☰

Diana L. Huffaker - Publications

Affiliations: 
Electrical Engineering University of California, Los Angeles, Los Angeles, CA 
Area:
Solid-state nanotechnology, plasmonically-coupled processes, optoelectronic devices, solar cell, si photonics, novel materials
Tree Info Similar researchers PubMed Report error

305/350 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Chang TY, Kim H, Hubbard WA, Azizur-Rahman KM, Ju JJ, Kim JH, Lee WJ, Huffaker D. InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications. Acs Applied Materials & Interfaces. PMID 35175722 DOI: 10.1021/acsami.1c21013  0.393
2020 Bishop SG, Hadden JP, Alzahrani FD, Hekmati R, Huffaker DL, Langbein WW, Bennett AJ. Room-Temperature Quantum Emitter in Aluminum Nitride. Acs Photonics. 7: 1636-1641. PMID 32905301 DOI: 10.1021/Acsphotonics.0C00528  0.507
2020 Bae SH, Kim D, Chang SY, Hur J, Kim H, Lee JW, Zhu B, Han TH, Choi C, Huffaker DL, Di Carlo D, Yang Y, Rim YS. Hybrid Integrated Photomedical Devices for Wearable Vital Sign Tracking. Acs Sensors. PMID 32233394 DOI: 10.1021/Acssensors.9B02529  0.313
2020 Huang J, Zhao C, Nie B, Xie S, Kwan DCM, Meng X, Zhang Y, Huffaker DL, Ma W. High-performance mid-wavelength InAs avalanche photodiode using AlAs 0.13 Sb 0.87 as the multiplication layer Photonics Research. 8: 755-759. DOI: 10.1364/Prj.385177  0.393
2020 Xie S, Li H, Ahmed J, Huffaker DL. 3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode Ieee Photonics Journal. 12: 1-8. DOI: 10.1109/Jphot.2020.3006957  0.379
2020 Gong Y, Wong S, Bennett AJ, Huffaker DL, Oh SS. Topological Insulator Laser Using Valley-Hall Photonic Crystals Acs Photonics. 7: 2089-2097. DOI: 10.1021/Acsphotonics.0C00521  0.358
2020 Santos AJ, Lacroix B, Blanco E, Hurand S, Gómez VJ, Paumier F, Girardeau T, Huffaker DL, Garcia R, Morales FM. Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry Journal of Physical Chemistry C. 124: 1535-1543. DOI: 10.1021/Acs.Jpcc.9B10556  0.338
2020 Mazumder D, Xie J, Kudrynskyi ZR, Wang X, Makarovsky O, Bhuiyan MA, Kim H, Chang T, Huffaker DL, Kovalyuk ZD, Zhang L, Patanè A. Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars Advanced Optical Materials. 2000828. DOI: 10.1002/Adom.202000828  0.362
2020 Chang T, Kim H, Zutter BT, Lee W, Regan BC, Huffaker DL. Silicon Photonics: Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics (Adv. Funct. Mater. 30/2020) Advanced Functional Materials. 30: 2070203. DOI: 10.1002/Adfm.202070203  0.312
2020 Chang T, Kim H, Zutter BT, Lee W, Regan BC, Huffaker DL. Orientation‐controlled selective‐area epitaxy of III–V nanowires on (001) silicon for silicon photonics Advanced Functional Materials. 30: 2002220. DOI: 10.1002/Adfm.202002220  0.339
2019 Ren D, Rong Z, Kim H, Turan D, Huffaker DL. High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays. Optics Letters. 44: 4666-4669. PMID 31568412 DOI: 10.1364/Ol.44.004666  0.421
2019 Ren D, Azizur-Rahman KM, Rong Z, Juang BC, Somasundaram S, Shahili M, Farrell AC, Williams B, Huffaker DL. Room-Temperature Mid-Wavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation. Nano Letters. PMID 30676752 DOI: 10.1021/Acs.Nanolett.8B04420  0.445
2019 Chen A, Juang B, Ren D, Liang B, Prout DL, Chatziioannou AF, Huffaker DL. Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation Japanese Journal of Applied Physics. 58: 90907. DOI: 10.7567/1347-4065/Ab3909  0.364
2019 Delmas M, Kwan DCM, Debnath MC, Liang BL, Huffaker DL. Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection Journal of Physics D: Applied Physics. 52: 475102. DOI: 10.1088/1361-6463/Ab3B6A  0.337
2019 Kim H, Chang T, Lee W, Huffaker DL. III–V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms Applied Physics Letters. 115: 213101. DOI: 10.1063/1.5126721  0.436
2019 Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH, David JPR. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes Nature Photonics. 13: 683-686. DOI: 10.1038/S41566-019-0477-4  0.304
2019 Gómez VJ, Santos AJ, Blanco E, Lacroix B, García R, Huffaker DL, Morales FM. Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires Crystal Growth & Design. 19: 2461-2469. DOI: 10.1021/Acs.Cgd.9B00146  0.353
2019 Kim H, Lee W, Chang T, Huffaker DL. Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms (Phys. Status Solidi RRL 3/2019) Physica Status Solidi (Rrl) - Rapid Research Letters. 13: 1970018. DOI: 10.1002/Pssr.201970018  0.385
2019 Juang B, Chen A, Ren D, Liang B, Prout DL, Chatziioannou AF, Huffaker DL. Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection Advanced Optical Materials. 7: 1900107. DOI: 10.1002/Adom.201900107  0.331
2018 Farrell AC, Meng X, Ren D, Kim H, Senanayake P, Hsieh NY, Rong Z, Chang TY, Azizur-Rahman KM, Huffaker DL. InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single Photon Detection in Free-Running Mode. Nano Letters. PMID 30517782 DOI: 10.1021/Acs.Nanolett.8B04643  0.402
2018 Ren D, Rong Z, Azizur-Rahman KM, Somasundaram S, Shahili M, Huffaker DL. Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions. Nanotechnology. 30: 044002. PMID 30465548 DOI: 10.1088/1361-6528/Aaed5C  0.401
2018 Ren D, Meng X, Rong Z, Cao M, Farrell AC, Siddharth S, Azizur-Rahman KM, Williams B, Huffaker DL. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with P-N Heterojunctions. Nano Letters. PMID 30444964 DOI: 10.1021/Acs.Nanolett.8B03775  0.434
2018 Ren D, Rong Z, Somasundaram S, Azizur-Rahman KM, Liang B, Huffaker DL. A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires. Nanotechnology. PMID 30240365 DOI: 10.1088/1361-6528/Aae365  0.327
2018 Ren D, Scofield AC, Farrell AC, Rong Z, Haddad MA, Laghumavarapu RB, Liang B, Huffaker DL. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. Nanoscale. PMID 29663009 DOI: 10.1039/C8Nr01908H  0.322
2018 Kim H, Ren D, Farrell A, Huffaker D. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium. Nanotechnology. PMID 29300185 DOI: 10.1088/1361-6528/Aaa52E  0.368
2018 Ren D, Farrell AC, Huffaker DL. Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm Optical Materials Express. 8: 1075-1081. DOI: 10.1364/Ome.8.001075  0.398
2018 Schuck CF, McCown RA, Hush A, Mello A, Roy S, Spinuzzi JW, Liang B, Huffaker DL, Simmonds PJ. Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 031803. DOI: 10.1116/1.5018002  0.399
2018 Wang Y, Sheng X, Yuan Q, Guo Q, Wang S, Fu G, Liang B, Huffaker DL, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ. Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots Journal of Luminescence. 202: 20-26. DOI: 10.1016/J.Jlumin.2018.05.029  0.463
2018 Su L, Liang B, Wang Y, Yuan Q, Guo Q, Wang S, Fu G, Huffaker DL, Mazur YI, Ware ME, Maidaniuk Y, Salamo GJ. Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy Journal of Luminescence. 195: 187-192. DOI: 10.1016/J.Jlumin.2017.11.008  0.456
2018 Delmas M, Debnath MC, Liang BL, Huffaker DL. Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors Infrared Physics & Technology. 94: 286-290. DOI: 10.1016/J.Infrared.2018.09.012  0.377
2018 Kim H, Lee W, Chang T, Huffaker DL. Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms Physica Status Solidi (Rrl) - Rapid Research Letters. 13: 1800489. DOI: 10.1002/Pssr.201800489  0.44
2017 Lee WJ, Kim H, You JB, Huffaker DL. Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator. Scientific Reports. 7: 9543. PMID 28842698 DOI: 10.1038/S41598-017-10031-8  0.41
2017 Kim H, Lee WJ, Farrell AC, Balgarkashi A, Huffaker DL. Telecom-wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator. Nano Letters. PMID 28759243 DOI: 10.1021/Acs.Nanolett.7B01360  0.447
2017 Ren D, Farrell AC, Williams BS, Huffaker DL. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates. Nanoscale. PMID 28580981 DOI: 10.1039/C7Nr00948H  0.408
2017 Kim H, Lee WJ, Farrell AC, Morales JSD, Senanayake PN, Prikhodko SV, Ochalski T, Huffaker DL. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature. Nano Letters. PMID 28535069 DOI: 10.1021/Acs.Nanolett.7B00384  0.447
2017 Wang Y, Sheng X, Guo Q, Li X, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ, Liang B, Huffaker DL. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. Nanoscale Research Letters. 12: 229. PMID 28359139 DOI: 10.1186/S11671-017-1998-8  0.504
2017 Farrell AC, Senanayake PN, Meng X, Hsieh NY, Huffaker DL. Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors. Nano Letters. PMID 28334536 DOI: 10.1021/Acs.Nanolett.7B00024  0.375
2017 Ren D, Farrell AC, Huffaker DL. Selective-area InAsSb Nanowires on InP for 3 – 5 μm Mid-wavelength Infrared Optoelectronics Mrs Advances. 2: 3565-3570. DOI: 10.1557/Adv.2017.365  0.364
2017 Komolibus K, Piwonski T, Reyner CJ, Liang B, Huyet G, Huffaker DL, Viktorov EA, Houlihan J. Absorption dynamics of type-II GaSb/GaAs quantum dots Optical Materials Express. 7: 1424. DOI: 10.1364/OME.7.001424  0.318
2017 Huffaker DL. Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation) Proceedings of Spie. 10193. DOI: 10.1117/12.2265851  0.422
