SW, Sadana DK. High-efficiency heterojunction solar cells on crystalline silicon and germanium substrates enabled by low-temperature epitaxial growth of silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 1590-1593. DOI: 10.1109/PVSC.2012.6317898 |
0.265 |
|
| 2009 |
Shahrjerdi D, Nah J, Akyol T, Ramon M, Tutuc E, Banerjee SK. Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2009.5354894 |
0.26 |
|
| 2016 |
Alharbi A, Shahrjerdi D. A new approach for energy band engineering in flexible GaAs devices Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548451 |
0.252 |
|
| 2014 |
Hekmatshoar B, Shahrjerdi D, Sadana DK. Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 971-972. DOI: 10.1109/PVSC.2014.6925075 |
0.248 |
|
| 2013 |
Shahrjerdi D, Bedell SW, Bayram C, Sadana D. Flexible InGaP/(In)GaAs tandem solar cells with very high specific power Conference Record of the Ieee Photovoltaic Specialists Conference. 2805-2808. DOI: 10.1109/PVSC.2013.6745055 |
0.247 |
|
| 2013 |
Shahrjerdi D, Bedell SW, Bayram C, Lubguban CC, Fogel K, Lauro P, Ott JA, Hopstaken M, Gayness M, Sadana D. Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013) Advanced Energy Materials. 3: 542-542. DOI: 10.1002/Aenm.201370020 |
0.244 |
|
| 2022 |
Huang Z, Cuniberto E, Park S, Kisslinger K, Wu Q, Taniguchi T, Watanabe K, Yager KG, Shahrjerdi D. Mechanisms of Interface Cleaning in Heterostructures Made from Polymer-Contaminated Graphene. Small (Weinheim An Der Bergstrasse, Germany). e2201248. PMID 35388971 DOI: 10.1002/smll.202201248 |
0.24 |
|
| 2003 |
Makki BS, Kargar M, Mohajerzadeh S, Maleki T, Shahrjerdi D. Application of PET plastics in micro-sensor fabrication Proceedings of the International Conference On Microelectronics, Icm. 2003: 357-360. DOI: 10.1109/ICM.2003.237932 |
0.237 |
|
| 2004 |
Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/DRC.2004.1367796 |
0.236 |
|
| 2012 |
Shahrjerdi D, Bedell SW, Khakifirooz A, Fogel K, Lauro P, Cheng K, Ott JA, Gaynes M, Sadana DK. Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2012.6478981 |
0.234 |
|
| 2003 |
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Akhavan A, Robertson M. Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressee Stress Materials Research Society Symposium - Proceedings. 769: 183-188. |
0.233 |
|
| 2012 |
Shahrjerdi D, Bedell SW, Hekmatshoar B, Bayram C, Sadana DK. New paradigms for cost-effective III-V photovoltaic technology Ecs Transactions. 50: 15-22. DOI: 10.1149/05040.0015ecst |
0.229 |
|
| 2011 |
Hekmatshoar B, Shahrjerdi D, Hopstaken M, Sadana D. Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devices Ieee International Reliability Physics Symposium Proceedings. 5E.5.1-5E.5.4. DOI: 10.1109/IRPS.2011.5784536 |
0.228 |
|
| 2003 |
Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A. High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C Device Research Conference - Conference Digest, Drc. 2003: 85-86. DOI: 10.1109/DRC.2003.1226884 |
0.224 |
|
| 2010 |
Khakifirooz A, Cheng K, Jagannathan B, Kulkarni P, Sleight JW, Shahrjerdi D, Chang JB, Lee S, Li J, Bu H, Gauthier R, Doris B, Shahidi G. Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 152-153. DOI: 10.1109/ISSCC.2010.5434014 |
0.222 |
|
| 2012 |
Khakifirooz A, Cheng K, Liu Q, Nagumo T, Loubet N, Reznicek A, Kuss J, Gimbert J, Sreenivasan R, Vinet M, Grenouillet L, Le Tiec Y, Wacquez R, Ren Z, Cai J, ... Shahrjerdi D, et al. Extremely thin SOI for system-on-chip applications Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330618 |
0.22 |
|
| 2020 |
Li R, Zhang X, Miao L, Stewart L, Kotta E, Qian D, Kaznatcheev K, Sadowski JT, Vescovo E, Alharbi A, Wu T, Taniguchi T, Watanabe K, Shahrjerdi D, Wray LA. Second derivative analysis and alternative data filters for multi-dimensional spectroscopies: A Fourier-space perspective Journal of Electron Spectroscopy and Related Phenomena. 238: 146852. DOI: 10.1016/J.Elspec.2019.05.001 |