2017 Nelson GT, Juang B, Slocum MA, Bittner ZS, Laghumavarapu RBB, Huffaker DL, Hubbard SM. GaSb on GaAs solar cells Grown using interfacial misfit arrays (Conference Presentation) Proceedings of Spie. 10099: 1009904. DOI: 10.1117/12.2256426  0.391
2017 Morales JSD, Gandan S, Ren D, Ochalski TJ, Huffaker DL. Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources Proceedings of Spie. 10114: 1011409. DOI: 10.1117/12.2252507  0.346
2017 Liang B, Huffaker DL, Mazur YI, Ware M, Salamo GJ, Su L, Wang Y, Guo Q. Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation) Proceedings of Spie. 10114. DOI: 10.1117/12.2251605  0.456
2017 Yerino CD, Liang B, Huffaker DL, Simmonds PJ, Lee ML. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110) Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 010801. DOI: 10.1116/1.4972049  0.384
2017 Su L, Wang Y, Guo Q, Li X, Wang S, Fu G, Mazur YI, Ware ME, Salamo GJ, Liang B, Huffaker DL. Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy Journal of Physics D: Applied Physics. 50: 32LT01. DOI: 10.1088/1361-6463/Aa7B04  0.4
2017 Nelson GT, Juang B, Slocum MA, Bittner ZS, Laghumavarapu RB, Huffaker DL, Hubbard SM. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell Applied Physics Letters. 111: 231104. DOI: 10.1063/1.4991548  0.367
2017 Ma YJ, Zhang YG, Gu Y, Xi SP, Chen XY, Liang B, Juang B, Huffaker DL, Du B, Shao XM, Fang JX. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy Aip Advances. 7: 75117. DOI: 10.1063/1.4989884  0.352
2017 Debnath MC, Liang B, Laghumavarapu RB, Wang G, Das A, Juang B, Huffaker DL. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells Journal of Applied Physics. 121: 214304. DOI: 10.1063/1.4984832  0.477
2017 Ma Y, Zhang Y, Gu Y, Chen X, Wang P, Juang B, Farrell A, Liang B, Huffaker DL, Shi Y, Ji W, Du B, Xi S, Tang H, Fang J. Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications Advanced Optical Materials. 5: 1601023. DOI: 10.1002/Adom.201601023  0.495
2016 Wang G, Liang B, Juang BC, Das A, Debnath MC, Huffaker DL, Mazur YI, Ware ME, Salamo GJ. Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots. Nanotechnology. 27: 465701. PMID 27749272 DOI: 10.1088/0957-4484/27/46/465701  0.464
2016 Kim H, Farrell AC, Senanayake PN, Lee WJ, Huffaker DL. Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links. Nano Letters. PMID 26901448 DOI: 10.1021/Acs.Nanolett.5B04883  0.384
2016 Scofield AC, Hudson AI, Liang BL, Wells NP, Huffaker DL, Lotshaw WT. Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics Proceedings of Spie. 9835. DOI: 10.1117/12.2224308  0.336
2016 Couto ODD, De Almeida PT, Dos Santos GE, Balanta MAG, Andriolo HF, Brum JA, Brasil MJSP, Iikawa F, Liang BL, Huffaker DL. Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures Journal of Applied Physics. 120. DOI: 10.1063/1.4961534  0.477
2016 Debnath MC, Mishima TD, Santos MB, Cheng Y, Whiteside VR, Sellers IR, Hossain K, Laghumavarapu RB, Liang BL, Huffaker DL. High-density InAs/GaAs1- xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells Journal of Applied Physics. 119. DOI: 10.1063/1.4943631  0.493
2016 Lee WJ, Kim H, Farrell AC, Senanayake P, Huffaker DL. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources Applied Physics Letters. 108. DOI: 10.1063/1.4942777  0.41
2016 Komolibus K, Scofield AC, Gradkowski K, Ochalski TJ, Kim H, Huffaker DL, Huyet G. Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation Applied Physics Letters. 108. DOI: 10.1063/1.4941435  0.374
2016 Ariyawansa G, Reyner CJ, Steenbergen EH, Duran JM, Reding JD, Scheihing JE, Bourassa HR, Liang BL, Huffaker DL. InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors Applied Physics Letters. 108. DOI: 10.1063/1.4939904  0.336
2015 Lee WJ, Senanayake PN, Farrell AC, Lin A, Hung CH, Huffaker DL. High quantum efficiency nanopillar photodiodes overcoming the diffraction limit of light. Nano Letters. PMID 26682745 DOI: 10.1021/Acs.Nanolett.5B03485  0.495
2015 Farrell AC, Senanayake P, Hung CH, El-Howayek G, Rajagopal A, Currie M, Hayat MM, Huffaker DL. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes. Scientific Reports. 5: 17580. PMID 26627932 DOI: 10.1038/Srep17580  0.351
2015 Farrell AC, Lee WJ, Senanayake P, Haddad MA, Prikhodko SV, Huffaker DL. High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition. Nano Letters. 15: 6614-9. PMID 26422559 DOI: 10.1021/Acs.Nanolett.5B02389  0.346
2015 Hung CH, Senanayake P, Lee WJ, Farrell A, Hsieh N, Huffaker DL. Nanopillar optical antenna nBn detectors for subwavelength infrared pixels Proceedings of Spie - the International Society For Optical Engineering. 9481. DOI: 10.1117/12.2177483  0.365
2015 Komolibus K, Scofield AC, Ochalski TJ, Kelleher B, Goulding D, Huffaker DL, Huyet G. Complex emission dynamics from InGaAs/GaAs core-shell nanopillars Proceedings of Spie. 9373. DOI: 10.1117/12.2080269  0.386
2015 Hubbard SM, Hellstroem S, Bittner ZS, Laghumavarapu RB, Huffaker D. Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355971  0.316
2015 Juang BC, Laghumavarapu RB, Foggo BJ, Simmonds PJ, Lin A, Liang B, Huffaker DL. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays Applied Physics Letters. 106. DOI: 10.1063/1.4915258  0.38
2015 Ji HM, Liang B, Simmonds PJ, Juang BC, Yang T, Young RJ, Huffaker DL. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence Applied Physics Letters. 106. DOI: 10.1063/1.4914895  0.457
2015 Komolibus K, Piwonski T, Gradkowski K, Reyner CJ, Liang B, Huyet G, Huffaker DL, Houlihan J. Ultrafast dynamics of type-II GaSb/GaAs quantum dots Applied Physics Letters. 106. DOI: 10.1063/1.4906106  0.455
2015 Zhao Z, Laghumavarapu RB, Simmonds PJ, Ji H, Liang B, Huffaker DL. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.049  0.482
2015 Marshall ARJ, Craig AP, Reyner CJ, Huffaker DL. GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface Infrared Physics and Technology. 70: 168-170. DOI: 10.1016/J.Infrared.2014.08.014  0.346
2014 Simmonds PJ, Sun M, Laghumavarapu RB, Liang B, Norman AG, Luo JW, Huffaker DL. Improved quantum dot stacking for intermediate band solar cells using strain compensation. Nanotechnology. 25: 445402. PMID 25319397 DOI: 10.1088/0957-4484/25/44/445402  0.353
2014 Scofield AC, Lin A, Haddad M, Huffaker DL. Axial diffusion barriers in near-infrared nanopillar LEDs. Nano Letters. 14: 6037-41. PMID 25280080 DOI: 10.1021/Nl501022V  0.375
2014 Bittner ZS, Laghumavarapu RB, Hellstroem S, Huffaker D, Liang B, Hubbard SM. Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3626-3628. DOI: 10.1109/PVSC.2014.6924892  0.322
2014 Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944  0.464
2014 Bittner ZS, Hellstroem S, Polly SJ, Laghumavarapu RB, Liang B, Huffaker DL, Hubbard SM. Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4904076  0.465
2014 Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747  0.454
2014 Craig AP, Reyner CJ, Marshall ARJ, Huffaker DL. Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions - Composite structures grown using interfacial misfit arrays Applied Physics Letters. 104. DOI: 10.1063/1.4879848  0.35
2014 Borrego JM, Brown E, Greiff P, Huffaker DL, Laghumavarapu RB, Kim J, Dutta PS. Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate Journal of Renewable and Sustainable Energy. 6. DOI: 10.1063/1.4828368  0.377
2014 Mariani G, Wang Y, Kaner RB, Huffaker DL. Hybrid solar cells: Materials, interfaces, and devices Springer Series in Materials Science. 190: 357-387. DOI: 10.1007/978-3-319-01988-8_12  0.472
2014 Lin A, Shapiro JN, Eisele H, Huffaker DL. Tuning the au-free InSb nanocrystal morphologies grown by patterned metal-organic chemical vapor deposition Advanced Functional Materials. 24: 4311-4316. DOI: 10.1002/Adfm.201303390  0.323
2013 Shapiro JN, Lin A, Ratsch C, Huffaker DL. Temperature dependence of stacking faults in catalyst-free GaAs nanopillars. Nanotechnology. 24: 475601. PMID 24192402 DOI: 10.1088/0957-4484/24/47/475601  0.301
2013 Gu Q, Gicquel-Guézo M, Loualiche S, Pouliquen JL, Batte T, Folliot H, Dehaese O, Grillot F, Battie Y, Loiseau A, Liang B, Huffaker D. Photonics based on carbon nanotubes. Nanoscale Research Letters. 8: 300. PMID 23803293 DOI: 10.1186/1556-276X-8-300  0.382
2013 Gao J, Combrie S, Liang B, Schmitteckert P, Lehoucq G, Xavier S, Xu X, Busch K, Huffaker DL, De Rossi A, Wong CW. Strongly coupled slow-light polaritons in one-dimensional disordered localized states. Scientific Reports. 3: 1994. PMID 23771242 DOI: 10.1038/Srep01994  0.445
2013 Oh DY, Kim SH, Huang J, Scofield A, Huffaker D, Scherer A. Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching. Nanotechnology. 24: 265201. PMID 23733244 DOI: 10.1088/0957-4484/24/26/265201  0.478
2013 Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y  0.43
2013 Mariani G, Zhou Z, Scofield A, Huffaker DL. Direct-bandgap epitaxial core-multishell nanopillar photovoltaics featuring subwavelength optical concentrators. Nano Letters. 13: 1632-7. PMID 23485255 DOI: 10.1021/Nl400083G  0.599
2013 Mariani G, Scofield AC, Hung CH, Huffaker DL. GaAs nanopillar-array solar cells employing in situ surface passivation. Nature Communications. 4: 1497. PMID 23422665 DOI: 10.1038/Ncomms2509  0.64
2013 Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL. Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure. Nanotechnology. 24: 075701. PMID 23358560 DOI: 10.1088/0957-4484/24/7/075701  0.453
2013 Liu W, Liang B, Huffaker D, Fetterman H. Anisotropic electro-optic effect on InGaAs quantum dot chain modulators Optics Letters. 38: 4262-4264. DOI: 10.1364/Ol.38.004262  0.399
2013 Mariani G, Huffaker DL. Direct-bandgap nanopillar photovoltaics based on patterned catalyst-free epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8725. DOI: 10.1117/12.2018125  0.638
2013 Mariani G, Tu C, Zhou Z, Scofield A, Shapiro J, Huffaker DL. Experimental matrix study of leakage current in nanopillar-based devices towards high-efficiency photovoltaics Conference Record of the Ieee Photovoltaic Specialists Conference. 3200-3202. DOI: 10.1109/PVSC.2013.6745133  0.565
2013 Sun M, Simmonds PJ, Laghumavarapu RB, Lin A, Reyner CJ, Liang B, Huffaker DL. Towards intermediate-band solar cells with InAs/AlAsSb quantum dots Conference Record of the Ieee Photovoltaic Specialists Conference. 3493-3496. DOI: 10.1109/PVSC.2013.6744245  0.343
2013 Laghumavarapu RB, Liang BL, Bittner Z, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 292-295. DOI: 10.1109/PVSC.2013.6744150  0.312
2013 Yu TH, Yan L, You W, Laghumavarapu RB, Huffaker D, Ratsch C. The effect of passivation on different GaAs surfaces Applied Physics Letters. 103. DOI: 10.1063/1.4826480  0.308
2013 Thoma J, Liang B, Lewis L, Hegarty SP, Huyet G, Huffaker DL. Carrier localization and in-situ annealing effect on quaternary Ga 1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition Applied Physics Letters. 102. DOI: 10.1063/1.4795866  0.418
2013 Nowozin T, Bonato L, Högner A, Wiengarten A, Bimberg D, Lin WH, Lin SY, Reyner CJ, Liang BL, Huffaker DL. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots Applied Physics Letters. 102. DOI: 10.1063/1.4791678  0.406
2013 Thoma J, Liang B, Lewis L, Hegarty SP, Huyet G, Huffaker DL. Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices Applied Physics Letters. 102. DOI: 10.1063/1.4791565  0.547
2013 Sun M, Simmonds PJ, Babu Laghumavarapu R, Lin A, Reyner CJ, Duan HS, Liang B, Huffaker DL. Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots Applied Physics Letters. 102. DOI: 10.1063/1.4776221  0.481
2013 Thoma J, Liang B, Reyner C, Ochalski T, Williams D, Hegarty SP, Huffaker D, Huyet G. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices Applied Physics Letters. 102. DOI: 10.1063/1.4775371  0.479
2013 Mariani G, Scofield AC, Hung C, Huffaker DL. Erratum: GaAs nanopillar-array solar cells employing in situ surface passivation Nature Communications. 4. DOI: 10.1038/Ncomms3026  0.541
2013 Laghumavarapu RB, Liang BL, Bittner ZS, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells Solar Energy Materials and Solar Cells. 114: 165-171. DOI: 10.1016/J.Solmat.2013.02.027  0.424
2013 Liang B, Wong PS, Tran T, Dorogan VG, Mazur YI, Ware ME, Salamo GJ, Shih CK, Huffaker DL. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement Nano Research. 6: 235-242. DOI: 10.1007/S12274-013-0299-5  0.481
2012 Senanayake P, Hung CH, Farrell A, Ramirez DA, Shapiro J, Li CK, Wu YR, Hayat MM, Huffaker DL. Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors. Nano Letters. 12: 6448-52. PMID 23206195 DOI: 10.1021/Nl303837Y  0.368
2012 Senanayake P, Hung CH, Shapiro J, Scofield A, Lin A, Williams BS, Huffaker DL. 3D nanopillar optical antenna photodetectors. Optics Express. 20: 25489-96. PMID 23187366 DOI: 10.1364/Oe.20.025489  0.313
2012 Mariani G, Wang Y, Wong PS, Lech A, Hung CH, Shapiro J, Prikhodko S, El-Kady M, Kaner RB, Huffaker DL. Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering. Nano Letters. 12: 3581-6. PMID 22697614 DOI: 10.1021/Nl301251Q  0.599
2012 Lin A, Shapiro JN, Senanayake PN, Scofield AC, Wong PS, Liang B, Huffaker DL. Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy. Nanotechnology. 23: 105701. PMID 22349093 DOI: 10.1088/0957-4484/23/10/105701  0.303
2012 Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028  0.306
2012 Ouyang L, Steenbergen EH, Zhang YH, Nunna K, Huffaker DL, Smith DJ. Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672026  0.335
2012 Mariani G, Scofield A, Huffaker DL. High-perfomance patterned arrays of core-shell GaAs nanopillar solar cells with in-situ ingap passivation layer Conference Record of the Ieee Photovoltaic Specialists Conference. 3080-3082. DOI: 10.1109/PVSC.2012.6318232  0.539
2012 Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique Ieee Photonics Technology Letters. 24: 218-220. DOI: 10.1109/Lpt.2011.2177253  0.394
2012 Gradkowski K, Ochalski TJ, Pavarelli N, Liu HY, Tatebayashi J, Williams DP, Mowbray DJ, Huyet G, Huffaker DL. Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035432  0.463
2012 Scofield AC, Lin A, Shapiro JN, Senanayake PN, Mariani G, Haddad M, Liang BL, Huffaker DL. Composite axial/core-shell nanopillar light-emitting diodes at 1.3 μm Applied Physics Letters. 101. DOI: 10.1063/1.4738997  0.59
2012 Simmonds PJ, Babu Laghumavarapu R, Sun M, Lin A, Reyner CJ, Liang B, Huffaker DL. Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers Applied Physics Letters. 100. DOI: 10.1063/1.4729419  0.503
2012 Wu J, Makableh YFM, Vasan R, Manasreh MO, Liang B, Reyner CJ, Huffaker DL. Strong interband transitions in InAs quantum dots solar cell Applied Physics Letters. 100. DOI: 10.1063/1.3681360  0.488
2012 Mazur YI, Dorogan VG, Salamo GJ, Tarasov GG, Liang BL, Reyner CJ, Nunna K, Huffaker DL. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures Applied Physics Letters. 100. DOI: 10.1063/1.3676274  0.478
2012 Mariani G, Wang Y, Wong PS, Lech A, Hung CH, Shapiro J, Prikhodko S, El-Kady M, Kaner RB, Huffaker DL. Three-dimensional core-shell hybrid solar cells via controlled in situ materials engineering Nano Letters. 12: 3581-3586. DOI: 10.1021/nl301251q  0.455
2012 Gao J, Combrie S, Liang B, Lehoucq G, Huffaker DL, De Rossi A, Wong CW. Strong coupling between single quantum dot and localized mode in photonic crystal waveguide 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.314
2011 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang B, Scherer A, Huffaker DL. Bottom-up photonic crystal lasers. Nano Letters. 11: 5387-90. PMID 22098379 DOI: 10.1021/Nl2030163  0.492
2011 Senanayake P, Hung CH, Shapiro J, Lin A, Liang B, Williams BS, Huffaker DL. Surface plasmon-enhanced nanopillar photodetectors. Nano Letters. 11: 5279-83. PMID 22077757 DOI: 10.1021/Nl202732R  0.316
2011 Huang S, Balakrishnan G, Huffaker DL. Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study. Journal of Nanoscience and Nanotechnology. 11: 5108-13. PMID 21770151 DOI: 10.1166/Jnn.2011.4111  0.317
2011 Mariani G, Wong PS, Katzenmeyer AM, Léonard F, Shapiro J, Huffaker DL. Patterned radial GaAs nanopillar solar cells. Nano Letters. 11: 2490-4. PMID 21604750 DOI: 10.1021/Nl200965J  0.624
2011 Scofield AC, Shapiro JN, Lin A, Williams AD, Wong PS, Liang BL, Huffaker DL. Bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Nano Letters. 11: 2242-6. PMID 21591759 DOI: 10.1021/Nl200355D  0.397
2011 Nong H, Gicquel-Guézo M, Bramerie L, Perrin M, Grillot F, Fleurier R, Liang B, Huffaker DL, Levallois C, Pouliquen JL, Corre AL, Dehaese O, Loualiche S. Enhanced properties in single-walled carbon nanotubes based saturable absorber for all optical signal regeneration Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.040206  0.331
2011 Mariani G, Wang Y, Wong PS, Kaner RB, Huffaker DL. Electrochemical polymerization of PEDOT on catalyst-free patterned GaAs nanopillars for high efficiency hybrid photovoltaics: 37 th IEEE photovoltaic specialists conference Conference Record of the Ieee Photovoltaic Specialists Conference. 002639-002641. DOI: 10.1109/PVSC.2011.6186490  0.485
2011 Liu W, Kim RS, Liang B, Huffaker DL, Fetterman HR. High-speed inas quantum-dot electrooptic phase modulators Ieee Photonics Technology Letters. 23: 1748-1750. DOI: 10.1109/Lpt.2011.2168201  0.396
2011 Shapiro JN, Lin A, Huffaker DL, Ratsch C. Potential energy surface of in and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.085322  0.325
2011 Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL. Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface Nanotechnology. 22. DOI: 10.1088/0957-4484/22/5/055706  0.482
2011 Evoen V, Zhou H, Gao L, Pozuelo M, Liang B, Tatebeyashi J, Kodambaka S, Huffaker DL, Hicks RF. Self-catalyzed vaporliquidsolid growth of InP/InAsP coreshell nanopillars Journal of Crystal Growth. 314: 34-38. DOI: 10.1016/J.Jcrysgro.2010.11.092  0.317