0.199 |
|
| 2005 |
Shahrjerdi D, Hekmatshoar B, Khakifirooz A, Afzali-Kusha A. Optimization of the VT-control method for low-power ultra-thin double-gate SOI logic circuits Integration, the Vlsi Journal. 38: 505-513. DOI: 10.1016/j.vlsi.2004.07.004 |
0.179 |
|
| 2004 |
Shahrjerdi D, Hekmatshoar B, Afzali-Kusha A, Khakifirooz A. Optimization of the V T-control method for low-power ultra-thin double-gate SOI logic circuits Proceedings of the Acm Great Lakes Symposium On Vlsi. 236-239. |
0.176 |
|
| 2012 |
Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Ott JA, Gokmen T, Sadana DK. High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology Conference Record of the Ieee Photovoltaic Specialists Conference. 974-977. DOI: 10.1109/PVSC.2012.6317765 |
0.176 |
|
| 2011 |
Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, Haensch W. High device yield carbon nanotube NFETs for high-performance logic applications Technical Digest - International Electron Devices Meeting, Iedm. 23.3.1-23.3.4. DOI: 10.1109/IEDM.2011.6131596 |
0.175 |
|
| 2015 |
Shahrjerdi D, Rajendran J, Garg S, Koushanfar F, Karri R. Shielding and securing integrated circuits with sensors Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 2015: 170-174. DOI: 10.1109/ICCAD.2014.7001348 |
0.169 |
|
| 2012 |
Ebert C, Pulwin Z, Reynolds CL, Shahrjerdi D, Rawdanowicz TA, Dyer D, Lu F. Optimization of MOCVD grown MQW structures for triple junction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1465-1470. DOI: 10.1109/PVSC.2012.6317873 |
0.159 |
|
| 2019 |
Zheng X, Calò A, Albisetti E, Liu X, Alharbi ASM, Arefe G, Liu X, Spieser M, Yoo WJ, Taniguchi T, Watanabe K, Aruta C, Ciarrocchi A, Kis A, Lee BS, ... ... Shahrjerdi D, et al. Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography Nature Electronics. 2: 17-25. DOI: 10.1038/s41928-018-0191-0 |
0.138 |
|
| 2003 |
Shahrjerdi D, Hekmatshoar B, Talaie M, Shoaei O. A fast settling, high DC gain, low power OPAMP design for high resolution, high speed A/D converters Proceedings of the International Conference On Microelectronics, Icm. 2003: 207-210. DOI: 10.1109/ICM.2003.238614 |
0.127 |
|
| 2003 |
Shahrjerdi D, Hekmatshoar B, Khakifirooz A, Fathipour M. An approach to low-cost fabrication of lateral COOLMOS structures 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 272-273. DOI: 10.1109/ISDRS.2003.1272093 |
0.12 |
|
| 2024 |
Jamalzadeh M, Cuniberto E, Huang Z, Feeley RM, Patel JC, Rice ME, Uichanco J, Shahrjerdi D. Toward robust quantification of dopamine and serotonin in mixtures using nano-graphitic carbon sensors. The Analyst. PMID 38375597 DOI: 10.1039/d3an02086j |
0.105 |
|
| 2005 |
Abdi Y, Mohajerzadeh S, Hosseinzadegan H, Shahrjerdi D, Robertson M, Bennett JC. Application of carbon nanotubes in nano-lithography and nano-electronics Device Research Conference - Conference Digest, Drc. 2005: 115-116. DOI: 10.1109/DRC.2005.1553082 |
0.096 |
|
| 2022 |
Cuniberto E, Huang Z, Ward MD, Shahrjerdi D. Unraveling the complex electrochemistry of serotonin using engineered graphitic sensors. The Analyst. PMID 36412489 DOI: 10.1039/d2an01451c |
0.089 |
|
| 2012 |
Khakifirooz A, Cheng K, Nagumo T, Loubet N, Adam T, Reznicek A, Kuss J, Shahrjerdi D, Sreenivasan R, Ponoth S, He H, Kulkarni P, Liu Q, Hashemi P, Khare P, et al. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS Digest of Technical Papers - Symposium On Vlsi Technology. 117-118. DOI: 10.1109/VLSIT.2012.6242489 |
0.085 |
|
| 2011 |
Singh RR, Manickam A, Ayazian S, Hassibi A, Shahrjerdi D. VLSI-enabled DNA sequencing arrays Midwest Symposium On Circuits and Systems. DOI: 10.1109/MWSCAS.2011.6026444 |
0.046 |
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