2011 Mariani G, Wang Y, Wong PS, Laghumavarapu RB, Kaner RB, Huffaker DL. Hybrid photovoltaics based on electrochemical polymerization of PEDOT on patterned, catalyst free nanopillars Acs National Meeting Book of Abstracts.  0.444
2011 Gao J, Combrie S, Liang B, Lehoucq G, Huffaker DL, Englund D, De Rossi A, Wong CW. Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities Optics Infobase Conference Papers.  0.361
2010 Katzenmeyer AM, Léonard F, Talin AA, Wong PS, Huffaker DL. Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires. Nano Letters. 10: 4935-8. PMID 21053980 DOI: 10.1021/Nl102958G  0.321
2010 He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ. Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. Nano Letters. 10: 3052-6. PMID 20698619 DOI: 10.1021/Nl102237N  0.42
2010 Wong PS, Liang B, Huffaker DL. InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation. Journal of Nanoscience and Nanotechnology. 10: 1537-50. PMID 20355542 DOI: 10.1166/Jnn.2010.2025  0.545
2010 Laghumavarapu RB, Mariani G, De Villers BT, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid solar cells using gaas nanopillars Conference Record of the Ieee Photovoltaic Specialists Conference. 943-945. DOI: 10.1109/PVSC.2010.5614637  0.496
2010 Shapiro JN, Lin A, Wong PS, Scofield AC, Tu C, Senanayake PN, Mariani G, Liang BL, Huffaker DL. InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy Applied Physics Letters. 97. DOI: 10.1063/1.3526734  0.584
2010 Senanayake P, Lin A, Mariani G, Shapiro J, Tu C, Scofield AC, Wong PS, Liang B, Huffaker DL. Photoconductive gain in patterned nanopillar photodetector arrays Applied Physics Letters. 97. DOI: 10.1063/1.3517491  0.548
2010 Wong PS, Liang BL, Lin A, Tatebayashi J, Huffaker DL. 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers Applied Physics Letters. 97. DOI: 10.1063/1.3499287  0.509
2010 Gradkowski K, Ochalski TJ, Pavarelli N, Williams DP, Huyet G, Liang B, Huffaker DL. Coulomb effect inhibiting spontaneous emission in charged quantum dot Applied Physics Letters. 97. DOI: 10.1063/1.3484143  0.471
2010 Mariani G, Laghumavarapu RB, Tremolet De Villers B, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid conjugated polymer solar cells using patterned GaAs nanopillars Applied Physics Letters. 97. DOI: 10.1063/1.3459961  0.605
2010 Tatebayashi J, Lin A, Wong PS, Hick RF, Huffaker DL. Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon Journal of Applied Physics. 108. DOI: 10.1063/1.3457355  0.362
2010 Tatebayashi J, Mariani G, Lin A, Hicks RF, Huffaker DL. Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes Applied Physics Letters. 96. DOI: 10.1063/1.3455340  0.576
2010 Wong PS, Liang B, Molecke R, Tatebayashi J, Huffaker DL. Controlled formation and dynamic wulff simulation of equilibrium crystal shapes of GaAs pyramidal structures on nanopatterned substrates Crystal Growth and Design. 10: 2509-2514. DOI: 10.1021/Cg900785F  0.307
2009 Jallipalli A, Balakrishnan G, Huang Sh, Rotter T, Nunna K, Liang B, Dawson L, Huffaker D. Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations. Nanoscale Research Letters. 4: 1458-62. PMID 20652143 DOI: 10.1007/S11671-009-9420-9  0.346
2009 Liang B, Lin A, Pavarelli N, Reyner C, Tatebayashi J, Nunna K, He J, Ochalski TJ, Huyet G, Huffaker DL. GaSb/GaAs type-II quantum dots grown by droplet epitaxy. Nanotechnology. 20: 455604. PMID 19834245 DOI: 10.1088/0957-4484/20/45/455604  0.464
2009 Wong PS, Liang BL, Tatebayashi J, Xue L, Nuntawong N, Kutty MN, Brueck SR, Huffaker DL. Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots. Nanotechnology. 20: 035302. PMID 19417291 DOI: 10.1088/0957-4484/20/3/035302  0.496
2009 Gao L, Woo RL, Liang B, Pozuelo M, Prikhodko S, Jackson M, Goel N, Hudait MK, Huffaker DL, Goorsky MS, Kodambaka S, Hicks RF. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. Nano Letters. 9: 2223-8. PMID 19413340 DOI: 10.1021/Nl803567V  0.362
2009 Rotter TJ, Tatebayashi J, Senanayake P, Balakrishnan G, Rattunde M, Wagner J, Hader J, Moloney JV, Koch SW, Dawson LR, Huffaker DL. Continuous-wave room-temperature operation of 2-μm sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates Applied Physics Express. 2. DOI: 10.1143/Apex.2.112102  0.465
2009 Liang BL, Wong PS, Dorogan BVG, Tatebayashi J, Albrecht AR, Xiang H, Mazur YI, Salamo GJ, Brueck SRJ, Huffaker DL. Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.809784  0.364
2009 Tatebayashi J, Liang B, Bussian DA, Htoon H, Huang S, Balakrishnan G, Klimov V, Dawson LR, Huffaker DL. Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode Ieee Transactions On Nanotechnology. 8: 269-274. DOI: 10.1109/Tnano.2008.2008717  0.461
2009 Tatebayashi J, Jallipalli A, Narayanan Kutty M, Huang S, Nunna K, Balakrishnan G, Ralph Dawson L, Huffaker DL. Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates Ieee Journal On Selected Topics in Quantum Electronics. 15: 716-723. DOI: 10.1109/Jstqe.2009.2015678  0.439
2009 Tatebayashi J, Nuntawong N, Wong PS, Xin YC, Lester LF, Huffaker DL. Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/7/073002  0.427
2009 Jallipalli A, Nunna K, Kutty MN, Balakrishnan G, Dawson LR, Huffaker DL. Electronic characteristics of the interfacial states embedded in "buffer-free" GaSb/GaAs (001) heterojunctions Applied Physics Letters. 95. DOI: 10.1063/1.3266835  0.368
2009 Yarborough JM, Lai YY, Kaneda Y, Hader J, Moloney JV, Rotter TJ, Balakrishnan G, Hains C, Huffaker D, Koch SW, Bedford R. Record pulsed power demonstration of a 2 μm GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate Applied Physics Letters. 95. DOI: 10.1063/1.3212891  0.405
2009 Jallipalli A, Nunna K, Kutty MN, Balakrishnan G, Lush GB, Dawson LR, Huffaker DL. Compensation of interfacial states located inside the "buffer- free" GaSb/GaAs (001) heterojunction via δ -doping Applied Physics Letters. 95. DOI: 10.1063/1.3210783  0.385
2009 Gradkowski K, Pavarelli N, Ochalski TJ, Williams DP, Tatebayashi J, Huyet G, O'Reilly EP, Huffaker DL. Complex emission dynamics of type-II GaSb/GaAs quantum dots Applied Physics Letters. 95. DOI: 10.1063/1.3202419  0.466
2009 Huang S, Balakrishnan G, Huffaker DL. Interfacial misfit array formation for GaSb growth on GaAs Journal of Applied Physics. 105. DOI: 10.1063/1.3129562  0.344
2009 Gradkowski K, Ochalski TJ, Williams DP, Tatebayashi J, Khoshakhlagh A, Balakrishnan G, O'Reilly EP, Huyet G, Dawson LR, Huffaker DL. Optical transition pathways in type-II Ga(As)Sb quantum dots Journal of Luminescence. 129: 456-460. DOI: 10.1016/J.Jlumin.2008.11.012  0.477
2009 Gradkowski K, Ochalski TJ, Williams DP, Healy SB, Tatebayashi J, Balakrishnan G, O'Reilly EP, Huyet G, Huffaker DL. Coulomb effects in type-II Ga(As)Sb quantum dots Physica Status Solidi (B) Basic Research. 246: 752-755. DOI: 10.1002/Pssb.200880630  0.479
2009 Ochalski TJ, Gradkowski K, Pavarelli N, Willams DP, O'Reilly EP, Huyet G, Tatebayashi J, Huffaker DL. Dynamic of the optical matrix element in type II GaAsSb/GaAs quantum dots for laser applications Optics Infobase Conference Papers.  0.337
2009 Evoen V, Gao L, Pozuelo M, Chowdhury S, Tatebeyashi J, Liang B, Kodambaka S, Huffaker DL, Hicks RF. InP/InAs core-shell nanopillars on InP (111)B Aiche Annual Meeting, Conference Proceedings.  0.338
2008 Wong PS, Liang BL, Dorogan VG, Albrecht AR, Tatebayashi J, He X, Nuntawong N, Mazur YI, Salamo GJ, Brueck SR, Huffaker DL. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Nanotechnology. 19: 435710. PMID 21832714 DOI: 10.1088/0957-4484/19/43/435710  0.501
2008 Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well. Nanotechnology. 19: 295704. PMID 21730609 DOI: 10.1088/0957-4484/19/29/295704  0.466
2008 Balakrishnan G, Rotter TJ, Jallipalli A, Dawson LR, Huffaker DL. Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 μ VECSELs Proceedings of Spie - the International Society For Optical Engineering. 6871. DOI: 10.1117/12.776256  0.376
2008 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Nuntawong N, Balakrishnan G, Dawson LR, Huffaker DL. Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates Proceedings of Spie - the International Society For Optical Engineering. 6909. DOI: 10.1117/12.775340  0.36
2008 Timm R, Lenz A, Eisele H, Ivanova L, Dähne M, Balakrishnan G, Huffaker DL, Farrer I, Ritchie DA. Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1492-1503. DOI: 10.1116/1.2952451  0.458
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  0.343
2008 Wong PS, Liang BL, Nuntawong N, Tatebayashi J, Huffaker DL, Dorogan VG, Mazur YI, Salamo GJ. Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2008.4552691  0.36
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  0.341
2008 Wong PS, Liang BL, Nuntawong N, Xue L, Tatebayashi J, Brueck SRJ, Huffaker DL. 1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703006  0.383
2008 Timm R, Eisele H, Lenz A, Ivanova L, Balakrishnan G, Huffaker DL, Dähne M. Self-organized formation of GaSb/GaAs quantum rings Physical Review Letters. 101. DOI: 10.1103/PhysRevLett.101.256101  0.372
2008 Eyink KG, Tomich DH, Mitchel WC, Grazulis L, Carlin JA, Mahalingam K, Jallipalli A, Balakrishnan G, Huffaker D, Elhamri S. Electrical and structural characterization of a single GaSb/InAs/GaSb quantum well grown on GaAs using interface misfit dislocations Journal of Applied Physics. 104. DOI: 10.1063/1.2982277  0.442
2008 Huang SH, Balakrishnan G, Khoshakhlagh A, Dawson LR, Huffaker DL. Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate Applied Physics Letters. 93. DOI: 10.1063/1.2970997  0.331
2008 Lee SC, Huffaker DL, Brueck SRJ. Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth Applied Physics Letters. 92. DOI: 10.1063/1.2830988  0.326
2008 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Rotter TJ, Balakrishnan G, Dawson LR, Huffaker DL. Device characteristics of GaInSb/AlGaSb quantum well lasers monolithically grown on GaAs substrates by using an interfacial misfit array Journal of Electronic Materials. 37: 1758-1763. DOI: 10.1007/S11664-008-0534-0  0.516
2008 Huffaker DL. Long wavelength lasers on silicon Ecio'08 Eindhoven - Proceedings of the 14th European Conference On Integrated Optics and Technical Exhibition, Contributed and Invited Papers. 91-94.  0.307
2007 Huffaker DL, Balakrishnan G, Jallipalli A, Kutty MN, Huang SH, Dawson LR. Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays Proceedings of Spie - the International Society For Optical Engineering. 6775. DOI: 10.1117/12.737224  0.323
2007 Laghumavarapu RB, Nuntawong N, Albrecht AR, Huffaker DL. Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling Proceedings of Spie - the International Society For Optical Engineering. 6461. DOI: 10.1117/12.708337  0.425
2007 Yang T, Balakrishnan G, Lu L, Shih MH, O'Brien JD, Huffaker DL. Room temperature InGaSb quantum well microcylinder lasers at 2 μm grown monolithically on a silicon substrate Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 731-732. DOI: 10.1116/1.2778693  0.479
2007 Mehta M, Jallipalli A, Tatebayashi J, Kutty MN, Albrecht A, Balakrishnan G, Dawson LR, Huffaker DL. Room-temperature operation of buffer-free GaSb-AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 μm Ieee Photonics Technology Letters. 19: 1628-1630. DOI: 10.1109/Lpt.2007.904928  0.496
2007 Huffaker DL, Mehta M, Balakrishnan G, Huang S, Khoshakhlagh A, Patel P, Kutty MN, Dawson LR. GaSb QW-based 'buffer-free' vertical LED monolithically embedded within a GaAs cavity using interfacial misfit arrays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 180-181. DOI: 10.1109/LEOS.2006.278951  0.335
2007 Wong PS, Nuntawong N, Xue L, Tatebayashi J, Albrecht A, Rotella P, Brueck SRJ, Huffaker DL. Controlled crystal structure in patterned InAs quantum dot formation by selective area MOCVD Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 108-109. DOI: 10.1109/LEOS.2006.278879  0.319
2007 Huffaker DL, Balakrishnan G, Jallipalli A, Kutty MN, Tatebayashi J, Huang SH, Dawson LR, Mi Z, Bhattacharya P. 1.54 μm monolithically integrated GaSb quantum well laser diode on silicon operating at 77K 2007 International Nano-Optelectronics Workshop, Inow. 16-17. DOI: 10.1109/INOW.2007.4302845  0.399
2007 Mehta M, Balakrishnan G, Jallapali A, Kutty MN, Dawson LR, Huffaker DL. 1.65 μm buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature 65th Drc Device Research Conference. 193-194. DOI: 10.1109/DRC.2007.4373714  0.424
2007 Tatebayashi J, Khoshakhlagh A, Balakrishnan G, Huang SH, Mehta M, Dawson LR, Huffaker DL. Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well 65th Drc Device Research Conference. 73-74. DOI: 10.1109/DRC.2007.4373656  0.383
2007 Mehta M, Balakrishnan G, Kutty MN, Patel P, Dawson LR, Huffaker DL. 1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452800  0.395
2007 Liang BL, Wong PS, Nuntawong N, Albrecht AR, Tatebayashi J, Rotter TJ, Balakrishnan G, Huffaker DL. Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids Applied Physics Letters. 91. DOI: 10.1063/1.2821121  0.481
2007 Laghumavarapu RB, El-Emawy M, Nuntawong N, Moscho A, Lester LF, Huffaker DL. Improved device performance of InAsGaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters. 91. DOI: 10.1063/1.2816904  0.449
2007 Tatebayashi J, Jallipalli A, Kutty MN, Huang SH, Balakrishnan G, Dawson LR, Huffaker DL. Room-temperature lasing at 1.82 μm of GaInSbAlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array Applied Physics Letters. 91. DOI: 10.1063/1.2793186  0.517
2007 Tran T, Muller A, Shih CK, Wong PS, Balakrishnan G, Nuntawong N, Tatebayashi J, Huffaker DL. Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids Applied Physics Letters. 91. DOI: 10.1063/1.2790498  0.479
2007 Huang SH, Balakrishnan G, Mehta M, Dawson LR, Huffaker DL, Li P. Arsenic-induced etched nanovoids on GaSb (100) Journal of Applied Physics. 102. DOI: 10.1063/1.2772532  0.35
2007 Tatebayashi J, Khoshakhlagh A, Huang SH, Balakrishnan G, Dawson LR, Huffaker DL, Bussian DA, Htoon H, Klimov V. Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well Applied Physics Letters. 90. DOI: 10.1063/1.2752018  0.535
2007 Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL. GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. 90. DOI: 10.1063/1.2734492  0.443
2007 Wong PS, Balakrishnan G, Nuntawong N, Tatebayashi J, Huffaker DL. Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids Applied Physics Letters. 90. DOI: 10.1063/1.2732825  0.454
2007 Nuntawong N, Tatebayashi J, Wong PS, Huffaker DL. Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures Applied Physics Letters. 90. DOI: 10.1063/1.2730732  0.392
2007 Huang SH, Balakrishnan G, Mehta M, Khoshakhlagh A, Dawson LR, Huffaker DL, Li P. Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb Applied Physics Letters. 90. DOI: 10.1063/1.2723649  0.387
2007 Balakrishnan G, Mehta M, Kutty MN, Patel P, Albrecht AR, Rotella P, Krishna S, Dawson LR, Huffaker DL. Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates Electronics Letters. 43: 244-245. DOI: 10.1049/El:20073333  0.39
2007 Jallipalli A, Kutty MN, Balakrishnan G, Tatebayashi J, Nuntawong N, Huang SH, Dawson LR, Huffaker DL, Mi Z, Bhattacharya P. 1.54μm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays Electronics Letters. 43: 1198-1199. DOI: 10.1049/El:20072441  0.473
2007 Tatebayashi J, Laghumavarapu RB, Nuntawong N, Huffaker DL. Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots Electronics Letters. 43: 410-412. DOI: 10.1049/El:20070245  0.404
2007 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials Journal of Crystal Growth. 303: 449-455. DOI: 10.1016/J.Jcrysgro.2006.12.032  0.309
2006 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si Mrs Proceedings. 934. DOI: 10.1557/Proc-0934-I09-05  0.325
2006 Nuntawong N, Tatebayashi J, Wong PS, Xin YC, Hains CP, Huang S, Lester LF, Huffaker DL. Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 6129. DOI: 10.1117/12.656492  0.385
2006 Balakrishnan G, Jallipalli A, Rotella P, Huang S, Khoshakhlagh A, Amtout A, Krishna S, Dawson LR, Huffaker DL. Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(1 0 0) substrate Ieee Journal On Selected Topics in Quantum Electronics. 12: 1636-1641. DOI: 10.1109/Jstqe.2006.885342  0.501
2006 Mehta M, Balakrishnan G, Huang S, Khoshakhlagh A, Jallipalli A, Patel P, Kutty MN, Dawson LR, Huffaker DL. GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays Applied Physics Letters. 89. DOI: 10.1063/1.2396897  0.454
2006 Tatebayashi J, Khoshakhlagh A, Huang SH, Dawson LR, Balakrishnan G, Huffaker DL. Formation and optical characteristics of strain-relieved and densely stacked GaSbGaAs quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2390654  0.445
2006 Balakrishnan G, Tatebayashi J, Khoshakhlagh A, Huang SH, Jallipalli A, Dawson LR, Huffaker DL. III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Applied Physics Letters. 89. DOI: 10.1063/1.2362999  0.463
2006 Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang SH, Hains CP, Lester LF, Huffaker DL. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition Applied Physics Letters. 88. DOI: 10.1063/1.2208553  0.485
2006 Huang SH, Balakrishnan G, Khoshakhlagh A, Jallipalli A, Dawson LR, Huffaker DL. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs Applied Physics Letters. 88. DOI: 10.1063/1.2172742  0.363
2006 Huffaker DL, Hains CP, Nuntawong N, Xin YC, Wong PS, Xue L, Brueck SRJ, Lester L. Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2165415  0.479
2006 Balakrishnan G, Huang SH, Khoshakhlagh A, Jallipalli A, Rotella P, Amtout A, Krishna S, Haines CP, Dawson LR, Huffaker DL. Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate Electronics Letters. 42: 350-352. DOI: 10.1049/El:20064286  0.508
2006 Mi Z, Yang J, Bhattacharya P, Huffaker DL. Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon Electronics Letters. 42: 121-123. DOI: 10.1049/El:20063582  0.515
2006 Timm R, Lenz A, Eisele H, Ivanova L, Pötschke K, Pohl UW, Bimberg D, Balakrishnan G, Huffaker DL, Dähne M. Onset of GaSb/GaAs quantum dot formation Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 3971-3974. DOI: 10.1002/Pssc.200671605  0.479
2006 Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang S, Hains CP, Lester LF, Huffaker DL. Low threshold current operation of stacked InAs/GaAs quantum dot lasers with GaP strain-compensation layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 108-111.  0.405
2006 Tatebayashi J, Balakrishnan G, Huang SH, Khoshakhlagh A, Mehta M, Dawson LR, Huffaker DL. Optical properties of Stranski-Krastanow and strain-free GaSb quantum dots on GaAs substrates - Towards Sb-based type-II quantum dot emitters 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 1: 119-122.  0.381
2005 Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL. High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1010-1012. DOI: 10.1116/1.1924424  0.406
2005 Unlu MS, Huffaker D, Baba T, Huyet G. Introduction to the Issue on Optoelectronic Materials and Processing and Nanostructures Ieee Journal of Selected Topics in Quantum Electronics. 11: 1245-1247. DOI: 10.1109/Jstqe.2005.860988  0.323
2005 Nuntawong N, Huang S, Jiang YB, Hains CP, Huffaker DL. Defect dissolution in strain-compensated stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition Applied Physics Letters. 87. DOI: 10.1063/1.2042638  0.504
2005 Nuntawong N, Birudavolu S, Hains CP, Huang S, Xin YC, Huffaker DL. Effect of InGaP strain-compensation layers in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by MOCVD Aip Conference Proceedings. 772: 603-604. DOI: 10.1063/1.1994251  0.349
2005 Nuntawong N, Xin YC, Birudavolu S, Wong PS, Huang S, Hains CP, Huffaker DL. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1926413  0.473
2005 Balakrishnan G, Huang S, Dawson LR, Xin YC, Conlin P, Huffaker DL. Growth mechanisms of highly mismatched AlSb on a Si substrate Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1850611  0.352
2005 Balakrishnan G, Huang SH, Khoshakhlagh A, Hill P, Amtout A, Krishna S, Donati GP, Dawson LR, Huffaker DL. Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate Electronics Letters. 41: 531-532. DOI: 10.1049/el:20050564  0.388
2004 Balakrishnan G, Huang S, Dawson LR, Huffaker DL. Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1529-1533. DOI: 10.1116/1.1755710  0.372
2004 Osborne S, Blood P, Smowton P, Lutti J, Xin YC, Stintz A, Huffaker D, Lester LF. State filling in InAs quantum-dot laser structures Ieee Journal of Quantum Electronics. 40: 1639-1645. DOI: 10.1109/Jqe.2004.837331  0.401
2004 Osborne SW, Blood P, Smowton PM, Xin YC, Stintz A, Huffaker D, Lester LF. Optical absorption cross section of quantum dots Journal of Physics: Condensed Matter. 16: S3749-S3756. DOI: 10.1088/0953-8984/16/35/016  0.346
2004 Nuntawong N, Birudavolu S, Hains CP, Huang S, Xu H, Huffaker DL. Effect of strain-compensation in stacked 1.3 μm InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition Applied Physics Letters. 85: 3050-3052. DOI: 10.1063/1.1805707  0.409
2004 Birudavolu S, Nuntawong N, Balakrishnan G, Xin YC, Huang S, Lee SC, Brueck SRJ, Hains CP, Huffaker DL. Selective area growth of InAs quantum dots formed on a patterned GaAs substrate Applied Physics Letters. 85: 2337-2339. DOI: 10.1063/1.1792792  0.451
2004 Balakrishnan G, Huang S, Rotter TJ, Stintz A, Dawson LR, Malloy KJ, Xu H, Huffaker DL. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer Applied Physics Letters. 84: 2058-2060. DOI: 10.1063/1.1669067  0.484
2004 Chow WW, Huffaker DL. Dephasing effects on laser gain in shallow and deep semiconductor quantum dots Conference Digest - Ieee International Semiconductor Laser Conference. 91-92.  0.446
2004 Birudavolu S, Luong SQ, Hains CP, Huffaker DL. Patterned InAs quantum dot formation Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 69.  0.377
2003 Balakrishnan G, Birudavolu S, Dawson LR, Huffaker DL, Xu H, Jiang Y. 1.6 μm emission from InAs quantum dots grown on a GaAs substrate using an AlGaAsSb metamorphic buffer Materials Research Society Symposium - Proceedings. 737: 19-24. DOI: 10.1557/Proc-737-E2.4  0.451
2003 Huffaker DL, Balakrishnan G, Huang S, Dawson LR, Hains CP. Crystallographic anisotropy in InAs quantum dashes on GaAs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 698-699. DOI: 10.1364/Fio.2003.Thz1  0.453
2003 Huffaker DL, Birudavolu S, Wong PS, Huang S, El-Emawy AA. MOCVD-Grown InAs/GaAs Quantum Dots Proceedings of Spie - the International Society For Optical Engineering. 4999: 478-485. DOI: 10.1117/12.488041  0.375
2003 Xin YC, Vaughn LG, Dawson LR, Stintz A, Lin Y, Lester LF, Huffaker DL. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135. DOI: 10.1063/1.1582229  0.519
2003 El-Emawy AA, Birudavolu S, Wong PS, Jiang YB, Xu H, Huang S, Huffaker DL. Formation trends in quantum dot growth using metalorganic chemical vapor deposition Journal of Applied Physics. 93: 3529-3534. DOI: 10.1063/1.1543647  0.488
2003 El-Emawy AA, Birudavolu S, Huang S, Xu H, Huffaker DL. Selective surface migration for defect-free quantum dot ensembles using metal organic chemical vapor deposition Journal of Crystal Growth. 255: 213-219. DOI: 10.1016/S0022-0248(03)01186-2  0.435
2001 Brick P, Ell C, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Johnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in a semiconductor microcavity Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 232. DOI: 10.1109/QELS.2001.962146  0.577
2001 Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications Journal of Lightwave Technology. 19: 546-552. DOI: 10.1109/50.920853  0.546
2001 Yoshie T, Scherer A, Chen H, Huffaker D, Deppe D. Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters Applied Physics Letters. 79: 114-116. DOI: 10.1063/1.1377851  0.618
2001 Boggess TF, Zhang L, Deppe DG, Huffaker DL, Cao C. Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots Applied Physics Letters. 78: 276-278. DOI: 10.1063/1.1337638  0.64
2001 Lee ES, Ell C, Brick P, Spiegelberg C, Gibbs HM, Khitrova G, Deppe DG, Huffaker DL. Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities Journal of Applied Physics. 89: 807-809. DOI: 10.1063/1.1330758  0.549
2000 Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities. Physical Review Letters. 85: 5392-5. PMID 11136004 DOI: 10.1103/Physrevlett.85.5392  0.613
2000 Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe D. Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors Ieee Photonics Technology Letters. 12: 1683-1685. DOI: 10.1109/68.896348  0.518
2000 Shchekin OB, Park G, Huffaker DL, Mo Q, Deppe DG. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122. DOI: 10.1109/68.874208  0.833
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232. DOI: 10.1109/68.826897  0.815
2000 Huffaker DL, Park G, Zhengzhong Z, Shchekin OB, Deppe DG. Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 452-461. DOI: 10.1109/2944.865100  0.797
2000 Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities Physical Review Letters. 85: 5392-5395. DOI: 10.1103/PhysRevLett.85.5392  0.58
2000 Deppe DG, Huffaker DL. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers Applied Physics Letters. 77: 3325-3327. DOI: 10.1063/1.1328090  0.602
2000 Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. DOI: 10.1063/1.127012  0.808
2000 Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224. DOI: 10.1063/1.125991  0.774
2000 Qasaimeh O, Zhou WD, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode Electronics Letters. 36: 1955-1957. DOI: 10.1049/El:20001352  0.608
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature Electronics Letters. 36: 1283-1284. DOI: 10.1049/El:20000909  0.782
1999 Deppe DG, Huffaker DL, Graham LA, Zou Z, Csutak S. Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters Mrs Proceedings. 573. DOI: 10.1557/Proc-573-81  0.679
1999 Park G, Huffaker DL, Zou Z, Shchekin OB, Deppe DG. Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303. DOI: 10.1109/68.748215  0.818
1999 Deppe DG, Graham LA, Huffaker DL. Enhanced spontaneous emission using quantum dots and an apertured microcavity Ieee Journal of Quantum Electronics. 35: 1502-1508. DOI: 10.1109/3.792581  0.62
1999 Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226  0.82
1999 Huffaker D, Deppe D. A quantum leap in laser emission Ieee Circuits and Devices Magazine. 15: 8-13. DOI: 10.1109/101.768521  0.626
1999 Krishna S, Zhu D, Xu J, Linder KK, Qasaimeh O, Bhattacharya P, Huffaker DL. Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm Journal of Applied Physics. 86: 6135-6138. DOI: 10.1063/1.371664  0.507
1999 Graham LA, Huffaker DL, Csutak SM, Deng Q, Deppe DG. Spontaneous lifetime control of quantum dot emitters in apertured microcavities Journal of Applied Physics. 85: 3383-3385. DOI: 10.1063/1.369688  0.618
1999 Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. DOI: 10.1063/1.125320  0.808
1999 Zou Z, Huffaker DL, Csutak S, Deppe DG. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser Applied Physics Letters. 75: 22-24. DOI: 10.1063/1.124264  0.678
1999 Graham LA, Huffaker DL, Deppe DG. Spontaneous lifetime control in a native-oxide-apertured microcavity Applied Physics Letters. 74: 2408-2410. DOI: 10.1063/1.123863  0.598
1999 Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. DOI: 10.1007/S11664-999-0107-X  0.8
1998 Deppe DG, Huffaker DL. Quantum Well and Quantum Dot Light Emitters Confined in Oxide-Semiconductor Microcavities Optics and Photonics News. 9: 30. DOI: 10.1364/Opn.9.1.000030  0.655
1998 DEPPE DG, HUFFAKER DL. EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS International Journal of High Speed Electronics and Systems. 9: 979-1005. DOI: 10.1142/S0129156498000403  0.654
1998 Huffaker DL, Schaub JD, Deng H, Deppe DG. Quantum dot active regions for extended wavelength range GaAs-based light emitting devices Proceedings of Spie - the International Society For Optical Engineering. 3283: 144-151. DOI: 10.1117/12.316678  0.68
1998 Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260  0.494
1998 Zou Z, Shchekin OB, Park G, Huffaker DL, Deppe DG. Threshold temperature dependence of lateral-cavity quantum-dot lasers Ieee Photonics Technology Letters. 10: 1673-1675. DOI: 10.1109/68.730465  0.816
1998 Deppe DG, Kudari A, Huffaker DL, Deng H, Deng Q, Campbell JC. Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector Ieee Photonics Technology Letters. 10: 252-254. DOI: 10.1109/68.655375  0.653
1998 Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Cavity-induced antiguiding in a selectively oxidized vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 10: 12-14. DOI: 10.1109/68.651084  0.572
1998 Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766  0.814
1998 Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. 73: 2564-2566. DOI: 10.1063/1.122534  0.813
1998 Huffaker DL, Deppe DG. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 73: 520-522. DOI: 10.1063/1.121920  0.67
1998 Huffaker DL, Deppe DG. Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials Applied Physics Letters. 73: 366-368. DOI: 10.1063/1.121836  0.558
1998 Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Guiding and antiguiding effects in epitaxially regrown vertical-cavity surface-emitting lasers Applied Physics Letters. 72: 2782-2784. DOI: 10.1063/1.121458  0.615
1998 Graham LA, Huffaker DL, Deng Q, Deppe DG. Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots Applied Physics Letters. 72: 1670-1672. DOI: 10.1063/1.121148  0.653
1998 Huffaker DL, Graham LA, Deppe DG. Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots Applied Physics Letters. 72: 214-216. DOI: 10.1063/1.120689  0.612
1997 Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors Ieee Photonics Technology Letters. 9: 866-868. DOI: 10.1109/68.593326  0.634
1997 Deppe DG, Huffaker DL, Oh T, Deng H, Deng Q. Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors Ieee Journal of Selected Topics in Quantum Electronics. 3: 893-904. DOI: 10.1109/2944.640643  0.601
1997 Baklenov O, Huffaker DL, Anselm A, Deppe DG, Streetman BG. Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy Journal of Applied Physics. 82: 6362-6364. DOI: 10.1063/1.366530  0.607
1997 Huffaker DL, Deppe DG. Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active region Applied Physics Letters. 71: 1449-1451. DOI: 10.1063/1.119933  0.523
1997 Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region Applied Physics Letters. 71: 25-27. DOI: 10.1063/1.119459  0.638
1997 Huffaker DL, Baklenov O, Graham LA, Streetman BG, Deppe DG. Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture Applied Physics Letters. 70: 2356-2358. DOI: 10.1063/1.118872  0.685
1997 Huffaker DL, Deppe DG. Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors Applied Physics Letters. 70: 1781-1783. DOI: 10.1063/1.118689  0.531
1997 Graham LA, Deng Q, Deppe DG, Huffaker DL. Exciton spectral splitting near room temperature from high contrast semiconductor microcavities Applied Physics Letters. 70: 814-816. DOI: 10.1063/1.118231  0.646
1997 McDaniel M, Huffaker D, Deppe D. Hybrid dielectric/metal reflector for low threshold vertical-cavity surface-emitting lasers Electronics Letters. 33: 1704. DOI: 10.1049/El:19971157  0.584
1997 Campbell J, Huffaker D, Deng H, Deppe D. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength Electronics Letters. 33: 1337. DOI: 10.1049/El:19970906  0.664
1997 Deppe D, Huffaker D. High spatial coherence vertical-cavity surface-emitting laser using a long monolithic cavity Electronics Letters. 33: 211. DOI: 10.1049/El:19970129  0.589
1996 Huffaker DL, Graham LA, Deng H, Deppe DG. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors Ieee Photonics Technology Letters. 8: 974-976. DOI: 10.1109/68.508708  0.613
1996 Huffaker DL, Graham LA, Deppe DG. Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation Ieee Photonics Technology Letters. 8: 596-598. DOI: 10.1109/68.491550  0.595
1996 Huffaker DL, Deng H, Deng Q, Deppe DG. Ring and stripe oxide‐confined vertical‐cavity surface‐emitting lasers Applied Physics Letters. 69: 3477-3479. DOI: 10.1063/1.117257  0.469
1996 Oh T, Huffaker D, Graham L, Deng H, Deppe D. Steam oxidation of GaAs Electronics Letters. 32: 2024. DOI: 10.1049/El:19961315  0.523
1995 Rogers TJ, Huffaker DL, Deng H, Deng Q, Deppe DG. Influence of Cavity Tuning on the Transverse Mode in Vertical-Cavity Lasers Ieee Photonics Technology Letters. 7: 238-240. DOI: 10.1109/68.372732  0.577
1995 Deng H, Lin CC, Huffaker DL, Deng Q, Deppe DG, Rogers TJ. Temperature dependence of the transverse lasing mode in vertical-cavity lasers Journal of Applied Physics. 77: 2279-2286. DOI: 10.1063/1.358816  0.599
1995 Huffaker DL, Deppe DG. Spontaneous coupling to planar and index‐confined quasimodes of Fabry–Pérot microcavities Applied Physics Letters. 67: 2594-2596. DOI: 10.1063/1.115142  0.392
1994 Hansing CC, Deng H, Huffaker DL, Deppe DG, Streetman BG, Sarathy J. Low-threshold continuous-wave surface emitting lasers with etched void confinement Ieee Photonics Technology Letters. 6: 320-322. DOI: 10.1109/68.275477  0.593
1994 Huffaker DL, Lin CC, Deppe DG, Streetman BG, Rogers TJ. Mode Dependence on Mirror Contrast in Fabry-Perot Microcavity Lasers Ieee Photonics Technology Letters. 6: 135-138. DOI: 10.1109/68.275408  0.564
1994 Deppe D, Lei C, Lin C, Huffaker D. Spontaneous Emission from Planar Microstructures Journal of Modern Optics. 41: 325-344. DOI: 10.1080/09500349414550361  0.565
1994 Huffaker DL, Deppe DG, Kumar K, Rogers TJ. Native-oxide defined ring contact for low threshold vertical-cavity lasers Applied Physics Letters. 65: 97-99. DOI: 10.1063/1.113087  0.582
1994 Huffaker DL, Deppe DG, Rogers TJ. Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers Applied Physics Letters. 65: 1611-1613. DOI: 10.1063/1.112927  0.572
1994 Huffaker DL, Shin J, Deng H, Lin CC, Deppe DG, Streetman BG. Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers Applied Physics Letters. 65: 2642-2644. DOI: 10.1063/1.112589  0.662
1994 Huffaker D, Deppe D, Shin J. Low threshold half-wave vertical-cavity lasers Electronics Letters. 30: 1946-1947. DOI: 10.1049/El:19941348  0.629
1993 Deppe DG, Huffaker DL, Lei C. Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers Proceedings of Spie. 1851: 128-137. DOI: 10.1117/12.147592  0.598
1993 Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984  0.564
1992 Huffaker DL, Huang Z, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Effect on spontaneous emission of quantum well placement in a short vertical cavity Applied Physics Letters. 61: 877-879. DOI: 10.1063/1.107775  0.65
1992 Deppe DG, Huffaker DL, Rogers TJ, Lei C, Huang Z, Streetman BG. First-order phase transition in a laser threshold Applied Physics Letters. 60: 3081-3083. DOI: 10.1063/1.106758  0.559
1992 Huffaker DL, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Controlled spontaneous emission in room-temperature semiconductor microcavities Applied Physics Letters. 60: 3203-3205. DOI: 10.1063/1.106739  0.61
1992 Huffaker D, Deppe D, Lei C, Rogers T, Streetman B, Smith S, Burnham R. Cascadability of optically latching vertical-cavity surface-emitting laser Electronics Letters. 28: 734. DOI: 10.1049/El:19920465  0.598
1991 Huffaker DL, Lee WD, Deppe DG, Lei C, Rogers TJ, Campbell JC, Streetman BG. Optical memory using a vertical-cavity surface emitting laser Ieee Photonics Technology Letters. 3: 1064-1066. DOI: 10.1109/68.118001  0.567
Low-probability matches (unlikely to be authored by this person)
2018 Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH, David JPR. Demonstration of large ionization coefficient ratio in AlAsSb lattice matched to InP. Scientific Reports. 8: 9107. PMID 29904062 DOI: 10.1038/S41598-018-27507-W  0.299
2011 Reyner CJ, Wang J, Nunna K, Lin A, Liang B, Goorsky MS, Huffaker DL. Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction Applied Physics Letters. 99. DOI: 10.1063/1.3666234  0.297
2017 Scofield AC, Hudson AI, Liang BL, Juang BC, Huffaker DL, Lotshaw WT. Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics Proceedings of Spie. 10193. DOI: 10.1117/12.2262807  0.297
2011 Senanayake PN, Hung CH, Shapiro J, Lin A, Huffaker DL. Surface plasmon enhanced nanopillar photodetector array Ieee Photonic Society 24th Annual Meeting, Pho 2011. 809-810. DOI: 10.1109/Pho.2011.6110804  0.296
2016 Juang BC, Prout DL, Liang B, Chatziioannou AF, Huffaker DL. Characterization of GaSb photodiode for gamma-ray detection Applied Physics Express. 9. DOI: 10.7567/Apex.9.086401  0.295
2018 Gong Y, Oh SS, Huffaker DL, Copner N. Novel mid-infrared metamaterial thermal emitters for optical gas sensing Frontiers in Optics. DOI: 10.1364/Fio.2018.Jtu3A.89  0.294
2013 Lin A, Shapiro JN, Scofield AC, Liang BL, Huffaker DL. Enhanced InAs nanopillar electrical transport by in-situ passivation Applied Physics Letters. 102. DOI: 10.1063/1.4791592  0.292
2012 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Room temperature continuous wave lasing in nanopillar photonic crystal cavities 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.283
2014 Nelson CA, Luo J, Jen AKY, Laghumavarapu RB, Huffaker DL, Zhu XY. Time-, energy-, and phase-resolved second-harmonic generation at semiconductor interfaces Journal of Physical Chemistry C. 118: 27981-27988. DOI: 10.1021/Jp5094614  0.28
2014 Liu W, Liang B, Huffaker D, Fetterman H. Anisotropic electro-optic effect on InGaAs quantum dot chain modulators. Optics Letters. 38: 4262-4. PMID 24321975 DOI: 10.1364/OL.38.004262  0.28
2016 Kim H, Farrell AC, Senanayake P, Lee WJ, Huffaker DL. Correction to Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links. Nano Letters. PMID 27030998 DOI: 10.1021/Acs.Nanolett.6B00913  0.279
2009 Liang BL, Wong PS, Tatebayashi J, Huffaker DL. Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 75-76. DOI: 10.1109/ICIPRM.2009.5012425  0.272
2012 Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR, Huffaker DL. Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 8541. DOI: 10.1117/12.974765  0.272
2015 Grynko DO, Fedoryak AN, Dimitriev OP, Lin A, Laghumavarapu RB, Huffaker DL, Kratzer M, Piryatinski YP. Template-assisted synthesis of CdS nanocrystal arrays in chemically inhomogeneous pores using a vapor-solid mechanism Rsc Advances. 5: 27496-27501. DOI: 10.1039/C5Ra01175B  0.268
2013 Grynko DA, Fedoryak AN, Dimitriev OP, Lin A, Laghumavarapu RB, Huffaker DL. Growth of CdS nanowire crystals: Vapor-liquid-solid versus vapor-solid mechanisms Surface and Coatings Technology. 230: 234-238. DOI: 10.1016/J.Surfcoat.2013.06.058  0.256
2011 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2011.6086643  0.255
2007 Sharma YD, Bishop G, Kim HS, Rodriguez JB, Plis E, Balakrishnan G, Dawson LR, Huffaker DL, Krishna S. Type II strain layer superlattices (SLS's) grown on GaAs substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 96-97. DOI: 10.1109/LEOS.2007.4382293  0.255
2011 Scofield AC, Shapiro JN, Lin A, Williams AD, Wong PS, Liang BL, Huffaker DL. Bottom-up photonic crystal cavities formed by III-V nanopillar arrays Optics Infobase Conference Papers.  0.245
2005 Birudavolu S, Luong SQ, Nuntawong N, Xin YC, Hains CP, Huffaker DL. In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition Journal of Crystal Growth. 277: 97-103. DOI: 10.1016/j.jcrysgro.2005.01.066  0.228
2009 Jallipalli A, Balakrishnan G, Huang SH, Rotter TJ, Nunna K, Liang BL, Dawson LR, Huffaker DL. Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90° misfit dislocations Nanoscale Research Letters. 4: 1458-1462. DOI: 10.1007/s11671-009-9420-9  0.218
2007 Huffaker DL, Balakrishnan G, Mehta M, Kutty MN, Rotella P, Krishna S, Dawson LR. Monolithically integrated III-Sb superluminescent light emitting diodes on Si (100) substrates Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452988  0.212
2005 Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Lester L, Huffaker DL. Monolithic integration of Sb-based photopumped lasers on Si Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 674. DOI: 10.1109/LEOS.2005.1548185  0.209
2021 Kim H, Bae H, Chang TY, Huffaker DL. III-V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber. Scientific Reports. 11: 13813. PMID 34226651 DOI: 10.1038/s41598-021-93398-z  0.207
2012 Huffaker DL, Nunna K. Interfacial misfit dislocation arrays Lattice Engineering: Technology and Applications. 1-62. DOI: 10.4032/9789814364256  0.206
2023 Alshahrani D, Kesaria M, Jiménez JJ, Kwan D, Srivastava V, Delmas M, Morales FM, Liang B, Huffaker D. Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices. Acs Applied Materials & Interfaces. PMID 36724387 DOI: 10.1021/acsami.2c19292  0.201
2012 Scofield AC, Kim SH, Shapiro JN, Lin A, Liang BL, Scherer A, Huffaker DL. Room temperature continuous wave lasing in nanopillar photonic crystal cavities 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.2
2011 Steenbergen EH, Huang Y, Ryou JH, Dupuis RD, Nunna K, Huffaker DL, Zhang YH. Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices Aip Conference Proceedings. 1416: 122-125. DOI: 10.1063/1.3671713  0.2
2006 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Modeling misfit dislocation arrays for the growth of low-defect density AlSb on Si Materials Research Society Symposium Proceedings. 934: 26-31.  0.194
2014 Farrell AC, Senanayake P, Hung CH, Currie M, Huffaker DL. Reflection spectromicroscopy for the design of nanopillar optical antenna detectors Device Research Conference - Conference Digest, Drc. 175-176. DOI: 10.1109/DRC.2014.6872354  0.185
2015 Huffaker DL, Eisele H. Front Matter: Volume 9373 Proceedings of Spie. 937301. DOI: 10.1117/12.2190559  0.18
2013 Eyink KG, Huffaker DL, Szmulowicz F. Front Matter: Volume 8634 Proceedings of Spie. 863401. DOI: 10.1117/12.2022939  0.18
2012 Eyink KG, Szmulowicz F, Huffaker DL. Front Matter: Volume 8271 Proceedings of Spie. 827101. DOI: 10.1117/12.931595  0.18
2011 Eyink KG, Szmulowicz F, Huffaker DL. Front Matter: Volume 7947 Proceedings of Spie. 794701. DOI: 10.1117/12.891726  0.18
2023 Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH, David JPR. Very low excess noise AlGaAsSb avalanche photodiode. Optics Express. 31: 33141-33149. PMID 37859101 DOI: 10.1364/OE.500169  0.165
2009 Huang S, Balakrishnan G, Huffaker DL. Characterization of interfacial misfit array formation for GaSb growth on gaas by transmission electron microscopy Microscopy and Microanalysis. 15: 1062-1063. DOI: 10.1017/S1431927609096469  0.156
2010 Nong H, Gicquel M, Bramerie L, Grillot F, Perrin M, Liang BL, Huffaker DL, Loualiche S. High-bit-rate pump-probe experiments on bundled single-walled carbon nanotubes for 1.55μm telecom signal regeneration Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.153
2016 Juang BC, Prout DL, Liang B, Chatziioannou AF, Huffaker DL. GaSb-based photon counting gamma-ray detectors Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548504  0.152
2010 Nong H, Gicquel M, Bramerie L, Grillot F, Perrin M, Folliot H, Liang BL, Huffaker DL, Loualiche S. High-bit-rate pump-probe experiments on bundled single- walled carbon nanotubes for 1.55μ telecom signal regeneration Optics Infobase Conference Papers.  0.143
2010 Huang S, Balakrishnan G, Huffaker D. TEM Characterization of GaSb Growth on GaAs (001) Substrate: Growth Mode and Defect Evaluation Microscopy and Microanalysis. 16: 1516-1517. DOI: 10.1017/S1431927610053663  0.139
2019 Zutter BT, Kim H, Hubbard WA, Ren D, Lodico JJ, Chang T, Huffaker D, Regan B. Inducing Electrically-Active Defects in a Gallium Arsenide Nanowire with an Electron Beam Microscopy and Microanalysis. 25: 1618-1619. DOI: 10.1017/S1431927619008821  0.089
2013 Krishna S, Plis E, Bhattacharya P, Huffaker D. Compound Semiconductors Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 719-725. DOI: 10.1002/pssc.201360163  0.074
2014 Scofield AC, Lin A, Haddad M, Huffaker DL. Axial diffusion barriers in near-infrared nanopillar LEDs Nano Letters. 14: 6037-6041. DOI: 10.1021/nl501022v  0.068
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627  0.061
2014 El-Howayek G, Milner BM, Senanayake P, Huffaker DL, Hayat MM. Analytical model for impact ionization in 3D multiplication regions 2014 Ieee Photonics Conference, Ipc 2014. 168-169. DOI: 10.1109/IPCon.2014.6995301  0.043
2003 Huffaker D, Pontius RG. Reconstruction of historical land cover in the Ipswich watershed. The Biological Bulletin. 203: 253-4. PMID 12414607 DOI: 10.2307/1543426  0.01
Hide low-probability matches.